专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

US20100055896A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100055896A1
公开(公告)日：2010-03-04
申请号：US12618161
申请日：2009-11-13
申请人： Hiroko ABE , Mikio YUKAWA , Tamae TAKANO , Yoshinobu ASAMI , Kiyoshi KATO , Ryoji NOMURA , Yoshitaka MORIYA
发明人： Hiroko ABE , Mikio YUKAWA , Tamae TAKANO , Yoshinobu ASAMI , Kiyoshi KATO , Ryoji NOMURA , Yoshitaka MORIYA
IPC分类号： H01L21/3205
CPC分类号： H01L27/1266 , B82Y10/00 , G11C13/0014 , G11C13/04 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L27/13 , H01L27/283 , H01L51/0059
摘要： It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.
摘要翻译：本发明的一个目的是提供一种挥发性有机存储器，其中除了在制造期间可以写入数据，并且可以防止通过改写伪造，并提供包括这种有机存储器的半导体器件。本发明的特征在于，半导体器件包括沿第一方向延伸的多个位线; 沿与第一方向不同的第二方向延伸的多个字线; 存储单元阵列，包括多个存储单元，每个存储单元分别设置在位线和字线的交点之一处; 以及设置在存储单元中的存储元件，其中存储元件包括位线，有机化合物层和字线，有机化合物层包括混合有无机化合物和有机化合物的层。

82. 发明申请

US20100054291A1 ORGANIC LASER DEVICE 有权
标题翻译：有机激光器件
公开(公告)号：US20100054291A1
公开(公告)日：2010-03-04
申请号：US12544381
申请日：2009-08-20
申请人： Mikio YUKAWA , Tetsuo TSUTSUI
发明人： Mikio YUKAWA , Tetsuo TSUTSUI
IPC分类号： H01S3/14
CPC分类号： H01S3/168 , H01S3/025 , H01S3/027 , H01S3/0625 , H01S3/0632 , H01S3/0635 , H01S3/083 , H01S3/0933 , H01S5/0425
摘要： To provide a small and lightweight organic laser device which can be manufactured in a reproductive manner and from which laser light with a desired wavelength can be obtained. A first substrate provided with a light-emitting element having a light-emitting layer between a pair of electrodes and a second substrate provided with a laser medium including a laser dye face each other and one of the pair of electrodes, which is placed between the light-emitting layer and the laser medium, has a light transmitting property. With such a structure, a laser device with which a laser medium and a light source are integrated can be provided.
摘要翻译：为了提供可以以生殖方式制造并且可以获得具有期望波长的激光的小而轻的有机激光装置。具备在一对电极之间具有发光层的发光元件的第一基板和设置有包括激光染料的激光介质的第二基板彼此面对，并且一对电极中的一个位于发光层和激光介质具有透光性。通过这样的结构，可以提供一体的激光介质和光源的激光装置。

83. 发明授权

US07611965B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07611965B2
公开(公告)日：2009-11-03
申请号：US11510420
申请日：2006-08-25
申请人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
发明人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
IPC分类号： H01L21/30
CPC分类号： H01L27/12 , H01L27/1244 , H01L27/1266 , H01L27/1285 , H01L27/1292 , H01L29/78603
摘要： It is an object of the present invention to manufacture, with high yield, semiconductor devices in each of which an element which has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-forming layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound over the separation layer, and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and after attaching a first flexible substrate over the second conductive layer, separating the separation layer and the element-forming layer at the separation layer.
摘要翻译：本发明的一个目的是以高产率制造其中每个具有含有有机化合物的层的元件设置在柔性基底上的半导体器件。一种制造半导体器件的方法包括：在衬底上形成分离层; 通过在分离层上形成无机化合物层，第一导电层和含有有机化合物的层来形成元件形成层，以及形成与含有有机化合物和无机物的层接触的第二导电层复合层; 并且在第二导电层上安装第一柔性基板之后，在分离层处分离分离层和元件形成层。

84. 发明申请

US20090065769A1 Semiconductor device amd method for manufacturing the same 有权
标题翻译：半导体装置的制造方法
公开(公告)号：US20090065769A1
公开(公告)日：2009-03-12
申请号：US11918611
申请日：2006-04-25
申请人： Mikio Yukawa , Nobuharu Ohsawa , Ryoji Nomura , Yoshinobu Asami
发明人： Mikio Yukawa , Nobuharu Ohsawa , Ryoji Nomura , Yoshinobu Asami
IPC分类号： H01L51/00 , H01L51/40
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/285 , H01L51/0591
摘要： It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semi-conductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.
摘要翻译：本发明的目的是提供一种以低成本，高成品率地制造设置有存储装置的高性能且高可靠性的存储装置和半导体装置的技术。半导体器件包括在第一导电层上包括绝缘体的有机化合物层和包含绝缘体的有机化合物层上的第二导电层。此外，半导体器件通过在第一导电层上形成第一导电层，排出绝缘体和有机化合物的组合物而形成包含绝缘体的有机化合物层，并在有机化合物层上形成第二导电层来制造包括绝缘体。

85. 发明申请

US20090052491A1 Organic laser apparatus 审中-公开
标题翻译：有机激光装置
公开(公告)号：US20090052491A1
公开(公告)日：2009-02-26
申请号：US12232132
申请日：2008-09-11
申请人： Ryoji Nomura , Hiroko Abe , Mikio Yukawa
发明人： Ryoji Nomura , Hiroko Abe , Mikio Yukawa
IPC分类号： H01S5/026 , H01L33/00
CPC分类号： H01S5/18305 , H01L51/5012 , H01L51/5048 , H01L51/5265 , H01S5/0425 , H01S5/1096 , H01S5/12 , H01S5/2004 , H01S5/2027 , H01S5/36 , H01S2301/04
摘要： The invention is an organic laser apparatus including an organic compound that radiates laser light when current is injected. In an organic compound layer employed for the laser apparatus of the invention, a laminated structure and film thickness of each layer are determined in consideration of wavelength so as to radiate laser light. The organic compound layer collectively means each thin film containing mainly an organic compound formed between a pair of electrodes. The organic compound layer is formed so as to be sandwiched between a pair of electrodes and, preferably, formed by a plurality of layers each having a different carrier transport property and a different light emission wavelength. In addition, it is preferable to form a so-called resonator structure, in which a reflector is provided between the pair of electrodes.
摘要翻译：本发明是一种有机激光装置，其包括在注入电流时照射激光的有机化合物。在本发明的激光装置中使用的有机化合物层中，考虑到波长来确定各层的层叠结构和膜厚以发射激光。有机化合物层是指主要含有形成在一对电极之间的有机化合物的薄膜。有机化合物层形成为夹在一对电极之间，优选由具有不同载流子传输性和不同发光波长的多个层形成。此外，优选形成所谓的谐振器结构，其中反射器设置在该对电极之间。

86. 发明申请

US20080283616A1 Memory Device and Semiconductor Device 有权
标题翻译：存储器件和半导体器件
公开(公告)号：US20080283616A1
公开(公告)日：2008-11-20
申请号：US11578057
申请日：2006-01-26
申请人： Mikio Yukawa , Hiroko Abe , Shunpei Yamazaki
发明人： Mikio Yukawa , Hiroko Abe , Shunpei Yamazaki
IPC分类号： G06K19/077 , G11C11/00
CPC分类号： G11C11/404 , H01L21/84 , H01L27/105 , H01L27/1052 , H01L27/12 , H01L27/285
摘要： It is an object of the present invention to provide an involatile memory device, in which additional writing of data is possible other than in manufacturing steps and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is also an object of the present invention to provide an inexpensive involatile memory device and a semiconductor device having high reliability. According to the present invention, a memory device includes a first conductive layer, a second conductive layer, and an insulating layer interposed between the first conductive layer and the second conductive layer, where the first conductive layer has a convex portion.
摘要翻译：本发明的目的是提供一种非易失性存储装置，其中可以除制造步骤之外的附加数据写入以及由于重写而导致的伪造等以及具有该存储装置的半导体装置。本发明的另一个目的是提供一种廉价的非易失性存储器件和具有高可靠性的半导体器件。根据本发明，存储器件包括第一导电层，第二导电层和介于第一导电层和第二导电层之间的绝缘层，其中第一导电层具有凸部。

87. 发明申请

US20080253420A1 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US20080253420A1
公开(公告)日：2008-10-16
申请号：US12213135
申请日：2008-06-16
申请人： Ryoji Nomura , Hiroko Abe , Mikio Yukawa , Shunpei Yamazaki
发明人： Ryoji Nomura , Hiroko Abe , Mikio Yukawa , Shunpei Yamazaki
IPC分类号： H01S3/04 , F21V9/00 , H01L33/00
CPC分类号： H01L27/322 , H01L27/3244 , H01L51/5265 , H01L2251/5315 , H01L2251/533 , H01L2251/558
摘要： The conventional light-emitting element formed by an electroluminescent material has a problem due to poor color purity of light emission. Accordingly, it is an object of the present invention to provide a high luminance and high efficiency light-emitting device formed by an organic compound material. The invention provides a light-emitting device in which an organic compound layer that emits light having an emission peak with a half-band width of at most 10 nm upon applying current is interposed between a pair of electrodes is provided. The variation of emission peak intensity depending on a current density can be sorted by two linear regions with different gradients. A region of a sharp gradient is at a higher current density side compared to a region of a slow gradient. TFTs are provided to each pixel in order to perform active matrix driving.
摘要翻译：由电致发光材料形成的常规发光元件由于发光的颜色纯度差而具有问题。因此，本发明的目的是提供一种由有机化合物材料形成的高亮度和高效率的发光装置。本发明提供了一种发光装置，其中，在一对电极之间插入有发光的有机化合物层，该有机化合物层在施加电流时具有半波带宽度至多为10nm的发光峰。根据电流密度的发射峰强度的变化可以通过具有不同梯度的两个线性区域进行分类。与缓慢梯度的区域相比，锐度梯度的区域处于较高的电流密度侧。为了进行有源矩阵驱动，向每个像素提供TFT。

88. 发明申请

US20080210932A1 Memory Element, Memory Device, and Semiconductor Device 有权
标题翻译：存储器元件，存储器件和半导体器件
公开(公告)号：US20080210932A1
公开(公告)日：2008-09-04
申请号：US11885970
申请日：2006-03-22
申请人： Mikio Yukawa , Nobuharu Ohsawa , Yoshinobu Asami
发明人： Mikio Yukawa , Nobuharu Ohsawa , Yoshinobu Asami
IPC分类号： H01L51/10
CPC分类号： H01L27/1255 , B82Y10/00 , G11C13/0014 , G11C13/0069 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L27/101 , H01L27/105 , H01L27/112 , H01L27/11206 , H01L27/11286 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/13 , H01L27/285 , H01L51/0042 , H01L51/0051 , H01L51/0059 , H01L51/0081 , H01L51/0533
摘要： On object of the invention is to provide a non-volatile memory device, in which data can be added to the memory device after a manufacturing process and forgery and the like by rewriting can be prevented, and a semiconductor device including the memory device. Another object of the invention is to provide a highly-reliable, inexpensive, and nonvolatile memory device and a semiconductor device including the memory device. A memory element includes a first conductive layer, a second conductive layer, a first insulating layer with a thickness of 0.1 nm or more and 4 nm or less being in contact with the first conductive layer, and an organic compound layer interposed between the first conductive layer, the first insulating layer, and the second conductive layer.
摘要翻译：本发明的目的是提供一种非易失性存储器件，其中可以在制造过程之后将数据添加到存储器件，并且可以防止通过重写来防止伪造等，以及包括存储器件的半导体器件。本发明的另一个目的是提供一种高度可靠，便宜且非易失性的存储器件和包括存储器件的半导体器件。存储元件包括第一导电层，第二导电层，与第一导电层接触的厚度为0.1nm以上且4nm以下的第一绝缘层，以及介于第一导电层之间的有机化合物层层，第一绝缘层和第二导电层。

89. 发明申请

US20080099878A1 Semiconductor Device and Manufacturing Method of the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080099878A1
公开(公告)日：2008-05-01
申请号：US11884016
申请日：2006-02-07
申请人： Mikio Yukawa , Gen Fujii , Hironobu Shoji
发明人： Mikio Yukawa , Gen Fujii , Hironobu Shoji
IPC分类号： H01L29/66 , H01L21/44
CPC分类号： G11C13/0014 , G11C13/004 , G11C2013/0042 , G11C2213/77 , G11C2213/79 , H01L27/283
摘要： It is an object of the present invention to provide a high-performance and high reliable semiconductor device and to provide a technique of manufacturing the semiconductor device at low cost with high yield. The semiconductor device is manufactured by steps of forming a first conductive layer, forming a first liquid-repellent layer over the first conductive layer, discharging a composition containing a material for a mask layer over the first liquid-repellent layer to form a mask layer, processing the first liquid-repellent layer with the use of the mask layer, forming a second liquid-repellent layer, forming an insulating layer over the first conductive layer and the second conductive layer, and forming a second conductive layer over the insulating layer.
摘要翻译：本发明的目的是提供一种高性能和高可靠性的半导体器件，并且以高成本提供低成本制造半导体器件的技术。半导体器件通过以下步骤制造：形成第一导电层，在第一导电层上形成第一液体排斥层，在第一拒液层上排出含有掩模层的材料的组合物以形成掩模层，使用掩模层处理第一液体排斥层，形成第二疏液层，在第一导电层和第二导电层上形成绝缘层，并在绝缘层上形成第二导电层。

90. 发明申请

US20080023696A1 Memory element and semiconductor device 有权
标题翻译：存储元件和半导体器件
公开(公告)号：US20080023696A1
公开(公告)日：2008-01-31
申请号：US11826227
申请日：2007-07-13
申请人： Mikio Yukawa , Nozomu Sugisawa
发明人： Mikio Yukawa , Nozomu Sugisawa
IPC分类号： H01L51/40 , H01L51/00
CPC分类号： H01L27/112 , B82Y10/00 , G11C11/5664 , G11C13/0014 , G11C13/004 , G11C2013/0054 , G11C2213/33 , G11C2213/34 , G11C2213/77 , G11C2213/79 , H01L21/84 , H01L24/12 , H01L24/28 , H01L24/81 , H01L24/83 , H01L27/11206 , H01L27/1203 , H01L2223/6677 , H01L2224/2929 , H01L2224/293 , H01L2224/81801 , H01L2224/83851 , H01L2924/00011 , H01L2924/01004 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01025 , H01L2924/01037 , H01L2924/01055 , H01L2924/01063 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/07811 , H01L2924/12032 , H01L2924/12036 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/3512 , H01L2924/00 , H01L2224/29075 , H01L2924/00014
摘要： An object is to reduce variations in programming behavior from memory element to memory element. Furthermore, an object is to obtain a semiconductor device with excellent writing characteristics and in which the memory element is mounted. The memory element includes a first conductive layer, a metal oxide layer, a semiconductor layer, an organic compound layer, and a second conductive layer, where the metal oxide layer, the semiconductor layer, and the organic compound layer are interposed between the first conductive layer and the second conductive layer; the metal oxide layer is provided in contact with the first conductive layer; and the semiconductor layer is provided in contact with the metal oxide layer. By use of this kind of structure, variations in programming behavior from memory element to memory element are reduced.
摘要翻译：一个目的是减少编程行为从内存元素到内存元素的变化。此外，目的是获得具有优良写入特性的半导体器件，并且其中安装存储元件。存储元件包括第一导电层，金属氧化物层，半导体层，有机化合物层和第二导电层，其中金属氧化物层，半导体层和有机化合物层介于第一导电层层和第二导电层; 金属氧化物层设置成与第一导电层接触; 并且所述半导体层设置成与所述金属氧化物层接触。通过使用这种结构，减少了从存储元件到存储元件的编程行为的变化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式