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    • 86. 发明授权
    • Thin film transistor, array substrate and manufacturing method thereof, and display device
    • 薄膜晶体管,阵列基板及其制造方法以及显示装置
    • US09391207B2
    • 2016-07-12
    • US14422213
    • 2014-06-12
    • BOE TECHNOLOGY GROUP CO., LTD.
    • Tao GaoWeifeng Zhou
    • H01L21/336H01L29/10H01L29/786H01L29/66H01L27/12
    • H01L29/786H01L27/1222H01L27/1255H01L27/1288H01L29/6675H01L29/66757H01L29/78675
    • The present invention provides a low-temperature polysilicon thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device. The present invention is related to display technology. The low-temperature polysilicon thin film transistor comprises: an active layer disposed on a substrate, and a source electrode and a drain electrode respectively connected to the active layer, the active layer comprises a source contact region, a drain contact region, and a semiconductor region disposed between the source contact region and the drain contact region, the source contact region and the drain contact region are both conductive, both of the source contact region and the drain contact region include a semiconductor substrate and ions distributed in the semiconductor substrate, the source electrode covers the source contact region directly, and the drain electrode covers the drain contact region directly.
    • 本发明提供一种低温多晶硅薄膜晶体管及其制造方法,阵列基板及其制造方法以及显示装置。 本发明涉及显示技术。 低温多晶硅薄膜晶体管包括:设置在基板上的有源层和分别连接到有源层的源电极和漏电极,有源层包括源极接触区域,漏极接触区域和半导体 设置在源极接触区域和漏极接触区域之间的区域,源极接触区域和漏极接触区域都是导电的,源极接触区域和漏极接触区域都包括半导体衬底和分布在半导体衬底中的离子, 源电极直接覆盖源极接触区域,漏电极直接覆盖漏极接触区域。