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81. 发明申请

US20050059258A1 Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same 有权
标题翻译：具有改善SiCOH电介质界面强度的结构及其制备方法
公开(公告)号：US20050059258A1
公开(公告)日：2005-03-17
申请号：US10662022
申请日：2003-09-12
申请人： Daniel Edelstein , Alfred Grill , Vishnubhai Patel , Darryl Restaino
发明人： Daniel Edelstein , Alfred Grill , Vishnubhai Patel , Darryl Restaino
IPC分类号： H01L21/312 , H01L21/316 , H01L21/768 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02274 , H01L21/02315 , H01L21/3122 , H01L21/31633 , H01L21/76826 , H01L21/76832 , H01L21/76834
摘要： A semiconductor device structure and method for manufacture includes a substrate having a top first layer; a second thin transition layer located on top of the first layer; and, a third layer located on top of the transition layer, wherein the second thin transition layer provides strong adhesion and cohesive strength between the first and third layers of the structure. Additionally, a semiconductor device structure and method for manufacture includes an insulating structure comprising a multitude of dielectric and conductive layers with respective transition bonding layers disposed to enhance interfacial strength among the different layers. Further, an electronic device structure incorporates layers of insulating and conductive materials as intralevel or interlevel dielectrics in a back-end-of-the-line (“BEOL”) wiring structure in which the interfacial strength between different pairs of dielectric films is enhanced by a thin intermediate transition bonding layer.
摘要翻译：半导体器件结构和制造方法包括具有顶部第一层的衬底; 位于所述第一层顶部的第二薄过渡层; 以及位于所述过渡层顶部的第三层，其中所述第二薄过渡层在所述结构的所述第一和第三层之间提供强粘合力和内聚强度。此外，半导体器件结构和制造方法包括绝缘结构，其包括多个介电层和导电层，其中设置有各自的过渡键合层以增强不同层之间的界面强度。此外，电子器件结构包括绝缘和导电材料层，作为后端线（“BEOL”）布线结构中的层间或层间电介质，其中不同对的介电膜之间的界面强度由薄的中间过渡粘合层。

82. 发明授权

US06441491B1 Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same 有权
标题翻译：超低介电常数材料作为半导体器件中的层间或层间电介质和含有其的电子器件
公开(公告)号：US06441491B1
公开(公告)日：2002-08-27
申请号：US09769089
申请日：2001-01-25
申请人： Alfred Grill , David R. Medeiros , Vishnubhai V. Patel
发明人： Alfred Grill , David R. Medeiros , Vishnubhai V. Patel
IPC分类号： H01L2348
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31633 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcyclotetrasiloxane and cyclopentene oxide.
摘要翻译：公开了一种使用等离子体增强化学气相沉积（“PECVD”）工艺在平行板化学气相沉积工艺中制造包含Si，C，O和H原子的热稳定超低介电常数膜的方法。还公开了通过该方法制备的包含热稳定的超低介电常数材料的绝缘层的电子器件。为了制造热稳定的超低介电常数膜，使用特定的前体材料，例如环状硅氧烷和含有环结构的有机分子，例如四甲基环四硅氧烷和环戊烯氧化物。

83. 发明授权

US06388285B1 Feram cell with internal oxygen source and method of oxygen release 失效
标题翻译：具有内氧源的Feram电池和释氧方法
公开(公告)号：US06388285B1
公开(公告)日：2002-05-14
申请号：US09325857
申请日：1999-06-04
申请人： Charles Thomas Black , Cyril Cabral, Jr. , Alfred Grill , Deborah Ann Neumayer , Wilbur David Pricer , Katherine Lynn Saenger , Thomas McCarroll Shaw
发明人： Charles Thomas Black , Cyril Cabral, Jr. , Alfred Grill , Deborah Ann Neumayer , Wilbur David Pricer , Katherine Lynn Saenger , Thomas McCarroll Shaw
IPC分类号： H01L29788
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： An integrated ferroelectric/CMOS structure which comprises at least a ferroelectric material, a pair of electrodes in contact with opposite surfaces of the ferroelectric material, where the electrodes do not decompose at deposition or annealing, and an oxygen source layer in contact with at least one of said electrodes, said oxygen source layer being a metal oxide which at least partially decomposes during deposition and/or subsequent processing is provided as well as a method of fabricating the same.
摘要翻译：一种集成铁电/ CMOS结构，其至少包括铁电材料，与所述铁电材料的相对表面接触的一对电极，其中所述电极在沉积或退火时不分解，以及氧源层与至少一个的所述电极，所述氧源层是在沉积期间和/或后续处理中至少部分分解的金属氧化物以及其制造方法。

84. 发明授权

US06333202B1 Flip FERAM cell and method to form same 失效
标题翻译：翻转FERAM细胞和方法形成相同
公开(公告)号：US06333202B1
公开(公告)日：2001-12-25
申请号：US09383744
申请日：1999-08-26
申请人： James William Adkisson , Charles Thomas Black , Alfred Grill , Randy William Mann , Deborah Ann Neumayer , Wilbur David Pricer , Katherine Lynn Saenger , Thomas McCarroll Shaw
发明人： James William Adkisson , Charles Thomas Black , Alfred Grill , Randy William Mann , Deborah Ann Neumayer , Wilbur David Pricer , Katherine Lynn Saenger , Thomas McCarroll Shaw
IPC分类号： H01L2100
CPC分类号： H01L28/55 , H01L27/0629 , H01L27/11502 , H01L27/11507 , Y10S438/977
摘要： A method of forming an integrated ferroelectric/CMOS structure which effectively separates incompatible high temperature deposition and annealing processes is provided. The method of the present invention includes separately forming a CMOS structure and a ferroelectric delivery wafer. These separate structures are then brought into contact with each and the ferroelectric film of the delivery wafer is bonded to the upper conductive electrode layer of the CMOS structure by using a low temperature anneal step. A portion of the delivery wafer is then removed providing an integrated FE/CMOS structure wherein the ferroelectric capacitor is formed on top of the CMOS structure. The capacitor is in contact with the transistor of the CMOS structure through all the wiring levels of the CMOS structure.
摘要翻译：提供了一种形成集成的铁电/ CMOS结构的方法，其有效地分离不兼容的高温沉积和退火工艺。本发明的方法包括分别形成CMOS结构和铁电输送晶片。然后使这些分离的结构与每个结构接触，并且通过使用低温退火步骤将输送晶片的铁电体膜结合到CMOS结构的上导电电极层。然后去除输送晶片的一部分，提供集成的FE / CMOS结构，其中铁电电容器形成在CMOS结构的顶部。电容器通过CMOS结构的所有布线级与CMOS结构的晶体管接触。

85. 发明授权

US5945155A Low dielectric constant amorphous fluorinated carbon and method of preparation 失效
公开(公告)号：US5945155A
公开(公告)日：1999-08-31
申请号：US972993
申请日：1997-11-19
申请人： Alfred Grill , Vishnubhai Vitthalbhai Patel
发明人： Alfred Grill , Vishnubhai Vitthalbhai Patel
IPC分类号： C01B31/00 , C07C22/08 , C07C25/13 , C23C14/06 , C23C16/27 , C23C16/50 , H01B3/00 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , C23C16/00
CPC分类号： H01L21/312 , H01L21/0212 , H01L21/02274 , H01L21/3146 , H01L21/76801 , H01L21/76807 , Y10T428/24802 , Y10T428/30 , Y10T428/31678
摘要： An amorphous fluorinated carbon film for use as a dielectric insulating layer in electrical devices is formed from a fluorinated cyclic hydrocarbon precursor. The precursor may be selected from the group consisting of hexafluorobenzene, 1,2-diethynyltetrafluorobenzene and 1,4-bis(trifluoromethyl) benzene. The film is deposited by a radiation or beam assisted deposition technique such as an ion beam assisted deposition method, a laser assisted deposition method, or a plasma assisted chemical vapor deposition method. The film is thermally stable in non-oxidizing environment at temperatures up to 400.degree. C. and has a low dielectric constant of less than 3.0. The film can be suitably used as an insulator for spacing apart conductors in an interconnect structure.

86. 发明授权

US5942769A Low dielectric constant amorphous fluorinated carbon and method of preparation 失效
标题翻译：低介电常数无定形氟化碳及其制备方法
公开(公告)号：US5942769A
公开(公告)日：1999-08-24
申请号：US974081
申请日：1997-11-19
申请人： Alfred Grill , Vishnubhai Vitthalbhai Patel
发明人： Alfred Grill , Vishnubhai Vitthalbhai Patel
IPC分类号： C01B31/00 , C07C22/08 , C07C25/13 , C23C14/06 , C23C16/27 , C23C16/50 , H01B3/00 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , H01L31/0312
CPC分类号： H01L21/312 , H01L21/0212 , H01L21/02274 , H01L21/3146 , H01L21/76801 , H01L21/76807 , Y10T428/24802 , Y10T428/30 , Y10T428/31678
摘要： An amorphous fluorinated carbon film for use as a dielectric insulating layer in electrical devices is formed from a fluorinated cyclic hydrocarbon precursor. The precursor may be selected from the group consisting of hexafluorobenzene, 1,2-diethynyltetrafluorobenzene and 1,4-bis(trifluoromethyl) benzene. The film is deposited by a radiation or beam assisted deposition technique such as an ion beam assisted deposition method, a laser assisted deposition method, or a plasma assisted chemical vapor deposition method. The film is thermally stable in non-oxidizing environment at temperatures up to 400.degree. C. and has a low dielectric constant of less than 3.0. The film can be suitably used as an insulator for spacing apart conductors in an interconnect structure.
摘要翻译：用作电气装置中的介电绝缘层的无定形氟化碳膜由氟化环状烃前体形成。前体可以选自六氟苯，1,2-二乙炔基四氟苯和1,4-双（三氟甲基）苯。通过辐射或束辅助沉积技术如离子束辅助沉积法，激光辅助沉积法或等离子体辅助化学气相沉积法沉积膜。该膜在高达400℃的非氧化环境下是热稳定的，并具有小于3.0的低介电常数。该膜可以适用于互连结构中用于间隔开导体的绝缘体。

87. 发明授权

US5914851A Isolated sidewall capacitor 失效
公开(公告)号：US5914851A
公开(公告)日：1999-06-22
申请号：US577178
申请日：1995-12-22
申请人： Katherine Lynn Saenger , James H. Comfort , Alfred Grill , David Edward Kotecki
发明人： Katherine Lynn Saenger , James H. Comfort , Alfred Grill , David Edward Kotecki
IPC分类号： H01L21/02 , H01L21/8242 , H01G4/06 , H01G4/002 , H01G4/008
CPC分类号： H01L28/55 , H01L27/10852 , Y10T29/435
摘要： A capacitor structure is provided, with a first conductor on top of a substrate, a first non-conductor on top of and substantially in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein, a non-conductive sidewall spacer formed in the first opening, the non-conductive sidewall spacer having a second opening formed therein, and a second conductor formed in the second opening.

88. 发明授权

US5757612A Structure and fabrication method for non-planar memory elements 失效
标题翻译：非平面记忆元件的结构和制造方法
公开(公告)号：US5757612A
公开(公告)日：1998-05-26
申请号：US636624
申请日：1996-04-23
申请人： Raul Edmundo Acosta , James Hartfiel Comfort , Alfred Grill , David Edward Kotecki , Katherine Lynn Saenger
发明人： Raul Edmundo Acosta , James Hartfiel Comfort , Alfred Grill , David Edward Kotecki , Katherine Lynn Saenger
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01G4/06
CPC分类号： H01L27/10852 , H01L28/55
摘要： Structures for memory cell applications, including capacitors for DRAM and ferroelectric memory cells from FRAM, whose method of manufacture consists of depositing a ferroelectric or high-epsilon dielectric material to completely fill a cavity whose geometrical width is the sole determinant of the thickness of the electrically active portion of the ferroelectric or high-epsilon dielectric layer in the final device. In the preferred embodiment, the cavity into which the dielectric is deposited is defined by the gap between the plate and stack electrodes which are deposited and patterned in a through-mask plating step prior to the dielectric deposition.
摘要翻译：用于存储器单元应用的结构，包括用于DRAM的电容器和来自FRAM的铁电存储器单元，其制造方法包括沉积铁电体或高ε电介质材料以完全填充空腔，其几何宽度是电学厚度的唯一决定因素最终装置中铁电或高ε电介质层的有效部分。在优选实施例中，沉积电介质的空腔由在电介质沉积之前的通过掩模镀层步骤中沉积和图案化的板和堆叠电极之间的间隙限定。

89. 发明授权

US5674355A Diamond-like carbon for use in VLSI and ULSI interconnect systems 失效
公开(公告)号：US5674355A
公开(公告)日：1997-10-07
申请号：US483682
申请日：1995-06-07
申请人： Stephan Alan Cohen , Daniel Charles Edelstein , Alfred Grill , Jurij Rostyslav Paraszczak , Vishnubhai Vitthalbhai Patel
发明人： Stephan Alan Cohen , Daniel Charles Edelstein , Alfred Grill , Jurij Rostyslav Paraszczak , Vishnubhai Vitthalbhai Patel
IPC分类号： H01L21/8238 , H01L21/314 , H01L21/768 , H01L23/522 , H01L23/532 , H01L27/092 , H01L21/306
CPC分类号： H01L21/3146 , H01L21/02115 , H01L21/0212 , H01L21/02274 , H01L23/5329 , H01L2924/0002
摘要： The present invention relates to semiconductor devices comprising as one of their structural components diamond-like carbon as an insulator for spacing apart one or more levels of a conductor on an integrated circuit chip. The present invention also relates to a method for forming an integrated structure and to the integrated structure produced therefrom. The present invention further provides a method for selectively ion etching a diamond-like carbon layer from a substrate containing such a layer.

90. 发明授权

US5663854A Prebent ceramic suspension 失效
标题翻译：预浸陶瓷悬浮液
公开(公告)号：US5663854A
公开(公告)日：1997-09-02
申请号：US474616
申请日：1995-06-07
申请人： Alfred Grill , Michael Anthony Moser , Vishnubhai Vitthalbhai Patel , Clinton Davis Snyder , Celia E. Yeack-Scranton, deceased
发明人： Alfred Grill , Michael Anthony Moser , Vishnubhai Vitthalbhai Patel , Clinton Davis Snyder , Celia E. Yeack-Scranton, deceased
IPC分类号： G11B5/48
CPC分类号： G11B5/4833
摘要： The present invention provides a prebent ceramic suspension which includes a ceramic load beam which is bent by a stress patch. With thin film techniques the stress patch is formed on top of the load beam. In the preferred embodiment the patch is amorphous hydrogenated diamond-like carbon. When the suspension is on a wafer the carbon patch exerts a compressive stress on a top surface of the load beam just under the patch. When the suspension is released from the wafer the compressive patch exerts tensile forces on the top surface of the load beam causing an end of the load beam to bend toward the wafer. The amount of bending of the suspension can be accurately controlled by the cross sections of the load beam and the patch as well as the lateral dimensions of the patch. Further control can be achieved by controlling the hydrogen, nitrogen and other additive components of the carbon patch. After fabrication bending can be lessened by machining portions of the patch with a laser beam to effectively negate the stress of these portions. Still further, the patch can be laterally configured so that the suspension forms an arc when preloaded on a disk. During fabrication various layers can be formed by thin film deposition to form an integrated magnetic head-slider-suspension. A pair of prebent ceramic suspensions can be preloaded on adjacent magnetic disks by a single actuator arm.
摘要翻译：本发明提供了一种前置陶瓷悬架，其包括由应力块弯曲的陶瓷载荷梁。利用薄膜技术，应力贴片形成在负载梁的顶部。在优选的实施方案中，贴剂是无定形氢化金刚石样碳。当悬浮液在晶片上时，碳贴片在正好在补片下方的负载梁的顶表面上施加压应力。当悬浮液从晶片释放时，压片在载荷梁的顶表面上施加拉力，使载荷梁的一端向晶片弯曲。可以通过负载梁和贴片的横截面以及贴片的横向尺寸精确地控制悬架的弯曲量。通过控制碳补片的氢，氮和其他添加剂组分可以进一步控制。通过利用激光束加工贴片的部分可以减少制造弯曲之后，有效地消除这些部分的应力。此外，补片可以横向配置，使得悬挂在预先装载在盘上时形成弧。在制造期间，可以通过薄膜沉积形成各种层以形成集成的磁头 - 滑块 - 悬架。一对预制陶瓷悬架可以通过单个执行器臂预载在相邻的磁盘上。

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