专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明授权

US07514747B2 Silicon-on-insulator semiconductor device 失效
标题翻译：绝缘体上半导体器件
公开(公告)号：US07514747B2
公开(公告)日：2009-04-07
申请号：US11798988
申请日：2007-05-18
申请人： Koichi Fukuda
发明人： Koichi Fukuda
IPC分类号： H01L23/62
CPC分类号： H01L29/78612 , H01L29/66772 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device formed in a silicon-on-insulator substrate includes a silicon channel region located between silicon source and drain regions, and a low-carrier-concentration layer that underlies the channel region. The low-carrier-concentration layer makes contact with both the channel region and the source region. The channel region and the low-carrier-concentration layer are of the same conductive type, but the low-carrier-concentration layer is doped to have a lower carrier concentration than the channel region. The low-carrier-concentration layer eliminates the floating substrate effect, because carriers that would otherwise accumulate in the channel region can escape through the low-carrier-concentration layer into the source region.
摘要翻译：形成在绝缘体上硅衬底中的半导体器件包括位于硅源极和漏极区之间的硅沟道区，以及位于沟道区之下的低载流子浓度层。低载流子浓度层与沟道区域和源极区域接触。沟道区域和低载流子浓度层具有相同的导电类型，但是低载流子浓度层被掺杂以具有比沟道区域更低的载流子浓度。低载流子浓度层消除浮置衬底效应，因为否则在沟道区积聚的载流子可以通过低载流子浓度层逸出到源区。

82. 发明申请

US20090033852A1 Liquid Crystal Display Device 有权
标题翻译：液晶显示装置
公开(公告)号：US20090033852A1
公开(公告)日：2009-02-05
申请号：US12184270
申请日：2008-08-01
申请人： Koichi Fukuda , Tetsuya Oshima , Satoru Kawasaki , Tsutomu Sato , Kouji Hayakawa
发明人： Koichi Fukuda , Tetsuya Oshima , Satoru Kawasaki , Tsutomu Sato , Kouji Hayakawa
IPC分类号： G02F1/1333
CPC分类号： G02F1/133528 , G02F2202/28
摘要： A liquid crystal display device includes: a first substrate; a second substrate which is placed nearer to a viewer than the first substrate, and which faces a viewer side of the first substrate; a liquid crystal sandwiched between the first substrate and the second substrate; an upper polarization plate which is placed nearer to the viewer than the second substrate, and which faces a viewer side of the second substrate; and a transparent resin plate which is placed nearer to the viewer than the upper polarization plate, and which is attached to a viewer side of the upper polarization plate with one of an adhesive material and a bonding material, the transparent resin plate includes a transparent oxide film on a face that faces the upper polarization plate, and the transparent resin plate is in close contact with the adhesive material or the bonding material through the transparent oxide film.
摘要翻译：液晶显示装置包括：第一基板; 第二基板，其放置得比第一基板更靠近观察者，并且面向第一基板的观察者侧; 夹在第一基板和第二基板之间的液晶; 位于与第二基板相比更靠近观察者并且面向第二基板的观察者侧的上偏振板; 以及透明树脂板，其被放置成比上偏振板更靠近观察者，并且用粘合材料和接合材料之一附着到上偏振板的观察者侧，透明树脂板包括透明树脂板面对上偏振板的面上的薄膜，透明树脂板通过透明氧化膜与粘合剂材料或接合材料紧密接触。

83. 发明授权

US07420853B2 Semiconductor storage device and semiconductor storage device driving method 有权
标题翻译：半导体存储装置及半导体存储装置的驱动方法
公开(公告)号：US07420853B2
公开(公告)日：2008-09-02
申请号：US11836907
申请日：2007-08-10
申请人： Koichi Fukuda
发明人： Koichi Fukuda
IPC分类号： G11C11/34
CPC分类号： G11C16/30 , G11C16/16
摘要： A semiconductor storage device comprises a semiconductor layer; a plurality of memory cells formed on the semiconductor layer, data writing, erasing or reading with respect to each of the memory cells being possible based on a voltage applied to a control electrode and a voltage applied to the semiconductor layer; a first booster circuit supplying a voltage to control electrodes of selected memory cells into which data is to be written; and a second booster circuit supplying a voltage to control electrodes of inhibited memory cells into which data is not to be written, wherein when erasing data in the memory cells, a potential at the semiconductor layer is boosted in a first boosting mode in which a boosting capability of the first booster circuit is low and a boosting capability of the second booster circuit is high, and then the potential at the semiconductor layer is boosted in a second boosting mode in which the boosting capability of the second booster circuit is low and the boosting capability of the first booster circuit is high.
摘要翻译：半导体存储装置包括半导体层; 基于施加到控制电极的电压和施加到半导体层的电压，形成在半导体层上的多个存储单元，相对于每个存储单元的数据写入，擦除或读取是可能的; 向要写入数据的所选存储单元的控制电极提供电压的第一升压电路; 以及第二升压电路，向要写入数据的禁止存储单元的控制电极提供电压，其中当擦除存储单元中的数据时，在第一升压模式中升压半导体层的电位，其中升压第一升压电路的能力低，第二升压电路的升压能力高，然后在第二升压电路的升压能力低的升压模式下升压半导体层的电位，并且升压第一升压电路的能力很高。

84. 发明授权

US07269074B2 Semiconductor storage device and semiconductor storage device driving method 有权
标题翻译：半导体存储装置及半导体存储装置的驱动方法
公开(公告)号：US07269074B2
公开(公告)日：2007-09-11
申请号：US11368484
申请日：2006-03-07
申请人： Koichi Fukuda
发明人： Koichi Fukuda
IPC分类号： G11C11/34
CPC分类号： G11C16/30 , G11C16/16
摘要： A semiconductor storage device comprises a semiconductor layer; a plurality of memory cells formed on the semiconductor layer, data writing, erasing or reading with respect to each of the memory cells being possible based on a voltage applied to a control electrode and a voltage applied to the semiconductor layer; a first booster circuit supplying a voltage to control electrodes of selected memory cells into which data is to be written; and a second booster circuit supplying a voltage to control electrodes of inhibited memory cells into which data is not to be written, wherein when erasing data in the memory cells, a potential at the semiconductor layer is boosted in a first boosting mode in which a boosting capability of the first booster circuit is low and a boosting capability of the second booster circuit is high, and then the potential at the semiconductor layer is boosted in a second boosting mode in which the boosting capability of the second booster circuit is low and the boosting capability of the first booster circuit is high.
摘要翻译：半导体存储装置包括半导体层; 基于施加到控制电极的电压和施加到半导体层的电压，形成在半导体层上的多个存储单元，相对于每个存储单元的数据写入，擦除或读取是可能的; 向要写入数据的所选存储单元的控制电极提供电压的第一升压电路; 以及第二升压电路，向要写入数据的禁止存储单元的控制电极提供电压，其中当擦除存储单元中的数据时，在第一升压模式中升压半导体层的电位，其中升压第一升压电路的能力低，第二升压电路的升压能力高，然后在第二升压电路的升压能力低的升压模式下升压半导体层的电位，并且升压第一升压电路的能力很高。

85. 发明授权

US07224608B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07224608B2
公开(公告)日：2007-05-29
申请号：US11246164
申请日：2005-10-11
申请人： Koichi Fukuda
发明人： Koichi Fukuda
IPC分类号： G11C16/04
CPC分类号： G11C16/0491 , G11C16/0483
摘要： A semiconductor device includes an electrical circuit formed on a substrate; a level detector outputting a first level signal which has a signal level based on power supply voltage and which determines an operation of the electrical circuit; a command decoder decoding a command that is inputted from the outside, and outputting a command signal; a control circuit to which the command signal is inputted, the control circuit outputting a state signal expressing whether the electrical circuit is in an operation state; and a first latch circuit to which the first level signal and the state signal are inputted, the first latch circuit latching the first level signal at a time based on the state signal.
摘要翻译：半导体器件包括形成在衬底上的电路; 电平检测器输出基于电源电压具有信号电平的第一电平信号，并且确定电路的操作; 解码从外部输入的命令并输出命令信号的命令解码器; 输入指令信号的控制电路，所述控制电路输出表示所述电路是否处于工作状态的状态信号; 以及第一锁存电路，第一电平信号和状态信号被输入到其中，第一锁存电路基于状态信号一次锁存第一电平信号。

86. 发明授权

US07199000B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07199000B2
公开(公告)日：2007-04-03
申请号：US10875683
申请日：2004-06-25
申请人： Koichi Fukuda
发明人： Koichi Fukuda
IPC分类号： H01L21/8238
CPC分类号： H01L21/84 , H01L27/1203
摘要： Several a transistor, which are inhibited short channel effect moderately according to each transistor's channel length, are formed on a same SOI substrate.In the present invention, forming a first transistor on SOI substrate, and forming a second transistor which has a gate electrode whose length is longer than a gate length of the first transistor in a channel directionThe impurities are doped from above a surface of the SOI substrate in an oblique direction against the surface, and from source side and drain side of the first transistor and the second transistor.By this means, a pocket layer is formed under an insulator layer of a SOI substrate.
摘要翻译：根据每个晶体管的沟道长度抑制短沟道效应的几个晶体管形成在同一SOI衬底上。

87. 发明申请

US20070069641A1 DISPLAY DEVICE 失效
标题翻译：显示设备
公开(公告)号：US20070069641A1
公开(公告)日：2007-03-29
申请号：US11534334
申请日：2006-09-22
申请人： TOSHINORI HASEGAWA , Hiroshi Matsuda , Masahiro Okuda , Masataka Yashima , Koichi Fukuda , Nobutaka Mizuno
发明人： TOSHINORI HASEGAWA , Hiroshi Matsuda , Masahiro Okuda , Masataka Yashima , Koichi Fukuda , Nobutaka Mizuno
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： C09K11/06 , C09K2211/1011 , C09K2211/1014 , C09K2211/1037 , C09K2211/1088 , C09K2211/186 , H01L51/5281 , H05B33/14
摘要： There is provided a display device which quenches ambient light by using only an optical interference effect without additionally using an optical filter such as a color filter, and can provide good visibility out of doors in the daylight. The display device includes a plurality of organic EL elements each having a light extraction electrode, a reflective electrode, and a plurality of organic compound layers disposed between the electrodes, wherein the plurality of organic EL elements include at least organic EL elements which emit a red light, a green light, and a blue light, respectively; a layer comprised of a material having anomalous dispersion is disposed at a location which is on a light extraction side with respect to the reflective electrode in each of the plurality of organic EL elements; and an ambient light reflectance of the display device shows a minimal in a region of 535 nm or more and 575 nm or less.
摘要翻译：提供了一种显示装置，其通过仅使用光学干涉效应来淬灭环境光，而不需要额外使用诸如滤色器的滤光器，并且可以在日光下提供良好的门外视野。显示装置包括多个有机EL元件，每个有机EL元件具有设置在电极之间的光引出电极，反射电极和多个有机化合物层，其中多个有机EL元件至少包括发射红色的有机EL元件光，绿光和蓝光; 由具有异常色散的材料构成的层设置在相对于多个有机EL元件的每一个中的反射电极的光提取侧的位置; 并且显示装置的环境光反射率在535nm以上且575nm以下的区域中显示最小。

88. 发明申请

US20060138543A1 Silicon-on-sapphire semiconductor device with shallow lightly-doped drain 有权
标题翻译：具有浅掺杂漏极的蓝宝石半导体器件
公开(公告)号：US20060138543A1
公开(公告)日：2006-06-29
申请号：US11288273
申请日：2005-11-29
申请人： Koichi Fukuda
发明人： Koichi Fukuda
IPC分类号： H01L27/12
CPC分类号： H01L29/78657 , H01L29/78612 , H01L29/78621
摘要： A semiconductor device is created in a doped silicon layer at most one-tenth of a micrometer thick formed on and having an interface with a sapphire substrate. An oppositely doped source region is formed in the silicon layer. A gate electrode is formed above part of the silicon layer. A diffusion layer doped with the same type of impurity as the source region but at a lower concentration is formed in the silicon layer, extending into a first area beneath the gate electrode, functioning as a drain region or as a lightly-doped extension of a more heavily doped drain region. The depth of this diffusion layer is less than the thickness of the silicon layer. This comparatively shallow diffusion depth reduces current leakage by inhibiting the formation of a back channel.
摘要翻译：半导体器件产生在形成于蓝宝石衬底上并具有与蓝宝石衬底的界面的至多十分之一微米厚的掺杂硅层中。在硅层中形成相反掺杂的源极区。栅电极形成在硅层的一部分的上方。在硅层中形成掺杂有与源极区相同类型杂质但浓度较低的扩散层，延伸到栅电极下方的第一区域中，用作漏极区域或作为漏极区域的轻掺杂延伸层更重掺杂的漏极区。该扩散层的深度小于硅层的厚度。这种比较浅的扩散深度通过抑制反向通道的形成来减少电流泄漏。

89. 发明授权

US06970218B2 Semi-transmissive LCD device including an optical film having negative uniaxial double refractive index ellipsoids 有权
$Semi-transmissive LCD device including an optical film having negative uniaxial double refractive index ellipsoids$
标题翻译：半透射型LCD装置，包括具有负单轴双重折射率椭圆体的光学膜
公开(公告)号：US06970218B2
公开(公告)日：2005-11-29
申请号：US10777166
申请日：2004-02-13
申请人： Koichi Fukuda , Yoshiaki Nakamura
发明人： Koichi Fukuda , Yoshiaki Nakamura
IPC分类号： G02B5/30 , G02F1/1335 , G02F1/13363 , G02F1/1333
CPC分类号： G02F1/133634 , G02F1/133555 , G02F2001/133531 , G02F2001/133638 , G02F2203/09
摘要： The present invention provides a liquid crystal display device. An optical film having negative uniaxial double refractive index ellipsoids is arranged below a semi-transmitting liquid crystal display cell and, thereafter, a λ/4 phase difference plate, a λ/2 phase difference plate and a polarizer are arranged. The orientation axis direction of the optical film having negative uniaxial double refractive index ellipsoids is substantially equal to the direction which is rotated by 90° in the clockwise direction from a resultant vector of the orientation axis direction of the upper orientation film and the orientation axis direction of the lower orientation film of the liquid crystal display cell. Further, phase lagging axis of the upper and lower λ/4 phase difference plate is set substantially equal to the orientation axis direction of the optical film having negative uniaxial double refractive index ellipsoids.
摘要翻译：本发明提供一种液晶显示装置。具有负单轴双折射率椭圆体的光学膜被布置在半透射液晶显示单元的下方，然后设置λ/ 4相位差板，λ/ 2相位差板和偏振器。具有负单轴性双折射率椭圆体的光学薄膜的取向轴方向与从上取向膜的取向轴方向和取向轴方向的合成矢量顺时针方向旋转90°的方向大致相等的液晶显示单元的下取向膜。此外，上下λ/ 4相位差板的相位滞后轴被设定为与具有负单轴双折射率椭圆体的光学膜的取向轴方向大致相等。

90. 发明申请

US20050072673A1 Hydrogen sensor and hydrogen detection system 审中-公开
标题翻译：氢传感器和氢气检测系统
公开(公告)号：US20050072673A1
公开(公告)日：2005-04-07
申请号：US10947430
申请日：2004-09-21
申请人： Koichi Fukuda
发明人： Koichi Fukuda
IPC分类号： G01N21/59 , G01N33/00 , G01N27/26
CPC分类号： G01N33/005
摘要： A hydrogen sensor for determining the content of hydrogen based on the transmittance of light includes a substrate having an n-type semiconductor layer placed thereon and also includes a metal layer that is placed on the n-type semiconductor layer, forms a Schottky junction with n-type semiconductor layer, and contains a metal of which the transmittance is varied when the metal adsorbs hydrogen.
摘要翻译：用于基于光的透射率确定氢含量的氢传感器包括其上放置有n型半导体层的衬底，并且还包括放置在n型半导体层上的金属层，与n形半导体层形成肖特基结并且含有当金属吸附氢时透射率变化的金属。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式