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    • 81. 发明授权
    • Fabrication of a semiconductor device having an enhanced well region
    • 具有增强阱区域的半导体器件的制造
    • US08765544B2
    • 2014-07-01
    • US13604207
    • 2012-09-05
    • Akira Ito
    • Akira Ito
    • H01L21/04H01L21/8238H01L29/10H01L29/78H01L29/66H01L29/06H01L29/08
    • H01L29/7835H01L29/0653H01L29/0847H01L29/1045H01L29/105H01L29/66659
    • An apparatus is disclosed to increase a breakdown voltage of a semiconductor device. The semiconductor device includes an enhanced well region to effectively increase a voltage at which punch-through occurs when compared to a conventional semiconductor device. The enhanced well region includes a greater number of excess carriers when compared to a well region of the conventional semiconductor device. These larger number of excess carriers attract more carriers allowing more current to flow through a channel region of the semiconductor device before depleting the enhanced well region of the carriers. As a result, the semiconductor device may accommodate a greater voltage being applied to its drain region before the depletion region of the enhanced well region and a depletion region of a well region surrounding the drain region merge into a single depletion region.
    • 公开了一种用于增加半导体器件的击穿电压的装置。 半导体器件包括增强的阱区域,以便与传统的半导体器件相比有效地增加穿通的电压。 当与常规半导体器件的阱区相比时,增强阱区包括更多数量的过量载流子。 这些更大数量的过量载流子吸引更多的载流子,允许更多的电流流过半导体器件的沟道区域,然后消耗载流子的增强阱区域。 结果,半导体器件可以容纳在增强阱区的耗尽区之前施加到其漏极区的更大的电压,并且围绕漏极区的阱区的耗尽区合并成单个耗尽区。
    • 83. 发明授权
    • Receiving apparatus and receiving method
    • 接收装置和接收方法
    • US08619893B2
    • 2013-12-31
    • US13019748
    • 2011-02-02
    • Akira Ito
    • Akira Ito
    • H04L27/28H04L5/12H04L23/02
    • H04L27/38H04L25/0242H04L25/0244H04L25/0246H04L25/061H04L25/067
    • A receiving apparatus includes an inverse matrix multiplying portion which multiplies first and second receiving signal points corresponding to first and second receiving signals by an inverse matrix of a channel matrix based on known signals included in the first and second receiving signals, a first arithmetic portion which determines one or more first sending signal candidate points based on the multiplied first receiving signal points, a second arithmetic portion which determines one or more second sending signal candidate points based on the multiplied second receiving signal points, a determining portion which determines first and second sending signal points, corresponding to first and second sending signals from among the first and second sending signal candidate points so that a total distance based on at least a first distance regarding the first sending signal candidate point and a second distance regarding the second sending signal candidate point satisfies a given condition.
    • 一种接收装置,包括:逆矩阵乘法部,其基于包含在第一和第二接收信号中的已知信号,将与第一和第二接收信号相对应的第一和第二接收信号点乘以信道矩阵的逆矩阵;第一算术部分, 基于相乘的第一接收信号点确定一个或多个第一发送信号候选点;第二运算部,其基于相乘的第二接收信号点确定一个或多个第二发送信号候选点;确定部,确定第一和第二发送 信号点,对应于来自第一和第二发送信号候选点的第一和第二发送信号,使得基于关于第一发送信号候选点的至少第一距离和关于第二发送信号候选点的第二距离的总距离 满足给定条件 n。
    • 89. 发明授权
    • Programmable fuse
    • 可编程保险丝
    • US08455977B2
    • 2013-06-04
    • US13466986
    • 2012-05-08
    • Wei XiaXiangdong ChenAkira Ito
    • Wei XiaXiangdong ChenAkira Ito
    • H01L29/00
    • H01L23/5256H01L2924/0002H01L2924/00
    • According to one exemplary embodiment, a method for forming a one-time programmable metal fuse structure includes forming a metal fuse structure over a substrate, the metal fuse structure including a gate metal segment situated between a dielectric segment and a polysilicon segment, a gate metal fuse being formed in a portion of the gate metal segment. The method further includes doping the polysilicon segment so as to form first and second doped polysilicon portions separated by an undoped polysilicon portion where, in one embodiment, the gate metal fuse is substantially co-extensive with the undoped polysilicon portion. The method can further include forming a first silicide segment on the first doped polysilicon portion and a second silicide segment on the second doped polysilicon portion, where the first and second silicide segments form respective terminals of the one-time programmable metal fuse structure.
    • 根据一个示例性实施例,一种用于形成一次性可编程金属熔丝结构的方法包括在衬底上形成金属熔丝结构,所述金属熔丝结构包括位于介电段和多晶硅段之间的栅极金属段,栅极金属 熔丝形成在栅极金属段的一部分中。 该方法还包括掺杂多晶硅段以便形成由未掺杂多晶硅部分分开的第一和第二掺杂多晶硅部分,其中在一个实施例中,栅极金属熔丝与未掺杂的多晶硅部分基本上共同延伸。 该方法还可以包括在第一掺杂多晶硅部分上形成第一硅化物部分和在第二掺杂多晶硅部分上形成第二硅化物部分,其中第一和第二硅化物部分形成一次性可编程金属熔丝结构的相应端子。