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71. 发明授权

US6034036A Method of manufacturing oxide superconductors 失效
标题翻译：制造氧化物超导体的方法
公开(公告)号：US6034036A
公开(公告)日：2000-03-07
申请号：US938600
申请日：1997-09-25
申请人： Minoru Tagami , Xin Yao , Makoto Kambara , Yuh Shiohara , Shoji Tanaka
发明人： Minoru Tagami , Xin Yao , Makoto Kambara , Yuh Shiohara , Shoji Tanaka
IPC分类号： C04B35/653 , C01G1/00 , C01G3/00 , C30B15/00 , C30B15/02 , C30B29/22 , H01B13/00 , H01L39/24 , C30B11/04
CPC分类号： C30B29/225 , C30B15/02 , H01L39/2419 , Y10S505/729
摘要： The present invention is aimed to provide a means for manufacturing a RE123 system oxide superconductor showing good superconductivity characteristics under atmospheric ambiance. In a method of manufacturing a RE123 system oxide superconductor by melting, cooling and solidifying material including rare-earth elements and a Ba--Cu--O solvent for crystallization such as by the crystal pulling method, examining beforehand the relationship between the melted material composition and the equilibrium liquid-phase composition and the crystal composition of the RE123 system oxide superconductor formed therefrom in atmospheric ambiance, and based on the result of said examination, adjusting the average composition of the material or the composition of the solvent (for example, setting the average composition of the material to an area where the superconductivity phase and the liquid phase coexist in equilibrium, and at the same time adjust the "Ba/Cu" ratio of the melted material to 3/5-1/1, or adjust the "Ba/Cu" ratio of the solvent inside the crystal pulling crucible to 3/5-1/1), in order to control the amount of mutual substitution between RE and Ba (control the value of x in RE123 system superconductor RE.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.7-d to 0-0.05 and the like) for crystallization.
摘要翻译：本发明的目的在于提供一种制造在大气环境下表现出良好的超导特性的RE123系统氧化物超导体的方法。在通过熔融，冷却和固化包括稀土元素的材料和用于结晶的Ba-Cu-O溶剂的方法制造RE123系统氧化物超导体的方法中，例如通过晶体拉制法，预先检查熔融材料组成与平衡液相组成和在大气环境中由其形成的RE123系统氧化物超导体的晶体组成，并且基于所述检查的结果，调节材料的平均组成或溶剂的组成（例如，将材料的平均组成与超导相和液相平衡共存的区域，同时将熔融材料的“Ba / Cu”比调整为3 / 5-1 / 1，或调整“ Ba / Cu“比为3 / 5-1 / 1），以控制RE与Ba之间的相互替代量（控制值的RE123系超导体RE1 + xBa2-xCu3O7-d中的x为0-0.05等）进行结晶。

72. 发明授权

US5650008A Method for preparing homogeneous bridgman-type single crystals 失效
标题翻译：制备均匀桥状单晶的方法
公开(公告)号：US5650008A
公开(公告)日：1997-07-22
申请号：US564680
申请日：1995-12-01
申请人： Sindo Kou , Ying Tao
发明人： Sindo Kou , Ying Tao
IPC分类号： C30B11/00 , C30B11/04
CPC分类号： C30B29/10 , C30B11/04 , C30B29/40 , Y10T117/10 , Y10T117/1024
摘要： Growth of homogeneous single crystals is carried out by a modified Bridgman-type process using a second melt of a different composition to replenish the first melt of a predetermined composition held in the crystal growth container. By controlling the replenishing rate and suppressing diffusion between the two melts, composition variations in the first melt and hence the growing crystal are compensated. The second melt may be maintained at a predetermined higher temperature than the first melt. The first melt may be agitated during crystal growth by rotation. A liquid encapsulant may be used.
摘要翻译：均匀单晶的生长通过使用不同组成的第二熔体的改进的Bridgman型方法进行，以补充保持在晶体生长容器中的预定组合物的第一熔体。通过控制补充速率并抑制两种熔体之间的扩散，补偿第一熔体中的组成变化并因此补偿生长晶体。第二熔体可以保持在比第一熔体预定的更高的温度。可以通过旋转在晶体生长期间搅拌第一熔体。可以使用液体密封剂。

73. 发明授权

US10844512B2 Method for manufacturing synthetic gemstone 有权
公开(公告)号：US10844512B2
公开(公告)日：2020-11-24
申请号：US16518081
申请日：2019-07-22
申请人： Boram Holdings Co., Ltd.
发明人： Chul-Hong Choi , Dong-Wook Shin , In-Sang Yoon , Jung-Min Kim
IPC分类号： C30B11/04 , C30B13/08 , C30B29/58 , A44C17/00
CPC分类号： C30B13/08 , A44C17/007 , C30B29/58
摘要： Provided is a method for manufacturing a synthetic gemstone, which manufactures a synthetic gemstone from a body tissue separated from a person or an animal, the method including: extracting a biological material from the body tissue; preparing a mixed material by mixing the biological material with a gemstone material; and growing a synthetic gemstone on a crystal seed as a single crystal by melting the mixed material.

74. 发明授权

US10519563B2 Device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis 有权
公开(公告)号：US10519563B2
公开(公告)日：2019-12-31
申请号：US16475842
申请日：2017-12-11
申请人： THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
发明人： Shujie Wang , Niefeng Sun , Huisheng Liu , Tongnian Sun , Yanlei Shi , Huimin Shao , Xiaolan Li , Yang Wang , Lijie Fu
IPC分类号： C30B11/04 , C30B11/00 , C30B29/40
摘要： The invention provides a device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis, and belongs to the technical field of semiconductor crystal synthesis and growth. According to the used technical scheme, the device comprises a furnace body, a synthesis and crystal growth system positioned in a furnace cavity, and a heating system, a temperature measuring system, a heat preservation system and a control system matched therewith, wherein the synthesis and crystal growth system comprises a crucible and a volatile element carrier arranged on a horizontal side of the crucible, and the volatile element carrier is communicated with the crucible through an injection pipe to realize horizontal injection synthesis; the furnace body has a rotational freedom degree by means of a matched rotating mechanism, so that after the direct horizontal injection synthesis of a volatile element and a pure metal element, the entire furnace body is controlled by the rotating mechanism to slowly rotate, such that a high-purity compound semiconductor crystal is prepared through continuous VGF crystal growth after crystal synthesis, and the condition that a seed crystal is molten by the pure metal before VGF crystal growth can be avoided; and the method has characteristics of simple steps, easy operation and control, and is suitable for the industrial production of semiconductor crystals.

75. 发明授权

US10227711B2 Method for preparing polycrystalline silicon ingot 有权
公开(公告)号：US10227711B2
公开(公告)日：2019-03-12
申请号：US15357707
申请日：2016-11-21
申请人： JIANG XI SAI WEI LDK SOLAR HI-TECH CO., LTD.
发明人： Dongli Hu , Liang He , Yuepeng Wan , Qi Lei , Hongrong Chen , Tao Zhang , Dejing Zhong
IPC分类号： C30B11/00 , C30B11/02 , C30B11/04 , C30B11/14 , C30B28/06 , C30B29/06 , H01L29/04 , H01L29/16 , H01L31/0368
摘要： Disclosed is a method for preparing polycrystalline silicon ingot. The preparation method comprises: coating inner wall of the crucible with a layer of silicon nitride, followed by laying a layer of crushed silicon and feeding silicon in the crucible; the crushed silicon is laid in random order, and the layer of crushed silicon forms a supporting structure having numerous holes; melting the silicon to form molten silicon by heating, when solid-liquid interface reach the surface of the layer of crushed silicon or when the layer of crushed silicon melt partially, regulating thermal field to achieve supercooled state to grow crystals; after the crystallization of molten silicon is completely finished, performing annealing and cooling to obtain polycrystalline silicon ingot. By adopting the preparation method, a desirable initial nucleus can be obtained for a polycrystalline silicon ingot, so as to reduce dislocation multiplication during the growth of the polycrystalline silicon ingot.

76. 发明申请

US20180010041A1 SCINTILLATION CRYSTAL, A RADIATION DETECTION SYSTEM INCLUDING THE SCINTILLATION CRYSTAL, AND A METHOD OF USING THE RADIATION DETECTION SYSTEM 审中-公开
公开(公告)号：US20180010041A1
公开(公告)日：2018-01-11
申请号：US15710509
申请日：2017-09-20
申请人： SAINT-GOBAIN CERAMICS & PLASTICS, INC.
发明人： Peter R. MENGE , Vladimir OUSPENSKI
IPC分类号： C09K11/77 , C04B35/515 , G01T1/20 , C04B35/553 , C30B15/04 , C30B11/04 , G01T1/202 , G21K4/00 , C30B29/12
CPC分类号： C09K11/7772 , C04B35/5152 , C04B35/553 , C04B2235/3206 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3284 , C04B2235/9646 , C09K11/7773 , C30B11/04 , C30B15/04 , C30B29/12 , G01T1/2018 , G01T1/202 , G21K4/00
摘要： A scintillation crystal can include Ln(1-y)REyX3, wherein Ln represents a rare earth element, RE represents a different rare earth element, y has a value in a range of 0 to 1, and X represents a halogen. In an embodiment, RE is Ce, and the scintillation crystal is doped with Sr, Ba, or a mixture thereof at a concentration of at least approximately 0.0002 wt. %. In another embodiment, the scintillation crystal can have unexpectedly improved linearity and unexpectedly improved energy resolution properties. In a further embodiment, a radiation detection system can include the scintillation crystal, a photosensor, and an electronics device. Such a radiation detection system can be useful in a variety of radiation imaging applications.

77. 发明授权

US09770781B2 Material processing through optically transmissive slag 有权
公开(公告)号：US09770781B2
公开(公告)日：2017-09-26
申请号：US14144680
申请日：2013-12-31
申请人： Gerald J. Bruck , Ahmed Kamel
发明人： Gerald J. Bruck , Ahmed Kamel
IPC分类号： B23K26/00 , B23K26/34 , C30B29/52 , C30B11/00 , C30B11/04 , B23K26/18 , B23K26/122 , B23K26/211 , B23K9/18 , B23K26/12
CPC分类号： B23K26/009 , B23K9/18 , B23K26/122 , B23K26/1224 , B23K26/18 , B23K26/211 , B23K26/34 , C30B11/005 , C30B11/04 , C30B29/52 , Y10T428/12458
摘要： A process for growing a substrate (24) as a melt pool (28) solidifies beneath a molten slag layer (30). An energy beam (36) is used to melt a powder (32) or a hollow feed wire (42) with a powdered alloy core (44) under the slag layer. The slag layer is at least partially transparent (37) to the energy beam, and it may be partially optically absorbent or translucent to the energy beam to absorb enough energy to remain molten. As with a conventional ESW process, the slag layer insulates the molten material and shields it from reaction with air. A composition of the powder may be changed across a solidification axis (A) of the resulting component (60) to provide a functionally graded directionally solidified product.

78. 发明申请

US20170139059A1 FABRICATION OF A SCINTILLATOR MATERIAL OF ELPASOLITE TYPE 审中-公开
公开(公告)号：US20170139059A1
公开(公告)日：2017-05-18
申请号：US15418396
申请日：2017-01-27
申请人： Saint-Gobain Cristaux Et Detecteurs
发明人： Vladimir OUSPENSKI , Samuel BLAHUTA , Raphaël HUCHET , Julien LEJAY
IPC分类号： G01T1/202 , C09K11/77 , C30B15/04 , C30B29/12 , C30B11/02 , C30B11/04
CPC分类号： G01T1/2023 , C09K11/7766 , C09K11/7773 , C30B11/00 , C30B11/02 , C30B11/04 , C30B15/00 , C30B15/04 , C30B29/12
摘要： The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A2BC(1-y)MyX(6-y) wherein: A is chosen from among Cs, Rb, K, Na, B is chosen from among Li, K, Na, C is chosen from among the rare earths, Al, Ga, M is chosen from among the alkaline earths, X is chosen from among F, Cl, Br, I, y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.

79. 发明授权

US09599727B2 Fabrication of a scintillator material of elpasolite type 有权
公开(公告)号：US09599727B2
公开(公告)日：2017-03-21
申请号：US14879650
申请日：2015-10-09
申请人： Saint-Gobain Cristaux Et Detecteurs
发明人： Vladimir Ouspenski , Samuel Blahuta , Raphael Huchet , Julien Lejay
IPC分类号： H05B33/00 , G01T1/202 , C30B11/00 , C30B15/00 , C30B29/12 , C09K11/77 , C30B11/02 , C30B11/04 , C30B15/04
CPC分类号： G01T1/2023 , C09K11/7766 , C09K11/7773 , C30B11/00 , C30B11/02 , C30B11/04 , C30B15/00 , C30B15/04 , C30B29/12
摘要： A process for fabricating a crystalline scintillator material with an elpasolite structure that has a theoretical composition of A2BC(1-y)MyX(6-y) can include conducting crystallization by cooling from a melt bath including r moles of A and s moles of B. A is chosen from Cs, Rb, K, and Na. B is chosen from Li, K, and Na. C is chosen from athe rare earth elements, Al, and Ga. M is chosen from the alkaline earth elements. X is chosen from F, Cl, Br, and I, and y represents the atomic fraction of substitution of C by M and is in the range extending from 0 to 0.05. The melt bath can be in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. The crystals formed therefrom can have improved scintillation properties.

80. 发明授权

US09562304B2 Polycrystalline silicon ingot, preparation method thereof, and polycrystalline silicon wafer 有权
标题翻译：多晶硅锭，其制备方法和多晶硅晶片
公开(公告)号：US09562304B2
公开(公告)日：2017-02-07
申请号：US14389452
申请日：2013-03-28
申请人： JIANG XI SAI WEI LDK SOLAR HI-TECH CO., LTD.
发明人： Dongli Hu , Liang He , Yuepeng Wan , Qi Lei , Hongrong Chen , Tao Zhang , Dejing Zhong
IPC分类号： C30B11/00 , C30B29/06 , C30B28/06 , C30B11/02 , C30B11/04 , H01L29/04 , H01L29/16 , C30B11/14
CPC分类号： C30B28/06 , C30B11/00 , C30B11/003 , C30B11/006 , C30B11/02 , C30B11/04 , C30B11/14 , C30B29/06 , H01L29/04 , H01L29/16 , H01L31/03682
摘要： Disclosed is a preparation method of a polycrystalline silicon ingot. The preparation method comprises: providing a silicon nucleation layer at the bottom of a crucible, and filling a silicon material above the silicon nucleation layer; heating the silicon material to melt same, adjusting the thermal field inside the crucible to make the melted silicon material to start crystallization on the basis of the silicon nucleation layer; and when the crystallization is finished, performing annealing and cooling to obtain a polycrystalline silicon ingot. By adopting the preparation method, a desirable initial nucleus can be obtained for a polycrystalline silicon ingot, so as to reduce dislocation multiplication during the growth of the polycrystalline silicon ingot. Further disclosed are a polycrystalline silicon ingot obtained through the preparation method and a polycrystalline silicon wafer made using the polycrystalline silicon ingot as a raw material.
摘要翻译：公开了多晶硅锭的制备方法。该制备方法包括：在坩埚的底部提供硅成核层，并在硅成核层上填充硅材料; 加热硅材料以熔化相同的温度，调节坩埚内的热场，使熔融的硅材料在硅成核层的基础上开始结晶; 结晶结束时，进行退火和冷却，得到多晶硅锭。通过采用该制备方法，可以获得多晶硅锭所需的初始核，从而减少多晶硅锭生长期间的位错倍增。进一步公开了通过制备方法获得的多晶硅锭和使用多晶硅锭作为原料制成的多晶硅晶片。

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