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81. 外观设计

USD626173S1 Ink cartridge for printer 有权
公开(公告)号：USD626173S1
公开(公告)日：2010-10-26
申请号：US29328855
申请日：2008-12-03
申请人： Ryoji Inoue , Naoki Tashiro , Hiroki Nakanishi , Yasuo Kotaki , Tetsuya Ohashi , Koichi Kubo
设计人： Ryoji Inoue , Naoki Tashiro , Hiroki Nakanishi , Yasuo Kotaki , Tetsuya Ohashi , Koichi Kubo

82. 发明授权

US07755934B2 Resistance change memory device 有权
标题翻译：电阻变化记忆装置
公开(公告)号：US07755934B2
公开(公告)日：2010-07-13
申请号：US11761772
申请日：2007-06-12
申请人： Haruki Toda , Koichi Kubo
发明人： Haruki Toda , Koichi Kubo
IPC分类号： G11C11/00
CPC分类号： G11C8/08 , G11C11/36 , G11C13/0004 , G11C13/0007 , G11C13/0028 , G11C13/004 , G11C13/0069 , G11C2013/0042 , G11C2013/009 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/147 , H01L45/1675
摘要： A resistance change memory device including: a substrate; cell arrays stacked thereabove, each including a matrix layout of memory cells; a write circuit configured to write a pair cell constituted by two neighboring memory cells; and a read circuit configured to read complementary resistance value states of the pair cell as one bit of data, wherein the memory cell includes a variable resistance element for storing as information a resistance value, which has a recording layer composed of a composite compound containing at least two types of cation elements, at least one type of the cation element being a transition element having “d”-orbit, in which electrons are incompletely filled, the shortest distance between adjacent cation elements being 0.32 nm or less.
摘要翻译：一种电阻变化存储器件，包括：衬底; 单元阵列堆叠在其上，每个包括存储单元的矩阵布局; 写入电路，被配置为写入由两个相邻存储器单元构成的对单元; 以及读取电路，被配置为将所述成对单元的互补电阻值状态读取为一位数据，其中所述存储单元包括用于存储作为信息的电阻值的可变电阻元件，所述电阻值具有由复合化合物组成的记录层，至少两种阳离子元素，至少一种阳离子元素是具有“d” - 轨道的过渡元素，其中电子未完全填充，相邻阳离子元素之间的最短距离为0.32nm以下。

83. 发明授权

US07729158B2 Resistance change memory device 有权
标题翻译：电阻变化记忆装置
公开(公告)号：US07729158B2
公开(公告)日：2010-06-01
申请号：US11761282
申请日：2007-06-11
申请人： Haruki Toda , Koichi Kubo
发明人： Haruki Toda , Koichi Kubo
IPC分类号： G11C11/00
CPC分类号： G11C5/02 , G11C7/18 , G11C13/0004 , G11C13/0007 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/147
摘要： A resistance change memory device including: a semiconductor substrate; cell arrays stacked above the substrate, each having memory cells, bit lines and word lines; a read/write circuit formed on the semiconductor substrate; first and second vertical wirings disposed to connect the bit lines to the read/write circuit; and third vertical wirings disposed the word lines to the read/write circuit. The memory cell includes a variable resistance element for storing as information a resistance value, which has a recording layer composed of a composite compound containing at least two types of cation elements, at least one type of the cation element being a transition element having “d” orbit, in which electrons are incompletely filled, the shortest distance between adjacent cation elements being 0.32 nm or less.
摘要翻译：一种电阻变化存储器件，包括：半导体衬底; 单元阵列堆叠在衬底上，每个阵列具有存储单元，位线和字线; 形成在半导体衬底上的读/写电路; 布置成将位线连接到读/写电路的第一和第二垂直布线; 并且第三垂直布线将字线布置到读/写电路。存储单元包括用于存储作为信息的电阻值的可变电阻元件，电阻值具有由包含至少两种阳离子元素的复合化合物组成的记录层，至少一种类型的阳离子元素是具有“d “轨道，其中电子不完全填充，相邻阳离子元素之间的最短距离为0.32nm或更小。

84. 外观设计

USD611532S1 Ink tank for printer 有权
公开(公告)号：USD611532S1
公开(公告)日：2010-03-09
申请号：US29320229
申请日：2008-06-24
申请人： Tatsuo Nanjo , Naoki Tashiro , Yasunori Senshiki , Yasuo Kotaki , Tetsuya Ohashi , Koichi Kubo
设计人： Tatsuo Nanjo , Naoki Tashiro , Yasunori Senshiki , Yasuo Kotaki , Tetsuya Ohashi , Koichi Kubo

85. 发明申请

US20100053280A1 INK TANK 有权
公开(公告)号：US20100053280A1
公开(公告)日：2010-03-04
申请号：US12549878
申请日：2009-08-28
申请人： Tetsuya Ohashi , Yasuo Kotaki , Ryoji Inoue , Koichi Kubo , Masashi Ogasawara
发明人： Tetsuya Ohashi , Yasuo Kotaki , Ryoji Inoue , Koichi Kubo , Masashi Ogasawara
IPC分类号： B41J2/175
CPC分类号： B41J2/17513
摘要： An ink tank containing ink including a pigment component effectively prevents a problem that an ink having a higher concentration and including a sedimentary pigment is led out, even in a case where the ink tank is left unused on a printing apparatus for a long time. To this end, an ink leading-out port placed in an ink containing chamber, and used to supply the ink to a printing head is located higher than a lowermost portion of the ink containing chamber, and is also formed in an inclined surface inclined to a gravitational direction. Thereby, the sedimentary pigment slides the inclined surface, and thus is settled down in a position away from the ink leading-out port.
摘要翻译：含有含有颜料成分的油墨的墨罐能够有效地防止即使长时间在打印装置上未使用墨水盒的情况下，也会引起浓度较高且含有沉积颜料的墨水的问题。为此，放置在墨水容纳室中并用于将油墨供应到打印头的墨水引出口位于墨水容纳室的最下部，并且还形成为倾斜的倾斜面引力方向。由此，沉积颜料使倾斜面滑动，因此在远离墨水导出口的位置上沉降。

86. 发明授权

US07663132B2 Resistance change memory device 有权
标题翻译：电阻变化记忆装置
公开(公告)号：US07663132B2
公开(公告)日：2010-02-16
申请号：US11761864
申请日：2007-06-12
申请人： Haruki Toda , Koichi Kubo
发明人： Haruki Toda , Koichi Kubo
IPC分类号： H01L29/04
CPC分类号： G11C13/0007 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/0092 , G11C2211/5622 , G11C2211/5631 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2472 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/126 , H01L45/147
摘要： A resistance change memory device including a substrate, first and second wiring lines formed above the substrate to be insulated from each other and memory cells disposed between the first and second wiring lines, wherein the memory cell includes: a variable resistance element for storing as information a resistance value; and a Schottky diode connected in series to the variable resistance element. The variable resistance element has a recording layer formed of a first composite compound expressed by AxMyOz (where “A” and “M” are cation elements different from each other; “O” oxygen; and 0.5≦x≦1.5, 0.5≦y≦2.5 and 1.5≦z≦4.5) and a second composite compound containing at least one transition element and a cavity site for housing a cation ion.
摘要翻译：一种电阻变化存储装置，包括基板，形成在基板上方以彼此绝缘的第一和第二布线以及设置在第一和第二布线之间的存储单元，其中存储单元包括：可变电阻元件，用于存储为信息电阻值和与可变电阻元件串联连接的肖特基二极管。可变电阻元件具有由AxMyOz表示的第一复合化合物形成的记录层（其中“A”和“M”是彼此不同的阳离子元素;“O”氧; 0.5 <= x <= 1.5,0.5 < = y <= 2.5和1.5 <= z <= 4.5）以及含有至少一个过渡元素和用于容纳阳离子离子的空腔部位的第二复合化合物。

87. 发明申请

US20080231986A1 INFORMATION RECORDING/REPRODUCING DEVICE 失效
标题翻译：信息记录/再现设备
公开(公告)号：US20080231986A1
公开(公告)日：2008-09-25
申请号：US12051613
申请日：2008-03-19
申请人： Shinya Aoki , Koichi Kubo , Junichi Ito , Junichi Akiyama
发明人： Shinya Aoki , Koichi Kubo , Junichi Ito , Junichi Akiyama
IPC分类号： G11B21/02
CPC分类号： G11B5/59655 , B82Y10/00 , G01Q80/00 , G11B5/59688 , G11B9/04 , G11B9/1454 , G11B9/1481
摘要： An information recording/reproducing device according to an example of the present invention includes a first head and a second head each having a conductive region formed of a conductive material, a recording medium having a data area from which data is read by the first head, and a servo burst area from which a servo burst signal is read by the second head, a driver for positioning the first head and the recording medium based on the servo burst signal, and a resistance element for covering a surface of the conductive region of the second head.
摘要翻译：根据本发明的示例的信息记录/再现装置包括：第一头部和第二头部，每个头部和第二头部均具有由导电材料形成的导电区域;记录介质，具有由第一头部读取数据的数据区域; 以及伺服脉冲串区域，伺服脉冲串信号由第二磁头读取，用于基于伺服脉冲串信号定位第一磁头和记录介质的驱动器，以及用于覆盖所述第二磁头的导电区域的表面的电阻元件第二个头。

88. 发明授权

US07400522B2 Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation 有权
标题翻译：电阻变化记忆装置具有由用于存储阳离子的第一和第二复合化合物形成的可变电阻元件
公开(公告)号：US07400522B2
公开(公告)日：2008-07-15
申请号：US11761397
申请日：2007-06-12
申请人： Haruki Toda , Koichi Kubo
发明人： Haruki Toda , Koichi Kubo
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0014 , G11C13/0016 , G11C13/004 , G11C13/0069 , G11C2013/0042 , G11C2013/009 , G11C2213/15 , G11C2213/31 , G11C2213/32 , G11C2213/55 , G11C2213/56 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/147 , H01L45/1675
摘要： A resistance change memory device including: a semiconductor substrate; at least one cell array formed above the semiconductor substrate, each memory cell having a stack structure of a variable resistance element and an access element, the access element having such an off-state resistance value in a certain voltage range that is ten times or more as high as that in a select state; and a read/write circuit formed on the semiconductor substrate as underlying the cell array, wherein the variable resistance element comprises a recording layer formed of a first composite compound expressed by AxMyOz (where “A” and “M” are cation elements different from each other; “O” oxygen; and 0.5≦x≦1.5, 0.5≦y≦2.5 and 1.5≦z≦4.5) and a second composite compound containing at least one transition element and a cavity site for housing a cation ion.
摘要翻译：一种电阻变化存储器件，包括：半导体衬底; 形成在所述半导体衬底上的至少一个单元阵列，每个存储单元具有可变电阻元件和存取元件的堆叠结构，所述存取元件具有在十倍或更多的一定电压范围内的截止电阻值与选择状态一样高; 以及形成在半导体衬底上的单元阵列下面的读/写电路，其中，所述可变电阻元件包括由由A x M y表示的第一复合化合物形成的记录层，其中“A”和“M”是彼此不同的阳离子元素;“O”氧; 0.5 <= x <= 1.5,0.5 <= y <= 2.5和 1.5 <= z <= 4.5）和包含至少一个过渡元素和用于容纳阳离子离子的空腔部位的第二复合化合物。

89. 发明申请

US20070133358A1 DATA READ/ WRITE DEVICE 有权
标题翻译：数据读/写设备
公开(公告)号：US20070133358A1
公开(公告)日：2007-06-14
申请号：US11535784
申请日：2006-09-27
申请人： Koichi Kubo , Takahiro Hirai , Shinya Aoki , Robin Carter , Chikayoshi Kamata
发明人： Koichi Kubo , Takahiro Hirai , Shinya Aoki , Robin Carter , Chikayoshi Kamata
IPC分类号： G11B11/00
CPC分类号： G11B9/04 , B82Y10/00 , G11B9/149 , G11B11/08 , G11C13/0007 , G11C13/0009 , G11C13/003 , G11C2213/12 , G11C2213/55 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/126 , H01L45/147
摘要： A data read/write device according to an example of the present invention includes a recording layer, and means for applying a voltage to the recording layer, generating a resistance change in the recording layer, and recording data. The recording layer is composed of a composite compound having at least two types of cation elements, at least one type of the cation element is a transition element having a “d” orbit in which electrons have been incompletely filled, and the shortest distance between the adjacent cation elements is 0.32 nm or less.
摘要翻译：根据本发明的示例的数据读/写设备包括记录层，以及用于向记录层施加电压，产生记录层中的电阻变化和记录数据的装置。记录层由具有至少两种阳离子元素的复合化合物组成，至少一种阳离子元素是具有电子未完全填充的“d”轨道的过渡元素，并且相邻的阳离子元素为0.32nm以下。

90. 发明申请

US20070052769A1 INK TANK AND RECORDING APPARATUS 有权
标题翻译：墨盒和记录装置
公开(公告)号：US20070052769A1
公开(公告)日：2007-03-08
申请号：US11467393
申请日：2006-08-25
申请人： Koichi Kubo , Shogo Kawamura , Tetsuya Ohashi , Ryoji Inoue , Hideki Ogura , Yasuo Kotaki
发明人： Koichi Kubo , Shogo Kawamura , Tetsuya Ohashi , Ryoji Inoue , Hideki Ogura , Yasuo Kotaki
IPC分类号： B41J2/175
CPC分类号： B41J2/17513
摘要： An ink tank includes a stirrer supported in a freely moveable manner near an inner wall of an ink storage chamber. When the stirrer moves closest to the inner wall, a predetermined gap is formed between opposing surfaces of the inner wall and the stirrer.
摘要翻译：墨罐包括以可自由移动的方式支撑在墨水储存室的内壁附近的搅拌器。当搅拌器最靠近内壁移动时，在内壁和搅拌器的相对表面之间形成预定间隙。

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