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81. 发明授权

US07582542B2 Die attaching method 失效
标题翻译：贴片方法
公开(公告)号：US07582542B2
公开(公告)日：2009-09-01
申请号：US11552416
申请日：2006-10-24
申请人： Dae-Young Kim , Joung-Min Oh
发明人： Dae-Young Kim , Joung-Min Oh
IPC分类号： H01L21/00
CPC分类号： H01L21/6836 , H01L23/544 , H01L24/83 , H01L2221/68327 , H01L2223/54406 , H01L2223/54466 , H01L2224/83801 , H01L2924/14 , H01L2924/00
摘要： A die attaching method for attaching semiconductor dies on wafers, each wafer having a first center point and a first radius may include expanding a wafer carrier tape so that the wafer has a second center point and a second radius, measuring the second center point and second radius of the wafer, adding the difference between the first radius and the second radius to a first coordinate value of a first die to calculate a second coordinate value of the first die, and picking up and attaching the semiconductor dies consecutively from the first die. Calculating the second coordinate value of the first die may include compensating the first center point of the wafer based on the second center point of the wafer to calculate the positional coordinate of the semiconductor dies including the first die.
摘要翻译：一种用于将半导体管芯附着在晶片上的管芯安装方法，具有第一中心点和第一半径的每个晶片可以包括扩大晶片载带，使得晶片具有第二中心点和第二半径，测量第二中心点和第二半径将第一半径和第二半径之间的差加至第一模具的第一坐标值，以计算第一模具的第二坐标值，并从第一模具连续拾取并附接半导体模具。计算第一管芯的第二坐标值可以包括基于晶片的第二中心点补偿晶片的第一中心点，以计算包括第一管芯的半导体管芯的位置坐标。

82. 发明申请

US20090065806A1 MOS TRANSISTOR AND FABRICATION METHOD THEREOF 审中-公开
标题翻译： MOS晶体管及其制造方法
公开(公告)号：US20090065806A1
公开(公告)日：2009-03-12
申请号：US12197268
申请日：2008-08-24
申请人： Dae-Young Kim
发明人： Dae-Young Kim
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823814 , H01L27/092 , H01L29/7843 , H01L29/7848
摘要： A MOS transistor and a fabrication method thereof are disclosed. The mobility of electrons or holes serving as charge carriers of the MOS transistor can be improved by forming a lattice stress-causing material in source/drain regions of a MOS transistor or by forming a gapping layer having a tensile stress in the MOS transistor. As a result, a driving current of the MOS transistor may be reduced.
摘要翻译：公开了MOS晶体管及其制造方法。通过在MOS晶体管的源极/漏极区域中形成晶格应力导致材料，或者通过在MOS晶体管中形成具有拉伸应力的间隙层，可以提高用作MOS晶体管的电荷载流子的电子或空穴的迁移率。结果，可以降低MOS晶体管的驱动电流。

83. 发明申请

US20080296742A1 SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080296742A1
公开(公告)日：2008-12-04
申请号：US12131072
申请日：2008-05-31
申请人： Dae-Young Kim
发明人： Dae-Young Kim
IPC分类号： H01L29/423 , H01L21/28
CPC分类号： H01L29/4234 , H01L29/40117
摘要： A semiconductor device having silicon-oxide-nitride-oxide-silicon (SONOS) structure that overcomes spatial limitations which trap charges by not utilizing a flat, planar structure of the ONO film including a charging trap layer, thereby making it possible to improve reliability for data preserving characteristic of a SONOS device.
摘要翻译：一种具有氧化硅 - 氮化物 - 氧化物 - 硅（SONOS）结构的半导体器件，其克服了通过不利用包含充电陷阱层的ONO膜的平坦的平面结构来捕获电荷的空间限制，由此使得可以提高 SONOS设备的数据保存特性。

84. 发明申请

US20080157132A1 METHOD FOR FORMING THE GATE OF A TRANSISTOR 审中-公开
标题翻译：形成晶体管栅极的方法
公开(公告)号：US20080157132A1
公开(公告)日：2008-07-03
申请号：US11953571
申请日：2007-12-10
申请人： Dae-Young Kim
发明人： Dae-Young Kim
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L21/3086 , H01L21/306 , H01L29/1037 , H01L29/4236 , H01L29/66613
摘要： A method of forming a gate of a transistor can include forming a nitride film over a semiconductor substrate; forming a photoresist pattern defining a gate channel region of a transistor over the nitride film; forming a nitride pattern by etching the nitride film using the photoresist pattern as a mask; removing the photoresist pattern; forming an oxide film over the semiconductor substrate using a thermal oxidation process; removing the nitride pattern to expose a portion of the surface of the semiconductor substrate corresponding to the removed nitride pattern; and then forming a recessed pattern corresponding to the gate channel region in the exposed semiconductor substrate.
摘要翻译：形成晶体管的栅极的方法可以包括在半导体衬底上形成氮化物膜; 形成限定所述氮化物膜上的晶体管的栅极沟道区的光致抗蚀剂图案; 通过使用光致抗蚀剂图案作为掩模蚀刻氮化物膜来形成氮化物图案; 去除光致抗蚀剂图案; 使用热氧化工艺在半导体衬底上形成氧化膜; 去除氮化物图案以暴露对应于去除的氮化物图案的半导体衬底的表面的一部分; 然后在暴露的半导体衬底中形成对应于栅极沟道区的凹陷图案。

85. 发明授权

US06711144B1 Multi-user communication of voice and data 有权
标题翻译：语音和数据的多用户通信
公开(公告)号：US06711144B1
公开(公告)日：2004-03-23
申请号：US09663498
申请日：2000-09-15
申请人： Dae-Young Kim , M. Vedat Eyuboglu , Pierre A. Humblet
发明人： Dae-Young Kim , M. Vedat Eyuboglu , Pierre A. Humblet
IPC分类号： H04B7216
CPC分类号： H04W74/04 , H04B7/2618 , H04J9/00 , H04J13/0048 , H04J13/18 , H04L5/026 , H04L5/22 , H04W52/281 , H04W72/044
摘要： Data is sent in some time slots of a forward link from a base station to at least one remote station in a wireless communication system, and voice information is sent from the base station to the at least one remote station in some other time slots of the forward link, the data being sent in a time division multiple access (TDMA) mode, the voice data being sent in a code division multiple access (CDMA) mode.
摘要翻译：在无线通信系统中从基站到至少一个远程站的前向链路的一些时隙中发送数据，并且语音信息在基站的某些其他时隙中从基站发送到至少一个远程站前向链路，数据以时分多址（TDMA）模式发送，语音数据以码分多址（CDMA）模式发送。

86. 发明授权

US06456651B1 Method and apparatus for adjustment of the sampling phase in a PCM modem system using a dual-phase probing signal 有权
标题翻译：使用双相探测信号调制PCM调制解调器系统中采样相位的方法和装置
公开(公告)号：US06456651B1
公开(公告)日：2002-09-24
申请号：US09498822
申请日：2000-02-04
申请人： John Pilozzi , Sepehr Mehrabanzad , Dae-Young Kim , William Leslie Brown
发明人： John Pilozzi , Sepehr Mehrabanzad , Dae-Young Kim , William Leslie Brown
IPC分类号： H04B138
CPC分类号： H04L7/0091 , H04J3/0682 , H04L7/0029
摘要： In a PCM modem system, a method and apparatus for optimizing the fractional sampling phase offset in the upstream direction to maximize the upstream data rate utilizes a probing signal from the analog modem generated during startup and having at least two distinct phases of a pure tone, with the probing signal being detected at the digital modem where an optimum sampling phase value is calculated. From this calculated value, a signal representing the appropriate amount to delay the input data stream is transmitted back to the analog modem for adjustment of the fractional sampling phase so that the fractional sampling phase offset at the central office quantizer is optimized.
摘要翻译：在PCM调制解调器系统中，用于优化上游方向上的分数采样相位偏移以最大化上行数据速率的方法和装置利用来自在启动期间产生的模拟调制解调器的探测信号，并具有纯音的至少两个不同相位，其中在数字调制解调器处检测到探测信号，其中计算出最佳采样相位值。从该计算值，将表示用于延迟输入数据流的适当量的信号发送回模拟调制解调器以调整分数采样相位，使得在中心局量化器处的分数采样相位偏移被优化。

87. 发明授权

US06201836B1 Method and apparatus for combining a Trellis coding scheme with a pre-coding scheme for data signals 有权
标题翻译：用于将网格编码方案与用于数据信号的预编码方案组合的方法和装置
公开(公告)号：US06201836B1
公开(公告)日：2001-03-13
申请号：US09234451
申请日：1999-01-20
申请人： Dae-Young Kim
发明人： Dae-Young Kim
IPC分类号： H04L512
CPC分类号： H04L1/006 , H04L25/4927
摘要： A system (180) receives input bits from a user. From the input bits, an equivalence class is defined which has at least one constellation point. One of the constellation points in the equivalence class is chosen to represent an output of a channel. A redundancy bit is calculated from the output of the channel and is used to define a next equivalence class for the system (180).
摘要翻译：系统（180）从用户接收输入比特。从输入位，定义一个具有至少一个星座点的等价类。选择等价类中的一个星座点来表示通道的输出。从通道的输出计算冗余位，并用于定义系统的下一个等价类（180）。

88. 发明授权

US5962267A Proinsulin derivative and process for producing human insulin 失效
标题翻译：胰岛素原衍生物及其制备人胰岛素的方法
公开(公告)号：US5962267A
公开(公告)日：1999-10-05
申请号：US600783
申请日：1996-02-13
申请人： Hang-Cheol Shin , Seung-Gu Chang , Dae-Young Kim , Chong-Suhl Kim
发明人： Hang-Cheol Shin , Seung-Gu Chang , Dae-Young Kim , Chong-Suhl Kim
IPC分类号： C12N15/09 , A61K38/00 , A61K38/28 , C07H21/04 , C07K14/575 , C07K14/62 , C12N1/21 , C12N15/17 , C12P21/02 , C12R1/19 , C12N15/63
CPC分类号： C07K14/62 , A61K38/00 , C07K2319/00
摘要： A process for preparing human insulin, which comprises the steps of: preparing a DNA encoding a human proinsulin derivative having the following formula (I); inserting the DNA into a vector to construct an expression vector for the expression of the human proinsulin derivative; transforming a host cell with the expression vector; culturing the resulting transformant under a condition that allows the expression of the human proinsulin derivative; purifying human proinsulin derivative from the culture; and preparing human insulin from the human proinsulin derivative by an enzymatic hydrolysis:B chain-Z-A chain (I)Wherein,said A and B chains are respectively human insulin chains;Z is a peptide of formula U-U-X-P-J-(X')n-U-U;U is an arginine or lysin residue;X and X' are independently any amino acid residue;P is a proline residue;J is a glycine, arginine or lysine residue; andn is 0 or an integer of 1 to 5.
摘要翻译：一种制备人胰岛素的方法，其包括以下步骤：制备编码具有下式（I）的人胰岛素原衍生物的DNA; 将DNA插入载体以构建用于表达人胰岛素原衍生物的表达载体; 用表达载体转化宿主细胞; 在允许人胰岛素原衍生物表达的条件下培养所得转化体; 从培养物中纯化人胰岛素原衍生物; 并通过酶水解从人胰岛素原衍生物制备人胰岛素：B链-Z-A链（I）其中所述A和B链分别是人胰岛素链; Z是式U-U-X-P-J-（X'）n-U-U的肽; U是精氨酸或赖氨酸残基; X和X'独立地是任何氨基酸残基; P是脯氨酸残基; J是甘氨酸，精氨酸或赖氨酸残基; n为0或1〜5的整数。

89. 外观设计

USD806061S1 Case for electronic devices 有权
公开(公告)号：USD806061S1
公开(公告)日：2017-12-26
申请号：US29575360
申请日：2016-08-24
申请人： Dae-Young Kim , Soo Ha Jung
设计人： Dae-Young Kim , Soo Ha Jung

90. 外观设计

USD801325S1 Case for electronic communications device 有权
公开(公告)号：USD801325S1
公开(公告)日：2017-10-31
申请号：US29546692
申请日：2015-11-24
申请人： Dae-Young Kim
设计人： Dae-Young Kim

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