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81. 发明授权

US06797132B2 Apparatus for plating and polishing a semiconductor workpiece 失效
标题翻译：用于电镀和抛光半导体工件的装置
公开(公告)号：US06797132B2
公开(公告)日：2004-09-28
申请号：US09941360
申请日：2001-08-28
申请人： Homayoun Talieh , Cyprian Emeka Uzoh
发明人： Homayoun Talieh , Cyprian Emeka Uzoh
IPC分类号： C25D1700
CPC分类号： B24B37/16 , C25D5/06 , C25D5/22 , C25D7/123 , C25D17/001 , C25D17/14 , C25F7/00 , H01L21/3212
摘要： The present invention provides a method and apparatus that plates/deposits a conductive material on a semiconductor substrate and then polishes the same substrate. This is achieved by providing multiple chambers in a single apparatus, where one chamber can be used for plating/depositing the conductive material and another chamber can be used for polishing the semiconductor substrate. The plating/depositing process can be performed using brush plating or electro chemical mechanical deposition and the polishing process can be performed using electropolishing or chemical mechanical polishing. The present invention further provides a method and apparatus for intermittently applying the conductive material to the semiconductor substrate and also intermittently polishing the substrate when such conductive material is not being applied to the substrate. Furthermore, the present invention provides a method and apparatus that plates/deposits and/or polishes a conductive material and improves the electrolyte mass transfer properties on a substrate using a novel anode assembly.
摘要翻译：本发明提供一种在半导体衬底上沉积/沉积导电材料然后抛光相同衬底的方法和装置。这通过在单个设备中提供多个室来实现，其中一个室可以用于电镀/沉积导电材料，并且另一个室可以用于抛光半导体衬底。电镀/沉积工艺可以使用刷镀或电化学机械沉积进行，并且可以使用电抛光或化学机械抛光进行抛光工艺。本发明还提供了一种用于将导电材料间歇地施加到半导体衬底的方法和装置，并且当这种导电材料未被施加到衬底时也间歇地抛光衬底。此外，本发明提供了一种使用新型阳极组件对导电材料进行平板/沉积和/或抛光并改善基板上的电解质传质性质的方法和装置。

82. 发明授权

US06398625B1 Apparatus and method of polishing with slurry delivery through a polishing pad 有权
标题翻译：用浆料通过抛光垫进行抛光的设备和方法
公开(公告)号：US06398625B1
公开(公告)日：2002-06-04
申请号：US09724639
申请日：2000-11-28
申请人： Homayoun Talieh
发明人： Homayoun Talieh
IPC分类号： B24B100
CPC分类号： B24B41/068 , B24B21/004 , B24B21/06 , B24B37/107 , B24B37/26 , B24B37/30
摘要： A chemical mechanical polishing apparatus includes a rotating plate on which a substrate is received, and a polishing pad which moves across the substrate as it rotates on the plate to polish the substrate. The load of the pad against the substrate, and the rotary speed of the plate, may be varied to control the rate of material removed by the pad.
摘要翻译：化学机械抛光装置包括：旋转板，接收基板;旋转板，抛光垫，当其在板上旋转时移动到基板上以抛光基板。可以改变衬垫抵靠衬底的负载和板的旋转速度，以控制衬垫移除的材料的速率。

83. 发明授权

US06328872B1 Method and apparatus for plating and polishing a semiconductor substrate 有权
标题翻译：电镀和抛光半导体衬底的方法和装置
公开(公告)号：US06328872B1
公开(公告)日：2001-12-11
申请号：US09285621
申请日：1999-04-03
申请人： Homayoun Talieh , Cyprian Emeka Uzoh
发明人： Homayoun Talieh , Cyprian Emeka Uzoh
IPC分类号： C25D1700
CPC分类号： B24B37/16 , C25D5/06 , C25D5/22 , C25D7/123 , C25D17/001 , C25D17/14 , C25F7/00 , H01L21/3212
摘要： The present invention provides a method and apparatus that plates/deposits a conductive material on a semiconductor substrate and then polishes the same substrate. This is achieved by providing multiple chambers in a single apparatus, where one chamber can be used for plating/depositing the conductive material and another chamber can be used for polishing the semiconductor substrate. The plating/depositing process can be performed using brush plating or electro chemical mechanical deposition and the polishing process can be performed using electropolishing or chemical mechanical polishing. The present invention further provides a method and apparatus for intermittently applying the conductive material to the semiconductor substrate and also intermittently polishing the substrate when such conductive material is not being applied to the substrate. Furthermore, the present invention provides a method and apparatus that plates/deposits and/or polishes a conductive material and improves the electrolyte mass transfer properties on a substrate using a novel anode assembly.
摘要翻译：本发明提供一种在半导体衬底上沉积/沉积导电材料然后抛光相同衬底的方法和装置。这通过在单个设备中提供多个室来实现，其中一个室可以用于电镀/沉积导电材料，并且另一个室可以用于抛光半导体衬底。电镀/沉积工艺可以使用刷镀或电化学机械沉积进行，并且可以使用电抛光或化学机械抛光进行抛光工艺。本发明还提供了一种用于将导电材料间歇地施加到半导体衬底的方法和装置，并且当这种导电材料未被施加到衬底时也间歇地抛光衬底。此外，本发明提供了一种使用新型阳极组件对导电材料进行平板/沉积和/或抛光并改善基板上的电解质传质性质的方法和装置。

84. 发明授权

US06176992B1 Method and apparatus for electro-chemical mechanical deposition 有权
标题翻译：电化学机械沉积的方法和装置
公开(公告)号：US06176992B1
公开(公告)日：2001-01-23
申请号：US09201929
申请日：1998-12-01
申请人： Homayoun Talieh
发明人： Homayoun Talieh
IPC分类号： C25D500
CPC分类号： B24B37/26 , B23H5/08 , C25D5/02 , C25D5/06 , C25D5/22 , H01L21/2885 , H01L21/3212
摘要： The present invention deposits a conductive material from an electrolyte solution to a predetermined area of a wafer. The steps that are used when making this application include applying the conductive material to the predetermined area of the wafer using an electrolyte solution disposed on a surface of the wafer, when the wafer is disposed between a cathode and an anode, and preventing accumulation of the conductive material to areas other than the predetermine area by mechanically polishing the other areas while the conductive material is being applied.
摘要翻译：本发明将导电材料从电解质溶液沉积到晶片的预定区域。在进行该应用时使用的步骤包括：当晶片设置在阴极和阳极之间时，使用设置在晶片表面上的电解质溶液将导电材料施加到晶片的预定区域，并且防止导电材料通过在施加导电材料的同时机械抛光其它区域而不是预定区域的区域。

85. 发明授权

US5944582A Chemical mechanical polishing with a small polishing pad 失效
公开(公告)号：US5944582A
公开(公告)日：1999-08-31
申请号：US814570
申请日：1997-03-10
申请人： Homayoun Talieh
发明人： Homayoun Talieh
IPC分类号： B24B1/00 , B24B7/22 , B24B21/00 , B24B21/04 , B24B21/06 , B24B27/00 , B24B37/04 , B24B41/047 , B24B41/06 , B24B49/10 , B24B49/16 , B24B53/007
CPC分类号： B24B49/16 , B24B21/004 , B24B21/06 , B24B37/04 , B24B37/20 , B24B37/26 , B24B37/30 , B24B41/068 , B24B49/10 , B24B53/017
摘要： A chemical mechanical polishing apparatus includes a rotating plate on which a substrate is received, and a polishing pad which moves across the substrate as it rotates on the plate to polish the substrate. The load of the pad against the substrate, and the rotary speed of the plate, may be varied to control the rate of material removed by the pad.

86. 发明授权

US07378004B2 Pad designs and structures for a versatile materials processing apparatus 有权
标题翻译：垫片设计和结构，用于多功能材料加工设备
公开(公告)号：US07378004B2
公开(公告)日：2008-05-27
申请号：US10152793
申请日：2002-05-23
申请人： Cyprian Uzoh , Bulent Basol , Homayoun Talieh
发明人： Cyprian Uzoh , Bulent Basol , Homayoun Talieh
IPC分类号： B24D11/00 , C25D5/22 , C25F3/00 , H01L21/3063
CPC分类号： B24B37/26 , B23H5/08 , C25D17/001 , C25D17/14
摘要： An apparatus capable of assisting in controlling an electrolyte flow and an electric field distribution used for processing a substrate is provided. It includes a rigid member having a top surface of a predetermined shape and a bottom surface. The rigid member contains a plurality of channels, each forming a passage from the top surface to the bottom surface, and each allowing the electrolyte and electric field flow therethrough. A pad is attached to the rigid member via a fastener. The pad also allows for electrolyte and electric field flow therethrough to the substrate.
摘要翻译：提供一种能够辅助控制用于处理基板的电解质流动和电场分布的装置。它包括具有预定形状的顶表面和底表面的刚性构件。刚性构件包括多个通道，每个通道形成从顶表面到底表面的通道，并且每个通道允许电解质和电场流过其中。垫通过紧固件附接到刚性构件。衬垫还允许电解质和电场流过衬底。

87. 发明授权

US07309407B2 Method and apparatus for forming an electrical contact with a semiconductor substrate 有权
标题翻译：用于形成与半导体衬底的电接触的方法和装置
公开(公告)号：US07309407B2
公开(公告)日：2007-12-18
申请号：US11259694
申请日：2005-10-25
申请人： Homayoun Talieh , Bulent Basol
发明人： Homayoun Talieh , Bulent Basol
IPC分类号： C25D17/06 , C25D7/12 , C25F3/00
CPC分类号： H01L21/6715 , C25D17/001 , H01L21/2885 , H01L21/67075
摘要： The present invention is directed to a method and apparatus for plating a surface of a semiconductor workpiece (wafer, flat panel, magnetic films, etc.) using a liquid conductor that makes contact with the outer surface of the workpiece. The liquid conductor is stored in a reservoir and pump through an inlet channel to the liquid chamber. The liquid conductor is injected into a liquid chamber such that the liquid conductor makes contact with the outer surface of the workpiece. An inflatable tube is also provided to prevent the liquid conductor from reaching the back face of the workpiece. A plating solution can be applied to the front face of the workpiece where a retaining ring/seal further prevents the plating solution and the liquid conductor from making contact with each other. In an alternative embodiment, electrical contacts may be formed using an inflatable tube that has either been coated with a conductive material or contains a conductive object. The inflatable tube further provides uniform contact and pressure along the periphery of the workpiece, which may not necessarily be perfectly flat, because the tube can conform according to the shape of the periphery of the workpiece. Further, the present invention can be used to dissolve/etch a metal layer from the periphery of the workpiece.
摘要翻译：本发明涉及一种使用与工件的外表面接触的液体导体对半导体工件的表面（晶片，平板，磁性膜等）进行电镀的方法和装置。液体导体储存在储存器中并通过入口通道泵送到液体室。液体导体被注入到液体室中，使得液体导体与工件的外表面接触。还设有可充气管以防止液体导体到达工件的背面。可以将电镀液施加到工件的前表面，其中保持环/密封件进一步防止电镀溶液和液体导体彼此接触。在替代实施例中，可以使用已经涂覆有导电材料或包含导电物体的可充气管来形成电接触。可膨胀管还可以沿着工件的周边提供均匀的接触和压力，这可能不一定是完全平坦的，因为管可以根据工件的周边的形状来适应。此外，本发明可用于从工件的周边溶解/蚀刻金属层。

88. 发明授权

US07309406B2 Method and apparatus for plating and polishing semiconductor substrate 有权
标题翻译：电镀和抛光半导体衬底的方法和装置
公开(公告)号：US07309406B2
公开(公告)日：2007-12-18
申请号：US10946703
申请日：2004-09-21
申请人： Homayoun Talieh , Cyprian Emeka Uzoh
发明人： Homayoun Talieh , Cyprian Emeka Uzoh
IPC分类号： C25F3/30
CPC分类号： B24B37/16 , C25D5/06 , C25D5/22 , C25D7/123 , C25D17/001 , C25D17/14 , C25F7/00 , H01L21/3212
摘要： The present invention provides a method and apparatus that plates/deposits a conductive material on a semiconductor substrate and then polishes the same substrate. This is achieved by providing multiple chambers in a single apparatus, where one chamber can be used for plating/depositing the conductive material and another chamber can be used for polishing the semiconductor substrate. The plating/depositing process can be performed using brush plating or electro chemical mechanical deposition and the polishing process can be performed using electropolishing or chemical mechanical polishing. The present invention further provides a method and apparatus for intermittently applying the conductive material to the semiconductor substrate and also intermittently polishing the substrate when such conductive material is not being applied to the substrate. Furthermore, the present invention provides a method and apparatus that plates/deposits and/or polishes a conductive material and improves the electrolyte mass transfer properties on a substrate using a novel anode assembly.
摘要翻译：本发明提供一种在半导体衬底上沉积/沉积导电材料然后抛光相同衬底的方法和装置。这通过在单个设备中提供多个室来实现，其中一个室可以用于电镀/沉积导电材料，并且另一个室可以用于抛光半导体衬底。电镀/沉积工艺可以使用刷镀或电化学机械沉积进行，并且可以使用电抛光或化学机械抛光进行抛光工艺。本发明还提供了一种用于将导电材料间歇地施加到半导体衬底的方法和装置，并且当这种导电材料未被施加到衬底时也间歇地抛光衬底。此外，本发明提供了一种使用新型阳极组件对导电材料进行平板/沉积和/或抛光并改善基板上的电解质传质性质的方法和装置。

89. 发明申请

US20070128851A1 FABRICATION OF SEMICONDUCTOR INTERCONNECT STRUCTURES 审中-公开
标题翻译：半导体互连结构的制造
公开(公告)号：US20070128851A1
公开(公告)日：2007-06-07
申请号：US11672005
申请日：2007-02-06
申请人： Bulent Basol , Homayoun Talieh
发明人： Bulent Basol , Homayoun Talieh
IPC分类号： B24B1/00 , H01L21/4763 , H01L21/461
CPC分类号： C25D5/06 , B24B37/042 , B24B37/046 , B24B49/16 , C25D5/22 , C25D7/123 , C25D17/001 , H01L21/67173 , H01L21/67207 , H01L21/67219 , H01L21/6723 , H01L21/7684
摘要： A system and a method of forming copper interconnect structures in a surface of a wafer is provided. The method includes a step of performing a planar electroplating process in an electrochemical mechanical deposition station for filling copper material into a plurality of cavities formed in the surface of the wafer. The electroplating continues until a planar layer of copper with a predetermined thickness is formed on the surface of the wafer. In a following chemical mechanical polishing step the planar layer is removed until the copper remains in the cavities, insulated from one another by exposed regions of the dielectric layer.
摘要翻译：提供了一种在晶片表面形成铜互连结构的系统和方法。该方法包括在电化学机械沉积站中进行平面电镀处理以将铜材料填充到形成在晶片表面中的多个空腔中的步骤。电镀继续进行，直到在晶片的表面上形成具有预定厚度的平坦的铜层。在随后的化学机械抛光步骤中，去除平面层，直到铜保留在空腔中，通过介电层的暴露区域彼此绝缘。

90. 发明申请

US20060118425A1 Process to minimize and/or eliminate conductive material coating over the top surface of a patterned substrate 审中-公开
标题翻译：在图案化衬底的顶表面上最小化和/或消除导电材料涂层的工艺
公开(公告)号：US20060118425A1
公开(公告)日：2006-06-08
申请号：US11343477
申请日：2006-01-30
申请人： Bulent Basol , Cyprian Uzoh , Homayoun Talieh
发明人： Bulent Basol , Cyprian Uzoh , Homayoun Talieh
IPC分类号： C25D5/02
CPC分类号： C25D5/022 , C25D5/18 , C25D5/22 , C25D7/123 , H01L21/2885 , H01L21/32125 , H01L21/7684 , H01L21/76877
摘要： A layer structure usable in manufacturing an integrated circuit is made, in a single apparatus, by a particular process in which a patterned substrate is provided. An electrolyte solution, out of which a conductive material can be plated under an applied potential, is supplied over a surface of the patterned substrate, and a potential is applied so as to deposit a film of the conductive material out of the electrolyte solution and over the surface of the patterned substrate. The film of conductive material is preferably polished as it is deposited. The conductive material is then removed from field regions of the patterned substrate, while deposits of the conductive material are left in features defined in the patterned substrate. The deposits of the conductive material are then electrically isolated, resulting in the layer structure.
摘要翻译：在单一设备中，通过提供图案化衬底的特定工艺制造可用于制造集成电路的层结构。在图案化衬底的表面上提供电解质溶液，其中可以在施加电位下电镀导电材料，并且施加电位以将导电材料的膜从电解质溶液中沉积出来并且越过图案化衬底的表面。导电材料的膜优选在其沉积时被抛光。导电材料然后从图案化衬底的场区域移除，而导电材料的沉积物留在图案化衬底中限定的特征中。然后导电材料的沉积物被电隔离，导致层结构。

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