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81. 发明授权

US5982002A Light valve having a semiconductor film and a fabrication process thereof 失效
标题翻译：具有半导体膜的光阀及其制造方法
公开(公告)号：US5982002A
公开(公告)日：1999-11-09
申请号：US9710
申请日：1993-01-27
申请人： Hiroaki Takasu , Yoshikazu Kojima , Kunihiro Takahashi
发明人： Hiroaki Takasu , Yoshikazu Kojima , Kunihiro Takahashi
IPC分类号： G02F1/1362 , H01L21/336 , H01L29/786 , H01L29/94
CPC分类号： H01L29/66772 , G02F1/13454 , H01L29/78612 , H01L29/78654
摘要： A miniaturized light valve with a surface area on the order of several centimeters may be successfully formed using a composite substrate and an opposing substrate which has thereon an electrode and which is bonded to the composite substrate at a predetermined gap therefrom. An electro-optical material, such as a liquid crystal compound, is confined within the gap. The composite substrate includes a single crystal layer of a semiconductor material provided on a lower level insulation layer. The single crystal layer is formed with a source region, a drain region, and a channel region of a MOS transistor, and a gate insulation film is provided on the single crystal layer in alignment with the channel region. Further, a gate electrode is provided on the gate insulation film. The composite substrate further includes a pixel electrode on the upper major surface of an insulation layer deposited over the MOS transistor and in contact with the drain region. The single crystal semiconductor thin film is limited to 0.3 microns in thickness resulting in a light valve characterized in that a parasitic channel and a bipolar action in the MOS transistor are eliminated for the purpose of suppressing an increase in the OFF current, or leakage current caused by incident light radiation onto the transistors.
摘要翻译：可以使用复合基板和相对的基板成功地形成表面积为几厘米数量级的小型化的光阀，所述复合基板和相对的基板上具有电极，并且以相对于基板的预定间隙结合在复合基板上。诸如液晶化合物的电光材料被限制在间隙内。复合基板包括设置在下层绝缘层上的半导体材料的单晶层。单晶层由MOS晶体管的源极区，漏极区和沟道区形成，并且栅极绝缘膜设置在与沟道区对准的单晶层上。此外，在栅极绝缘膜上设置栅电极。复合衬底还包括沉积在MOS晶体管上并与漏区接触的绝缘层的上主表面上的像素电极。单晶半导体薄膜的厚度限制在0.3微米，导致光阀的特征在于消除了MOS晶体管中的寄生沟道和双极作用，以抑制关断电流的增加或导致的漏电流通过入射光辐射到晶体管上。

82. 发明授权

US5946413A Image analyzing apparatus for producing a profile of image data 失效
标题翻译：用于产生图像数据的轮廓的图像分析装置
公开(公告)号：US5946413A
公开(公告)日：1999-08-31
申请号：US581488
申请日：1995-12-29
申请人： Hiromi Shibata , Kunihiro Takahashi
发明人： Hiromi Shibata , Kunihiro Takahashi
IPC分类号： G01N33/60 , G01T1/00 , G06T1/00 , G06T7/60 , G21K4/00 , H04N1/407 , H04N1/409 , G06K9/00
CPC分类号： H04N1/409 , H04N1/4074
摘要： An image analyzing apparatus includes a display for displaying an image and an image analyzer including a profile data producing section for producing profile data corresponding to a profile of density in a region specified by a figure formed at a desired position in the image displayed on the display, a noise level data producing section for producing noise level data indicating a level of noise contained in the profile, and a peak recognizing section for smoothing the profile data in accordance with the noise level data and producing peak data regarding peaks contained in the profile based on the smoothed profile data. The display is constituted so as to be able to display the profile. According to the thus constituted image analyzing apparatus, it is possible to automatically and properly recognize peaks in a profile irrespective of noise contained in the image.
摘要翻译：图像分析装置包括用于显示图像的显示器和图像分析器，该图像分析器包括：轮廓数据产生部分，用于产生与在形成在显示在显示器上的图像中的期望位置处形成的图形所指定的区域中的浓度分布相对应的轮廓数据，噪声电平数据产生部分，用于产生表示包含在轮廓中的噪声电平的噪声电平数据;以及峰值识别部分，用于根据噪声电平数据平滑轮廓数据，并产生关于基于轮廓的包含的峰值的峰值数据在平滑的配置文件数据上。显示器被构造成能够显示轮廓。根据这样构成的图像分析装置，无论图像中包含的噪声如何，都可以自动且适当地识别轮廓中的峰值。

83. 发明授权

US5728591A Process for manufacturing light valve device using semiconductive composite substrate 失效
标题翻译：使用半导体复合基板制造光阀装置的工艺
公开(公告)号：US5728591A
公开(公告)日：1998-03-17
申请号：US460536
申请日：1995-06-02
申请人： Kunihiro Takahashi , Yoshikazu Kojima , Hiroaki Takasu , Nobuyoshi Matsuyama , Hitoshi Niwa , Tomoyuki Yoshino , Tsuneo Yamazaki
发明人： Kunihiro Takahashi , Yoshikazu Kojima , Hiroaki Takasu , Nobuyoshi Matsuyama , Hitoshi Niwa , Tomoyuki Yoshino , Tsuneo Yamazaki
IPC分类号： H01L29/78 , G02F1/1335 , G02F1/1362 , H01L21/336 , H01L21/762 , H01L21/77 , H01L21/84 , H01L29/786
CPC分类号： G02F1/13454 , H01L21/76264 , H01L27/1214 , H01L27/1266 , H01L29/66772 , H01L29/78648 , G02F1/133512 , G02F2001/13613 , G02F2202/105 , H01L21/76289 , H01L2221/68363 , Y10S148/012 , Y10S148/135
摘要： A process for manufacturing a light valve device comprises forming a transparent insulating thin film layer on a surface of a semiconductor substrate, and forming a single crystal semiconductor thin film on a surface of the transparent insulating thin film layer. A portion of the single crystal semiconductor thin film is then removed and at least one pixel electrode is formed on the transparent insulating thin film layer at a region where the single crystal semiconductor thin film has been removed. A driving unit is then formed in the single crystal semiconductor thin film. Thereafter, a carrier substrate is laminated using an adhesive on the surface of the semiconductor substrate at a region corresponding to the pixel electrode and the driving unit. The semiconductor substrate is then removed to expose a surface of the transparent insulating thin film layer and through-holes and a metal film are formed on the exposed surface thereof. Thereafter, the metal film is removed to form a light shielding layer for covering at least a portion of a region of the transparent insulating thin film layer occupied by the driving unit and to form an electrode pad for connection to the driving unit through the through-holes. A substrate is then arranged opposite to the transparent insulating thin film to define a gap therebetween, and an electrooptical material is disposed in the gap.
摘要翻译：一种制造光阀装置的方法包括在半导体衬底的表面上形成透明绝缘薄膜层，并在透明绝缘薄膜层的表面上形成单晶半导体薄膜。然后去除单晶半导体薄膜的一部分，并且在去除了单晶半导体薄膜的区域上，在透明绝缘薄膜层上形成至少一个像素电极。然后在单晶半导体薄膜中形成驱动单元。此后，在对应于像素电极和驱动单元的区域，在半导体衬底的表面上使用粘合剂层叠载体衬底。然后去除半导体衬底以暴露透明绝缘薄膜层的表面，并且在其暴露表面上形成通孔和金属膜。此后，去除金属膜以形成遮光层，用于覆盖由驱动单元占据的透明绝缘薄膜层的至少一部分区域，并形成用于通过贯通孔连接到驱动单元的电极焊盘，孔。然后将衬底布置成与透明绝缘薄膜相对以在其间形成间隙，并且在该间隙中设置电光材料。

84. 发明授权

US5618739A Method of making light valve device using semiconductive composite substrate 失效
标题翻译：使用半导体复合基板制造光阀装置的方法
公开(公告)号：US5618739A
公开(公告)日：1997-04-08
申请号：US459834
申请日：1995-06-02
申请人： Kunihiro Takahashi , Yoshikazu Kojima , Hiroaki Takasu , Nobuyoshi Matsuyama , Hitoshi Niwa , Tomoyuki Yoshino , Tsuneo Yamazaki
发明人： Kunihiro Takahashi , Yoshikazu Kojima , Hiroaki Takasu , Nobuyoshi Matsuyama , Hitoshi Niwa , Tomoyuki Yoshino , Tsuneo Yamazaki
IPC分类号： C25F3/04 , G02F1/1335 , G02F1/1362 , H01L21/336 , H01L21/762 , H01L21/77 , H01L21/84
CPC分类号： G02F1/13454 , C25F3/04 , H01L21/76264 , H01L27/1214 , H01L29/66772 , G02F1/133512 , G02F2001/13613 , G02F2202/105 , H01L21/76289 , H01L2221/68363
摘要： A process for manufacturing a semiconductor device comprises forming an SOI substrate by depositing an insulating film of silicon dioxide on a surface of a temporary silicon substrate, thermally bonding a semiconductor substrate of single crystal silicon on a surface of the insulating film, and polishing the semiconductor substrate to form a single crystal semiconductor thin film. A semiconductor integrated circuit is then formed in the single crystal semiconductor thin film. Thereafter, a support substrate is fixedly adhered in face-to-face relation to a surface of the semiconductor integrated circuit opposite to the temporary substrate. The temporary substrate is then removed to expose a surface of the insulating film. The exposed surface of the insulating film is then subjected to a treatment including at least forming an electrode.
摘要翻译：一种制造半导体器件的方法包括：通过在临时硅衬底的表面上沉积二氧化硅绝缘膜来形成SOI衬底，将绝缘膜的表面上的单晶硅的半导体衬底热粘合，并且研磨半导体衬底以形成单晶半导体薄膜。然后在单晶半导体薄膜中形成半导体集成电路。此后，支撑基板以与临时基板相对的半导体集成电路的表面面对面的方式固定地粘接。然后移除临时衬底以暴露绝缘膜的表面。然后对绝缘膜的暴露表面进行至少包括形成电极的处理。

85. 发明授权

US5347154A Light valve device using semiconductive composite substrate 失效
标题翻译：光阀装置采用半导体复合基板
公开(公告)号：US5347154A
公开(公告)日：1994-09-13
申请号：US791912
申请日：1991-11-13
申请人： Kunihiro Takahashi , Yoshikazu Kojima , Hiroaki Takasu , Nobuyoshi Matsuyama , Hitoshi Niwa , Tomoyuki Yoshino , Tsuneo Yamazaki
发明人： Kunihiro Takahashi , Yoshikazu Kojima , Hiroaki Takasu , Nobuyoshi Matsuyama , Hitoshi Niwa , Tomoyuki Yoshino , Tsuneo Yamazaki
IPC分类号： H01L29/78 , G02F1/1335 , G02F1/1362 , H01L21/336 , H01L21/762 , H01L21/77 , H01L21/84 , H01L29/786 , H01L27/01 , H01L27/13
CPC分类号： G02F1/13454 , H01L21/76264 , H01L27/1214 , H01L27/1266 , H01L29/66772 , H01L29/78648 , G02F1/133512 , G02F2001/13613 , G02F2202/105 , H01L21/76289 , H01L2221/68363 , Y10S148/012 , Y10S148/135
摘要： A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate. The multi-layer substrate is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film. A transparent opposite substrate is also formed so that the optical transparency of the electrooptical substance is controlled by the switching elements.
摘要翻译：具有双面布线结构的半导体器件，其中单晶半导体薄膜与晶体管元件整体形成并层压在绝缘薄膜上。单晶半导体薄膜形成有通孔，并且绝缘薄膜在其背面形成有电极和屏蔽膜。还公开了使用该半导体器件的光阀装置。在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。还公开了一种微型高密度光阀装置。在该光阀装置中，在多层基板之间配置有电光物质。多层基板在绝缘膜的相对侧的电极和屏蔽膜上形成有通过绝缘膜形成有分组元件的一侧。还形成透明的相对基板，使得电光物质的光学透明度由开关元件控制。

86. 发明授权

US4540909A Tuning fork type quartz crystal resonator with variable width base 失效
标题翻译：调节叉式石英晶体谐振器，可变宽度底座
公开(公告)号：US4540909A
公开(公告)日：1985-09-10
申请号：US594536
申请日：1984-03-29
申请人： Kunihiro Takahashi , Nobuyoshi Matsuyama
发明人： Kunihiro Takahashi , Nobuyoshi Matsuyama
IPC分类号： H03H9/215 , H01L41/08
CPC分类号： H03H9/215
摘要： A tuning fork type quartz crystal resonator using a coupling between the fundamental flexural and fundamental torsional modes of vibration. The resonator has a base and two tuning fork arms extending from the base. The length of the base is larger than that of the tuning fork arms. The base has a narrow width portion effective to lower the vibrating displacements of the base end according to the torsional mode.
摘要翻译：音叉式石英晶体谐振器，使用基本的弯曲和基本扭转振动模式之间的耦合。谐振器具有从底座延伸的底座和两个音叉臂。基座的长度大于音叉臂的长度。基座具有窄的宽度部分，其有效地根据扭转模式降低基端的振动位移。

87. 发明授权

US4306170A AT-Cut quartz resonator, with w/t=2.0 to 2.8, l/t<25 失效
标题翻译： AT-Cut石英谐振器，w / t = 2.0至2.8，l / t <25
公开(公告)号：US4306170A
公开(公告)日：1981-12-15
申请号：US69932
申请日：1979-08-27
申请人： Shunichi Motte , Naoyuki Echigo , Shiro Yamashita , Tsuneo Kuwabara , Kunihiro Takahashi
发明人： Shunichi Motte , Naoyuki Echigo , Shiro Yamashita , Tsuneo Kuwabara , Kunihiro Takahashi
IPC分类号： G04F5/06 , H03H9/02 , H03H9/19 , H01L41/08
CPC分类号： H03H9/02023 , G04F5/063 , H03H9/02157
摘要： An AT-cut quartz resonator is disclosed, wherein the length l, the width w and the thickness t of the quartz crystal plate are respectively chosen in the directions of an electrical axis (X-axis), an optical axis (Z'-axis) and a mechanical axis (Y'-axis), the width-to-thickness ratio w/t is chosen in the range of 2.0 to 2.8 and the length-to-thickness ratio l/t is chosen less than 25. Consequently, an AT-cut quartz resonator of miniature size having high Q-values of the major mode and excellent frequency-temperature characteristics of the vibration frequency is realized.
摘要翻译：公开了一种AT切割石英谐振器，其中石英晶体板的长度l，宽度w和厚度t分别沿电轴（X轴），光轴（Z'轴））和机械轴（Y'轴），宽/厚比w / t选择在2.0至2.8的范围内，并且长度与厚度之比1 / t选择为小于25.因此，实现了主模具有高Q值和振动频率优异频率特性的微型尺寸的AT切割石英谐振器。

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