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81. 发明申请

US20130015455A1 GERMANIUM-CONTAINING RELEASE LAYER FOR TRANSFER OF A SILICON LAYER TO A SUBSTRATE 有权
标题翻译：用于将硅层转移到基板的含锗包装层
公开(公告)号：US20130015455A1
公开(公告)日：2013-01-17
申请号：US13616322
申请日：2012-09-14
申请人： Stephen W. Bedell , Keith E. Fogel , Daniel A. Inns , Jeehwan Kim , Davendra k. Sadana , Katherine L. Saenger
发明人： Stephen W. Bedell , Keith E. Fogel , Daniel A. Inns , Jeehwan Kim , Davendra k. Sadana , Katherine L. Saenger
IPC分类号： H01L29/38
CPC分类号： H01L21/0262 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02664 , H01L21/76254
摘要： A germanium-containing layer is deposited on a single crystalline bulk silicon substrate in an ambient including a level of oxygen partial pressure sufficient to incorporate 1%-50% of oxygen in atomic concentration. The thickness of the germanium-containing layer is preferably limited to maintain some degree of epitaxial alignment with the underlying silicon substrate. Optionally, a graded germanium-containing layer can be grown on, or replace, the germanium-containing layer. An at least partially crystalline silicon layer is subsequently deposited on the germanium-containing layer. A handle substrate is bonded to the at least partially crystalline silicon layer. The assembly of the bulk silicon substrate, the germanium-containing layer, the at least partially crystalline silicon layer, and the handle substrate is cleaved within the germanium-containing layer to provide a composite substrate including the handle substrate and the at least partially crystalline silicon layer. Any remaining germanium-containing layer on the composite substrate is removed.
摘要翻译：含锗层沉积在单一晶体体硅衬底上，包括足以以原子浓度掺入1％-50％的氧的氧分压水平。含锗层的厚度优选被限制以保持与底层硅衬底的一定程度的外延对准。任选地，可以在含锗层上生长或替代含锗层。随后将至少部分结晶的硅层沉积在含锗层上。手柄基板结合到至少部分结晶的硅层。本体硅衬底，含锗层，至少部分结晶的硅层和处理衬底的组件在含锗层内被切割以提供复合衬底，该复合衬底包括处理衬底和至少部分结晶的硅层。去除复合衬底上任何剩余的含锗层。

82. 发明授权

US07754008B2 Method of forming dislocation-free strained thin films 失效
标题翻译：形成无位错应变薄膜的方法
公开(公告)号：US07754008B2
公开(公告)日：2010-07-13
申请号：US11458628
申请日：2006-07-19
申请人： Ya-Hong Xie , Jeehwan Kim
发明人： Ya-Hong Xie , Jeehwan Kim
IPC分类号： H01L21/324
CPC分类号： C30B29/06 , H01L21/02532 , H01L21/02694 , H01L21/76254
摘要： A method of forming a stressed thin film on a substrate includes forming a plurality of islands on a viscous layer that is present on a surface of a substrate. Adjacent islands are bridged with a stressor layer. The structure is annealed at an elevated temperature above the glass flow temperature of the viscous layer to transfer at least a portion of the stress from the stressor layer to the underlying islands. The bridges are then removed to expose the stressed islands of thin film on the substrate.
摘要翻译：在衬底上形成应力薄膜的方法包括在存在于衬底的表面上的粘性层上形成多个岛。邻近的岛屿与应激源层桥接。该结构在高于粘性层的玻璃流动温度的高温下退火，以将至少一部分应力从应力层转移到下面的岛。然后去除桥接以暴露衬底上的应力薄膜薄膜。

83. 发明申请

US20070111468A1 METHOD FOR FABRICATING DISLOCATION-FREE STRESSED THIN FILMS 审中-公开
标题翻译：用于制备无分裂应力薄膜的方法
公开(公告)号：US20070111468A1
公开(公告)日：2007-05-17
申请号：US11458641
申请日：2006-07-19
申请人： Ya-Hong Xie , Jeehwan Kim
发明人： Ya-Hong Xie , Jeehwan Kim
IPC分类号： H01L21/76
CPC分类号： H01L21/76256
摘要： A method of forming a stressed thin film on a substrate includes the steps of depositing a thin film of silicon on a first substrate and transforming the first substrate into a porous substrate. The porous substrate containing the thin film of silicon is then transformed into a stressed state such that at least a portion of the stress is transferred to the thin film. The thin film may be under compressive stress or tensile stress. For example, volumetric expansion of the porous substrate imparts tensile stress to the thin film while volumetric contraction of the porous substrate imparts compressive stress to the thin film. The porous substrate containing the stressed thin film of silicon is then bonded to a second substrate. The porous substrate is removed so as to deposit the stressed thin film of silicon to the second substrate.
摘要翻译：在衬底上形成应力薄膜的方法包括以下步骤：在第一衬底上沉积硅薄膜并将第一衬底转化成多孔衬底。然后将含有硅薄膜的多孔基材转变成应力状态，使至少一部分应力转移到薄膜上。薄膜可能处于压应力或拉伸应力下。例如，多孔基材的体积膨胀赋予薄膜拉伸应力，而多孔基材的体积收缩赋予薄膜压缩应力。然后将含有应力薄膜的多孔基材接合到第二基板上。去除多孔基底以将应力薄的硅沉积到第二基底上。

84. 发明申请

US20070017438A1 METHOD OF FORMING DISLOCATION-FREE STRAINED THIN FILMS 失效
标题翻译：形成无离子应变薄膜的方法
公开(公告)号：US20070017438A1
公开(公告)日：2007-01-25
申请号：US11458628
申请日：2006-07-19
申请人： Ya-Hong Xie , Jeehwan Kim
发明人： Ya-Hong Xie , Jeehwan Kim
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/06 , H01L21/02532 , H01L21/02694 , H01L21/76254
摘要： A method of forming a stressed thin film on a substrate includes forming a plurality of islands on a viscous layer that is present on a surface of a substrate. Adjacent islands are bridged with a stressor layer. The structure is annealed at an elevated temperature above the glass flow temperature of the viscous layer to transfer at least a portion of the stress from the stressor layer to the underlying islands. The bridges are then removed to expose the stressed islands of thin film on the substrate.
摘要翻译：在衬底上形成应力薄膜的方法包括在存在于衬底的表面上的粘性层上形成多个岛。邻近的岛屿与应激源层桥接。该结构在高于粘性层的玻璃流动温度的高温下退火，以将至少一部分应力从应力层转移到下面的岛。然后去除桥接以暴露衬底上的应力薄膜薄膜。

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