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81. 发明授权

US06557515B2 Structure for lubricating valve-operating device of OHC engine and cover member for OHC engine 失效
公开(公告)号：US06557515B2
公开(公告)日：2003-05-06
申请号：US09864075
申请日：2001-05-22
申请人： Akira Furuya , Takao Sakai
发明人： Akira Furuya , Takao Sakai
IPC分类号： F01M906
CPC分类号： F02B75/16 , F01M9/10 , F02B2075/027 , F02B2275/20 , F02F7/006 , F05C2201/021
摘要： A ceiling surface of a rocker cover mounted on a top of a cylinder head has an oil guide groove and an oil dripping portion. The oil guide groove extends along a rotation direction of a chain and faces the chain for guiding lubricating oil droplets separated from the chain into a single flow in a certain direction. The oil dripping portion is continuous with the oil guide groove and protruding toward a valve-operating device for dripping the lubricating oil guided by the oil guide groove onto the valve-operating device. Oil droplets thrown off from the chain are collected by the oil guide groove and dripped onto the valve-operating device via the oil dripping portion. Therefore, it can effectively supply the oil to a position where the valve-operating cam slidably contacts with the slipper, thereby improving the frictional resistance of the valve-operating device.

82. 发明授权

US06508238B2 Breather system for engine 有权
公开(公告)号：US06508238B2
公开(公告)日：2003-01-21
申请号：US09864073
申请日：2001-05-22
申请人： Akira Furuya
发明人： Akira Furuya
IPC分类号： F01M906
CPC分类号： F01M13/022 , F01M13/04 , F02B75/16 , F02B2275/20
摘要： A cylinder head is provided with a gas-liquid separation chamber apart from a chain chamber. The gas-liquid separation chamber is communicated with a crank chamber via a gas inlet and the chain chamber. The gas inlet is opened in the side direction of a chain within the chain chamber, and has an inclined bottom surface. At an upper end portion of the gas-liquid separation chamber is mounted an oil flow back chamber, which has an opening to communicate with a chain chamber. A blow-by gas in the crank chamber is guided into the gas-liquid separation chamber, where an oil component is separated, and then fed into another gas-liquid separation chamber in order to separate the oil component in two steps. Thereby, the oil component in the blow-by gas can be securely separated without adding new components or causing complication in a structure of breather system of an engine.

83. 发明授权

US06225656B1 Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating same 有权
标题翻译：含有保护层的铁电集成电路和氧气的制造方法
公开(公告)号：US06225656B1
公开(公告)日：2001-05-01
申请号：US09204033
申请日：1998-12-01
申请人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
发明人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
IPC分类号： H01L2972
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/56 , H01L2924/0002 , H01L2924/00
摘要： A protective layer in a ferroelectric integrated circuit contains small amounts of oxygen to protect ferroelectric oxide material against hydrogen degradation during the fabrication process. Typically, the protective layer is a hydrogen diffusion barrier layer formed to cover a thin film of ferroelectric oxide material. In one method, a small amount of oxygen is included in the sputter atmosphere during deposition of a hydrogen diffusion barrier or a metallized wiring layer. The oxygen forms oxides that inhibit diffusion of hydrogen towards the ferroelectric oxide material. The oxygen forms a concentration gradient so that the oxygen concentration in the interior of the protective layer is zero, and the oxygen concentration near the surfaces of the layer is about two weight percent.
摘要翻译：铁电集成电路中的保护层含有少量的氧以保护铁电氧化物材料在制造过程中抵抗氢降解。通常，保护层是形成为覆盖铁电氧化物材料的薄膜的氢扩散阻挡层。在一种方法中，在沉积氢扩散阻挡层或金属化布线层期间，溅射气氛中包含少量的氧。氧形成抑制氢向铁电氧化物材料扩散的氧化物。氧形成浓度梯度，使得保护层内部的氧浓度为零，并且层表面附近的氧浓度为约2重量％。

84. 发明授权

US5799027A Stepped substrate semiconductor laser for emitting light at slant portion 失效
标题翻译：用于在倾斜部分发射光的步进衬底半导体激光器
公开(公告)号：US5799027A
公开(公告)日：1998-08-25
申请号：US821567
申请日：1997-03-19
申请人： Chikashi Anayama , Takehiro Fukushima , Akira Furuya
发明人： Chikashi Anayama , Takehiro Fukushima , Akira Furuya
IPC分类号： H01S5/223 , H01S5/30 , H01S5/32 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2238 , H01S5/305 , H01S2301/173 , H01S5/3063 , H01S5/3077 , H01S5/3081 , H01S5/3203 , H01S5/3211 , H01S5/3213 , H01S5/34326
摘要： In a slant plane light emission type semiconductor laser whose laser structure can be formed on a stepped substrate by a series of MOCVD growth processes, the width of the active layer at the slant portion is set to 2.5 .mu.m or less or the angle between the flat portion and slant portion is set to 12 degrees or less. The semiconductor laser having such a structure can emit light having a single peak at the near field.
摘要翻译：在通过一系列MOCVD生长工艺可以在阶梯式衬底上形成激光结构的斜面发光型半导体激光器中，倾斜部分的有源层的宽度设定为2.5μm以下，平坦部分和倾斜部分设定为12度以下。具有这种结构的半导体激光器可以在近场发射具有单个峰值的光。

85. 发明授权

US5621748A Stripe laser diode having an improved efficiency for current confinement 失效
标题翻译：条纹激光二极管具有提高的电流限制效率
公开(公告)号：US5621748A
公开(公告)日：1997-04-15
申请号：US427352
申请日：1995-04-24
申请人： Makoto Kondo , Akira Furuya , Chikashi Anayama , Mami Sugano , Kay Domen , Toshiyuki Tanahashi , Hiroshi Sekiguchi
发明人： Makoto Kondo , Akira Furuya , Chikashi Anayama , Mami Sugano , Kay Domen , Toshiyuki Tanahashi , Hiroshi Sekiguchi
IPC分类号： G11B7/125 , H01L33/00 , H01L33/30 , H01S5/223 , H01S5/30 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01L33/305 , G11B7/126 , G11B7/127 , H01L33/0062 , H01S5/2232 , H01S5/305 , H01S5/32325 , H01S5/2234 , H01S5/2235 , H01S5/2237 , H01S5/2238 , H01S5/3077 , H01S5/321 , Y10S148/095
摘要： A method for fabricating a laser diode, comprises the steps of: forming a first stripe structure defined by a plurality of crystallographically distinct surfaces on a surface of a semiconductor substrate; forming an epitaxial layer of InGaAlP on the semiconductor substrate including the first stripe structure by a decomposition of gaseous source materials of In, Ga, Al and P; wherein the InGaAlP layer is doped to the p-type by incorporating Mg while growing the InGaAlP by adding a gaseous source material of Mg into said source materials of In, Ga, Al and P such that the InGaAlP layer is doped to the p-type with a substantially uniform carrier concentration level irrespective of the crystal surfaces forming the stripe structure.
摘要翻译：一种制造激光二极管的方法，包括以下步骤：在半导体衬底的表面上形成由多个晶体学上不同的表面限定的第一条纹结构; 通过分解In，Ga，Al和P的气态原料，在包括第一条纹结构的半导体衬底上形成InGaAlP的外延层; 其中通过在In，Ga，Al和P的所述源材料中加入Mg的气态源材料，使InGaAlP层掺杂成p型，将InGaAlP层掺杂成p型，同时生长InGaAlP，与形成条纹结构的晶体面无关，具有基本均匀的载流子浓度水平。

86. 发明授权

US5236831A Amino acid synthesis in corynebacteria using E. coli genes 失效
标题翻译：使用大肠杆菌基因在棒状杆菌中进行氨基酸合成
公开(公告)号：US5236831A
公开(公告)日：1993-08-17
申请号：US474648
申请日：1990-02-02
申请人： Ryoichi Katsumata , Akio Ozaki , Toru Mizukami , Motoko Kageyama , Morimasa Yagisawa , Tamio Mizukami , Seiga Itoh , Tetsuo Oka , Akira Furuya
发明人： Ryoichi Katsumata , Akio Ozaki , Toru Mizukami , Motoko Kageyama , Morimasa Yagisawa , Tamio Mizukami , Seiga Itoh , Tetsuo Oka , Akira Furuya
IPC分类号： C12N9/88 , C12N15/52 , C12N15/77 , C12P13/08 , C12P13/14
CPC分类号： C12N15/52 , C12N15/77 , C12N9/88 , C12P13/08 , C12P13/14
摘要： Disclosed is a process for expressing a gene and producing a metabolic product formed by the gene by culturing a transformant microorganism carrying a recombinant DNA constructed of a DNA fragment having at least one gene to be expressed and a vector DNA, at least one of which is foreign to the host microorganism.
摘要翻译：公开了通过培养携带由具有至少一种待表达基因的DNA片段和载体DNA构建的重组DNA的转化体微生物来表达基因并产生由该基因形成的代谢产物的方法，其中至少一种是外来宿主微生物。

87. 发明授权

US4681847A Novel lysozyme-sensitive microorganism 失效
标题翻译：新型溶菌酶敏感微生物
公开(公告)号：US4681847A
公开(公告)日：1987-07-21
申请号：US695574
申请日：1985-01-28
申请人： Ryoichi Katsumata , Tetsuo Oka , Akira Furuya
发明人： Ryoichi Katsumata , Tetsuo Oka , Akira Furuya
IPC分类号： C12N15/77 , C12N15/00 , C12N1/00 , C12N1/06 , C12N1/20 , C12N9/36 , C12P19/34 , C12P21/00 , C12R1/13 , C12R1/15
CPC分类号： C12R1/13 , C12N15/77 , C12R1/15 , Y10S435/84 , Y10S435/843
摘要： A novel lysozyme-sensitive microorganism belonging to the genus Corynebacterium or Brevibacterium and having a sensitivity to lysozyme at a concentration of less than 25 .mu.g/ml is provided from selected mutants. This novel microorganism is especially suitable for use in recombinant DNA technology.
摘要翻译：从选择的突变体提供属于棒杆菌属或短杆菌属的新型溶菌酶敏感性微生物，其浓度低于25μg/ ml对溶菌酶具有敏感性。该新型微生物特别适用于重组DNA技术。

88. 发明授权

US08679253B2 Deposition apparatus and method for depositing film 有权
标题翻译：沉积膜及其沉积方法
公开(公告)号：US08679253B2
公开(公告)日：2014-03-25
申请号：US11704295
申请日：2007-02-09
申请人： Akira Furuya
发明人： Akira Furuya
IPC分类号： C23C16/00 , C23C16/455 , C23C16/52
CPC分类号： C23C16/452 , C23C16/45525 , C23C16/45542 , C23C16/45561 , C23C16/515
摘要： An enhanced utilization efficiency of gases can be presented and an improved deposition characteristics are presented, when a film is deposited with a plurality of gases. A deposition apparatus 100 includes: a reaction chamber 102 for depositing a film; a first gas supply line 112 and a second gas supply line 152 for supplying a first source material A and a gas B to a reaction chamber 102, respectively; and an exciting unit 106 that is capable of exciting a gas supplied in the reaction chamber 102 to form a plasma. In the deposition apparatus 100 having such configuration, a deposition operation is performed by: a first operation for supplying a gas derived from a first source material A and a gas B in the reaction chamber 102 to cause the gas derived from a first source material A adsorbed on the substrate, thereby forming a deposition layer; and a second operation for supplying a second gas in reaction chamber 102, and treating the deposition layer with the gas in a condition of being plasma-excited.
摘要翻译：当使用多种气体沉积膜时，可以提供气体的提高的利用效率并提出改进的沉积特性。沉积设备100包括：用于沉积膜的反应室102; 分别将第一源材料A和气体B分别供应到反应室102中的第一气体供应管线112和第二气体供应管线152; 以及激励单元106，其能够激励在反应室102中供应的气体以形成等离子体。在具有这种结构的沉积设备100中，通过以下步骤进行沉积操作：第一操作，用于将来自第一源材料A和气体B的气体供应到反应室102中，以产生源自第一源材料A的气体吸附在基板上，从而形成沉积层; 以及用于在反应室102中供应第二气体并在等离子体激发的条件下用气体处理沉积层的第二操作。

89. 发明授权

US07854824B2 Method of manufacturing semiconductor device using electrochemical deposition with electric current revised by reflectance of every substrate surface and semiconductor manufacturing apparatus 失效
标题翻译：使用通过每个基板表面和半导体制造装置的反射率修正的电流的电化学沉积制造半导体器件的方法
公开(公告)号：US07854824B2
公开(公告)日：2010-12-21
申请号：US12068816
申请日：2008-02-12
申请人： Akira Furuya
发明人： Akira Furuya
IPC分类号： C25D21/12 , C25D17/00
CPC分类号： H01L22/14 , C23C4/12 , C23C26/00 , C25D5/02 , C25D7/123 , C25D17/001 , C25D21/12
摘要： A method of manufacturing a semiconductor device includes measuring the reflectance at the surface of a semiconductor substrate provided with concave portions and deciding a deposition parameter that represents a deposition condition corresponding to the measured reflectance. Then, a metal film is formed on the semiconductor substrate under a condition corresponding to the deposition parameter.
摘要翻译：一种制造半导体器件的方法包括测量设置有凹部的半导体衬底的表面的反射率，并确定表示对应于所测量的反射率的沉积条件的沉积参数。然后，在对应于沉积参数的条件下，在半导体衬底上形成金属膜。

90. 发明授权

US07755191B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07755191B2
公开(公告)日：2010-07-13
申请号：US11723498
申请日：2007-03-20
申请人： Akira Furuya
发明人： Akira Furuya
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L23/522 , H01L21/76829 , H01L21/76831 , H01L21/76843 , H01L21/76859 , H01L21/76873 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device includes a first copper-containing conductive film formed on a substrate, insulating films formed on the first copper-containing conductive film with a concave portion reaching the first copper-containing conductive film, a second barrier insulating film formed to cover the side wall of the concave portion of these insulating films, a second adhesive alloy film made of copper and a dissimilar element other than copper, and coming in contact with the first copper-containing conductive film at the bottom surface of the concave portion and in contact with the second barrier insulating film at the side wall of the concave portion to cover the inside wall of the concave portion, and a second copper-containing conductive film containing copper as a main component, and formed on the second adhesive alloy film in contact with the second adhesive alloy film to fill the concave portion.
摘要翻译：半导体器件包括：形成在基板上的第一含铜导电膜，形成在第一含铜导电膜上的绝缘膜，具有到达第一含铜导电膜的凹部;第二阻挡绝缘膜，形成为覆盖侧这些绝缘膜的凹部的壁，由铜构成的第二粘合剂合金膜和铜以外的异种元素，并且与凹部的底面的第一含铜导电膜接触并与在凹部的侧壁上的第二阻挡绝缘膜覆盖凹部的内壁，以及含有铜作为主要成分的第二含铜导电膜，并形成在与第二粘合合金膜接触的第二粘合合金膜上第二粘合剂合金膜填充凹部。

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