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    • 81. 发明授权
    • Semiconductor imaging device
    • 半导体成像装置
    • US4857981A
    • 1989-08-15
    • US060545
    • 1987-06-11
    • Kazuya MatsumotoTsutomu Nakamura
    • Kazuya MatsumotoTsutomu Nakamura
    • H01L27/148H01L27/146H04N5/335H04N5/355H04N5/365H04N5/369H04N5/3745
    • H01L27/14643
    • A semiconductor imaging device includes lateral MOS static induction transistors including: a semiconductor layer formed on an insulating substrate or a high-resistance semiconductor substrate; and picture elements arranged in the form of a matrix over the surface of the semiconductor layer, the picture elements respectively constituted by lateral MOS static induction transistors each having a source region and a drain region both of which serve as main electrodes and a gate region for storing therein a photoelectric signal. Isolating regions are formed between the respective picture elements vertically or laterally on the matrix so that the picture elements which are adjacent to each other vertically or laterally share their source and drain regions with each other. Accordingly, each of the gate regions constitutes in combination with the adjacent source or drain region an equivalent unit picture element, thereby improving the density of picture-element formation.
    • 一种半导体成像装置,包括横向MOS静电感应晶体管,包括:形成在绝缘基板或高电阻半导体基板上的半导体层; 以及在半导体层的表面上以矩阵的形式布置的图像元素,分别由侧向MOS静电感应晶体管构成的像素分别具有用作主电极的源极区域和漏极区域,以及栅极区域 存储光电信号。 在矩阵上垂直或横向地形成各个像素之间的隔离区域,使得彼此相邻的像素彼此垂直或横向共享它们的源极和漏极区域。 因此,每个栅极区域与相邻的源极或漏极区域组合构成等效单位像素,从而提高了图像元素形成的密度。
    • 83. 发明授权
    • Crosslinkable copolymer composition and a method for the preparation
thereof
    • 可交联共聚物组合物及其制备方法
    • US4722975A
    • 1988-02-02
    • US800433
    • 1985-11-21
    • Kunio ItohYasuo TarumiTsutomu NakamuraHiroyuki OhataTsutomu MatsuoHarukazu Okuda
    • Kunio ItohYasuo TarumiTsutomu NakamuraHiroyuki OhataTsutomu MatsuoHarukazu Okuda
    • C08F8/42
    • C08F8/42
    • The inventive copolymer composition is satisfactorily curable or vulcanizable into, for example, a rubbery elastomer even by an organic peroxide contained therein as a crosslinking agent. The crosslinkable copolymer comprised therein is a polymer having, in a molecule, at least two monomeric units each having a vinyl-containing organosilicon pendant group represented by the general formula (Vi.sub.m R.sup.1.sub.n SiO).sub.a Vi.sub.b R.sup.2.sub.c Si--, in which Vi is a vinyl group, R.sup.1 is a hydrogen atom or a group selected from the class consisting of monovalent hydrocarbon groups free from aliphatic unsaturation, hydroxy group and hydrolyzable groups excepting halogen atoms, R.sup.2 is a hydrogen atom or a monovalent hydrocarbon group, m is 1, 2 or 3, n is zero, 1 or 2, a is 1, 2 or 3, b is zero, 1 or 2 and c is zero, 1 or 2 with the proviso that a+b=1, 2 or 3 and a+b+c=3. Such a copolymer can be prepared by the copolymerization of a first ordinary ethylenically unsaturated monomer and a second monomer having, simultaneously in a molecule, an ethylenically unsaturated linkage copolymerizable with the first monomer and the vinyl-containing organosilicon group of the above given formula.
    • 本发明的共聚物组合物甚至可以通过其中含有的有机过氧化物作为交联剂令人满意地固化或硫化成例如橡胶弹性体。 包含在其中的可交联共聚物是分子中具有至少两个单体单元的聚合物,每个单体单元具有由通式(VimR1nSiO)aVibR2cSi-表示的含乙烯基的有机硅侧基,其中Vi是乙烯基,R1是 氢原子或选自不含脂肪族不饱和键的一价烃基,羟基和除卤素原子外的可水解基团的基团,R 2为氢原子或一价烃基,m为1,2或3,n为0 ,1或2,a为1,2或3,b为0,1或2,c为0,1或2,条件是a + b = 1,2或3,a + b + c = 3。 这种共聚物可以通过共聚第一普通烯键式不饱和单体和第二单体来制备,该单体在分子中同时具有可与上述给定式的第一单体和含乙烯基的有机硅基团共聚的烯属不饱和键。
    • 84. 发明授权
    • Solid state image sensor having means to reset and clear static
induction transistor photoelements
    • 具有复位和清除静态感应晶体管光电元件的装置的固态图像传感器
    • US4684992A
    • 1987-08-04
    • US799136
    • 1985-11-18
    • Tsutomu NakamuraKazuya Matsumoto
    • Tsutomu NakamuraKazuya Matsumoto
    • H01L27/146H04N5/335H04N5/357H04N5/369H04N3/14
    • H01L27/14679
    • A solid state image sensor including a number of lateral type static induction transistors arranged in a matrix, sources of all transistors being commonly connected to ground potential, gates of transistors arranged in each row being commonly connected to respective row lines and drains of transistors arranged in each column commonly connected to respective column lines, a vertical scanning circuit connected to the row lines, a plurality of column selection transistors each connected between respective column lines and a video output line, and a horizontal scanning circuit connected to gates of the column selection transistors. After one row has been read out, photocarriers stored in transistors belonging to the relevant row are simultaneously discharged by means of a reset signal supplied from the vertical scanning circuit. Then any excessive amounts of photocarriers stored in the transistors are discharged away by means of clear signals supplied from the vertical scanning circuit every time transistors belonging to another row are reset.
    • 一种固态图像传感器,包括以矩阵形式布置的多个横向型静电感应晶体管,所有晶体管的源极共同连接到地电位,每行排列的晶体管的栅极共同连接到排列在 通常连接到各列列的每列,连接到行线的垂直扫描电路,各自连接在各列列和视频输出线之间的多个列选择晶体管,以及连接到列选择晶体管的栅极的水平扫描电路 。 在读出一行之后,存储在属于相关行的晶体管中的光载流子通过从垂直扫描电路提供的复位信号同时放电。 然后,每当晶体管属于另一行的晶体管复位时,通过从垂直扫描电路提供的清除信号将存储在晶体管中的任何过量的光载流子排出。