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81. 发明申请

US20020178795A1 Viscoelasticity measuring device 失效
标题翻译：粘弹性测量装置
公开(公告)号：US20020178795A1
公开(公告)日：2002-12-05
申请号：US10055893
申请日：2002-01-28
申请人： TOSHIBA CERAMICS CO., LTD.
发明人： Hiromichi Isogai , Katsuyoshi Kojima , Takayuki Masunaga
IPC分类号： G01N011/10
CPC分类号： G01N3/56 , G01N2203/0071 , G01N2203/0085 , G01N2203/0094
摘要： The invention provides a viscoelasticity measuring device which is capable of imparting a desired displacement profile to a sample under conditions close to that of actual use. The viscoelasticity measuring device is composed of a presser to impart displacements to a sample; a rod to convey said displacements to said presser; a control jig kept in contact with an upper end portion of said rod and adapted to move to impart a desired displacement to said rod; a load cell which detects a load exerted to the sample to detect a stress generated in the sample; and a displacement sensor to detect the displacement in said sample; said displacements imparted of the sample being defined in accordance with a configuration and a moving speed of said control jig.
摘要翻译：本发明提供了一种粘弹性测量装置，该装置能够在接近于实际使用的条件下将样品赋予期望的位移曲线。粘弹性测量装置由将压力赋予样品的压头构成; 用于将所述位移传送到所述压脚的杆; 控制夹具与所述杆的上端部分保持接触并且适于移动以赋予所述杆所需的位移; 负载传感器，其检测施加到样品的负载以检测在样品中产生的应力; 以及位移传感器，用于检测所述样品中的位移; 所述根据所述控制夹具的构造和移动速度限定样品的位移。

82. 发明申请

US20020023919A1 Fluid heating apparatus 有权
标题翻译：流体加热装置
公开(公告)号：US20020023919A1
公开(公告)日：2002-02-28
申请号：US09819702
申请日：2001-03-29
申请人： TOSHIBA CERAMICS CO., LTD.
发明人： Eiichi Toya , Tomio Konn , Tomohiro Nagata , Sunao Seko , Takanori Saito , Kazutoshi Miura , Harunari Hasegawa , Joji Hoshi , Katsutoshi Ishii
IPC分类号： F24H001/10 , H05B003/44
CPC分类号： H05B3/44 , H05B3/42 , H05B3/46 , H05B2203/022
摘要： The fluid heating apparatus, in accordance with the present invention, developed to solve the technological problems described above is characterized by comprising at least a heating tube heating fluid to be supplied from fluid supply source, a heater section spirally formed on an outer periphery of the heating tube and a housing accommodating the heating tube and the heater section, wherein the heater section comprises a carbon wire heating element and a quartz glass tube in which the carbon wire heating element is enclosed.
摘要翻译：根据本发明开发的用于解决上述技术问题的流体加热装置的特征在于至少包括从流体供应源供应的加热管加热流体，螺旋地形成在流体供应源的外周上的加热器部分加热管和容纳加热管和加热器部分的壳体，其中加热器部分包括碳丝加热元件和封闭碳丝加热元件的石英玻璃管。

83. 发明申请

US20010054376A1 Single crystal pulling apparatus and pulling method 有权
标题翻译：单晶拉拔装置及拉拔方法
公开(公告)号：US20010054376A1
公开(公告)日：2001-12-27
申请号：US09883955
申请日：2001-06-20
申请人： TOSHIBA CERAMICS CO., LTD.
发明人： Hiroyuki Miura , Yasuyuki Iwata , Shinsuke Kondoh
IPC分类号： C30B015/00 , C30B021/06 , C30B027/02 , C30B028/10 , C30B030/04
CPC分类号： C30B15/20
摘要： A single crystal pulling apparatus comprising, a laser unit 46 emitting a beam with a wavelength of 550 nm or less to form a spot on the surface of said melt, a spot camera 47 capturing the spot to produce electrical image signals corresponding thereto, an image processor 50 processing the electrical image signals to produce image data, and a control unit 49 receiving the image data and calculating a current melt level so that a crucible shaft lift 8 moves a crucible shaft up and down to adjust the melt level in accordance with the predetermined melt level.
摘要翻译：一种单晶拉制装置，包括：发射波长为550nm以下的光束的激光单元46，以在所述熔体的表面上形成点;拍摄所述光斑以产生与其对应的电图像信号的光点照相机47;图像处理器50处理电图像信号以产生图像数据，以及控制单元49，其接收图像数据并计算当前的熔融水平，使得坩埚轴升降机8上下移动坩埚轴，以根据预定熔融度。

84. 发明授权

US6066579A Hydrogen heat treatment method of silicon wafers using a high-purity inert substitution gas 失效
标题翻译：使用高纯度惰性取代气体的硅晶片的氢热处理方法
公开(公告)号：US6066579A
公开(公告)日：2000-05-23
申请号：US781026
申请日：1997-01-09
申请人： Junichi Matsushita , Jun Yoshikawa , Masayuki Sanada , Tatsuya Shimizu
发明人： Junichi Matsushita , Jun Yoshikawa , Masayuki Sanada , Tatsuya Shimizu
IPC分类号： H01L21/322 , H01L21/324
CPC分类号： H01L21/3225 , H01L21/324 , H01L21/3247 , Y10S438/913
摘要： A heat treatment is performed in a hydrogen-gas containing atmosphere. A high-purity inert gas having a water content of not more than 2.57 ppm is used as a substitution gas for replacing a wafer-input air atmosphere and for replacing the hydrogen-gas containing atmosphere after the heat treatment.
摘要翻译：在含氢气气氛中进行热处理。使用含水量不大于2.57ppm的高纯度惰性气体作为置换气体，用于替换晶片输入空气气氛，并在热处理后更换含氢气体的气氛。

85. 发明授权

US5992711A Integrated submerged entry nozzle and its manufacture 失效
标题翻译：集成浸入式喷嘴及其制造
公开(公告)号：US5992711A
公开(公告)日：1999-11-30
申请号：US64009
申请日：1998-04-22
申请人： Yoichiro Mochizuki , Tetsuro Fushimi , Etsuhiro Hasebe , Moriki Hashio , Toshihiko Murakami , Sei Hiraki
发明人： Yoichiro Mochizuki , Tetsuro Fushimi , Etsuhiro Hasebe , Moriki Hashio , Toshihiko Murakami , Sei Hiraki
IPC分类号： B22D41/50 , B22D41/52 , B22D41/08
CPC分类号： B22D41/50 , B22D41/52
摘要： An integrated submerged entry nozzle for thin slab continuous casting has a plate member 12 corresponding to the lower plate of a slide gate and a nozzle member 11 having a flat molten steel passage section in the part to be submerged into molten steel of at least the tip, the both 11. 12 being integrated together by the use of an organic adhesive. The plate member 12 and the nozzle member 11 are separately formed followed by baking or firing, the both 11, 12 are adhered together by the use of an organic adhesive, the adhesive is dried, the outside is covered with a shell, and refractory mortar is filled in the space. Thereafter, a refractory ring 28 is adhered in such a manner as to cover the inside of the adhesive joint part followed by drying.
摘要翻译：用于薄板连续铸造的集成浸入式喷嘴具有对应于滑动门的下板的板构件12和在该部分中具有平坦的钢水通道部的喷嘴构件11，该部分将被浸入至少尖端的钢水中，这两个11.12通过使用有机粘合剂整合在一起。板构件12和喷嘴构件11分开形成，然后烘烤或烧制，两者11,12通过使用有机粘合剂粘合在一起，粘合剂被干燥，外面被壳覆盖，并且耐火砂浆充满了空间。此后，以覆盖粘合剂接合部的内部然后干燥的方式粘合耐火环28。

86. 发明授权

US5961874A Flat formed submerged entry nozzle for continuous casting of steel 失效
标题翻译：用于连续铸钢的扁平成形浸入式喷嘴
公开(公告)号：US5961874A
公开(公告)日：1999-10-05
申请号：US45869
申请日：1998-03-23
申请人： Etsuhiro Hasebe , Tetsuro Fushimi , Tatsuya Shimoda , Yoichiro Mochizuki , Tadasu Takigawa , Toshihiko Murakami , Sei Hiraki
发明人： Etsuhiro Hasebe , Tetsuro Fushimi , Tatsuya Shimoda , Yoichiro Mochizuki , Tadasu Takigawa , Toshihiko Murakami , Sei Hiraki
IPC分类号： B22D11/10 , B22D41/50
CPC分类号： B22D41/50
摘要： In a flat casting nozzle 10 having a taper 13, the position of the terminal end 14 of the taper 13 formed on the long edge side and the position of the terminal end 17 of a taper 16 formed on the short edge side are mutually shifted.
摘要翻译：在具有锥形13的扁平铸造喷嘴10中，形成在长边缘的锥形13的终端14的位置和形成在短边侧的锥形16的终端17的位置相互偏移。

87. 发明授权

US5849597A Treatment apparatus for high-precision analysis of impurities in silicic material 失效
标题翻译：用于高精度分析硅材料杂质的处理装置
公开(公告)号：US5849597A
公开(公告)日：1998-12-15
申请号：US769128
申请日：1996-12-18
申请人： Fumio Tokuoka , Kazuhiko Shimanuki
发明人： Fumio Tokuoka , Kazuhiko Shimanuki
IPC分类号： G01N1/32 , G01N33/20 , G01N1/00 , G01N33/00 , B01D00/00
CPC分类号： G01N33/20 , G01N1/32 , Y10S436/807 , Y10T436/25125
摘要： A treatment apparatus for analyzing the impurities in silicic material with high precision, includes a container having an inner space in which at least one analysis sample container and a sample decomposing solution are accommodated. The container is divided into a lid body and a lower body, each of the lid body and the lower body being opened at the division surface side thereof to form an open end and being closed at the surface side opposite to the division surface side to form a close end thereof. The inner peripheral surface of the open end of the lower body is formed in a stepwise shape so that the analysis sample container is disposed to be spaced from the surface of the decomposing solution which is stocked in the lower body, and the inner peripheral surfaces of the lid body and the lower body are smoothly continuously threadily engaged with each other through abutment faces thereof to keep the container in an appropriate hermetic level. Through the analysis process using the apparatus, the impurities contained in silicic materials used for semiconductor industries in which integration techniques are remarkably developed can be quantitatively analyzed in the order of ppt to obtain silicic products having high reliability.
摘要翻译：一种高精度地分析硅质材料中的杂质的处理装置，包括具有至少一个分析用样品容器和样品分解溶液的内部空间的容器。容器分为盖体和下体，盖体和下体各自在分割面侧开口，形成开口端，与分割面侧相反的表面侧封闭，形成其结束。下体的开口端的内周面形成为阶梯状，使得分析用样品容器配置成与储存在下体中的分解溶液的表面间隔开，并且内周面盖体和下体通过其邻接面平滑地连续地彼此接合，以将容器保持在适当的气密度。通过使用该装置的分析处理，可以以ppt的顺序对用于半导体工业中用于集成技术显着开发的硅材料中所含的杂质进行定量分析，以获得具有高可靠性的硅产品。

88. 发明授权

US5808745A Method for measuring a substitutional carbon concentration 失效
标题翻译：替代碳浓度测定方法
公开(公告)号：US5808745A
公开(公告)日：1998-09-15
申请号：US851612
申请日：1997-05-06
申请人： Hiroshi Shirai , Mikio Watanabe , Shinichiro Takasu
发明人： Hiroshi Shirai , Mikio Watanabe , Shinichiro Takasu
IPC分类号： C30B13/00 , G01N21/59 , G01J40/00 , G01N21/00
CPC分类号： C30B29/06 , C30B13/00 , G01N21/59
摘要： A silicon wafer measuring method includes: (a) a first step of measuring a light transmission characteristic (I.sub.OBS) of the pulled silicon wafer by utilizing parallel polarized light incident at the Brewster angle into the pulled silicon wafer, (b) a second step of measuring a light transmission characteristic (I.sub.O) of a floating zone silicon wafer functioning as a reference silicon wafer by utilizing parallel polarized light incident at the Brewster angle into the floating zone silicon wafer, and (c) a third step of calculating a substitutional carbon concentration �C.sub.SC ! on the basis of the light transmission characteristic (I.sub.OBS) of the pulled silicon wafer measured during the first step and the light transmission characteristic (I.sub.O) of the floating zone silicon wafer measured during the second step, (d) a fourth step of comparing the substitutional carbon concentration �C.sub.SC ! of the pulled silicon wafer measured during the third step with a reference value, and (e) a fifth step of removing a pulled silicon wafer if its substitutional carbon concentration �C.sub.SC ! outside of a range of values about the reference value so as to be defective in view of the results compared during the fourth step.
摘要翻译：一种硅晶片测量方法包括：（a）第一步骤，通过利用以布鲁斯特角入射的平行偏振光将拉硅晶片的透光特性（IOBS）测量到拉硅晶片中，（b）第二步骤通过将以布鲁斯特角入射的平行偏振光利用于浮动区硅晶片，测量用作参考硅晶片的浮动区硅晶片的透光特性（IO），以及（c）计算替代碳浓度的第三步骤 [CSC]，基于在第一步骤期间测量的拉动硅晶片的透光特性（IOBS）和在第二步骤期间测量的浮动区硅晶片的透光特性（IO），（d）第四步骤将在第三步骤中测量的拉硅硅片的替代碳浓度[CSC]与参考值进行比较，和（e）第五步骤如果其替代碳浓度[CSC]超出参考值的值范围之外，则考虑到在第四步骤期间比较的结果而导致有缺陷的拉动硅晶片。

89. 发明授权

US5704974A Growth of silicon crystal from melt having extraordinary eddy flows on its surface 失效
标题翻译：来自熔体的硅晶体在其表面上生长具有非凡的涡流
公开(公告)号：US5704974A
公开(公告)日：1998-01-06
申请号：US620873
申请日：1996-03-22
申请人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
发明人： Koji Izunome , Souroku Kawanishi , Shinji Togawa , Atsushi Ikari , Hitoshi Sasaki , Shigeyuki Kimura
IPC分类号： C30B15/00 , C30B15/20 , C30B15/30 , C30B29/06 , H01L21/208 , C30B15/22
CPC分类号： C30B29/06 , C30B15/30
摘要： When a Si single crystal 8 is pulled up from a melt 6 received in a crucible 2, the state of eddy flows generated in the melt 6 is judged from the temperature distribution of the melt at the surface. According to the result of judgement, the gas, i.e. N.sub.2, Xe or Kr, which causes extraoridnary deviation in the density of a melt 6 is added to an atmospheric gas, so as to keep the eddy flows under unstabilized condition. The effect of said gas is typical in the case of crystal growth from the melt to which a dopant such as Ca, Sb, Al, As or In having the effect to suppress the extraordinary deviation in the density is added. Since the single crystal is pulled up from the melt held in the temperature-controlled condition at the surface, impurity distribution and oxygen distribution are made uniform along the direction of crystal growth. A single crystal obtained in this way has highly-stabilized quality.
摘要翻译：当将Si单晶8从容纳在坩埚2中的熔融物6拉出时，根据表面的熔体的温度分布来判断在熔体6中产生的涡流的状态。根据判断结果，将气体，即N2，Xe或Kr，其引起熔体6的密度的异常偏差加到大气中，以保持涡流处于不稳定状态。在来自熔融体的晶体生长的情况下，所述气体的效果是典型的，在该熔体中添加了具有抑制密度特别偏差的作用的诸如Ca，Sb，Al，As或In的掺杂剂。由于单晶被从保持在表面的温度控制条件下的熔体中拉出，所以杂质分布和氧分布沿晶体生长方向均匀。以这种方式获得的单晶具有高度稳定的质量。

90. 发明授权

US5556568A Slide gate plate 失效
标题翻译：滑门板
公开(公告)号：US5556568A
公开(公告)日：1996-09-17
申请号：US420779
申请日：1995-04-12
申请人： Shigeki Niwa , Etsuhiro Hasebe , Kazuo Itoh , Toshihiro Indoh , Masamichi Asai
发明人： Shigeki Niwa , Etsuhiro Hasebe , Kazuo Itoh , Toshihiro Indoh , Masamichi Asai
IPC分类号： B22D41/28 , B22D41/30
CPC分类号： B22D41/28 , Y10S266/01
摘要： A slide gate plate serving as a molten metal flow-rate control member for use in a molten metal discharging device, comprising an assembly of at least one stationary plate having a nozzle hole therein and a slide plate having a nozzle hole therein, the plates being designed so that one of the plates is thicker than the other plate by 1.5 mm or more. With this construction, the slide gate plate is reusable by polishing the sliding face off a worn plate for reuse.
摘要翻译：一种用作熔融金属排出装置中的熔融金属流量控制件的滑动门板，包括至少一个其中具有喷嘴孔的固定板和在其中具有喷嘴孔的滑动板的组件，所述板是设计成使得其中一个板比另一个板厚一个或更多个1.5mm。通过这种结构，滑动门板可以通过将磨损的抛光面从磨损的板上抛光以便重新使用。

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