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    • 86. 发明授权
    • Display panel
    • 显示面板
    • US09589994B2
    • 2017-03-07
    • US14610085
    • 2015-01-30
    • Innolux Corporation
    • Kuan-Feng LeeMing-Chang LinTzu-Min Yan
    • H01L27/12H01L27/32
    • H01L27/3258G02F1/1368H01L27/1225H01L27/124H01L27/1248H01L27/3248H01L27/3262H01L29/24H01L29/7869H01L2251/301H01L2251/303
    • A display panel whose TFT substrate comprises a substrate, a gate layer, a gate dielectric layer, a semiconductor layer, a first electrode layer, a first passivation layer, a second passivation layer, a via and a second electrode layer is provided. The gate layer is disposed on the substrate. The gate dielectric layer is disposed on the gate layer. The semiconductor layer is disposed on the gate dielectric layer. The first electrode layer is disposed on the semiconductor layer. The first and second passivation layers are sequentially disposed on the first electrode layer. The via penetrates the passivation layers to expose the first electrode layer. The second electrode layer is electrically connected to the first electrode layer through the via. The first and second passivation layers have first and second taper angles respectively. The difference between the first and second taper angles is below 30°.
    • 提供了TFT基板包括基板,栅极层,栅极介电层,半导体层,第一电极层,第一钝化层,第二钝化层,通孔和第二电极层的显示面板。 栅极层设置在基板上。 栅极电介质层设置在栅极层上。 半导体层设置在栅介质层上。 第一电极层设置在半导体层上。 第一和第二钝化层依次设置在第一电极层上。 通孔穿透钝化层以露出第一电极层。 第二电极层通过通孔与第一电极层电连接。 第一和第二钝化层分别具有第一和第二锥角。 第一和第二锥角之间的差值低于30°。
    • 88. 发明授权
    • Manufacturing method of thin film transistor substrate
    • 薄膜晶体管衬底的制造方法
    • US09343582B2
    • 2016-05-17
    • US14675973
    • 2015-04-01
    • INNOCOM TECHNOLOGY(SHENZHEN) CO., LTD.InnoLux Corporation
    • Kuan-Feng Lee
    • H01L31/20H01L29/04H01L29/786H01L29/66H01L21/027
    • H01L29/66742H01L21/0274H01L21/0334H01L29/66765H01L29/66969H01L29/786H01L29/7869
    • An embodiment of the invention provides a manufacturing method of a thin film transistor substrate including: sequentially forming a gate electrode, a gate insulating layer covering the gate electrode, an active material layer, and a photo-sensitive material layer on a first substrate; performing a photolithography process by using a half tone mask to form a photo-sensitive protective layer which is above the gate electrode and has a first recess and a second recess; etching the active material layer by using the photo-sensitive protective layer as a mask to form an active layer; removing a portion of the photo-sensitive protective layer at bottoms of the first recess and the second recess to expose a first portion and a second portion of the active layer respectively; forming a first electrode connecting to the first portion; and forming a second electrode connecting to the second portion.
    • 本发明的一个实施例提供一种薄膜晶体管衬底的制造方法,包括:在第一衬底上依次形成栅电极,覆盖栅电极的栅极绝缘层,活性材料层和光敏材料层; 通过使用半色调掩模进行光刻处理,以形成位于栅电极之上并具有第一凹部和第二凹部的感光保护层; 通过使用光敏保护层作为掩模蚀刻活性物质层以形成活性层; 在所述第一凹部和所述第二凹部的底部移除所述光敏保护层的一部分,以分别暴露所述活性层的第一部分和第二部分; 形成连接到所述第一部分的第一电极; 以及形成连接到所述第二部分的第二电极。