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    • 81. 发明申请
    • Optical Telescope Sight Combining Dot Sight Mode and Scope Mode
    • 光学望远镜组合点瞄准模式和范围模式
    • US20110099881A1
    • 2011-05-05
    • US12997961
    • 2009-06-18
    • In JungDong Hee Lee
    • In JungDong Hee Lee
    • F41G1/38F41G1/00
    • F41G1/38F41G1/30F41G1/345F41G11/008G02B23/00G02B23/10
    • The present invention relates to an optical device for both a dot sight mode and a scope mode, the optical device including: a dot-sight main body which is formed with a dot sight region where a light source and a reflective mirror are installed to display light emitted from the light source as a dot on an external target, and operates in the dot sight mode; and a scope structure which includes an objective lens and an eyepiece lens to magnify and see the external target, and is rotatable inside the dot-sight main body, the scope mode being selected when the scope structure is rotated and inserted in the dot sight region. With this, there is provided an optical device for both a dot sight mode and a scope mode, in which a scope structure is installed to be retractable inside a dot sight device and thus both the dot sight mode and the scope mode are supported, thereby aiming at an external target through quick mode switching, and there is no need for an additional scope device.
    • 本发明涉及一种用于点瞄准模式和瞄准镜模式的光学装置,该光学装置包括:点阵主体,其形成有点状瞄准区域,其中安装有光源和反射镜以显示 从光源发射的光作为外部目标上的点,并以点瞄准模式工作; 以及包括物镜和目镜的镜片结构,用于放大和看到外部目标,并且可以在点瞄准器主体内旋转,当镜架结构旋转并插入到点瞄准区域中时,选择镜架模式 。 为此,提供了一种用于点瞄准模式和示范模式的光学装置,其中,安装示范结构以在点瞄准装置内部可缩回,因此支持点瞄准模式和作战模式,由此 通过快速模式切换瞄准外部目标,并且不需要附加的示波器装置。
    • 86. 发明申请
    • Methods of fabricating semiconductor devices
    • 制造半导体器件的方法
    • US20100124806A1
    • 2010-05-20
    • US12656172
    • 2010-01-20
    • In-jung Lee
    • In-jung Lee
    • H01L21/8242
    • H01L27/0629H01L21/823481H01L27/1087H01L28/40H01L29/66181
    • A semiconductor device includes a semiconductor substrate that includes first and second regions; first, second, and third insulating layers; a capacitor dielectric layer that includes first and second dielectric layers; a gate insulating layer formed on the first and second regions; a gate formed on the gate insulating layer of the second region; a first capacitor electrode formed on the capacitor dielectric layer; and impurity regions formed in the semiconductor substrate on sides of the gate. The first and second regions include first and second trenches, respectively. The third insulating layer is formed on the second insulating layer, which is formed on the first insulating layer, which is formed on an inner surface of the second trench. The second dielectric layer is formed on the first dielectric layer, which is formed on an inner surface of the first trench.
    • 半导体器件包括:包括第一和第二区域的半导体衬底; 第一,第二和第三绝缘层; 电容器电介质层,其包括第一和第二电介质层; 形成在所述第一和第二区域上的栅极绝缘层; 形成在第二区域的栅极绝缘层上的栅极; 形成在电容器电介质层上的第一电容器电极; 以及形成在栅极侧的半导体衬底中的杂质区。 第一和第二区域分别包括第一和第二沟槽。 第三绝缘层形成在第二绝缘层上,该第二绝缘层形成在形成在第二沟槽的内表面上的第一绝缘层上。 第二电介质层形成在形成在第一沟槽的内表面上的第一电介质层上。
    • 87. 发明授权
    • Socket compatibility layer for TOE
    • TOE的套接字兼容层
    • US07552441B2
    • 2009-06-23
    • US11002623
    • 2004-12-03
    • Eun-Ji LimChei-Yol KimSung Hoon SonSung-In Jung
    • Eun-Ji LimChei-Yol KimSung Hoon SonSung-In Jung
    • G06F3/00G06F9/44G06F15/173
    • H04L69/16H04L69/162
    • There is provided a socket compatibility layer for a TOE in a high quality server system. The socket compatibility layer for a TOE provides a standard socket API to an application program and provides binary-level compatibility so that a networking function of a TOE can be used without modifying the conventional socket application program thereby supporting simultaneous use of a TOE and a general Ethernet-based NIC. In a kernel structure of the Linux operation system, the socket compatibility layer for a TOE is located below a BSD socket layer receiving a socket system call from an application program through a standard socket API, is located above an INET socket layer and a TOE driver to control connection between an upper layer and a lower layer, and transmits the socket system call received from the BSD socket layer to the TOE driver or the INET socket layer according to call contents of the socket system call. The socket compatibility layer for a TOE includes a TOE socket generation module, a virtual TOE socket, a TOE STREAM module unit and a TOE DGRAM module unit.
    • 在高质量的服务器系统中为TOE提供了一个插座兼容层。 TOE的套接字兼容层为应用程序提供了一个标准套接字API,并提供了二进制级的兼容性,从而可以使用TOE的联网功能而无需修改常规套接字应用程序,从而支持同时使用TOE和一般 基于以太网的NIC。 在Linux操作系统的内核结构中,TOE的套接字兼容层位于通过标准套接字API从应用程序接收套接字系统调用的BSD套接字层之下,位于INET套接字层和TOE驱动器的上方 以控制上层和下层之间的连接,并根据套接字系统呼叫的呼叫内容将从BSD套接字层接收的套接字系统呼叫发送到TOE驱动程序或INET套接字层。 TOE的插座兼容层包括TOE插座生成模块,虚拟TOE插座,TOE STREAM模块单元和TOE DGRAM模块单元。
    • 88. 发明申请
    • LOG-BASED FTL AND OPERATING METHOD THEREOF
    • 基于LOG的FTL及其操作方法
    • US20080201518A1
    • 2008-08-21
    • US11675629
    • 2007-02-16
    • Soo-Young KimSung-In Jung
    • Soo-Young KimSung-In Jung
    • G06F12/06
    • G06F12/0246
    • A log-based FTL and an operating method thereof for improving performances of reading and writing operations to increase the lifetime of a flash memory. In the method, when a reading operation for an LBN and an LPN is requested, a PBN and a PPN corresponding to the LBN and the LPN are calculated with reference to a pagemap corresponding to the LBN. A physical page of a physical block corresponding to the PBN and the PPN is accessed so that a reading operation is performed. On the other hand, when a writing operation for the LBN and the LPN is requested, a PBN and a PPN for a free-page of a physical block last assigned for the LBN are calculated with reference to a blockmap. The physical page of the physical block corresponding to the PBN and the PPN is accessed, so that a writing operation is performed. The pagemap stores a PBN and a PPN, and the blockmap stores a PBN list and a PPN.
    • 基于对数的FTL及其操作方法,用于提高读写操作的性能以增加闪速存储器的使用寿命。 在该方法中,当请求LBN和LPN的读取操作时,参照与LBN对应的页面映射来计算与LBN和LPN对应的PBN和PPN。 访问对应于PBN和PPN的物理块的物理页面,从而执行读取操作。 另一方面,当请求对LBN和LPN的写入操作时,参考块映射来计算最后为LBN分配的物理块的自由页面的PBN和PPN。 访问对应于PBN和PPN的物理块的物理页面,从而执行写入操作。 页面映射存储PBN和PPN,并且块映射存储PBN列表和PPN。