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    • 82. 发明授权
    • Organic semiconductor device, display using same, and imager
    • 有机半导体器件,使用其的显示器和成像器
    • US07868319B2
    • 2011-01-11
    • US10586538
    • 2005-01-20
    • Chihaya AdachiNaotoshi Suganuma
    • Chihaya AdachiNaotoshi Suganuma
    • H01J1/62
    • H01L27/3244H01L27/3234H01L51/5296
    • An organic semiconductor device in which recombination of holes and electrons and photoelectric conversion in an organic semiconductor layer are efficiently allowed to occur. The device comprises a bipolar organic semiconductor layer where electrons and holes move, a hole giving/receiving electrode which gives/receives holes to/from the organic semiconductor layer, an electron giving/receiving electrode which is spaced a predetermined distance from the hole giving/receiving electrode and gives/receives electrons to/from the organic semiconductor layer, a hole-side gate electrode which is opposed to a region of the organic semiconductor layer near the hole giving/receiving electrode with an insulating layer between the hole-side gate electrode and the region and serves to control the hole distribution in the organic semiconductor layer, and an electron-side gate electrode which is opposed to the region of the organic semiconductor layer with the insulating layer therebetween and serves to control the electron distribution in the organic semiconductor layer.
    • 有效地允许发生空穴和电子的复合和有机半导体层中的光电转换的有机半导体器件。 该器件包括电子和空穴移动的双极有机半导体层,向/从有机半导体层发出/接收空穴的空穴给予/接收电极,与给予/接收电极间隔预定距离的电子给予/接收电极, 接收电极并向/从有机半导体层发出/接收电子;空穴侧栅极电极,其与有机半导体层附近的有机半导体层的区域相邻,所述有机半导体层附近具有绝缘层,所述绝缘层位于孔侧栅电极 和该区域,用于控制有机半导体层中的空穴分布,以及与有机半导体层的与绝缘层之间的绝缘层相对的电子侧栅电极,用于控制有机半导体中的电子分布 层。
    • 88. 发明申请
    • Organic semiconductor device and method for manufacturing same
    • 有机半导体装置及其制造方法
    • US20070024179A1
    • 2007-02-01
    • US10569807
    • 2004-08-25
    • Takahito OyamadaChihaya Adachi
    • Takahito OyamadaChihaya Adachi
    • H01J1/62H01J63/04H01L33/00
    • H01L51/105H01L51/0053H01L51/5225Y10S428/917
    • An organic semiconductor device includes organic semiconductor layers (3, 4) and an electron injecting electrode (5) which is composed of MgAu alloy and injects electrons into the organic semiconductor layers (3, 4). The MgAu alloy forming the electron injecting electrode (5) may contain not more than 85 atom % of Au. The organic semiconductor device may further include a hole injecting electrode (2) for injecting holes into the organic semiconductor layers (3, 4). The electron injecting electrode and the hole injecting electrode are arranged apart from each other in such a manner that they fit to each other. The organic semiconductor device may further include a gate electrode which is arranged opposite, via an insulating film, to the region between the electron injecting electrode and the hole injecting electrode.
    • 有机半导体器件包括有机半导体层(3,4)和由MgAu合金构成的电子注入电极(5),并将电子注入到有机半导体层(3,4)中。 形成电子注入电极(5)的MgAu合金可以含有不超过85原子%的Au。 有机半导体器件还可以包括用于将空穴注入到有机半导体层(3,4)中的空穴注入电极(2)。 电子注入电极和空穴注入电极以彼此适配的方式彼此分开布置。 有机半导体器件还可以包括通过绝缘膜相对布置在电子注入电极和空穴注入电极之间的区域的栅电极。
    • 89. 发明申请
    • ORGANIC SEMICONDUCTOR DEVICE
    • 有机半导体器件
    • US20060214571A1
    • 2006-09-28
    • US11277458
    • 2006-03-24
    • Yoshiaki YamamotoTakahito OyamadaChihaya Adachi
    • Yoshiaki YamamotoTakahito OyamadaChihaya Adachi
    • H01L51/00
    • H01L51/0512H01L51/0037H01L51/0038H01L51/52H01L51/5203
    • An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.
    • 具有垂直结构的有机半导体器件具有有机薄膜晶体管和发光元件的功能,其中在形成栅电极的情况下可以控制有机薄膜晶体管和发光元件两者的电特性 具有有机导电膜及其制造方法。 上述有机半导体器件具有以下结构:有机半导体膜被夹在用作有源薄膜晶体管的源电极和漏电极的一对电极之间,并且还用作发光元件的阳极和阴极, 作为栅电极的薄的有机导电膜被夹在有机半导体膜之间,有机导电膜的一部分与辅助电极电连接,由此有机薄膜晶体管和发光元件两者的电特性可以 被控制。