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    • 81. 发明授权
    • Unit pixel of image sensor and photo detector thereof
    • 图像传感器的单位像素及其光电检测器
    • US08669599B2
    • 2014-03-11
    • US14036046
    • 2013-09-25
    • Hoon Kim
    • Hoon Kim
    • H01L27/148H01L21/00
    • H01L27/14605H01L27/14612H01L27/14616H01L27/14643
    • A unit pixel of an image sensor and a photo detector are disclosed. The photo detector of the present invention configured to absorb light can include: a light-absorbing part configured to absorb light by being formed in a floated structure; an oxide film being in contact with one surface of the light-absorbing part; a source being in contact with one side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; a drain facing the source so as to be in contact with the other side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; and a channel interposed between the source and the drain and configured to form flow of an electric current between the source and the drain.
    • 公开了图像传感器和光电检测器的单位像素。 被配置为吸收光的本发明的光检测器可以包括:被配置为通过以漂浮结构形成来吸收光的光吸收部; 氧化膜与所述光吸收部的一个表面接触; 源极与氧化膜的另一个表面的一侧接触并且与光吸收部分分离,其间具有氧化物膜; 漏极,面对源极,以与氧化膜的另一表面的另一侧接触,并与其间的氧化膜与光吸收部分分离; 以及介于源极和漏极之间并被配置为在源极和漏极之间形成电流的通道的通道。
    • 85. 发明授权
    • Organic light emitting diode display having getter and method of manufacturing the same
    • 具有吸气剂的有机发光二极管显示器及其制造方法
    • US08569749B2
    • 2013-10-29
    • US13083380
    • 2011-04-08
    • Hoon Kim
    • Hoon Kim
    • H01L27/32
    • H01L51/5246H01L51/5259
    • An organic light emitting diode (OLED) display is disclosed. In one embodiment, the OLED display includes first and second substrates, an OLED interposed between the first and second substrates and an external sealant formed between the first and second substrates and configured to i) substantially seal the first and second substrates and ii) substantially surround the OLED. The OLED display may further include a dam formed between the external sealant and the OLED and configured to substantially surround the OLED, and a getter formed between the external sealant and the dam.
    • 公开了一种有机发光二极管(OLED)显示器。 在一个实施例中,OLED显示器包括第一和第二基板,置于第一和第二基板之间的OLED和形成在第一和第二基板之间的外部密封件,并且被配置为i)基本上密封第一和第二基板,以及ii) OLED。 OLED显示器还可以包括形成在外部密封剂和OLED之间并被配置为基本上围绕OLED的坝,以及形成在外部密封剂和坝之间的吸气剂。
    • 86. 发明申请
    • INTEGRATED CIRCUITS HAVING IMPROVED METAL GATE STRUCTURES AND METHODS FOR FABRICATING SAME
    • 具有改进的金属结构结构的集成电路及其制造方法
    • US20130270646A1
    • 2013-10-17
    • US13445719
    • 2012-04-12
    • Hoon KimKisik Choi
    • Hoon KimKisik Choi
    • H01L27/092H01L21/283
    • H01L29/66545H01L21/823842H01L29/4966
    • Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes forming a PFET trench in a PFET region and an NFET trench in an NFET region of an interlayer dielectric material on a semiconductor surface. The NFET trench is partially filled with an N-type work function metal layer to define an inner cavity. The PFET trench and the inner cavity in the NFET trench are partially filled with a P-type work function metal layer to define a central void in each trench. In the method, the central voids are filled with a metal fill to form metal gate structures. A single recessing process is then performed to recess portions of each metal gate structure within each trench to form a recess in each trench above the respective metal gate structure.
    • 提供了用于制造集成电路的集成电路和方法。 在一个实施例中,制造集成电路的方法包括在半导体表面上的层间绝缘材料的NFET区域中的PFET区域中形成PFET沟槽和NFET沟槽。 NFET沟槽部分地填充有N型功函数金属层以限定内腔。 NFET沟槽中的PFET沟槽和内腔部分地填充有P型功函数金属层,以在每个沟槽中限定中心空隙。 在该方法中,中心空隙填充有金属填充物以形成金属栅极结构。 然后执行单个凹陷处理以在每个沟槽内凹入每个金属栅极结构的部分,以在相应的金属栅极结构上方的每个沟槽中形成凹陷。
    • 88. 发明申请
    • UNIT PIXEL OF IMAGE SENSOR AND PHOTO DETECTOR THEREOF
    • 图像传感器及其检测器的单元像素
    • US20130056708A1
    • 2013-03-07
    • US13224921
    • 2011-09-02
    • Hoon Kim
    • Hoon Kim
    • H01L27/30
    • H01L27/14605H01L27/14612H01L27/14616H01L27/14643
    • A unit pixel of an image sensor and a photo detector are disclosed. The photo detector of the present invention configured to absorb light can include: a light-absorbing part configured to absorb light by being formed in a floated structure; an oxide film being in contact with one surface of the light-absorbing part; a source being in contact with one side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; a drain facing the source so as to be in contact with the other side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; and a channel interposed between the source and the drain and configured to form flow of an electric current between the source and the drain.
    • 公开了图像传感器和光电检测器的单位像素。 被配置为吸收光的本发明的光检测器可以包括:被配置为通过以漂浮结构形成来吸收光的光吸收部; 氧化膜与所述光吸收部的一个表面接触; 源极与氧化膜的另一个表面的一侧接触并且与光吸收部分分离,其间具有氧化物膜; 漏极,面对源极,以与氧化膜的另一表面的另一侧接触,并与其间的氧化膜与光吸收部分分离; 以及介于源极和漏极之间并被配置为在源极和漏极之间形成电流的通道的通道。
    • 90. 发明申请
    • ORGANIC LIGHT EMITTING DIODE DISPLAY
    • 有机发光二极管显示
    • US20120326603A1
    • 2012-12-27
    • US13346422
    • 2012-01-09
    • Hoon Kim
    • Hoon Kim
    • H01J1/70
    • H01L51/5259H01L27/3223H01L27/3246H01L51/5246
    • An OLED display includes a pixel substrate including a pixel area at which an organic light emitting member is located, and a peripheral area surrounding the pixel area, a pixel protective layer located in the pixel area, a peripheral protective layer separated from the pixel protective layer and located in the peripheral area, a sealing substrate opposite to the pixel substrate, a moisture absorbent between the pixel substrate and the sealing substrate, and on and overlapping the peripheral protective layer, and a sealing member between the pixel substrate and the sealing substrate, and located at an outer side of the moisture absorbent.
    • OLED显示器包括:像素基板,包括有机发光部件所在的像素区域和围绕像素区域的周边区域;位于像素区域的像素保护层;与像素保护层分离的外围保护层 并且位于周边区域中,与像素基板相对的密封基板,像素基板和密封基板之间的吸湿材料,并且与外围保护层重叠,以及像素基板和密封基板之间的密封构件, 并且位于吸湿剂的外侧。