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    • 90. 发明授权
    • Migration imaging members
    • 迁移成像成员
    • US5672451A
    • 1997-09-30
    • US630296
    • 1996-04-11
    • Man C. TamLiqin ChenEdward G. ZwartzDaniel BihonMarie-Eve Perron
    • Man C. TamLiqin ChenEdward G. ZwartzDaniel BihonMarie-Eve Perron
    • G03G17/10
    • G03G17/10
    • Disclosed is a migration imaging member which comprises (a) a substrate, (b) a conductive layer comprising indium tin oxide dispersed in a polymeric binder, (c) a siloxane film charge blocking layer comprising a hydrolysis reaction product of a silane of the formula ##STR1## wherein R.sub.1 is an alkylidene group, R.sub.2 and R.sub.3 are each, independent of the other, a hydrogen atom, an alkyl group, a phenyl group, or a poly(ethyleneamino) group, and R.sub.4, R.sub.5, and R.sub.6 are each, independent of the others, alkyl groups, said siloxane having reactive hydroxyl and ammonium groups attached to silicon atoms, and (d) a softenable layer comprising a softenable material and a photosensitive migration marking material. Optionally an antistatic layer comprising indium tin oxide dispersed in a polymeric binder is situated on the surface of the substrate spaced from the softenable layer.
    • 公开了一种迁移成像构件,其包括(a)基底,(b)包含分散在聚合物粘合剂中的氧化铟锡的导电层,(c)硅氧烷膜电荷阻挡层,其包含式 其中R 1是亚烷基,R 2和R 3各自独立地为氢原子,烷基,苯基或聚(亚乙基氨基),R 4,R 5和R 6各自为 独立于其它烷基,所述硅氧烷具有连接到硅原子的反应性羟基和铵基团,和(d)包含可软化材料和光敏迁移标记材料的可软化层。 任选地,包含分散在聚合物粘合剂中的氧化铟锡的抗静电层位于与可软化层间隔开的衬底的表面上。