专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

US20080130698A1 NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US20080130698A1
公开(公告)日：2008-06-05
申请号：US11948058
申请日：2007-11-30
申请人： Yasuyuki BESSHO , Yasuhiko Nomura , Masayuki Hata
发明人： Yasuyuki BESSHO , Yasuhiko Nomura , Masayuki Hata
IPC分类号： H01S5/026 , H01L33/00
CPC分类号： H01S5/22 , B82Y20/00 , H01L33/0095 , H01S5/0202 , H01S5/0207 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S5/2201 , H01S5/2214 , H01S5/3063 , H01S5/3072 , H01S5/34333 , H01S2304/04
摘要： A nitride-based semiconductor device includes a substrate constituted by nitride-based semiconductor, a nitride-based semiconductor layer formed on the substrate and constituted by nitride-based semiconductor, formed with a light waveguide extending in a first direction, and first step portions formed at least on regions other than the vicinity of facets of the light waveguide from a surface opposite to a side where the nitride-based semiconductor layer of the substrate is formed along the first direction in which the light waveguide extends.
摘要翻译：氮化物类半导体器件包括由氮化物类半导体构成的衬底，形成在衬底上并由氮化物类半导体构成的氮化物类半导体层，形成有沿第一方向延伸的光波导，形成有第一级部至少在与光波导延伸的第一方向上形成有与基板的氮化物系半导体层相反的一侧的表面附近的光波导的小面附近的区域。

82. 发明授权

US07376166B2 Semiconductor laser apparatus and optical pickup apparatus 失效
标题翻译：半导体激光装置和光学拾取装置
公开(公告)号：US07376166B2
公开(公告)日：2008-05-20
申请号：US11387061
申请日：2006-03-23
申请人： Masayuki Hata , Yasuyuki Bessho , Yasuhiko Nomura , Masayuki Shono , Seiji Kajiyama , Yoichi Tsuchiya
发明人： Masayuki Hata , Yasuyuki Bessho , Yasuhiko Nomura , Masayuki Shono , Seiji Kajiyama , Yoichi Tsuchiya
IPC分类号： H01S5/00
CPC分类号： H01S5/4043 , B82Y20/00 , G11B7/123 , G11B7/1275 , G11B2007/0006 , H01L2224/48091 , H01L2224/73265 , H01S5/0202 , H01S5/0207 , H01S5/02212 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/2214 , H01S5/2231 , H01S5/3432 , H01S5/34326 , H01S5/34333 , H01S5/4031 , H01S5/4087 , H01L2924/00014
摘要： A blue-violet emission point, an infrared emission point, and a red emission point in a semiconductor laser apparatus are arranged so as to be arranged in this order on a substantially straight line along a first direction. A blue-violet laser beam emitted from the blue-violet emission point and a red laser beam emitted from the red emission point are incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a λ/4 plate, an objective lens, a cylindrical lens, and an optical disk, is returned from the optical disk, and is introduced into an photodetector. The infrared laser beam emitted from the infrared emission point is incident on the optical disk by the optical system, is returned from the optical disk, and is introduced into the photodetector.
摘要翻译：半导体激光装置中的蓝紫色发射点，红外发射点和红色发射点被布置成沿着第一方向以大致直线排列。从蓝紫色发射点发射的蓝紫色激光束和从红色发射点发射的红色激光束通过包括偏振分束器，准直透镜，光束扩展器，光束扩散器 λ/ 4板，物镜，柱面透镜和光盘从光盘返回，并被引入光电检测器。从红外发射点发射的红外激光束通过光学系统入射到光盘上，从光盘返回，并被引入光电检测器。

83. 发明申请

US20070274360A1 Semiconductor laser element and semiconductor laser device 审中-公开
标题翻译：半导体激光元件和半导体激光器件
公开(公告)号：US20070274360A1
公开(公告)日：2007-11-29
申请号：US11710922
申请日：2007-02-27
申请人： Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
发明人： Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/2223
摘要： A semiconductor laser element includes a semiconductor layer, an insulating layer and an electrode. The semiconductor layer is formed on a substrate, and includes a raised portion extending along a predetermined direction and flat portions provided on outer sides in a width direction of the raised portion. The insulating layer is formed on upper surfaces of the flat portions and side surfaces of the raised portion. The electrode includes a first portion provided along the predetermined direction on the raised portion and a second portion including a plurality of protruding portions protruding outward from the first portion in the width direction of the raised portion. A gap through which the insulating layer is exposed is provided between each adjacent two of the plurality of protruding portions.
摘要翻译：半导体激光元件包括半导体层，绝缘层和电极。半导体层形成在基板上，并且包括沿着预定方向延伸的凸起部分和设置在凸起部分的宽度方向上的外侧的平坦部分。绝缘层形成在凸起部分的平坦部分和侧表面的上表面上。电极包括沿着预定方向设置在凸起部分上的第一部分和第二部分，其包括从凸起部分的宽度方向上的第一部分向外突出的多个突出部分。在相邻的两个突出部分之间设置有绝缘层暴露的间隙。

84. 发明授权

US07244964B2 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US07244964B2
公开(公告)日：2007-07-17
申请号：US10923830
申请日：2004-08-24
申请人： Masayuki Hata
发明人： Masayuki Hata
IPC分类号： H01L27/15
CPC分类号： H01L33/06 , B82Y20/00 , H01S5/0421 , H01S5/0607 , H01S5/34333
摘要： An n-type layer of the opposite conduction type composed of n-GaN is formed between a light emitting layer and a p-type cladding layer composed of p-AlGaN. The bandgap of the n-type layer of the opposite conduction type is larger than the bandgap of the light emitting layer and is smaller than the bandgap of the p-type cladding layer.
摘要翻译：在由p-AlGaN构成的发光层和p型覆盖层之间形成由n-GaN构成的相反导电型的n型层。相反导电类型的n型层的带隙大于发光层的带隙，并且小于p型覆层的带隙。

85. 发明申请

US20070077669A1 Nitride-based semiconductor device and method of fabricating the same 审中-公开
公开(公告)号：US20070077669A1
公开(公告)日：2007-04-05
申请号：US11607896
申请日：2006-12-04
申请人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
发明人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/00
CPC分类号： H01S5/32341 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/66462 , H01L33/007 , H01L33/0079 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/2201 , H01S5/305 , H01S5/34333 , H01S2304/04
摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

86. 发明申请

US20070012929A1 Nitride-based semiconductor light-emitting device and method of fabricating the same 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US20070012929A1
公开(公告)日：2007-01-18
申请号：US11520583
申请日：2006-09-14
申请人： Masayuki Hata , Yasuhiko Nomura , Daijiro Inoue
发明人： Masayuki Hata , Yasuhiko Nomura , Daijiro Inoue
IPC分类号： H01L33/00 , H01L31/12 , H01L29/24 , H01L27/15 , H01L29/26
CPC分类号： H01L33/145 , B82Y20/00 , H01L33/32 , H01S5/0213 , H01S5/0422 , H01S5/0425 , H01S5/2022 , H01S5/204 , H01S5/2205 , H01S5/2206 , H01S5/2216 , H01S5/2219 , H01S5/2224 , H01S5/2226 , H01S5/2231 , H01S5/3063 , H01S5/3213 , H01S5/32341 , H01S5/34333 , H01S2301/173 , H01S2301/18 , H01S2304/04
摘要： A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.
摘要翻译：获得能够稳定横向光束缚的氮化物系半导体发光元件。该氮化物系半导体发光元件具有形成在发光层上的发光层，包层，具有第一氮化物系半导体层，具有电流通路部和电流阻挡层，形成为覆盖侧面的电流路径部分，包括第二氮化物基半导体层，而电流阻挡层形成在电流路径部分附近，并且没有电流阻挡层的区域包括在不在电流附近的区域中路径部分。因此，电流阻挡层的宽度减小，由此施加到电流阻挡层的应变松弛。因此，可以提高电流阻挡层的厚度，从而稳定横向光的限制。

87. 发明申请

US20050141240A1 Light emitting device and fabrication method thereof 审中-公开
标题翻译：发光元件及其制造方法
公开(公告)号：US20050141240A1
公开(公告)日：2005-06-30
申请号：US10953066
申请日：2004-09-30
申请人： Masayuki Hata , Ryoji Hiroyama , Tatsuya Kunisato , Keiichi Kuramoto , Hitoshi Hirano
发明人： Masayuki Hata , Ryoji Hiroyama , Tatsuya Kunisato , Keiichi Kuramoto , Hitoshi Hirano
IPC分类号： F21V7/00 , H01L33/22 , H01L33/32 , H01L33/48 , H01S5/00
CPC分类号： H01L33/58 , H01L33/44 , H01L33/54 , H01L2924/0002 , H01L2924/00
摘要： A pre-curing viscous solution (precursor solution) is applied to the back surface of a substrate for forming an optically transparent layer principally composed of an inorganic material. The substrate is heated or irradiated with UV light while being pressed with unevenness of a mold. By removing the substrate from the mold, the optically transparent, inorganic material layer principally composed of the inorganic material is formed on the substrate. In this manner, the inorganic material layer with the unevenness is formed on the back surface of the substrate (a light extraction surface) by embossing.
摘要翻译：将预固化粘性溶液（前体溶液）施加到用于形成主要由无机材料构成的光学透明层的基板的背面。在用模具的不均匀性压制的同时，用UV光照射基板。通过从模具中除去基材，在基材上形成主要由无机材料构成的光学透明的无机材料层。以这种方式，通过压花在基板的背面（光提取面）上形成具有凹凸的无机材料层。

88. 发明申请

US20050067625A1 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20050067625A1
公开(公告)日：2005-03-31
申请号：US10951816
申请日：2004-09-29
申请人： Masayuki Hata
发明人： Masayuki Hata
IPC分类号： H01L21/28 , G02B6/122 , H01L27/15 , H01L33/38 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/10 , H01S5/183 , H01S5/22 , H01S5/343
CPC分类号： H01L33/387 , B82Y20/00 , G02B6/1225 , G02B6/1226 , H01L33/405 , H01L2933/0083 , H01S5/0425 , H01S5/1046 , H01S5/18319 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light-emitting device capable of attaining a surface plasmon effect while attaining excellent ohmic contact is provided. This semiconductor light-emitting device comprises a semiconductor layer formed on an emission layer, a first electrode layer formed on the semiconductor layer and a second electrode layer, formed on the first electrode layer, having a periodic structure. The first electrode layer is superior to the second electrode layer in ohmic contact with respect to the semiconductor layer, and the second electrode layer contains a metal exhibiting a higher plasma frequency than the first electrode layer.
摘要翻译：提供能够获得表面等离子体激元效应同时获得优异的欧姆接触的半导体发光器件。该半导体发光器件包括形成在发光层上的半导体层，形成在半导体层上的第一电极层和形成在第一电极层上的具有周期性结构的第二电极层。第一电极层相对于半导体层以欧姆接触优于第二电极层，并且第二电极层含有比第一电极层具有更高等离子体频率的金属。

89. 发明授权

US06759139B2 Nitride-based semiconductor element and method of forming nitride-based semiconductor 有权
标题翻译：基于氮化物的半导体元件和形成氮化物基半导体的方法
公开(公告)号：US06759139B2
公开(公告)日：2004-07-06
申请号：US10081842
申请日：2002-02-25
申请人： Tatsuya Kunisato , Nobuhiko Hayashi , Hiroki Ohbo , Masayuki Hata , Tsutomu Yamaguchi
发明人： Tatsuya Kunisato , Nobuhiko Hayashi , Hiroki Ohbo , Masayuki Hata , Tsutomu Yamaguchi
IPC分类号： H01L2912
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02387 , H01L21/0242 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L29/2003 , H01S5/32341 , Y10T428/12528 , Y10T428/24802
摘要： A nitride-based semiconductor element enabling formation of a nitride-based semiconductor layer having low dislocation density, consisting of a material different from that of an underlayer, on the underlayer with a small thickness is obtained. This nitride-based semiconductor element comprises a plurality of mask layers formed at a prescribed interval to be in contact with the upper surface of the underlayer while partially exposing the underlayer and the nitride-based semiconductor layer, formed on the upper surface of the underlayer and the mask layers, consisting of the material different from that of the underlayer. The minimum distance between adjacent mask layers is smaller than the width of an exposed part of the underlayer located between the adjacent mask layers.
摘要翻译：获得能够在厚度较小的底层上形成由不同于下层的材料构成的位错密度低的氮化物系半导体元件的氮化物系半导体元件。这种氮化物基半导体元件包括以规定间隔形成的多个掩模层，以与底层的上表面接触，同时部分地暴露形成在底层的上表面上的下层和氮化物类半导体层，掩模层，由与底层不同的材料组成。相邻掩模层之间的最小距离小于位于相邻掩模层之间的底层的暴露部分的宽度。

90. 外观设计

USD375491S Magnetic optical disc cartridge 失效
公开(公告)号：USD375491S
公开(公告)日：1996-11-12
申请号：US36698
申请日：1995-03-24
申请人： Masayuki Hata
设计人： Masayuki Hata

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式