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81. 发明申请

US20100241367A1 Sensor, Program Storage Unit, Control Unit, and Promgram Storage Medium 审中-公开
标题翻译：传感器，程序存储单元，控制单元和Promgram存储介质
公开(公告)号：US20100241367A1
公开(公告)日：2010-09-23
申请号：US12225302
申请日：2006-05-29
申请人： Takanobu Yada , Takashi Fujii
发明人： Takanobu Yada , Takashi Fujii
IPC分类号： G06F19/00 , G01F1/00 , G01L7/00
CPC分类号： G01F1/34 , G01F1/50 , G01F25/0007
摘要： At a time of a teaching mode that is performed before conditions of a flow path where fluid flows, a pressure and a flow rate of the fluid are sampled. Also at a time of a detection mode to detect the conditions of the flow path, the pressure and the flow rate are sampled. Then, in a case where a difference between the flow rate in the teaching mode in the pressure obtained in the detection mode and the flow rate in the detection mode is larger than a predetermined value, it is determined that clogging has been caused in the flow path. A processing program for this case is selectively transmitted in advance from a processing program storage device 50 that stores a plurality of processing programs to the sensor 30.
摘要翻译：在流体流动的流路的条件之前进行的示教模式的时刻，对流体的压力和流量进行采样。此外，在检测流路的状态的检测模式时，对压力和流量进行采样。然后，在检测模式中获得的压力中的示教模式中的流量与检测模式中的流量之间的差异大于预定值的情况下，确定在流程中已经引起堵塞路径。预先从存储多个处理程序的处理程序存储装置50向传感器30发送这种情况的处理程序。

82. 发明申请

US20100119956A1 NONAQUEOUS ELECTROLYTE FOR SECONDARY BATTERY AND NONAQUEOUS-ELECTROLYTE SECONDARY BATTERY EMPLOYING THE SAME 有权
标题翻译：二次电池用非电解电解质和非电解电解质二次电池
公开(公告)号：US20100119956A1
公开(公告)日：2010-05-13
申请号：US12594513
申请日：2008-04-04
申请人： Hiroyuki Tokuda , Takashi Fujii , Minoru Kotato , Masahiro Takehara , Masamichi Onuki , Youichi Ohashi , Shinichi Kinoshita
发明人： Hiroyuki Tokuda , Takashi Fujii , Minoru Kotato , Masahiro Takehara , Masamichi Onuki , Youichi Ohashi , Shinichi Kinoshita
IPC分类号： H01M10/056
CPC分类号： H01M10/0567 , H01M4/133 , H01M4/134 , H01M4/587 , H01M10/052 , H01M10/0525 , H01M10/056 , H01M10/0569 , H01M2300/0025 , H01M2300/004 , Y02E60/122
摘要： An object is to provide a nonaqueous electrolyte and a nonaqueous-electrolyte secondary battery which have excellent discharge load characteristics and are excellent in high-temperature storability, cycle characteristics, high capacity, continuous-charge characteristics, storability, gas evolution inhibition during continuous charge, high-current-density charge/discharge characteristics, discharge load characteristics, etc. The object has been accomplished with a nonaqueous electrolyte which comprises: a monofluorophosphate and/or a difluorophosphate; and further a compound having a specific chemical structure or specific properties.
摘要翻译：本发明提供一种非水电解质和非水电解质二次电池，其具有优异的放电负荷特性，并且具有优异的高温储存性，循环特性，高容量，连续充电特性，储存性，连续充电期间的放气抑制，高电流密度充放电特性，放电负荷特性等。本发明的目的是通过一种非水电解质实现的，该非水电解质包括：一氟磷酸盐和/或二氟磷酸盐; 以及具有特定化学结构或特定性质的化合物。

83. 发明申请

US20100099031A1 NONAQUEOUS ELECTROLYTES AND NONAQUEOUS-ELECTROLYTE SECONDARY BATTERIES EMPLOYING THE SAME 有权
标题翻译：使用非电解电解质和非电解电解质二次电池
公开(公告)号：US20100099031A1
公开(公告)日：2010-04-22
申请号：US12580507
申请日：2009-10-16
申请人： Ryoichi Kato , Hiroyuki Tokuda , Takashi Fujii , Minoru Kotato , Masahiro Takehara , Masamichi Onuki , Youichi Ohashi , Shinichi Kinoshita
发明人： Ryoichi Kato , Hiroyuki Tokuda , Takashi Fujii , Minoru Kotato , Masahiro Takehara , Masamichi Onuki , Youichi Ohashi , Shinichi Kinoshita
IPC分类号： H01M10/0569
CPC分类号： H01M10/0567 , H01M4/133 , H01M4/583 , H01M4/587 , H01M4/62 , H01M10/052 , H01M10/0525 , H01M10/0569 , H01M2300/0022 , Y02E60/122
摘要： A subject is to provide a nonaqueous electrolyte excellent in cycle performances such as capacity retention after cycling, output after cycling, discharge capacity after cycling, and cycle discharge capacity ratio, output characteristics, high-temperature storability, low-temperature discharge characteristics, heavy-current discharge characteristics, high-temperature storability, safety, high capacity, high output, high-current-density cycle performances, compatibility of these performances, etc. Another subject is to provide a nonaqueous-electrolyte secondary battery employing the nonaqueous electrolyte. The subjects have been accomplished with a nonaqueous electrolyte which contains a monofluorophosphate and/or a difluorophosphate and further contains a compound having a specific chemical structure or specific properties.
摘要翻译：本发明提供循环后的容量保持率，循环后的输出，循环后的放电容量，循环放电容量比，输出特性，高温保存性，低温放电特性等循环性能优异的非水电解液，电流放电特性，高温保存性，安全性，高容量，高输出，高电流密度循环性能，这些性能的相容性等。另一个目的是提供一种使用非水电解质的非水电解质二次电池。受试者已经用包含单氟磷酸盐和/或二氟磷酸盐的非水电解质完成，并且还含有具有特定化学结构或具体特性的化合物。

84. 发明申请

US20090100913A1 CONDUCTIVE MATERIAL CONCENTRATION MEASURING DEVICE AND MAGNETIC MATERIAL CONCENTRATION MEASURING DEVICE 有权
标题翻译：导电材料浓度测量装置和磁性材料浓度测量装置
公开(公告)号：US20090100913A1
公开(公告)日：2009-04-23
申请号：US12297451
申请日：2007-04-26
申请人： Takashi Fujii
发明人： Takashi Fujii
IPC分类号： G01N11/00
CPC分类号： G01N27/08 , G01N33/2858
摘要： A detection unit 4 with detection means 3 and fluid inflow/outflow guide means 2 is connected to a passage 1 for fluid with conductive material or to a pool section 5 for pooling of the fluid. The detection unit 4 guides inflow and outflow of the fluid through the fluid inflow/outflow guide means 2 and detects a concentration of conductive material through the detection means 4. A concentration of conductive material in the fluid is continuously measured with high accuracy.
摘要翻译：具有检测装置3和流体流入/流出引导装置2的检测单元4连接到用于具有导电材料的流体的通道1或用于汇集流体的池部分5。检测单元4引导通过流体流入/流出引导装置2的流体的流入和流出，并且通过检测装置4检测导电材料的浓度。以高精度连续地测量流体中的导电材料的浓度。

85. 发明申请

US20080121344A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080121344A1
公开(公告)日：2008-05-29
申请号：US12023874
申请日：2008-01-31
申请人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
发明人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
IPC分类号： C23F1/00 , C23C16/513
CPC分类号： C23C16/4581 , C23C16/4586 , C23C16/46 , H01J2237/2001 , H01L21/67109 , H01L21/6719
摘要： A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.
摘要翻译：一种用于通过减小处理室内的压力来处理样品的等离子体处理方法，包括将样品安装在设置在处理室中的样本保持器上，以及使用在样品架上方的处理室中产生的等离子体进行处理，同时为热传递到安装有样品的样品保持器的表面与样品的后表面之间的空间。样品保持器在样品安装的表面具有多个基本环形的凹陷部分。设置在样品保持架的中心部分相对于外周部分的凹陷部分和样品之间的空间中的压力被设定为低于外周部分的凹陷部分和样品之间的空间中的压力。

86. 发明授权

US07357118B2 Throttle body 失效
标题翻译：节气门体
公开(公告)号：US07357118B2
公开(公告)日：2008-04-15
申请号：US11395347
申请日：2006-03-31
申请人： Takashi Fujii , Takeshi Nagatsu
发明人： Takashi Fujii , Takeshi Nagatsu
IPC分类号： F02D11/04 , F02M51/00
CPC分类号： F02D11/06 , F02D9/107
摘要： A throttle valve comprises an intake passage. A throttle shaft extends in a generally vertical direction. The lower end of the throttle shaft passes through the throttle valve and projects downward. A throttle lever is connected to the downwardly projecting lower end. The throttle lever is joined to a throttle wire. A fuel injector attachment seat is positioned on one side of the throttle shaft and an intake pressure sensor attachment seat is provided on the other side of the throttle shaft when viewed in the direction along the intake passage.
摘要翻译：节流阀包括进气通道。节流轴在大致垂直的方向上延伸。节气门轴的下端通过节流阀向下突出。节流杆连接到向下突出的下端。节流杆连接到节流丝。燃料喷射器安装座位于节气门轴的一侧，并且当沿着进气通道的方向观察时，在节气门轴的另一侧设有进气压力传感器安装座。

87. 发明申请

US20070044716A1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20070044716A1
公开(公告)日：2007-03-01
申请号：US11508187
申请日：2006-08-23
申请人： Tsutomu Tetsuka , Toshio Masuda , Naoshi Itabashi , Masanori Kadotani , Takashi Fujii
发明人： Tsutomu Tetsuka , Toshio Masuda , Naoshi Itabashi , Masanori Kadotani , Takashi Fujii
IPC分类号： C23C16/00
CPC分类号： H01J37/32082 , C23C16/4401 , C23C16/45565 , C23C16/505 , H01J37/3244 , H01J37/32477 , H01J37/32495 , H01J37/32504 , H01J37/32559
摘要： The invention provides a plasma processing apparatus aimed at suppressing the corrosion caused by reactive gas and heavy-metal contamination caused by plasma damage of components constituting the high-frequency electrode and gas supply unit. The plasma processing apparatus comprises a processing chamber 1 for subjecting a processing substrate 4 to plasma processing, gas supply means 17, 16 and 11 for feeding gas to the processing chamber 1, and an antenna electrode 10 for supplying high-frequency radiation for discharging the gas to generate plasma, wherein the gas supply means includes a gas shower plate 11 having gas discharge holes on the surface exposed to plasma, and a portion of or a whole surface of the conductor 10 exposed to gas constituting the antenna-electrode side of the gas supply means is subjected to ceramic spraying containing no heavy metal to form a protecting film 12.
摘要翻译：本发明提供一种等离子体处理装置，旨在抑制由构成高频电极和气体供应单元的部件的等离子体损伤引起的反应性气体和重金属污染引起的腐蚀。等离子体处理装置包括用于对处理基板4进行等离子体处理的处理室1，用于将气体供给到处理室1的气体供给装置17,16和11以及用于提供高频辐射的天线电极10 气体产生等离子体，其中气体供给装置包括在暴露于等离子体的表面上具有气体排放孔的气体喷淋板11和暴露于构成天线电极侧的气体的导体10的一部分或整个表面气体供给装置经受不含重金属的陶瓷喷涂以形成保护膜12。

88. 发明授权

US07118147B2 Handling robot system having robot hand 失效
标题翻译：处理具有机器人手的机器人系统
公开(公告)号：US07118147B2
公开(公告)日：2006-10-10
申请号：US10965204
申请日：2004-10-15
申请人： Takashi Fujii
发明人： Takashi Fujii
IPC分类号： B25J15/04 , B25J9/10
CPC分类号： B25J15/0253
摘要： In a robot hand according to the present invention, a first-type grasping claw driven by a servo motor on a hand base and a second-type grasping claw having no actuator are used with the grasping claws mounted on each holding unit. The second-type grasping claw is movable in a direction perpendicular to a moving direction of the first-type grasping claw. The robot is operated so that an external force is applied to the grasping claw by bringing the grasping claw into contact with a contact surface of a stationary stand member, thereby to change a position of the grasping claw relative to the hand base and that grasping claw is locked at that position by a brake mechanism. Each grasping claw is adapted to be able to be mounted or dismounted on or from the holding unit using a pull bolt and a retaining mechanism, and can be automatically changed by the robot operation. By attaching the pull bolt to the workpiece in advance, the retaining mechanism also can be used for holding the workpiece.
摘要翻译：在根据本发明的机器人手中，使用由手持基座上的伺服电动机驱动的第一类型抓取爪和不具有致动器的第二类型抓取爪，其中夹持爪安装在每个保持单元上。第二种抓取爪可以在与第一类型抓取爪的移动方向垂直的方向上移动。操作机器人，使得抓握爪与固定支架的接触表面接触而将外力施加到抓取爪，从而改变抓爪相对于手基座的位置，并且抓爪通过制动机构锁定在该位置。每个抓取爪适于能够使用拉螺栓和保持机构从保持单元安装或拆卸，并且可以通过机器人操作自动地改变。通过将拉螺栓预先安装到工件上，保持机构也可以用于保持工件。

89. 发明申请

US20060132798A1 Method and apparatus for determining endpoint of semiconductor element fabricating process 有权
标题翻译：用于确定半导体元件制造工艺的端点的方法和装置
公开(公告)号：US20060132798A1
公开(公告)日：2006-06-22
申请号：US11340559
申请日：2006-01-27
申请人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji , Hideyuki Yamamoto
发明人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji , Hideyuki Yamamoto
IPC分类号： G01B11/02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
摘要翻译：对应于正在处理的第一材料的预定台阶高度的干涉光的差分值的标准图案和对应于材料的预定剩余掩模层厚度的干涉光的差分值的标准图案被设置。这些标准模式使用波长作为参数。然后，测量具有与第一材料相同结构的第二材料的多个波长的干涉光的强度。具有波长作为参数的实际图案由所测量的干涉光强度的差分值确定。基于标准图案和差分值的实际图案，确定第二材料的台阶高度和剩余掩模层厚度。

90. 发明授权

US07009715B2 Method and apparatus for determining endpoint of semiconductor element fabricating process and method and apparatus for processing member to be processed 有权
公开(公告)号：US07009715B2
公开(公告)日：2006-03-07
申请号：US10978412
申请日：2004-11-02
申请人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji , Hideyuki Yamamoto
发明人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji , Hideyuki Yamamoto
IPC分类号： G01B9/02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.

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