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    • 81. 发明申请
    • ION IMPLANTATION ION SOURCE, SYSTEM AND METHOD
    • US20070278417A1
    • 2007-12-06
    • US11778272
    • 2007-07-16
    • Thomas HorskyJohn Williams
    • Thomas HorskyJohn Williams
    • H01J27/00
    • H01J27/205H01J37/08H01J37/3171H01J2237/006H01J2237/049H01J2237/063H01J2237/082H01J2237/31701H01J2237/31703H01J2237/31705
    • Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large fraction of B10Hx+; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx+; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.
    • 82. 发明申请
    • Ion implantation ion source, system and method
    • US20070262262A1
    • 2007-11-15
    • US11647924
    • 2006-12-29
    • Thomas HorskyJohn Williams
    • Thomas HorskyJohn Williams
    • H01J3/14
    • H01J37/3171C23C14/48H01J27/205H01J37/08H01J2237/047H01J2237/049H01J2237/063H01J2237/0812H01J2237/0815H01J2237/082H01J2237/083H01J2237/0835H01J2237/31701H01J2237/31703H01J2237/31705H01L21/26513H01L21/2658H01L21/823814
    • Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large faction of B10Hx+; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx+; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.
    • 85. 发明申请
    • HIGH TENSION CABLE TO METAL BEAM GUIDE FENCE TRANSITION
    • 高张力电缆到金属光束指导过渡
    • US20060243954A1
    • 2006-11-02
    • US11381155
    • 2006-05-02
    • John Williams
    • John Williams
    • E01F15/00
    • E01F15/06E01F15/0423
    • Disclosed is an apparatus for preventing a collision between a vehicle and an end of a Metal Beam Guide Fence. A transition device is attached to a modified section of the Metal Beam Guide Fence. The transition device and modified section are configured to allow passage of cables of a High Tension Cable Barrier through the Metal Beam Guide Fence and the transition device. The High Tension Cable Barrier redirects the colliding vehicle away from the end of the Metal Beam Guide Fence. The transition device and modified section are also configured to interact with the cables of the High Tension Cable Barrier to transfer and spread the collision load from the high tension cables to the Metal Beam Guide Fence.
    • 公开了一种用于防止车辆与金属梁导向栅栏的端部之间的碰撞的装置。 过渡装置连接到金属梁导向栅栏的修改部分。 过渡装置和修改部分被配置为允许高张力电缆屏障的电缆通过金属梁导向栅栏和过渡装置。 高张力电缆屏障将碰撞的车辆重新导向远离金属梁导轨栅栏的末端。 过渡装置和修改部分还被配置为与高张力电缆屏障的电缆相互作用,以将碰撞载荷从高压电缆传送并传播到金属梁导向栅栏。
    • 87. 发明申请
    • Multi-threaded packeting processing architecture
    • 多线程打包处理架构
    • US20060179156A1
    • 2006-08-10
    • US11054076
    • 2005-02-08
    • Will EathertonEarl CohenJohn FingerhutDonald SteissJohn Williams
    • Will EathertonEarl CohenJohn FingerhutDonald SteissJohn Williams
    • G06F15/173
    • H04L47/56H04L45/60H04L47/50
    • A network processor has numerous novel features including a multi-threaded processor array, a multi-pass processing model, and Global Packet Memory (GPM) with hardware managed packet storage. These unique features allow the network processor to perform high-touch packet processing at high data rates. The packet processor can also be coded using a stack-based high-level programming language, such as C or C++. This allows quicker and higher quality porting of software features into the network processor. Processor performance also does not severely drop off when additional processing features are added. For example, packets can be more intelligently processed by assigning processing elements to different bounded duration arrival processing tasks and variable duration main processing tasks. A recirculation path moves packets between the different arrival and main processing tasks. Other novel hardware features include a hardware architecture that efficiently intermixes co-processor operations with multi-threaded processing operations and improved cache affinity.
    • 网络处理器具有许多新颖的特征,包括多线程处理器阵列,多遍处理模型和具有硬件管理分组存储的全局分组存储器(GPM)。 这些独特的功能允许网络处理器以高数据速率执行高触摸包处理。 分组处理器也可以使用基于堆栈的高级编程语言(例如C或C ++)进行编码。 这样可以更快速地将软件功能移植到网络处理器中。 当添加额外的处理功能时,处理器性能也不会严重下降。 例如,可以通过将处理元素分配给不同的有界持续时间到达处理任务和可变持续时间主处理任务来更智能地处理分组。 再循环路径在不同的到达和主要处理任务之间移动分组。 其他新颖的硬件功能包括硬件架构,可以将协处理器操作与多线程处理操作高效地混合,并提高缓存关联度。