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    • 81. 发明授权
    • Selective etch for uniform metal trace exposure and milling using focused ion beam system
    • 使用聚焦离子束系统进行均匀金属痕迹曝光和研磨的选择性蚀刻
    • US07029595B1
    • 2006-04-18
    • US10226802
    • 2002-08-21
    • Xia (Susan) LiEugene A. DeleniaRosalinda M. Ring
    • Xia (Susan) LiEugene A. DeleniaRosalinda M. Ring
    • H01L21/00
    • H01L21/31138H01L21/31116H01L21/67075
    • A system and method for exposing and/or milling a copper metallization layer disposed in dielectric that may have an overlying polyimide layer preferably by use of a FIB machine system used for exposing/milling aluminum metallization layers is disclosed. The method includes using a gas assisted (GAS) system for exposing a portion of a copper metal trace disposed in a dielectric and includes the step of removing a portion of the dielectric overlying the portion of the metal trace using the GAS system activated with a dielectric selective chemical that does not have a significant spontaneous (non ion-beam induced) reaction with the metal trace. The system includes a focused ion beam (FIB) machine for exposing/milling a portion of a metal trace disposed in a dielectric substrate wherein the metal trace is copper.
    • 公开了一种用于暴露和/或研磨设置在电介质中的铜金属层的系统和方法,其优选地可以通过使用用于暴露/研磨铝金属化层的FIB机器系统而具有上覆的聚酰亚胺层。 该方法包括使用气体辅助(GAS)系统来暴露设置在电介质中的铜金属迹线的一部分,并且包括使用由电介质激活的GAS系统去除部分金属迹线的部分的电介质的步骤 选择性化学物质不会与金属痕迹发生显着的自发(非离子束诱导)反应。 该系统包括聚焦离子束(FIB)机器,用于暴露/研磨设置在电介质基底中的金属迹线的一部分,其中金属迹线是铜。
    • 87. 发明授权
    • Interleaved VCO with body voltage frequency range control
    • 交错VCO与车身电压频率范围控制
    • US07002420B2
    • 2006-02-21
    • US10763093
    • 2004-01-22
    • Hung C. Ngo
    • Hung C. Ngo
    • H03B27/00
    • H03K3/0315
    • An interleaved VCO is configured using a ring oscillator with voltage controlled feedforward inverting stages coupled around the inverting stages making up the basic ring oscillator to enable the frequency of the ring oscillator to be voltage controlled. The feedforward inverting stages comprise a complementary inverter stage and a voltage controlled transfer gate. Complementary control voltages are coupled to the gates of the complementary transfer gate FET devices. Likewise, the complementary control voltages are coupled to the corresponding body of the FET devices in the transfer gate and in the inverting stage. The complementary control voltages may also be connected to the body of the complementary FET devices in the inverting stages making up the basic ring oscillator. This allows the frequency range of the VCO to be extended without having to switch the feedforward paths into an out of the circuit.
    • 使用环形振荡器配置交错VCO,该环形振荡器具有耦合在构成基本环形振荡器的反相级周围的压控前馈反相级,以使环形振荡器的频率能够被电压控制。 前馈反相级包括互补反相器级和压控传输门。 互补控制电压耦合到互补转移栅极FET器件的栅极。 同样,互补控制电压耦合到传输门和反相级中的FET器件的相应体。 互补控制电压也可以连接到构成基本环形振荡器的反相级中的互补FET器件的主体。 这允许VCO的频率范围扩展,而不必将前馈路径切换到电路外。
    • 89. 发明授权
    • Mechanism to strip LARQ header and regenerate FCS to support sleep mode wake up
    • 剥离LARQ标题并再生FCS以支持睡眠模式唤醒的机制
    • US06996124B1
    • 2006-02-07
    • US09816706
    • 2001-03-23
    • Peter Ka-Fai Chow
    • Peter Ka-Fai Chow
    • H04J3/16
    • H04L1/0063H04L29/06H04L69/22H04L69/324
    • The present invention provides a method for supporting sleep mode wake up in a home phone line network. The method includes: detecting a limited automatic repeat request (LARQ) header in a frame; stripping the LARQ header and a frame check sequence (FCS) in the frame; recalculating the FCS for the stripped frame; and adding the recalculated FCS to the stripped frame. The method strips the LARQ header from a HPNA frame before it is sent to an Ethernet controller. By stripping the LARQ header, the Ethernet controller will correctly find the set byte location for the wake pattern and attempts to match the bit pattern with the wake pattern. In this manner, sleep mode wake up is supported.
    • 本发明提供一种用于在家用电话线路网络中支持睡眠模式唤醒的方法。 该方法包括:检测帧中的有限自动重复请求(LARQ)报头; 剥离帧中的LARQ头和帧校验序列(FCS); 重新计算剥离框架的FCS; 并将重新计算的FCS添加到剥离的框架中。 该方法在发送到以太网控制器之前,从HPNA帧中剥离LARQ报头。 通过剥离LARQ标头,以太网控制器将正确找到唤醒模式的设置字节位置,并尝试将位模式与唤醒模式相匹配。 以这种方式,支持睡眠模式唤醒。