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81. 发明申请

US20060044705A1 CPP magnetic detecting element including a CoFe pinned layer or free layer 有权
标题翻译： CPP磁检测元件包括CoFe钉扎层或自由层
公开(公告)号：US20060044705A1
公开(公告)日：2006-03-02
申请号：US11216870
申请日：2005-08-29
申请人： Naoya Hasegawa , Masamichi Saito , Yosuke Ide , Masahiko Ishizone
发明人： Naoya Hasegawa , Masamichi Saito , Yosuke Ide , Masahiko Ishizone
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/1936 , H01F10/3272
摘要： A CPP magnetic sensing element is provided which may exhibit a large value of ΔRA (the product of the resistance variation ΔR and area A of the magnetic sensing element). The magnetic sensing element includes a free magnetic layer and a pinned magnetic layer. At least one of these layers has a (Co0.67Fe0.33)100-aZa alloy layer, wherein Z may represent at least one element selected from the group consisting of Al, Ga, Si, Ge, Sn, and Sb, and the parameter a may satisfy the relationship 0
摘要翻译：提供了一种CPP磁感应元件，其可以表现出大的DeltaRA值（电阻变化量ΔR和磁感测元件的面积A的乘积）。磁感应元件包括自由磁性层和钉扎磁性层。这些层中的至少一层具有（Co x 0.67 Fe 3 O 3）100 a a z a a a a合金层，其中Z可以表示选自Al，Ga，Si，Ge，Sn和Sb中的至少一种元素，并且参数a可以满足关于原子百分比的关系0

82. 发明申请

US20050280954A1 Magnetic sensing device with multilayered pinned magnetic layer having magnetostriction-enhancing layer 有权
标题翻译：具有具有磁致伸缩增强层的多层固定磁性层的磁感测装置
公开(公告)号：US20050280954A1
公开(公告)日：2005-12-22
申请号：US11156678
申请日：2005-06-20
申请人： Naoya Hasegawa , Masamichi Saito , Eiji Umetsu
发明人： Naoya Hasegawa , Masamichi Saito , Eiji Umetsu
IPC分类号： G01R33/09 , G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： A magnetic sensing device is presented that has a multilayer material with a pinned magnetic layer, a nonmagnetic material layer, and a free magnetic layer. The pinned magnetic layer is a composite with a nonmagnetic intermediate layer and magnetic thin-film layers separated from each other by the nonmagnetic intermediate layer. A first nonmagnetic magnetostriction-enhancing layer is on the pinned magnetic layer and contacts a first thin-film layer placed farthest from the nonmagnetic material layer. At least one of the magnetic thin-film layers has a composite structure with a second nonmagnetic magnetostriction-enhancing layer and magnetic layers separated from each other by the second magnetostriction-enhancing layer. All of the magnetic layers are magnetized in the same direction antiparallel to the adjacent magnetic thin-film layer. At least some crystals of the first and second magnetostriction-enhancing layers and the first thin-film layer/magnetic layers are epitaxial or heteroepitaxial.
摘要翻译：本发明提供一种具有多层材料的磁感测装置，其具有钉扎磁性层，非磁性材料层和自由磁性层。钉扎磁性层是具有非磁性中间层和通过非磁性中间层彼此分离的磁性薄膜层的复合材料。第一非磁性磁致伸缩增强层位于被钉扎的磁性层上，并接触放置在最远离非磁性材料层的第一薄膜层。磁性薄膜层中的至少一个具有与第二非磁致伸缩增强层和由第二磁致伸缩增强层彼此分离的磁性层的复合结构。所有的磁性层在与相邻的磁性薄膜层反平行的相同方向被磁化。第一和第二磁致伸缩增强层和第一薄膜层/磁性层的至少一些晶体是外延或异质外延的。

83. 发明申请

US20050266274A1 Magnetic sensor using half-metal for pinned magnetic layer 审中-公开
标题翻译：磁性传感器采用半金属作为固定磁性层
公开(公告)号：US20050266274A1
公开(公告)日：2005-12-01
申请号：US11142755
申请日：2005-06-01
申请人： Naoya Hasegawa , Masamichi Saito , Yosuke Ide , Masahiko Ishizone
发明人： Naoya Hasegawa , Masamichi Saito , Yosuke Ide , Masahiko Ishizone
IPC分类号： C22C19/07 , C22C38/00 , G11B5/37 , G11B5/39 , G11B5/66 , H01F10/16 , H01F10/32 , H01L43/08
CPC分类号： G11B5/372
摘要： When a pinned magnetic layer includes an underlayer and a Heusler alloy layer, a product ΔR×A of the amount of change in resistance and an element surface area of a magnetic sensor per unit area is increased. That is, a magnetic field detection sensitivity of the magnetic sensor can be improved. It is believed that the magnetic field detection sensitivity of the magnetic sensor is improved by the present invention because a misfit percentage between the underlayer and the Heusler alloy layer is small, and therefore the crystallinity or the periodicity of the Heusler alloy layer is improved.
摘要翻译：当钉扎磁性层包括底层和Heusler合金层时，每单位面积的电阻变化量和磁性传感器的元件表面积的乘积ΔRxA增加。也就是说，可以提高磁传感器的磁场检测灵敏度。据信本发明改善了磁传感器的磁场检测灵敏度，因为底层和Heusler合金层之间的失配百分比小，从而提高了Heusler合金层的结晶度或周期性。

84. 发明申请

US20050074634A1 Magnetic sensing element including pinned layer and/or free layer composed of [110] crystal planes-oriented heusler alloy 失效
标题翻译：磁感应元件包括由[110]晶面取向的heusler合金构成的固定层和/或自由层
公开(公告)号：US20050074634A1
公开(公告)日：2005-04-07
申请号：US10953647
申请日：2004-09-29
申请人： Naoya Hasegawa , Masamichi Saito , Yosuke Ide
发明人： Naoya Hasegawa , Masamichi Saito , Yosuke Ide
IPC分类号： C22C19/07 , C22C38/00 , G11B5/31 , G11B5/39 , H01F10/16 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/64
CPC分类号： G11B5/3116 , Y10T428/1107 , Y10T428/115 , Y10T428/1193
摘要： A magnetic sensing element using a thin film composed of an adequately crystallized Heusler alloy is provided. At least one of free magnetic layer and pinned magnetic layer includes a Heusler alloy layer. The Heusler alloy layer has a body-centered cubic (bcc) structure, in which equivalent crystal planes represented as [220] planes are preferentially oriented in the direction parallel to the layer surface. The Heusler alloy layer is disposed on a bcc layer having a body-centered cubic (bcc) structure, in which equivalent crystal planes represented as [110] planes are preferentially oriented in the direction parallel to the layer surface.
摘要翻译：提供了使用由适当结晶的Heusler合金构成的薄膜的磁传感元件。自由磁性层和钉扎磁性层中的至少一个包括Heusler合金层。 Heusler合金层具有体心立方（bcc）结构，其中以[220]面代表的等效晶面优先在平行于层表面的方向上取向。 Heusler合金层设置在具有体心立方（bcc）结构的bcc层中，其中以[110]面代表的等效晶面优先在平行于层表面的方向上取向。

85. 发明授权

US06862158B2 Exchange coupling film having improved wettability of seed layer 失效
标题翻译：具有改善种子层润湿性的交换耦合膜
公开(公告)号：US06862158B2
公开(公告)日：2005-03-01
申请号：US10197654
申请日：2002-07-17
申请人： Naoya Hasegawa , Masamichi Saito , Kenichi Tanaka
发明人： Naoya Hasegawa , Masamichi Saito , Kenichi Tanaka
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01F41/30 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , H01F10/3268 , H01F41/303 , H01F41/325
摘要： A seed layer is formed of a Cr film with a thickness of 15 Å or more and 50 Å or less comprising at least partially an amorphous phase, thereby enabling wettability of the surface the seed layer to be remarkably improved as compared with conventional one, the unidirectional bias magnetic field in the pinned magnetic layer to be increased, and the surface of each layer on the seed layer to have good lubricity.
摘要翻译：种子层由至少部分为非晶相的厚度为15以上且50以下的Cr膜形成，从而与现有技术相比，种子层的表面的润湿性显着提高，固定磁性层中的单向偏置磁场增加，种子层上各层的表面具有良好的润滑性。

86. 发明授权

US06856494B2 Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers 失效
标题翻译：具有偏置层和铁磁层的旋转阀型薄膜磁性元件
公开(公告)号：US06856494B2
公开(公告)日：2005-02-15
申请号：US09885871
申请日：2001-06-20
申请人： Masahiro Ooshima , Eiji Umetsu , Masamichi Saito , Kenichi Tanaka , Naoya Hasegawa , Yosuke Ide
发明人： Masahiro Ooshima , Eiji Umetsu , Masamichi Saito , Kenichi Tanaka , Naoya Hasegawa , Yosuke Ide
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , H01F10/3272 , H01L43/08
摘要： The present invention provides a spin-valve type thin film magnetic element that is able to certainly align the magnetization direction of the free magnetic layer in one direction by improving the exchange coupling magnetic field generated between the bias layers and ferromagnetic layer, and is able to reduce the thickness of the bias layer to be smaller than the thickness of the bias layer of the conventional spin-valve type thin film magnetic element for obtaining the same magnitude of the exchange coupling magnetic layer as that in the conventional spin-valve type thin film magnetic element.
摘要翻译：本发明提供了一种自旋阀型薄膜磁性元件，其能够通过改善在偏置层和铁磁层之间产生的交换耦合磁场，从而在一个方向上肯定地对准自由磁性层的磁化方向，并且能够将偏置层的厚度减小到比传统的自旋阀型薄膜磁性元件的偏置层的厚度小，以获得与传统的自旋阀型薄膜相同的交换耦合磁性层的大小磁性元件。

87. 发明申请

US20050018363A1 Spin-valve magnetoresistive element having fixed magnetic layer of epitaxal laminate including magnetic layer and nonmagnetic layer 有权
标题翻译：旋转阀磁阻元件具有包含磁性层和非磁性层的上层叠层的固定磁性层
公开(公告)号：US20050018363A1
公开(公告)日：2005-01-27
申请号：US10925268
申请日：2004-08-24
申请人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Yosuke Ide , Masahiro Oshima
发明人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Yosuke Ide , Masahiro Oshima
IPC分类号： G01R33/09 , G11B5/39
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3906 , Y10T29/49034 , Y10T428/1121 , Y10T428/1143
摘要： A fixed magnetic layer contains a first magnetic layer formed on a non-magnetic metal layer. The non-magnetic metal layer is composed of an X—Mn alloy (where X is selected from Pt, Pd, Ir, Rh, Ru, Os, Ni, and Fe). While atoms forming the first magnetic layer and atoms forming the non-magnetic metal layer are being aligned with each other, strains are generated in the individual crystal structures. By generating the strain in the crystal structure of the first magnetic layer, the magnetostriction constant λ is increased. As a result, a magnetic sensor having a large magnetoelastic effect can be provided.
摘要翻译：固定磁性层包含形成在非磁性金属层上的第一磁性层。非磁性金属层由X-Mn合金（其中X选自Pt，Pd，Ir，Rh，Ru，Os，Ni和Fe）组成。虽然形成第一磁性层的原子和形成非磁性金属层的原子彼此对准，但在各个晶体结构中产生应变。通过在第一磁性层的晶体结构中产生应变，磁致伸缩常数λ增加。结果，可以提供具有大的磁弹性效应的磁传感器。

88. 发明授权

US06764778B2 Thin film magnetic element with accurately controllable track width and method of manufacturing the same 失效
标题翻译：具有精确可控轨迹宽度的薄膜磁性元件及其制造方法
公开(公告)号：US06764778B2
公开(公告)日：2004-07-20
申请号：US09997910
申请日：2001-10-31
申请人： Masamichi Saito , Naoya Hasegawa , Toshihiro Kuriyama , Eiji Umetsu , Kenichi Tanaka , Yosuke Ide
发明人： Masamichi Saito , Naoya Hasegawa , Toshihiro Kuriyama , Eiji Umetsu , Kenichi Tanaka , Yosuke Ide
IPC分类号： G11B527
CPC分类号： B82Y25/00 , B82Y10/00 , G11B2005/3996 , H01F10/3268 , H01F41/325 , Y10T428/1121 , Y10T428/1171
摘要： A longitudinal bias layer is laminated above a free magnetic layer with a nonmagnetic layer provided therebetween so that the magnetization direction of the free magnetic layer is oriented by RKKY interaction with the longitudinal bias layer. The RKKY interaction exerts only between the longitudinal bias layer and the regions of the free magnetic layer which are located directly below both ends D of the longitudinal bias layer. Therefore, a thin film magnetic element can be provided, in which the width dimension of a recess formed in the longitudinal bias layer coincides with the magnetic track width.
摘要翻译：纵向偏置层层叠在自由磁性层之上，其间设有非磁性层，使得自由磁性层的磁化方向取向为与纵向偏置层的RKKY相互作用。 RKKY相互作用仅在纵向偏置层和位于纵向偏置层的两端D正下方的自由磁性层的区域之间发生。因此，可以提供薄膜磁性元件，其中形成在纵向偏置层中的凹部的宽度尺寸与磁道宽度一致。

89. 发明授权

US06639762B2 Spin valve thin-film magnetic device having free magnetic layer in ferrimagnetic state and manufacturing method therefor 失效
标题翻译：具有亚铁磁性状态的自由磁性层的旋转阀薄膜磁性装置及其制造方法
公开(公告)号：US06639762B2
公开(公告)日：2003-10-28
申请号：US09764003
申请日：2001-01-17
申请人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Fumihito Koike , Naoya Hasegawa
发明人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Fumihito Koike , Naoya Hasegawa
IPC分类号： G11B533
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3948 , G11B5/3967 , G11B2005/3996 , H01F10/3218 , H01F10/3263 , H01F10/3268 , H01F41/302 , Y10T29/49034 , Y10T29/49043
摘要： A spin valve thin-film magnetic device is provided, in which the asymmetry can be reduced. The spin valve thin-film magnetic device comprises a free magnetic layer and a first and a second fixed magnetic layer, which are provided respectively at each side of the free magnetic layer in the thickness direction thereof. In the spin valve thin-film magnetic device, the free magnetic layer is composed of a first and a second ferromagnetic free layer, in which the entire free magnetic layer is in a ferrimagnetic state, the first fixed magnetic layer is composed of a first and a second pinned ferromagnetic layer, in which the entire first fixed magnetic layer is in a ferrimagnetic state, and the second fixed magnetic layer is composed of a third and a fourth pinned ferromagnetic layer, in which the entire second fixed magnetic layer is in a ferrimagnetic state. In addition, magnetization directions of the second and the third pinned ferromagnetic layers, which are closer to the free magnetic layer, are antiparallel to each other.
摘要翻译：提供了一种自旋阀薄膜磁性器件，其中可以减小不对称性。自旋阀薄膜磁性装置包括自由磁性层和第一和第二固定磁性层，它们分别设置在自由磁性层的厚度方向的每一侧。在自旋阀薄膜磁性器件中，自由磁性层由第一和第二铁磁性自由层构成，其中整个自由磁性层处于亚铁磁状态，第一固定磁性层由第一和第二铁磁性层组成，第二固定铁磁层，其中整个第一固定磁性层处于亚铁磁状态，并且第二固定磁性层由第三和第四钉扎铁磁层构成，其中整个第二固定磁性层处于铁磁性州。此外，更靠近自由磁性层的第二和第三固定铁磁层的磁化方向彼此反平行。

90. 发明授权

US06608739B1 Spin valve thin film magnetic element having first and second free magnetic layers having antiparallel magnetization directions 失效
标题翻译：具有具有反平行磁化方向的第一和第二自由磁性层的自旋阀薄膜磁性元件
公开(公告)号：US06608739B1
公开(公告)日：2003-08-19
申请号：US09677807
申请日：2000-10-03
申请人： Kenichi Tanaka , Masamichi Saito , Yosuke Ide , Naoya Hasegawa
发明人： Kenichi Tanaka , Masamichi Saito , Yosuke Ide , Naoya Hasegawa
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3163 , G11B5/3903 , H01F10/3268 , H01F41/302
摘要： The present invention provides a spin valve thin film magnetic element in which the sensitivity and the rate of change in resistance can be increased while stably maintaining the ferrimagnetic state of a free magnetic layer. The spin valve thin film magnetic element includes an antiferromagnetic layer, a pinned magnetic layer in which the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer in contact with the pinned magnetic layer, and a free magnetic layer in contact with the nonmagnetic conductive layer. The free magnetic layer includes a nonmagnetic intermediate layer, and first and second free magnetic layers with the nonmagnetic intermediate layer provided therebetween, the thickness of the second free magnetic layer provided on the nonmagnetic conductive layer side being larger than that of the first free magnetic layer. Therefore, the rate of change in resistance of the spin valve thin film magnetic element can be increased, and the spin flopping field of the free magnetic layer can be increased.
摘要翻译：本发明提供一种自旋阀薄膜磁性元件，其中可以在稳定地保持自由磁性层的亚铁磁状态的同时提高电阻的灵敏度和变化率。自旋阀薄膜磁性元件包括反铁磁性层，通过与反铁磁层的交换耦合磁场固定其磁化方向的被钉扎磁性层，与被钉扎的磁性层接触的非磁性导电层，磁性层与非磁性导电层接触。自由磁性层包括非磁性中间层以及设置有非磁性中间层的第一和第二自由磁性层，设置在非磁性导电层侧的第二自由磁性层的厚度大于第一自由磁性层的厚度。因此，能够提高自旋阀薄膜磁性元件的电阻变化率，能够提高自由磁性层的自旋磁场。

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