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81. 发明授权

US06590749B1 Dual AP pinned spin valve sensor biased by opposite ferromagnetic coupling fields and opposite demagnetizing fields 失效
标题翻译：双AP固定自旋阀传感器由相反的铁磁耦合场和相反的退磁场偏置
公开(公告)号：US06590749B1
公开(公告)日：2003-07-08
申请号：US09635719
申请日：2000-08-09
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B539
CPC分类号： B82Y10/00 , G11B5/3903 , G11B5/3954 , G11B5/3967
摘要： A dual antiparallel (AP) pinned spin valve sensor has a free layer which is biased by opposite ferromagnetic coupling fields and opposite demagnetizing fields from first and second AP pinned layer structures. The opposite magnetic coupling fields are obtained by appropriately sizing first and second spacer layers of the sensor and the opposite demagnetizing fields are obtained by appropriately sizing first and second AP pinned layers of a first AP pinned layer structure and appropriately sizing third and fourth AP pinned layers of a second AP pinned layer structure.
摘要翻译：双反平行（AP）钉扎自旋阀传感器具有通过相反的铁磁耦合场和来自第一和第二AP钉扎层结构的相反的退磁场偏置的自由层。通过适当地调整传感器的第一和第二间隔层的尺寸来获得相反的磁耦合场，并且通过适当地调整第一AP钉扎层结构的第一和第二AP钉扎层并适当地调整第三和第四AP钉扎层的尺寸来获得相反的退磁场的第二AP钉扎层结构。

82. 发明授权

US06587317B2 Spin valve sensor having a pinned layer structure composed of cobalt iron vanadium (CoFeV) 失效
公开(公告)号：US06587317B2
公开(公告)日：2003-07-01
申请号：US09565163
申请日：2000-05-03
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B5127
CPC分类号： B82Y10/00 , G11B5/3903 , G11B5/3967
摘要： A pinned layer structure composed of cobalt iron vanadium (CoFeV) is provided in a spin valve sensor for reducing sense current shunting and decreasing a sense current field exerted on a free layer structure. A preferred antiparallel (AP) pinned layer structure has an antiparallel coupling layer between first and second AP pinned layers wherein the first AP pinned layer interfaces a pinning layer and the second AP pinned layer interfaces a copper spacer layer. In a preferred embodiment the first AP pinned layer is cobalt iron vanadium (CoFeV) and the second AP pinned layer comprises first and second films wherein the first film is cobalt iron vanadium (CoFeV) and the second film is cobalt iron (CoFe) with the second film having a higher cobalt (Co) content than the first film and interfacing the copper spacer layer.

83. 发明授权

US06542343B1 Tunnel valve head design to lower resistance 失效
标题翻译：隧道阀头设计降低阻力
公开(公告)号：US06542343B1
公开(公告)日：2003-04-01
申请号：US09636386
申请日：2000-08-09
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3909 , G11B5/3925
摘要： A magnetic tunnel junction (MTJ) head for a magnetic recording system includes a MTJ valve and a first flux guide disposed proximate a first edge of the MTJ valve. The first flux guide has a first portion, which defines the track width, proximate a an air bearing surface of the MTJ head and a second portion proximate the first edge. The width of the first portion, the track width, is smaller than the width of the second portion, the MTJ valve's width. The resistance of the MTJ valve is lower since the cross-sectional area of the MTJ valve is not decreased as the track width is decreased. The MTJ head further includes a second flux guide proximate a second edge, which is farther from the air bearing surface than the first edge.
摘要翻译：用于磁记录系统的磁隧道结（MTJ）磁头包括MTJ阀和靠近MTJ阀的第一边缘设置的第一磁通引导件。第一通量引导件具有限定轨道宽度的第一部分，靠近MTJ头部的空气支承表面和靠近第一边缘的第二部分。第一部分的宽度，轨道宽度小于第二部分的宽度，MTJ阀的宽度。 MTJ阀的阻力较低，因为MTJ阀的横截面积不会随轨道宽度的减小而减小。 MTJ头还包括靠近第二边缘的第二通量引导件，其比空气支承表面比第一边缘更远。

84. 发明授权

US06538859B1 Giant magnetoresistive sensor with an AP-coupled low Hk free layer 有权
标题翻译：具有AP耦合低Hk自由层的巨磁阻传感器
公开(公告)号：US06538859B1
公开(公告)日：2003-03-25
申请号：US09630329
申请日：2000-07-31
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B533
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B2005/3996
摘要： A spin valve (SV) magnetoresistive sensor is provided having an AP-pinned layer, an AP-coupled free layer and a non-magnetic electrically conductive spacer layer sandwiched between the AP-pinned layer and the free layer. The AP-pinned layer comprises first and second ferromagnetic layers separated by an antiparallel coupling (APC) layer. The AP-coupled free layer comprises a third ferromagnetic layer of Co—Fe adjacent to the spacer layer, a fourth ferromagnetic layer of Co—Fe—Hf—O and an APC layer sandwiched between the third and fourth ferromagnetic layers. The easy axis of the Co—Fe third ferromagnetic layer has a transverse orientation while the easy axis of the Co—Fe—Hf—O fourth ferromagnetic layer has a longitudinal orientation due to its higher thermal stability resulting in a low net intrinsic uniaxial anisotropy Hk for the AP-coupled free layer. The Co—Fe—Hf—O material of the fourth ferromagnetic layer has high resistivity resulting in reduced sense current shunting by the free layer. In addition, the metal oxide material of the fourth ferromagnetic layer is known to cause specular scattering of electrons. The reduced sense current shunting and the specular scattering of electrons both contribute to improving the GMR coefficient of the SV sensor.
摘要翻译：提供自旋阀（SV）磁阻传感器，其具有AP夹持层，AP耦合自由层和夹在AP钉扎层和自由层之间的非磁性导电间隔层。 AP钉扎层包括由反平行耦合（APC）层隔开的第一和第二铁磁层。 AP耦合自由层包括邻近间隔层的Co-Fe的第三铁磁层，Co-Fe-Hf-O的第四铁磁层和夹在第三和第四铁磁层之间的APC层。 Co-Fe第三铁磁层的容易轴具有横向取向，而Co-Fe-Hf-O第四铁磁层的易轴由于其较高的热稳定性而具有纵向取向，导致低的本征单轴各向异性Hk 用于AP耦合自由层。第四铁磁层的Co-Fe-Hf-O材料具有高电阻率，导致由自由层分流的感测电流减小。此外，已知第四铁磁层的金属氧化物材料引起电子的镜面散射。减小的感测电流分流和电子的镜面散射有助于提高SV传感器的GMR系数。

85. 发明授权

US06501626B1 Read head with a combined second read gap and pinning layer for a top spin valve sensor 失效
标题翻译：读头与组合的第二读取间隙和钉扎层用于顶部自旋阀传感器
公开(公告)号：US06501626B1
公开(公告)日：2002-12-31
申请号：US09564225
申请日：2000-05-03
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B539
CPC分类号： B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B5/40
摘要： A read head is provided with a combined second read gap and pinning layer which pins a pinned layer structure of a top spin valve sensor. The second read gap layer is at least partially composed of alpha ferric oxide (&agr;Fe2O3) which pins the pinned layer by coercivity. The second read gap layer defines the track width of the read head and its alpha ferric oxide (&agr;Fe2O3) composition provides specular reflection of conduction electrons in the spin valve sensor.
摘要翻译：读头设置有组合的第二读取间隙和钉扎层，其钉扎顶部自旋阀传感器的钉扎层结构。第二读取间隙层至少部分地由通过矫顽力引导被钉扎层的α氧化铁（αFe2 O 3）组成。第二读取间隙层限定读取磁头的磁道宽度，并且其α氧化铁（αFe2 O 3）组成在自旋阀传感器中提供传导电子的镜面反射。

86. 发明授权

US06452763B1 GMR design with nano oxide layer in the second anti-parallel pinned layer 失效
标题翻译： GMR设计与纳米氧化层在第二反平行钉扎层
公开(公告)号：US06452763B1
公开(公告)日：2002-09-17
申请号：US09588253
申请日：2000-06-06
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B5127
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/012 , G11B5/3903 , H01F10/3295
摘要： A high GMR coefficient for a spin valve sensor is achieved through the addition of one or more nano oxide layers in the second anti-parallel (AP) pinned layer of the pinned section of a spin valve sensor. The improvement occurs through increases in the GMR coefficient and magnetic stability of the spin valve sensor. The new second anti-parallel AP-pinned layer is formed with a plurality of layers of a magnetized metal separated by nano oxide layers. The metal layer(s) preferably comprise CoFe and the nano oxide layers preferably comprise of CoFeO. A PtMn antiferromagnetic layer and a CoFe first AP-pinned layer may also be used.
摘要翻译：通过在自旋阀传感器的被钉扎部分的第二反平行（AP）钉扎层中添加一个或多个纳米氧化物层来实现自旋阀传感器的高GMR系数。通过自旋阀传感器的GMR系数和磁稳定性的增加发生改进。新的第二反平行AP钉扎层由多层由纳米氧化物层分隔的磁化金属形成。金属层优选包含CoFe，并且纳米氧化物层优选包含CoFeO。还可以使用PtMn反铁磁层和CoFe第一AP钉扎层。

87. 发明授权

US06400536B1 Low uniaxial anisotropy cobalt iron (COFE) free layer structure for GMR and tunnel junction heads 失效
标题翻译：用于GMR和隧道连接头的低单轴各向异性钴铁（COFE）自由层结构
公开(公告)号：US06400536B1
公开(公告)日：2002-06-04
申请号：US09281238
申请日：1999-03-30
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996
摘要： A multilayered free layer structure is provided for a spin valve sensor or a tunnel junction sensor wherein the net uniaxial anisotropy (HK) of the free layer structure is low, even though some of the layers of the free layer structure have a high uniaxial anisotropy. In a preferred embodiment this is accomplished by orienting the easy axes of the high uniaxial anisotropy layers perpendicular with respect to one another so that their uniaxial anisotropies counterbalance one another leaving a low net uniaxial anisotropy which may be simply the uniaxial anisotropy of a low uniaxial anisotropy layer in the free layer structure.
摘要翻译：为自旋阀传感器或隧道结传感器提供多层自由层结构，其中自由层结构的净单轴各向异性（HK）低，即使自由层结构的一些层具有高的单轴各向异性。在优选实施例中，这是通过将高单轴各向异性层的容易轴相对于彼此垂直的方向取向来实现的，使得它们的单轴各向异性彼此抵消，留下低的单轴单向各向异性，其可以简单地是单轴各向异性的单轴各向异性层在自由层结构中。

88. 发明授权

US06278589B1 Dual GMR sensor with a single AFM layer 失效
标题翻译：双GMR传感器，具有单个AFM层
公开(公告)号：US06278589B1
公开(公告)日：2001-08-21
申请号：US09280487
申请日：1999-03-30
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3954 , G11B2005/3996
摘要： A dual GMR sensor with a single antiferromagnetic (AFM) pinned layer is provided which has a thinner overall stack thickness and additive spin valve effects to increase the sensitivity of the dual sensor and counterbiasing of the free layers of the dual sensor so as to render the sensor insensitive to a magnitude and orientation of a sense current. The single pinning layer reduces the thickness of the dual sensor permitting the employment of an antiparallel (AP) pinned layer structure for each of the spin valve sensors of the dual sensor. Further, a preferred material for the pinning layer is iridium manganese (IrMn) which reduces the pinning layer to 50 Å-80 Å.
摘要翻译：提供具有单个反铁磁（AFM）钉扎层的双GMR传感器，其具有更薄的整体堆叠厚度和添加自旋阀效应，以增加双传感器的自由层的双重传感器和对偏的灵敏度，从而使传感器对感应电流的大小和方向不敏感。单个钉扎层减小双传感器的厚度，允许对双传感器的每个自旋阀传感器采用反平行（AP）钉扎层结构。此外，用于钉扎层的优选材料是将钉扎层减少到Å-80的铱锰（IrMn）。

89. 发明授权

US06271997B1 Read head spin valve sensor with triple antiparallel coupled free layer structure 失效
标题翻译：具有三重反平行耦合自由层结构的读头自旋阀传感器
公开(公告)号：US06271997B1
公开(公告)日：2001-08-07
申请号：US09447199
申请日：1999-11-22
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3954 , G11B2005/3996 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49067
摘要： A triple antiparallel (AP) coupled free layer structure is located between first and second pinned layer structures in a dual spin valve sensor. The triple AP coupled free layer structure includes first, second and third antiparallel (AP) coupled ferromagnetic free layers and nonmagnetic first and second antiparallel (AP) coupling layers. The first AP coupling layer is located between and interfaces the first and second AP coupled free layers and the second AP coupling layer is located between and interfaces the second and third AP coupled free layers. Magnetic moments of the first and third AP coupled free layers are parallel with respect to one another and, because of a strong antiparallel coupling, the second AP coupled free layer pins magnetic moments of the first and third AP coupled free layers antiparallel thereto. In a preferred embodiment the first and third AP coupled free layers are cobalt based for promoting a high magnetoresistance of the sensor and the second AP coupled free layer is nickel iron based for promoting sensitivity of the free layer structure to signal fields.
摘要翻译：三重反平行（AP）耦合自由层结构位于双自旋阀传感器中的第一和第二固定层结构之间。三重AP耦合自由层结构包括第一，第二和第三反并联（AP）耦合铁磁自由层和非磁性第一和第二反平行（AP）耦合层。第一AP耦合层位于第一和第二AP耦合自由层之间并且与第一AP耦合的自由层接合，并且第二AP耦合层位于第二和第三AP耦合的自由层之间并且与第二AP耦合的自由层接合。第一和第三AP耦合自由层的磁矩相对于彼此平行，并且由于强反平行耦合，第二AP耦合自由层引导第一和第三AP耦合自由层与其平行的磁矩。在优选实施例中，第一和第三AP耦合自由层是用于促进传感器的高磁阻的钴基，并且第二AP耦合自由层是用于促进自由层结构对信号场的灵敏度的镍铁。

90. 发明授权

US06219211B1 Current-pinned, current resettable soft AP-pinned spin valve sensor 失效
标题翻译：电流固定，电流可复位软AP固定自旋阀传感器
公开(公告)号：US06219211B1
公开(公告)日：2001-04-17
申请号：US09495053
申请日：2000-01-31
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B2005/3996
摘要： A soft anti-parallel (AP)-pinned spin valve (SV) sensor comprising an AP-pinned layer separated from a ferromagnetic free layer by a non-magnetic electrically conducting spacer. The AP-pinned layer includes a first ferromagnetic pinned layer separated from a second ferromagnetic pinned layer by an anti-parallel coupling layer. The second pinned layer further includes a first and second ferromagnetic sub-layers. The first pinned layer which is the farthest pinned layer from the free layer is made of soft (low coercivity) magnetic material. The use of a low coercivity first pinned layer allows the magnetic field generated by the sense current to be used in setting the magnetizations directions of the pinned layer and reset the magnetization direction during the disk operation in the case that the magnetization direction becomes random.
摘要翻译：软反平行（AP）定影自旋阀（SV）传感器包括通过非磁性导电间隔物从铁磁性自由层分离的AP钉扎层。 AP钉扎层包括通过反平行耦合层与第二铁磁性钉扎层分离的第一铁磁钉扎层。第二被钉扎层还包括第一和第二铁磁子层。与自由层最远的钉扎层的第一钉扎层由软（低矫顽力）磁性材料制成。在磁化方向变得随机的情况下，使用低矫顽力第一被钉扎层允许由感测电流产生的磁场用于设定被钉扎层的磁化方向，并且在盘操作期间复位磁化方向。

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