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    • 88. 发明授权
    • Two stage etching of silicon nitride to form a nitride spacer
    • 二级氮化硅蚀刻以形成氮化物间隔物
    • US06846730B2
    • 2005-01-25
    • US10800190
    • 2004-03-12
    • Barbara A. HaseldenJohn Lee
    • Barbara A. HaseldenJohn Lee
    • H01L21/311H01L21/336H01L21/3205
    • H01L29/6656H01L21/31116H01L29/6659
    • A method of etching nitride over oxide is provided for the formation of vertical profile nitride spacers with high uniformity while maintaining the integrity of underlying thin oxide layers. The method includes providing a first gas flow including a first fluorocarbon and a second fluorocarbon at a first ratio, applying a first quantity of power to the first gas flow to create a first plasma, etching a first portion of a silicon nitride layer with the first plasma, providing a second gas flow including the first fluorocarbon and the second fluorocarbon at a second ratio greater than the first ratio, applying a second quantity of power to the second gas flow to create a second plasma, and etching a second portion of the silicon nitride layer with the second plasma.
    • 提供了一种在氧化物上蚀刻氮化物的方法,用于形成具有高均匀性的垂直型氮化物间隔物,同时保持下面的薄氧化物层的完整性。 该方法包括以第一比例提供包括第一碳氟化合物和第二碳氟化合物的第一气流,向第一气流施加第一量的功率以产生第一等离子体,用第一气体蚀刻氮化硅层的第一部分 等离子体,以大于第一比例的第二比率提供包括第一碳氟化合物和第二碳氟化合物的第二气流,向第二气流施加第二量的功率以产生第二等离子体,以及蚀刻硅的第二部分 具有第二等离子体的氮化物层。
    • 89. 发明授权
    • Method of preventing junction leakage in field emission displays
    • 防止场致发射显示器的结漏的方法
    • US06398608B1
    • 2002-06-04
    • US09723012
    • 2000-11-27
    • David A. Cathey, Jr.John Lee
    • David A. Cathey, Jr.John Lee
    • H01J924
    • H01J9/025H01J29/04H01J29/06H01J29/89H01J31/127H01J2201/319
    • A method for fabricating a field emission display (FED) with improved junction leakage characteristics is provided. The method includes the formation of a light blocking element between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED. The light blocking element protects the junctions from light formed at the display screen and light generated in the environment striking the junctions. Electrical characteristics of the junctions thus remain constant and junction leakage is improved. The light blocking element may be formed as an opaque light absorbing or light reflecting layer. In addition, the light blocking element may be patterned to protect predetermined areas of the baseplate and may provide other circuit functions such as an interconnect layer.
    • 提供了一种制造具有改善的结漏电特性的场发射显示(FED)的方法。 该方法包括在FED的阴极发光显示屏和形成在FED的底板上的半导体结之间形成遮光元件。 光阻挡元件保护接点免受在显示屏上形成的光和在环境中产生的光的撞击。 因此,结的电气特性保持恒定,并且提高结漏电。 遮光元件可以形成为不透明的光吸收或光反射层。 此外,遮光元件可以被图案化以保护基板的预定区域并且可以提供诸如互连层的其它电路功能。