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81. 发明授权

US06245591B1 High MTF optical coating for hybrid UFPA's 失效
标题翻译：用于混合UFPA的高MTF光学涂层
公开(公告)号：US06245591B1
公开(公告)日：2001-06-12
申请号：US08788313
申请日：1997-01-24
申请人： Howard R. Beratan , Chih-Chen Cho
发明人： Howard R. Beratan , Chih-Chen Cho
IPC分类号： H01L2100
CPC分类号： G01J5/10 , H01L27/1465 , H01L27/16
摘要： An optical coating for an uncooled focal plane array detector where the optical coating comprises a porous film. The porous film preferably comprises a xerogel.
摘要翻译：一种用于非冷却焦平面阵列检测器的光学涂层，其中光学涂层包括多孔膜。多孔膜优选包含干凝胶。

82. 发明授权

US06214710B1 Method for a semiconductor device having reduced contact resistance and leakage 有权
标题翻译：具有降低的接触电阻和泄漏的半导体器件的方法
公开(公告)号：US06214710B1
公开(公告)日：2001-04-10
申请号：US09207088
申请日：1998-12-07
申请人： Kyung-Ho Park , Chih-Chen Cho , Ming Jang Hwang
发明人： Kyung-Ho Park , Chih-Chen Cho , Ming Jang Hwang
IPC分类号： H01L213205
CPC分类号： H01L29/665 , H01L21/28052 , H01L21/28518
摘要： A method of forming a semiconductor device includes separating a semiconductor gate body from the outer surface of the substrate by a gate insulator layer, forming a conductive drain region in the outer surface of the substrate and spaced apart from the gate conductor body, and forming a conductive source region in the outer surface of the substrate and spaced apart from the gate conductor body opposite the conductive drain region to define a channel region in the substrate disposed inwardly from the gate body and the gate insulator layer. The method also includes depositing a metal buffer layer over the conductive source region and conductive drain region, depositing a metal layer over the metal buffer layer, and reacting the metal layer and metal buffer layer with the conductive source region and conductive drain region to form respective first and second silicide regions.
摘要翻译：形成半导体器件的方法包括：通过栅极绝缘体层将半导体栅极本体与衬底的外表面分离，在衬底的外表面中形成导电漏区，并与栅极导体本体间隔开，形成导电源区域，并且与栅极导体本体相对的导电漏极区域隔开，以限定衬底中的沟道区，该沟道区域从栅极本体和栅极绝缘体层向内设置。该方法还包括在导电源区和导电漏极区上沉积金属缓冲层，在金属缓冲层上沉积金属层，并使金属层和金属缓冲层与导电源区和导电漏区反应形成相应的第一和第二硅化物区域。

83. 发明授权

US06093638A Method of forming an electrical contact in a substrate 有权
标题翻译：在基板中形成电接触的方法
公开(公告)号：US06093638A
公开(公告)日：2000-07-25
申请号：US210063
申请日：1998-12-10
申请人： Chih-Chen Cho , Kyung-Ho Park
发明人： Chih-Chen Cho , Kyung-Ho Park
IPC分类号： C23C16/34 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/28562 , H01L21/76877
摘要： A TiN.sub.x layer is formed by disposing a substrate (18) in a chamber (12). A first reactant gas (40) comprising Ti, a second reactant gas (42) and a third reactant gas (44) comprising N are introduced into the chamber (12). By controlling the ratio of the first, second and third reactant gasses (40, 42, 44), TiN.sub.x is deposited onto a surface (28) of the substrate (18), where x is between zero and one.
摘要翻译：通过将衬底（18）设置在腔室（12）中来形成TiNx层。将包含Ti的第一反应气体（40），包含N的第二反应气体（42）和第三反应气体（44）引入到室（12）中。通过控制第一，第二和第三反应物气体（40,42,44）的比例，将TiNx沉积到衬底（18）的表面（28）上，其中x在0和1之间。

84. 发明授权

US5913145A Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures 失效
标题翻译：用于在高温下形成具有扩散阻挡层的热稳定接触的方法
公开(公告)号：US5913145A
公开(公告)日：1999-06-15
申请号：US920303
申请日：1997-08-28
申请人： Jiong-Ping Lu , Chih-Chen Cho
发明人： Jiong-Ping Lu , Chih-Chen Cho
IPC分类号： H01L21/28 , C23C16/08 , C23C16/16 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76855 , C23C16/08 , C23C16/16 , H01L21/76843 , Y10S438/927
摘要： In order to provide a thermally stable diffusion barrier for a contact, a layer of titanium is formed on the patterned substrate. A layer of tungsten nitride is formed on the titanium layer. After an annealing step, an interfacial layer and a layer of titanium nitride are formed between the substrate and a tungsten layer. These layers provide a diffusion barrier which is more thermally stable than a titanium nitride layer applied directly on the substrate and permits the formation of a contact structures that can withstand subsequent high temperature steps.
摘要翻译：为了提供用于接触的热稳定扩散阻挡层，在图案化衬底上形成钛层。在钛层上形成氮化钨层。在退火步骤之后，在衬底和钨层之间形成界面层和氮化钛层。这些层提供了比直接施加在基底上的氮化钛层更加热稳定的扩散阻挡层，并允许形成能够承受随后的高温步骤的接触结构。

85. 发明授权

US5804508A Method of making a low dielectric constant material for electronics 失效
标题翻译：制造电子材料用低介电常数材料的方法
公开(公告)号：US5804508A
公开(公告)日：1998-09-08
申请号：US735758
申请日：1996-10-23
申请人： Bruce E. Gnade , Chih-Chen Cho , Douglas M. Smith
发明人： Bruce E. Gnade , Chih-Chen Cho , Douglas M. Smith
IPC分类号： C04B38/00 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/768 , H01L23/522 , H01L21/31
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/02362 , H01L21/3121 , H01L21/3122 , H01L21/31695 , H01L21/76801 , H01L21/7682 , H01L21/76834 , H01L2221/1047
摘要： This invention provides a process for making a semiconductor device with reduced capacitance between adjacent conductors. This process can include applying a solution between conductors 24, and then gelling, surface modifying, and drying the solution to form an extremely porous dielectric layer 28. A non-porous dielectric layer 30 may be formed over porous layer 28, which may complete an interlayer dielectric. A novel process for creating the porous dielectric layer is disclosed, which can be completed at vacuum or ambient pressures, yet results in porosity, pore size, and shrinkage of the dielectric during drying comparable to that previously attainable only by drying gels at supercritical pressure.
摘要翻译：本发明提供一种在相邻导体之间制造具有降低的电容的半导体器件的方法。该方法可以包括在导体24之间施加溶液，然后将溶液凝胶化，表面改性和干燥以形成极其多孔的介电层28.多孔介质层30可形成在多孔层28之上，多孔层28可以完成层间电介质。公开了一种用于产生多孔介电层的新方法，其可以在真空或环境压力下完成，但是在干燥期间导致电介质的孔隙率，孔径和收缩相当于仅通过在超临界压力下干燥凝胶可获得的电介质层。

86. 发明授权

US5782997A Aluminum metallization for SiGe devices 失效
标题翻译： SiGe器件的铝金属化
公开(公告)号：US5782997A
公开(公告)日：1998-07-21
申请号：US474290
申请日：1995-06-07
申请人： Chih-Chen Cho , Hung-Yu Liu
发明人： Chih-Chen Cho , Hung-Yu Liu
IPC分类号： C30B23/02 , H01L21/285 , C30B23/06
CPC分类号： H01L21/2855 , C30B23/02 , C30B29/02
摘要： Single crystal aluminum is deposited on SiGe structures to form metal interconnects. Generally, a method of forming single crystal aluminum on Si.sub.(1-X) Ge.sub.X is presented, including the steps of maintaining the substrate at certain temperature (e.g. between 300.degree. C. and 400.degree. C.) and pressure conditions (e.g. below 2.times.10.sup.-9 millibar) while aluminum atoms are deposited by a vacuum evaporation technique. This is apparently the first method of depositing single crystal aluminum on SiGe surfaces. Novel structures are made possible by the invention, including epitaxial layers 34 formed on single crystal aluminum 32 which has been deposited on SiGe 30. Among the advantages made possible by the methods presented are thermal stability and resistance to electromigration.
摘要翻译：单晶铝沉积在SiGe结构上以形成金属互连。通常，提出了在Si（1-X）GeX上形成单晶铝的方法，包括将衬底保持在一定温度（例如300℃至400℃）和压力条件（例如低于2×10 -9毫巴），而铝原子通过真空蒸发技术沉积。这显然是在SiGe表面上沉积单晶铝的第一种方法。通过本发明使得新颖的结构成为可能，包括形成在已经沉积在SiGe 30上的单晶铝32上的外延层34.通过所提出的方法可能的优点是热稳定性和抗电迁移。

87. 发明授权

US5536965A Porous thermal isolation mesas for hybrid uncooled infrared detectors 失效
标题翻译：用于混合非制冷红外探测器的多孔热隔离台面
公开(公告)号：US5536965A
公开(公告)日：1996-07-16
申请号：US479378
申请日：1995-06-07
申请人： Howard R. Beratan , Chih-Chen Cho , Scott R. Summerfelt
发明人： Howard R. Beratan , Chih-Chen Cho , Scott R. Summerfelt
IPC分类号： H01L27/146 , H01L37/02 , H01L31/00 , H01L31/058
CPC分类号： H01L27/1465 , H01L37/02 , Y10T29/49169
摘要： Thermal isolation mesas 36 comprising a porous material 64 are used to thermally insulate sensing integrated circuitry 44 from pixels 34 of an uncooled IR detector hybrid system 30. The porous material 64 is preferably a silicon-dioxide xerogel. The mesas 36 may also comprise a protective film 66.
摘要翻译：包括多孔材料64的隔热台面36用于将感测集成电路44与未经IR的IR检测器混合系统30的像素34热绝缘。多孔材料64优选为二氧化硅干凝胶。台面36还可以包括保护膜66。

88. 发明授权

US5494858A Method for forming porous composites as a low dielectric constant layer with varying porosity distribution electronics applications 失效
标题翻译：用于形成多孔复合材料作为具有不同孔隙分布电子应用的低介电常数层的方法
公开(公告)号：US5494858A
公开(公告)日：1996-02-27
申请号：US255157
申请日：1994-06-07
申请人： Bruce E. Gnade , Chih-Chen Cho , Douglas M. Smith
发明人： Bruce E. Gnade , Chih-Chen Cho , Douglas M. Smith
IPC分类号： C04B38/00 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/469
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/02362 , H01L21/31695 , H01L21/76835 , H01L23/5222 , H01L23/5329 , H01L21/3121 , H01L2221/1047 , H01L2924/0002
摘要： This invention provides a process for making a semiconductor device with reduced capacitance between adjacent conductors. This process can include applying and gelling one or more solutions between and over conductors 24 and drying the wet gel to create at least porous dielectric sublayers 28 and 29. By varying the composition of the solutions, gelling conditions, drying temperature, composition of the solvents in the wet gel, or a combination of these approaches, the porosity of the sublayers may be tailored individually. A non-porous dielectric layer 30 may be formed over porous layer 28, which may complete an interlayer dielectric. A novel process for creating the porous dielectric layer is disclosed, which can be completed at vacuum or ambient pressures, yet results in porosity, pore size, and shrinkage of the dielectric during drying comparable to that previously attainable only by drying gels at supercritical pressure.
摘要翻译：本发明提供一种在相邻导体之间制造具有降低的电容的半导体器件的方法。该方法可以包括在导体24之间和之上施加和凝胶化一种或多种溶液并干燥湿凝胶以产生至少多孔介电子层28和29.通过改变溶液的组成，胶凝条件，干燥温度，溶剂的组成在湿凝胶中，或这些方法的组合，子层的孔隙率可以单独定制。无孔介电层30可以形成在多孔层28之上，多孔层28可以完成层间电介质。公开了一种用于产生多孔介电层的新方法，其可以在真空或环境压力下完成，但是在干燥期间导致电介质的孔隙率，孔径和收缩相当于仅通过在超临界压力下干燥凝胶可获得的电介质层。

89. 发明授权

US5488015A Method of making an interconnect structure with an integrated low density dielectric 失效
标题翻译：制造具有集成低密度电介质的互连结构的方法
公开(公告)号：US5488015A
公开(公告)日：1996-01-30
申请号：US246432
申请日：1994-05-20
申请人： Robert H. Havemann , Shin-Puu Jeng , Bruce E. Gnade , Chih-Chen Cho
发明人： Robert H. Havemann , Shin-Puu Jeng , Bruce E. Gnade , Chih-Chen Cho
IPC分类号： H01L21/314 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/528 , H01L23/532 , H01L21/441 , H01L21/469
CPC分类号： H01L21/02362 , H01L21/02123 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02359 , H01L21/31695 , H01L21/7682 , H01L21/76829 , H01L21/76834 , H01L23/5222 , H01L23/5226 , H01L23/5283 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10S148/043 , Y10S148/118
摘要： This invention provides a semiconductor device and process for making the same with dramatically reduced capacitance between adjacent conductors and an interlayer dielectric construction which emphasizes mechanical strength, etch compatibility, and good heat transfer. This process can include applying a solution between conductors 24, and then gelling, surface modifying, and drying the solution to form an extremely porous dielectric layer 28. A non-porous dielectric layer 30 may be formed over porous layer 28, which may complete an interlayer dielectric and provide mechanical strength, heat transfer, and a solid layer for via etch. A novel process for creating the porous dielectric layer is disclosed, which can be completed at vacuum or ambient pressures, yet results in porosity, pore size, and shrinkage of the dielectric during drying comparable to that previously attainable only by drying gels at supercritical pressure.
摘要翻译：本发明提供了一种半导体器件及其制造方法，其显着降低了相邻导体之间的电容，以及强调机械强度，蚀刻兼容性和良好热传递的层间电介质结构。该方法可以包括在导体24之间施加溶液，然后将溶液凝胶化，表面改性和干燥以形成极其多孔的介电层28.多孔介质层30可形成在多孔层28之上，多孔层28可以完成层间电介质，并提供机械强度，热传递和用于通孔蚀刻的固体层。公开了一种用于产生多孔介电层的新方法，其可以在真空或环境压力下完成，但是在干燥期间导致电介质的孔隙率，孔径和收缩相当于仅通过在超临界压力下干燥凝胶可获得的电介质层。

90. 发明授权

US5470802A Method of making a semiconductor device using a low dielectric constant material 失效
标题翻译：使用低介电常数材料制造半导体器件的方法
公开(公告)号：US5470802A
公开(公告)日：1995-11-28
申请号：US247195
申请日：1994-05-20
申请人： Bruce E. Gnade , Chih-Chen Cho , Douglas M. Smith
发明人： Bruce E. Gnade , Chih-Chen Cho , Douglas M. Smith
IPC分类号： C04B38/00 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/768 , H01L23/522 , H01L21/02
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/02362 , H01L21/3121 , H01L21/3122 , H01L21/31695 , H01L21/76801 , H01L21/7682 , H01L21/76834 , H01L2221/1047
摘要： This invention provides a process for making a semiconductor device with reduced capacitance between adjacent conductors. This process can include applying a solution between conductors 24, and then gelling, surface modifying, and drying the solution to form an extremely porous dielectric layer 28. A non-porous dielectric layer 30 may be formed over porous layer 28, which may complete an interlayer dielectric. A novel process for creating the porous dielectric layer is disclosed, which can be completed at vacuum or ambient pressures, yet results in porosity, pore size, and shrinkage of the dielectric during drying comparable to that previously attainable only by drying gels at supercritical pressure.
摘要翻译：本发明提供一种在相邻导体之间制造具有降低的电容的半导体器件的方法。该方法可以包括在导体24之间施加溶液，然后将溶液凝胶化，表面改性和干燥以形成极其多孔的介电层28.多孔介质层30可形成在多孔层28之上，多孔层28可以完成层间电介质。公开了一种用于产生多孔介电层的新方法，其可以在真空或环境压力下完成，但是在干燥期间导致电介质的孔隙率，孔径和收缩相当于仅通过在超临界压力下干燥凝胶可获得的电介质层。

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