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81. 发明申请

US20120244255A1 METHOD FOR PRODUCING PURIFIED TEA EXTRACT 审中-公开
标题翻译：生产纯化茶叶提取物的方法
公开(公告)号：US20120244255A1
公开(公告)日：2012-09-27
申请号：US13514828
申请日：2010-12-08
申请人： Kenichi Shikata , Hitoshi Sato
发明人： Kenichi Shikata , Hitoshi Sato
IPC分类号： A23F3/16
CPC分类号： A23F3/205
摘要： Provided is a method for producing a purified tea extract, which can satisfy both the yield of the non-polymer catechins and the removal rate of gallic acid at high levels. The method is characterized in that a tea extract, which contains an aqueous solution of an organic solvent, brought into contact with an anion exchange resin.
摘要翻译：本发明提供了能够同时满足非聚合型儿茶素类的收率和高水平的没食子酸的去除率的纯化茶提取物的制造方法。该方法的特征在于，含有有机溶剂的水溶液的茶提取物与阴离子交换树脂接触。

82. 发明授权

US08263424B2 Opto-electronic and electronic devices using an N-face or M-plane gallium nitride substrate prepared via ammonothermal growth 有权
标题翻译：使用通过氨热生长制备的N面或M面氮化镓衬底的光电子和电子器件
公开(公告)号：US08263424B2
公开(公告)日：2012-09-11
申请号：US12792615
申请日：2010-06-02
申请人： Tadao Hashimoto , Hitoshi Sato , Shuji Nakamura
发明人： Tadao Hashimoto , Hitoshi Sato , Shuji Nakamura
IPC分类号： H01L21/00 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L29/045 , C30B7/10 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L29/2003 , H01L33/16 , Y10S438/973 , Y10T117/1064
摘要： A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.
摘要翻译：使用氨热生长技术生长具有N面或M面的III-V族氮化物膜的方法。该方法包括使用高压釜，加热高压釜，并将氨引入高压釜中以产生平滑的N面或M面氮化镓镓膜和体GaN。

83. 发明申请

US20120121761A1 METHOD FOR PRODUCTION OF TEA EXTRACT 审中-公开
标题翻译：生产茶叶提取方法
公开(公告)号：US20120121761A1
公开(公告)日：2012-05-17
申请号：US12672302
申请日：2008-08-07
申请人： Masahiro Fukuda , Eri Itaya , Hirokazu Takahashi , Miwa Ogasawara , Hitoshi Sato , Kenichi Shikata , Keiji Shibata
发明人： Masahiro Fukuda , Eri Itaya , Hirokazu Takahashi , Miwa Ogasawara , Hitoshi Sato , Kenichi Shikata , Keiji Shibata
IPC分类号： A23F3/22 , A23F3/16
CPC分类号： A23F3/163 , A23F3/18 , A23F3/20
摘要： This invention relates to a process for producing a tea extract. The process includes subjecting a first tea extract solution, which has been obtained from tea, to solid-liquid separation so that a turbidity becomes 200 NTU or lower when a concentration of non-polymer catechins is adjusted to 1 wt %, thereby obtaining a second tea extract solution in which a concentration of (A) non-polymer catechins is from 0.2 to 5 wt % and a concentration of non-polymer catechins in solid content is from 15 to 80 wt %; and then subjecting the second tea extract solution to a heat treatment at a temperature of from 95 to 140° C. for an F value of from 0.05 to 40 min.
摘要翻译：本发明涉及茶提取物的制造方法。该方法包括使得从茶获得的第一茶提取物溶液进行固液分离，使得当非聚合型儿茶素类的浓度调节至1重量％时，浊度变为200NTU或更低，从而获得第二（A）非聚合型儿茶素类的浓度为0.2〜5重量％，固体成分中的非聚合物儿茶素类的浓度为15〜80重量％的茶提取液，然后在95〜140℃的温度下对第二茶提取液进行热处理，F值为0.05〜40分钟。

84. 发明授权

US08110482B2 Miscut semipolar optoelectronic device 有权
标题翻译： Miscut半极光电子器件
公开(公告)号：US08110482B2
公开(公告)日：2012-02-07
申请号：US12710181
申请日：2010-02-22
申请人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02433 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译：使用有意识的基板改善半极性（Al，In，Ga，B）N半导体薄膜生长的方法。具体地说，该方法包括有意地将基板，基板加载到反应器中，在氮气和/或氢气和/或氨气流下加热基板，在加热的基板上沉积In x Ga 1-x N成核层，沉积半极性氮化物半导体薄膜在InxGa1-xN成核层上，并在氮气过压下冷却衬底。

85. 发明授权

US08102500B2 Stage device, exposure apparatus, and microdevice manufacturing method 有权
标题翻译：舞台装置，曝光装置和微装置制造方法
公开(公告)号：US08102500B2
公开(公告)日：2012-01-24
申请号：US11751225
申请日：2007-05-21
申请人： Hitoshi Sato , Yasuhito Sasaki , Keiji Emoto
发明人： Hitoshi Sato , Yasuhito Sasaki , Keiji Emoto
IPC分类号： G03B27/32 , G03B27/42 , G03B27/52 , G03B27/58 , G03B27/62 , H01B7/295 , H02K41/02
CPC分类号： G03F7/70858 , G03F7/70725
摘要： A stage device includes a base, and a stage movable portion being movable along a surface of the base. An interferometer measures a position of the stage movable portion, and at least one of a piping element and a wiring element is connected to the stage movable portion. An auxiliary member holds the piping element or the wiring element. The auxiliary member surrounds at least a portion of the piping element or the wiring element and is flexible, to be bent in accordance with the bending of the piping element or the wiring element, and a heat insulating material, held by the auxiliary member, reduces heat to be transferred from the piping element or the wiring element to a space through which measurement light of the interferometer passes.
摘要翻译：舞台装置包括底座以及可沿着底座的表面移动的舞台可动部分。干涉仪测量舞台可动部分的位置，并且管道元件和配线元件中的至少一个连接到舞台可移动部分。辅助构件保持管道元件或布线元件。辅助构件围绕管道元件或布线元件的至少一部分，并且是柔性的，根据管道元件或布线元件的弯曲而弯曲，并且由辅助构件保持的隔热材料减少要从管道元件或布线元件转移到干涉仪的测量光通过的空间。

86. 发明授权

US07988271B2 Ink jet printer, ink supply mechanism for the ink jet printer, and ink supply method 有权
标题翻译：喷墨打印机，喷墨打印机的供墨机构和墨水供应方法
公开(公告)号：US07988271B2
公开(公告)日：2011-08-02
申请号：US12418999
申请日：2009-04-06
申请人： Masaru Ohnishi , Hitoshi Sato
发明人： Masaru Ohnishi , Hitoshi Sato
IPC分类号： B41J2/175 , B41J2/165
CPC分类号： B41J2/17509
摘要： An ink jet printer system includes an ink jet head, a plurality of ink supplying cartridges, an ink flow channel and a control device. The ink flow channel connects the ink jet head and the plurality of ink supplying cartridges to supply ink from the plurality of ink supplying cartridges to the ink jet head. The control device is configured to sequentially supply ink from each of the plurality of ink supplying cartridges to the ink jet head.
摘要翻译：喷墨打印机系统包括喷墨头，多个供墨盒，墨流道和控制装置。油墨流动通道连接喷墨头和多个供墨盒，以将油墨从多个供墨盒供应到喷墨头。控制装置被配置为从多个供墨盒中的每一个向喷墨头依次供应墨水。

87. 发明授权

US07755172B2 Opto-electronic and electronic devices using N-face or M-plane GaN substrate prepared with ammonothermal growth 有权
标题翻译：使用用氨热生长制备的N面或M面GaN衬底的光电子和电子器件
公开(公告)号：US07755172B2
公开(公告)日：2010-07-13
申请号：US11765629
申请日：2007-06-20
申请人： Tadao Hashimoto , Hitoshi Sato , Shuji Nakamura
发明人： Tadao Hashimoto , Hitoshi Sato , Shuji Nakamura
IPC分类号： H01L29/04
CPC分类号： H01L29/045 , C30B7/10 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L29/2003 , H01L33/16 , Y10S438/973 , Y10T117/1064
摘要： A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.
摘要翻译：使用氨热生长技术生长具有N面或M面的III-V族氮化物膜的方法。该方法包括使用高压釜，加热高压釜，并将氨引入高压釜中以产生平滑的N面或M面氮化镓镓膜和体GaN。

88. 发明申请

US20100155778A1 METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (AL,IN,GA,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION 有权
标题翻译：用于增强半成品（AL，IN，GA，B）N生长的方法通过金属化学气相沉积
公开(公告)号：US20100155778A1
公开(公告)日：2010-06-24
申请号：US12716670
申请日：2010-03-03
申请人： Hitoshi Sato , John F. Kaeding , Michael Iza , Troy J. Baker , Benjamin A. Haskell , Steven P. DenBaars , Shuji Nakamura
发明人： Hitoshi Sato , John F. Kaeding , Michael Iza , Troy J. Baker , Benjamin A. Haskell , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L29/20 , H01L21/203
CPC分类号： H01L29/045 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02365 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262
摘要： A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al, In, Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译：通过使用含有至少一些铟的（Al，In，Ga）N成核层，通过金属有机化学气相沉积（MOCVD）增强器件质量的平面半极性半导体薄膜的生长的方法。具体地，该方法包括将衬底装载到反应器中，在氮气和/或氢气和/或氨气流下加热衬底，在加热衬底上沉积In x Ga 1-x N成核层，在半导体衬底上沉积半极性氮化物半导体薄膜 In x Ga 1-x N成核层，并在氮气过压下冷却该衬底。

89. 发明授权

US07576273B2 Hammer keyboard system and chassis 有权
标题翻译：锤式键盘系统和底盘
公开(公告)号：US07576273B2
公开(公告)日：2009-08-18
申请号：US11582778
申请日：2006-10-18
申请人： Shiro Uno , Hitoshi Sato
发明人： Shiro Uno , Hitoshi Sato
IPC分类号： G10C3/18
CPC分类号： G10H1/346
摘要： A hammer with simplified structure and reduced costs that maintains its capability as a mass body to impart a touch weight. The hammer is configured such that it is possible to fix the two mass plates to the metal base plate by means of a single rivet. Therefore, the number of places in which the rivet holes are drilled and disposed in both mass plates and the metal base plate are kept to a minimum, and it is possible to limit the lightening of the weight of both mass plates and the metal base plate by that amount. As a result, since it is possible to configure the base plates and the metal base plate with smaller dimensions while maintaining the required weight, the capability as a mass body to impart a touch weight can be maintained while preventing the enlarging of the hammer overall.
摘要翻译：具有简化结构和降低成本的锤子，其保持其作为质量体的能力以赋予触摸重量。锤子构造成使得可以通过单个铆钉将两个质量板固定到金属基板上。因此，将铆钉孔在金属板和金属基板上钻孔配置的位置的数量保持为最小，并且能够限制两块质量板和金属基板的重量的减轻这个数额。结果，由于可以在保持所需重量的同时将基板和金属基板配置成较小的尺寸，因此可以保持作为质量体的赋予触摸重量的能力，同时防止整个锤子的放大。

90. 发明授权

US07550861B2 AC power supplying system, power supply apparatus, and vehicle having the same 有权
标题翻译：交流供电系统，电源装置和具有该供电系统的车辆
公开(公告)号：US07550861B2
公开(公告)日：2009-06-23
申请号：US11663214
申请日：2005-11-29
申请人： Hichirosai Oyobe , Tetsuhiro Ishikawa , Yukihiro Minezawa , Hitoshi Sato
发明人： Hichirosai Oyobe , Tetsuhiro Ishikawa , Yukihiro Minezawa , Hitoshi Sato
IPC分类号： H02P9/04
CPC分类号： H02J9/062 , B60L1/006 , B60L7/14 , B60L11/123 , B60L11/14 , B60L11/1814 , B60L11/1816 , B60L11/1824 , B60L11/1842 , B60L15/2009 , B60L2210/14 , B60L2210/20 , B60L2210/40 , B60L2220/14 , B60L2220/54 , B60L2240/421 , B60L2240/423 , H02J7/0027 , H02M2001/008 , H02P25/16 , H02P27/06 , Y02E60/721 , Y02T10/6217 , Y02T10/641 , Y02T10/644 , Y02T10/645 , Y02T10/7005 , Y02T10/7055 , Y02T10/7072 , Y02T10/7077 , Y02T10/7225 , Y02T10/7241 , Y02T10/725 , Y02T10/7275 , Y02T10/92 , Y02T90/121 , Y02T90/127 , Y02T90/128 , Y02T90/14 , Y02T90/163 , Y04S10/126 , Y10T307/438
摘要： Upon power failure of a commercial power source, an automatic switching device switches to power supply from a hybrid vehicle. An ECU of the vehicle, when receiving a request for generation of a commercial AC voltage, sets an upper-limit power generation amount based on a remaining amount of fuel. The ECU transmits the upper-limit power generation amount via an antenna to an on-premises ECU, while controlling a power generation amount based on the upper-limit power generation amount. The on-premises, when receiving the upper-limit power generation amount, controls the load state such that commercial AC power is supplied firstly to a first load of priority level 1, according to proprieties registered in advance, and such that the amount of the power supplied to the electric loads does not exceed the upper-limit power generation amount.
摘要翻译：在商用电源断电时，自动切换装置切换到来自混合动力车辆的电源。车辆的ECU在接收到商业交流电压的生成请求时，基于余下的燃料量设定上限发电量。 ECU通过天线将上限发电量发送到室内ECU，同时基于上限发电量控制发电量。内部部门在接收到上限发电量时，根据预先注册的事项，控制负载状态，首先将商业交流电力首先提供给优先级1的第一负载，并且使得供给电负载的电力不超过上限发电量。

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