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    • 81. 发明授权
    • Thin film transistor substrate for liquid crystal display panel and manufacturing method thereof
    • US07092047B2
    • 2006-08-15
    • US10814955
    • 2004-03-31
    • Jin Jeon
    • Jin Jeon
    • G02F1/136
    • G02F1/13454
    • In an LCD panel substrate and a manufacturing method thereof, a gate pattern includes a gate line formed on a pixel region and a peripheral region of a transparent insulating substrate and a gate electrode branched from the gate line. A gate insulating film is formed on the substrate having the gate pattern. An active pattern is formed on the gate insulating film and including a first impurity region, a second impurity region, and a channel region therebetween. A data pattern is formed on the active pattern and the gate insulating film. The data pattern includes a first electrode, a second electrode, and a data line. A first insulating interlayer is formed on the data pattern and the gate insulating film. The first insulating interlayer includes a first contact hole for partially exposing the first electrode, a second contact hole for exposing the gate electrode of a first drive transistor of the peripheral region and a third contact hole for exposing the first/second electrode of a second drive transistor of the peripheral region. An electrode pattern part is formed on the first insulating interlayer. The electrode pattern part includes a first electrode pattern coupled to the first electrode of the pixel region through the first contact hole, and a second electrode pattern connecting the partially exposed gate electrode of the first drive transistor with the exposed first/second electrode of the second drive transistor through the second and third contact holes.