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    • 81. 发明授权
    • Semiconductor light emitting component and method for manufacturing the same
    • 半导体发光元件及其制造方法
    • US08476663B2
    • 2013-07-02
    • US13102350
    • 2011-05-06
    • Ray-Hua HorngYi-An Lu
    • Ray-Hua HorngYi-An Lu
    • H01L33/00
    • H01L33/60H01L27/153H01L33/0079H01L33/20H01L33/22H01L33/38H01L33/405H01L33/46
    • A method for manufacturing a semiconductor light emitting component is disclosed in the present invention. First, a substrate is provided and an epitaxial structure is formed thereon, wherein a first surface of the epitaxial structure contacts the substrate. The epitaxial structure includes a first type doped layer, a light emitting portion and a second type doped layer. A first electrode is then formed on a second surface of the first type doped layer. Subsequently, a functional structure is formed on the first electrode using an in-situ method. Afterwards, the substrate is removed to expose the epitaxial structure. Finally, an etching step is performed to etch the exposed epitaxial structure, so as to expose at least a portion of the first electrode.
    • 在本发明中公开了半导体发光元件的制造方法。 首先,提供衬底并且在其上形成外延结构,其中外延结构的第一表面接触衬底。 外延结构包括第一类型掺杂层,发光部分和第二类型掺杂层。 然后在第一类型掺杂层的第二表面上形成第一电极。 随后,使用原位法在第一电极上形成功能结构。 之后,去除衬底以露出外延结构。 最后,执行蚀刻步骤以蚀刻暴露的外延结构,以暴露第一电极的至少一部分。
    • 84. 发明授权
    • Multi-layered LED epitaxial structure with light emitting unit
    • 具有发光单元的多层LED外延结构
    • US08178886B2
    • 2012-05-15
    • US12980964
    • 2010-12-29
    • Ray-Hua Horng
    • Ray-Hua Horng
    • H01L33/60
    • H01L27/153H01L33/0079H01L33/22H01L33/62H01L2924/0002H01L2933/0016H01L2933/0066H01L2924/00
    • A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the first surface of the light emitting unit; and (g) removing a portion of the light emitting unit from the first surface, to expose at least one of the n-electrode and the p-electrode.
    • 一种制造半导体发光器件的方法包括:(a)提供临时衬底; (b)在所述临时衬底上形成具有至少一个发光单元的多层LED外延结构,其中所述发光单元的第一表面接触所述临时衬底,并且所述发光单元包括n型层 ,有源区和p型层; (c)在n型层上形成n电极; (d)在p型层上形成p电极; (e)在发光单元,n电极和p电极上键合永久性基板; (f)去除所述临时衬底以露出所述发光单元的所述第一表面; 以及(g)从所述第一表面去除所述发光单元的一部分,以暴露所述n电极和所述p电极中的至少一个。
    • 85. 发明申请
    • Semiconductor Light Emitting Device and Method for Manufacturing the Same
    • 半导体发光器件及其制造方法
    • US20120001202A1
    • 2012-01-05
    • US12980964
    • 2010-12-29
    • Ray-Hua Horng
    • Ray-Hua Horng
    • H01L33/60
    • H01L27/153H01L33/0079H01L33/22H01L33/62H01L2924/0002H01L2933/0016H01L2933/0066H01L2924/00
    • A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the first surface of the light emitting unit; and (g) removing a portion of the light emitting unit from the first surface, to expose at least one of the n-electrode and the p-electrode.
    • 一种制造半导体发光器件的方法包括:(a)提供临时衬底; (b)在所述临时衬底上形成具有至少一个发光单元的多层LED外延结构,其中所述发光单元的第一表面接触所述临时衬底,并且所述发光单元包括n型层 ,有源区和p型层; (c)在n型层上形成n电极; (d)在p型层上形成p电极; (e)在发光单元,n电极和p电极上键合永久性基板; (f)去除所述临时衬底以露出所述发光单元的所述第一表面; 以及(g)从所述第一表面去除所述发光单元的一部分,以暴露所述n电极和所述p电极中的至少一个。
    • 88. 发明授权
    • Method for making condenser microphones
    • 制作电容麦克风的方法
    • US07343661B2
    • 2008-03-18
    • US11409615
    • 2006-04-24
    • Ray-Hua HorngZong-Ying LinJean-Yih TsaiChao-Chih Chang
    • Ray-Hua HorngZong-Ying LinJean-Yih TsaiChao-Chih Chang
    • H04R31/00
    • H04R19/005H04R19/04H04R31/003Y10T29/42Y10T29/435Y10T29/49005Y10T29/49007Y10T29/4908
    • A method for making condenser microphones includes: forming a fixed electrode layer structure of a plurality of fixed electrode units; forming a sacrificial layer of a plurality of sacrificial units on one side of the fixed electrode layer structure; forming a diaphragm layer structure of a plurality of diaphragm units on the sacrificial layer; forming a patterned mask layer on an opposite side of the fixed electrode layer structure opposite to the sacrificial layer; forming a plurality of etching channels, each of which extends through the patterned mask layer and the fixed electrode layer structure; removing a portion of the sacrificial layer of each of the sacrificial units so as to form a spacer between a respective one of the fixed electrode units and a respective one of the diaphragm units; and removing the patterned mask layer.
    • 一种制造电容式麦克风的方法包括:形成多个固定电极单元的固定电极层结构; 在所述固定电极层结构的一侧上形成多个牺牲单元的牺牲层; 在牺牲层上形成多个膜片单元的隔膜层结构; 在与牺牲层相对的固定电极层结构的相对侧上形成图案化掩模层; 形成多个蚀刻通道,每个蚀刻通道延伸通过图案化掩模层和固定电极层结构; 去除每个牺牲单元的牺牲层的一部分,以便在固定电极单元中的相应一个和相应的一个隔膜单元之间形成间隔物; 并去除图案化掩模层。