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81. 发明申请

US20070164400A1 SUBSTRATE STRUCTURE AND METHOD FOR FORMING PATTERNED LAYER ON SUBSTRATE STRUCTURE 审中-公开
标题翻译：基板结构和基板结构形成图案的方法
公开(公告)号：US20070164400A1
公开(公告)日：2007-07-19
申请号：US11309689
申请日：2006-09-12
申请人： Ching-Yu Chou , Yen-Huey Hsu , Wei-Yuan Chen
发明人： Ching-Yu Chou , Yen-Huey Hsu , Wei-Yuan Chen
IPC分类号： H01L23/58
CPC分类号： H01L51/0005 , H01L27/3295
摘要： A substrate structure includes a substrate and a number of banks formed on the substrate. The banks and the substrate cooperatively define a number of accommodating rooms. The accommodating rooms are configured for accommodating ink. A spread-control layer is formed on the substrate beneath the accommodating rooms. The spread-control layer enables the ink applied on the spread-control layer to spread at a lower spreading rate than the rate on the substrate without the spread-control layer formed thereon.
摘要翻译：衬底结构包括衬底和形成在衬底上的多个堤。银行和基板协调地界定了许多容纳室。容纳室被配置为容纳墨水。扩展控制层形成在容纳室下方的基板上。扩展控制层能够使涂布在扩展控制层上的油墨以比基板上的速率更低的扩展速率扩展，而不会在其上形成扩展控制层。

82. 发明申请

US20070146406A1 METHOD FOR MANUFACTURING PATTERNED THIN-FILM LAYER 审中-公开
标题翻译：制造图案薄膜层的方法
公开(公告)号：US20070146406A1
公开(公告)日：2007-06-28
申请号：US11309617
申请日：2006-09-01
申请人： YEN-HUEY HSU , YU-NING WANG , CHING-YU CHOU
发明人： YEN-HUEY HSU , YU-NING WANG , CHING-YU CHOU
IPC分类号： B41J29/38
CPC分类号： H01L51/0005 , G02B5/201 , H05K3/0023 , H05K3/107 , H05K3/125 , H05K3/1258 , H05K2203/013
摘要： A method for manufacturing a patterned thin-film layer includes the steps of: providing a substrate (102) with a plurality of walls (106), the walls cooperatively defining a plurality of spaces (108); depositing ink (110) into the plurality of spaces; controlling a temperature of the substrate so as to increase the viscosity of the ink deposited in the plurality of spaces; and solidifying the ink to form the patterned thin-film layer on the substrate.
摘要翻译：制造图案化薄膜层的方法包括以下步骤：提供具有多个壁（106）的基底（102），所述壁协同地限定多个空间（108）; 将墨水（110）沉积到所述多个空间中; 控制衬底的温度以增加沉积在多个空间中的油墨的粘度; 并固化该油墨以在该基板上形成图案化的薄膜层。

83. 发明申请

US20070120931A1 METHOD FOR MANUFACTURING SUBSTRATE HAVING THIN FILM PATTERN LAYER 审中-公开
标题翻译：用于制造薄膜图案的衬底的方法
公开(公告)号：US20070120931A1
公开(公告)日：2007-05-31
申请号：US11561348
申请日：2006-11-17
申请人： YU-NING WANG , YEN-HUEY HSU , CHING-YU CHOU
发明人： YU-NING WANG , YEN-HUEY HSU , CHING-YU CHOU
IPC分类号： B41J2/01
CPC分类号： G02B5/201
摘要： A method for manufacturing a substrate (10) having a thin film pattern layer (114) thereon includes the steps of: providing a preformed substrate (11) including a number of partition walls with ink repellent characteristic (104) and receiving spaces (106) bounded by the corresponding partition walls; filling the receiving spaces with an ink (112) containing a solidifiable content, wherein the ink received in each of the receiving spaces has a volume greater than that of the corresponding receiving space; and solidifying the ink so that the solidifiable content in the ink is formed into the thin film pattern layer in the receiving space.
摘要翻译：一种用于制造其上具有薄膜图案层（114）的基板（10）的方法，包括以下步骤：提供包括具有拒油特性（104）和接收空间（106）的多个分隔壁的预成型基板（11）由相应的隔墙限定; 用含有可凝固内容物的墨水（112）填充接收空间，其中在每个接收空间中接收的墨水的体积大于对应的接收空间的体积; 并使油墨固化，使得油墨中的可固化成分在接收空间中形成为薄膜图案层。

84. 发明申请

US20070093055A1 HIGH-ASPECT RATIO CONTACT HOLE AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：高比例接触孔及其制造方法
公开(公告)号：US20070093055A1
公开(公告)日：2007-04-26
申请号：US11163597
申请日：2005-10-24
申请人： Pei-Yu Chou , Jiunn-Hsiung Liao
发明人： Pei-Yu Chou , Jiunn-Hsiung Liao
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76802 , H01L21/02063 , H01L21/31116
摘要： A substrate has thereon a conductive region to be partially exposed by the contact hole, a contact etch stop layer overlying the substrate and covering the conductive region, and an inter-layer dielectric (ILD) layer on the contact etch stop layer. A photoresist pattern is formed on the ILD layer. The photoresist pattern has an opening directly above the conductive region. Using the photoresist pattern as an etch hard mask and the contact etch stop layer as an etch stop, an anisotropic dry etching process is performed to etch the ILD layer through the opening, thereby forming an upper hole region. The photoresist pattern is removed. An isotropic dry etching process is performed to dry etching the contact etch stop layer selective to the ILD layer through the upper hole region, thereby forming a widened, lower contact bottom that exposes an increased surface area of underlying conductive region.
摘要翻译：衬底上具有由接触孔部分露出的导电区域，覆盖衬底并覆盖导电区域的接触蚀刻停止层以及接触蚀刻停止层上的层间电介质层（ILD）层。在ILD层上形成光刻胶图形。光致抗蚀剂图案具有直接在导电区域上方的开口。使用光致抗蚀剂图案作为蚀刻硬掩模和接触蚀刻停止层作为蚀刻停止件，执行各向异性干蚀刻工艺以通过开口蚀刻ILD层，从而形成上部孔区域。去除光致抗蚀剂图案。执行各向同性干蚀刻工艺，以通过上孔区域干蚀刻对ILD层有选择性的接触蚀刻停止层，从而形成暴露下面导电区域的增加的表面积的加宽的下接触底部。

85. 发明申请

US20070090981A1 CURRENT STEERING DIGITAL-TO-ANALOG CONVERTER 有权
标题翻译：电流转向数字到模拟转换器
公开(公告)号：US20070090981A1
公开(公告)日：2007-04-26
申请号：US11306256
申请日：2005-12-21
申请人： Kuo-Yu Chou
发明人： Kuo-Yu Chou
IPC分类号： H03M1/66
CPC分类号： H03M1/68 , H03M1/742
摘要： A current steering digital-to-analog converter (DAC) is provided. At least two lower-resolution DACs are used for converting a high-resolution digital signal. One of the two lower-resolution DACs is used for converting the most significant bits (MSB) of the high-resolution digital signal. The other of the two lower-resolution DACs is used for converting the least significant bits (LSB) of the high-resolution digital signal. By such arrangement, a device mismatch problem is avoided and the chance of variation occurrence during manufacturing process is reduced. The arrangement also simplifies the layout in the significantly scaled-down chip area.
摘要翻译：提供了一种电流转向数模转换器（DAC）。至少两个较低分辨率的DAC用于转换高分辨率数字信号。两个较低分辨率DAC中的一个用于转换高分辨率数字信号的最高有效位（MSB）。两个较低分辨率DAC中的另一个用于转换高分辨率数字信号的最低有效位（LSB）。通过这样的布置，避免了器件失配问题，减少了制造过程中发生变化的可能性。该布置还简化了显着缩小芯片面积的布局。

86. 发明授权

US07195716B2 Etching process and patterning process 有权
标题翻译：蚀刻工艺和图案化工艺
公开(公告)号：US07195716B2
公开(公告)日：2007-03-27
申请号：US10711838
申请日：2004-10-08
申请人： Pei-Yu Chou
发明人： Pei-Yu Chou
IPC分类号： B44C1/22
CPC分类号： H01L21/76838 , H01L21/0206 , H01L21/32139
摘要： An etching process is described. A material layer having a bottom anti-reflection coating (BARC) and a patterned photoresist layer thereon is provided. An etching step is performed to the BARC using the patterned photoresist layer as a mask. A cleaning step is performed to remove the polymer formed on the surface of the patterned photoresist layer. Thereafter, another etching step is performed to the material layer using the patterned photoresist layer as a mask.
摘要翻译：描述蚀刻工艺。提供了具有底部防反射涂层（BARC）和其上的图案化光致抗蚀剂层的材料层。使用图案化的光致抗蚀剂层作为掩模对BARC进行蚀刻步骤。执行清洁步骤以除去形成在图案化光致抗蚀剂层的表面上的聚合物。此后，使用图案化的光致抗蚀剂层作为掩模对材料层进行另一蚀刻步骤。

87. 发明申请

US20060293412A1 Ink composition and manufacturing method of color filters 审中-公开
标题翻译：彩色滤光片的墨水组成和制造方法
公开(公告)号：US20060293412A1
公开(公告)日：2006-12-28
申请号：US11450254
申请日：2006-06-09
申请人： Ching-Yu Chou
发明人： Ching-Yu Chou
IPC分类号： C03C17/00
CPC分类号： C09D11/36
摘要： An ink composition includes a colorant, a solvent, and at least one component selected from the group consisting of monomer, oligomer, and macromolecule resin. The vapor pressure of the solvent is smaller than 0.33 mmHg at 20° C., but when the temperature of the solvent is between 60° C. and 90° C., the vapor pressure thereof increases at least five times than that of the solvent at 20° C. and/or the evaporation rate is larger than one tenth of that of butyl acetate at 20° C. The ink composition has excellent practicability. A manufacturing method of color filter using the ink composition includes the steps of: providing a transparent substrate; forming a black matrix on the transparent substrate; forming a plurality of banks on the black matrix; ejecting the ink composition into spaces defined by the banks via an ink jet device; and solidifying the ink composition.
摘要翻译：油墨组合物包括着色剂，溶剂和选自单体，低聚物和大分子树脂中的至少一种成分。溶剂的蒸气压在20℃时小于0.33mmHg，但当溶剂的温度在60℃至90℃之间时，其蒸气压比溶剂的蒸气压至少要高5倍在20℃下和/或蒸发速率大于20℃时乙酸丁酯的蒸发速率的十分之一。油墨组合物具有优异的实用性。使用油墨组合物的滤色器的制造方法包括以下步骤：提供透明基板; 在透明基板上形成黑色矩阵; 在黑矩阵上形成多个堤; 通过喷墨装置将墨水组合物喷射到由堤岸限定的空间中; 并固化该油墨组合物。

88. 发明申请

US20060281325A1 METHOD OF DEFINING POLYSILICON PATTERNS 有权
标题翻译：定义多晶硅图案的方法
公开(公告)号：US20060281325A1
公开(公告)日：2006-12-14
申请号：US11160178
申请日：2005-06-13
申请人： Pei-Yu Chou , Tong-Yu Chen
发明人： Pei-Yu Chou , Tong-Yu Chen
IPC分类号： H01L21/20
CPC分类号： H01L21/32139 , H01L21/31138 , H01L21/32137
摘要： The present invention provides a method of defining polysilicon patterns. The method forms a polysilicon layer on a substrate, and a patterned mask on the polysilicon layer. Then, a first etching process is performed to remove a portion of the polysilicon layer not covered by the mask, thus forming a plurality of cavities in the polysilicon layer. A strip process is performed to strip the mask utilizing gases excluding O2. Finally, a second etching process is performed to remove a portion of the polysilicon layer, thus extending the plurality of cavities down to a surface of the substrate.
摘要翻译：本发明提供了一种限定多晶硅图案的方法。该方法在衬底上形成多晶硅层，并在多晶硅层上形成图案化掩模。然后，进行第一蚀刻处理以去除未被掩模覆盖的多晶硅层的一部分，从而在多晶硅层中形成多个空腔。执行条带处理以利用除O 2以外的气体剥离掩模。最后，执行第二蚀刻工艺以去除多晶硅层的一部分，从而将多个空腔向下延伸到衬底的表面。

89. 发明授权

US07149395B1 Light-enhancing component and fabrication method thereof 有权
标题翻译：光增强成分及其制造方法
公开(公告)号：US07149395B1
公开(公告)日：2006-12-12
申请号：US11200307
申请日：2005-08-09
申请人： Jyh-Shin Chen , Tong-Long Fu , Shao-Chang Cheng , Yu-Hsuan Lin , Yi-Chiuen Hu , Hui-Hsiung Lin , Hsiao-Yu Chou
发明人： Jyh-Shin Chen , Tong-Long Fu , Shao-Chang Cheng , Yu-Hsuan Lin , Yi-Chiuen Hu , Hui-Hsiung Lin , Hsiao-Yu Chou
IPC分类号： G02B6/02 , G02B21/00 , C03B37/00 , B05D5/06
CPC分类号： G01Q60/22 , G02B6/262
摘要： The present invention provides a light-enhancing component and a fabrication method thereof by using the focused-ion-beam. In the present invention, the surface plasmon polariton structure is coated on the surface of the optical fiber so as to form the light-enhancing component. When the light passes through the optical fiber, the luminous flux transmitted through the aperture on the surface plasmon polariton is enhanced, and the light beam smaller than the diffraction limitation can be transmitted to the far-field, i.e. the nano-optic sword is formed. The light-enhancing component of the present invention can be used for the optical data storage, the optical microscopy, the biomedical detections and the lithography to perform the extra optical resolutions beyond the diffraction limitation.
摘要翻译：本发明通过使用聚焦离子束提供光增强组件及其制造方法。在本发明中，表面等离子体激元结构被涂覆在光纤表面上以形成光增强成分。当光通过光纤时，透过表面等离子体激元的孔径的光通量增强，小于衍射极限的光束可以传输到远场，即形成纳米光剑。本发明的光增强组件可用于光学数据存储，光学显微镜，生物医学检测和光刻以执行超出衍射限制的额外光学分辨率。

90. 发明申请

US20060199314A1 THIN FILM TRANSISTOR, AND METHOD OF FABRICATING THIN FILM TRANSISTOR AND PIXEL STRUCTURE 审中-公开
标题翻译：薄膜晶体管，以及薄膜晶体管和像素结构的制作方法
公开(公告)号：US20060199314A1
公开(公告)日：2006-09-07
申请号：US10906684
申请日：2005-03-02
申请人： Chiun-Hung Chen , Yu-Chou Lee
发明人： Chiun-Hung Chen , Yu-Chou Lee
IPC分类号： H01L21/84
CPC分类号： H01L27/124 , H01L29/66765
摘要： A thin film transistor and method of fabrication a thin film transistor and a pixel structure are provided. First, a gate is formed on the substrate. Then, a gate-isolating layer is formed on the substrate to cover the gate electrode. After that, a source/drain is formed on the gate-isolating layer and exposes a portion of the gate-isolating layer above the gate electrode. Then, a channel is formed on the portion of the gate-isolating layer above the gate. The source/drain layer is formed before forming the channel to prevent the channel from over etching as forming the source/drain layer. Therefore, the yields of manufacturing thin film transistor and pixel structure can be improved.
摘要翻译：提供薄膜晶体管和制造薄膜晶体管和像素结构的方法。首先，在基板上形成栅极。然后，在衬底上形成栅极隔离层以覆盖栅电极。之后，在栅极隔离层上形成源极/漏极，并将栅极隔离层的一部分暴露在栅极电极上方。然后，在栅极上方的栅极隔离层的部分上形成沟道。在形成沟道之前形成源极/漏极层，以防止沟道过蚀刻形成源极/漏极层。因此，可以提高制造薄膜晶体管和像素结构的产率。

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