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    • 83. 发明授权
    • Method and apparatus for light emission utilizing an OLED with a microcavity
    • 利用具有微腔的OLED发光的方法和装置
    • US08987985B2
    • 2015-03-24
    • US12100316
    • 2008-04-09
    • Franky So
    • Franky So
    • H01L51/52H01L51/50
    • H01L51/5036H01L51/5265
    • Provided is an OLED device and method of making the OLED device. According to an embodiment, the OLED device incorporates a microcavity structure including a dielectric mirror formed on a glass substrate, an anode formed above the dielectric mirror, an organic film layer formed above the anode, and a reflective electrode formed above the organic film layer such that the cavity is formed in the organic film layer by the dielectric mirror and the reflective electrode. The OLED device with microcavity structure can incorporate one or more phosphors deposited on an underside of the glass substrate such that light of additional wavelengths can be generated by the OLED device.
    • 提供了一种制造OLED器件的OLED器件和方法。 根据实施例,OLED器件包括微腔结构,其包括形成在玻璃基板上的电介质镜,形成在电介质镜上方的阳极,形成在阳极上方的有机膜层,以及形成在有机膜层上方的反射电极, 通过电介质镜和反射电极在有机膜层中形成空腔。 具有微腔结构的OLED器件可以结合一个或多个沉积在玻璃基底的下侧上的磷光体,使得可以由OLED器件产生附加波长的光。
    • 85. 发明授权
    • Method and apparatus for infrared detection and display
    • 用于红外线检测和显示的方法和装置
    • US08405028B2
    • 2013-03-26
    • US12910473
    • 2010-10-22
    • Franky So
    • Franky So
    • G02F1/01
    • H01L27/3227H01L27/288H01L27/307H01L51/0053H01L51/0081H01L51/0504H01L51/4213H01L51/428Y02E10/52Y02E10/549Y02P70/521
    • Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device.
    • 本发明的实施例涉及用于红外(IR)检测的方法和装置。 可以利用有机层产生用于检测IR辐射的光电晶体管。 IR检测器的波长范围可以通过掺入对不同波长的光子敏感的材料来修改。 可以将与光电晶体管的吸收层的主体有机材料不同波长的光子敏感的材料的量子点结合到吸收层中,以增强具有与量子点的材料相关的波长的光子的吸收。 可以使用光电导体结构来代替光电晶体管。 光电导体可以并入PbSe或PbS量子点。 光电导体可以掺入有机材料和OLED结构的一部分。 可以向用户显示检测到的IR图像。 可以使用有机材料来制造有机发光装置。
    • 87. 发明申请
    • MICROCAVITY OLEDS FOR LIGHTING
    • MICROCAVITY OLED用于照明
    • US20120305902A1
    • 2012-12-06
    • US13575347
    • 2011-02-22
    • Franky So
    • Franky So
    • H01L27/32
    • H01L51/5271H01L27/3211H01L51/0037H01L51/0059H01L51/0085H01L51/5265H01L2251/5361
    • Various methods and systems are provided for related to organic light emitting diodes (OLEDs) having a microcavity In one embodiment, a white-light source includes a first microcavity organic light emitting diode (OLED) configured to emit a narrow spectrum of blue light, a second microcavity OLED configured to emit a narrow spectrum of green light, and a third microcavity OLED configured to emit a narrow spectrum of red light In another embodiment, a light source includes a plurality of OLEDs disposed on a glass substrate Each of the OLEDs is configured to emit light in substantially orthogonal to the glass substrate in a predefined spectrum Each of the OLEDs includes a semi-reflecting mirror, and an emitting layer, where the emitting layer in each OLED corresponds to a respective color of light emitted by the OLED.
    • 提供了与具有微腔的有机发光二极管(OLED)相关的各种方法和系统。在一个实施例中,白光源包括被配置为发射窄光谱的蓝光的第一微腔有机发光二极管(OLED), 第二微腔OLED被配置为发射窄光谱的绿光,以及构造成发射窄光谱的红光的第三微腔OLED。在另一实施例中,光源包括设置在玻璃基板上的多个OLED。每个OLED被配置 以预定光谱发射基本上与玻璃基板正交的光。每个OLED包括半反射镜和发光层,其中每个OLED中的发光层对应于由OLED发射的光的相应颜色。
    • 89. 发明授权
    • Method and apparatus for imaging utilizing an ultrasonic imaging sensor array
    • 利用超声波成像传感器阵列成像的方法和装置
    • US07893474B2
    • 2011-02-22
    • US12279412
    • 2007-02-14
    • Franky SoJuan Claudio Nino
    • Franky SoJuan Claudio Nino
    • H01L21/02
    • H01L27/20H01L29/4908
    • The subject invention pertains to a piezoelectric device structure for improved acoustic wave sensing and/or generation, and process for making same. The piezoelectric thin film field effect transducer can be a thin film transistor (TFT) with either a piezoelectric film gate or a composite gate having a dielectric film and a piezoelectric film. The TFT structure can be either a top gate device or a bottom gate device. In an embodiment, the piezoelectric device structure can be used to form an array of piezoelectric thin film field effect transducers. A TFT switch can drive each piezoelectric transducer in the array. The piezoelectric transducers can both generate and sense acoustic waves. In a sensing mode, a signal from an acoustic wave can be collected at a readout terminal of the piezoelectric transducer. In a generating mode, an excitation signal can be applied across the piezoelectric transducer while the switch is ‘on’.
    • 本发明涉及用于改善声波感测和/或产生的压电装置结构及其制造方法。 压电薄膜场效应传感器可以是具有压电薄膜栅极或具有电介质膜和压电薄膜的复合栅极的薄膜晶体管(TFT)。 TFT结构可以是顶栅装置或底栅装置。 在一个实施例中,压电器件结构可用于形成压电薄膜场效应传感器阵列。 TFT开关可以驱动阵列中的每个压电换能器。 压电换能器可以产生和感测声波。 在感测模式中,可以在压电换能器的读出端收集来自声波的信号。 在发电模式下,当开关处于“开”状态时,可以在压电换能器两端施加激励信号。
    • 90. 发明申请
    • METHOD AND APPARATUS FOR INFRARED DETECTION AND DISPLAY
    • 用于红外检测和显示的方法和装置
    • US20100181552A1
    • 2010-07-22
    • US11865505
    • 2007-10-01
    • Franky So
    • Franky So
    • H01L31/0352H01L31/12H01L31/101
    • H01L27/3227H01L27/288H01L27/307H01L51/0053H01L51/0081H01L51/0504H01L51/4213H01L51/428Y02E10/52Y02E10/549Y02P70/521
    • Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device.
    • 本发明的实施例涉及用于红外(IR)检测的方法和装置。 可以利用有机层产生用于检测IR辐射的光电晶体管。 IR检测器的波长范围可以通过掺入对不同波长的光子敏感的材料来修改。 可以将与光电晶体管的吸收层的主体有机材料不同波长的光子敏感的材料的量子点结合到吸收层中,以增强具有与量子点的材料相关的波长的光子的吸收。 可以使用光电导体结构来代替光电晶体管。 光电导体可以并入PbSe或PbS量子点。 光电导体可以掺入有机材料和OLED结构的一部分。 可以向用户显示检测到的IR图像。 可以使用有机材料来制造有机发光装置。