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71. 发明授权

US08801150B2 Piezoelectric device, piezoelectric device manufacturing method, and liquid discharge apparatus 有权
标题翻译：压电元件，压电元件的制造方法以及液体排出装置
公开(公告)号：US08801150B2
公开(公告)日：2014-08-12
申请号：US13000408
申请日：2009-07-27
申请人： Yoshikazu Hishinuma , Takehiro Kasahara , Yasukazu Nihei , Takamichi Fujii , Yuuichi Okamoto , Takami Arakawa , Takayuki Naono
发明人： Yoshikazu Hishinuma , Takehiro Kasahara , Yasukazu Nihei , Takamichi Fujii , Yuuichi Okamoto , Takami Arakawa , Takayuki Naono
IPC分类号： H01L41/18 , H01L41/083 , H01L41/04 , H01L41/02 , H01L41/00 , B41J2/045
CPC分类号： B41J2/161 , B41J2/1646 , C04B35/49 , H01L41/0805 , H01L41/0973 , H01L41/1875 , H01L41/316 , Y10T29/42
摘要： A piezoelectric device, including the following on a substrate in the order listed below: a lower electrode, a piezoelectric film which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode, in which the piezoelectric film has a layer of pyrochlore oxide on the surface facing the lower electrode, and the average layer thickness of the pyrochlore oxide layer is not greater than 20 nm. AaBbO3 (P) where, A: at least one type of A-site element containing Pb as a major component, B: at least one type of B-site element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and O: an oxygen element.
摘要翻译：一种压电装置，其以下列顺序包括在基板上：下电极，包含由下面的一般表达式（P）表示的含Pb的钙钛矿氧化物的压电膜和上电极，其中压电膜在面向下电极的表面上具有一层烧绿石氧化物，烧绿石氧化物层的平均层厚不大于20nm。 AaBbO3（P）其中A：至少一种含有Pb作为主要成分的A位元素，B：选自Ti，Zr，V，Nb，Ta中的至少一种B位元素，Cr，Mo，W，Mn，Sc，Co，Cu，In，Sn，Ga，Zn，Cd，Fe和Ni，O：氧元素。

72. 发明授权

US08570837B2 Multilayer backing absorber for ultrasonic transducer 有权
标题翻译：用于超声波换能器的多层背衬吸收器
公开(公告)号：US08570837B2
公开(公告)日：2013-10-29
申请号：US12330316
申请日：2008-12-08
申请人： Minoru Toda , Mitchell L. Thompson
发明人： Minoru Toda , Mitchell L. Thompson
IPC分类号： H04R17/00 , H01L41/02
CPC分类号： B06B1/06 , G10K11/002 , Y10T156/10 , Y10T428/24132 , Y10T428/3154
摘要： A multilayer backing absorber for use with an ultrasonic transducer comprises an elemental multilayer having at least one metal layer and at least one adhesive layer, wherein the backing absorber is adapted to be coupled to a vibrating layer of the ultrasonic transducer.
摘要翻译：一种与超声波换能器一起使用的多层背衬吸收器包括具有至少一个金属层和至少一个粘合剂层的元素多层，其中背衬吸收体适于与超声换能器的振动层耦合。

73. 发明申请

US20130181575A1 Piezoelectric Based MEMS Structure 有权
标题翻译：基于压电的MEMS结构
公开(公告)号：US20130181575A1
公开(公告)日：2013-07-18
申请号：US13349009
申请日：2012-01-12
申请人： Po-Jui Chen , Ando Feyh , Gary O'Brien
发明人： Po-Jui Chen , Ando Feyh , Gary O'Brien
IPC分类号： H01L41/083 , H01L41/22 , H01L41/02
CPC分类号： H01L41/096 , G01L1/16 , H01L41/047 , H01L41/094 , H01L41/1132 , Y10T29/42
摘要： In one embodiment, a method of deforming a MEMS structure includes providing a base layer, providing a first piezoelectric slab operably connected to a surface of the base layer, determining a desired deformation of the base layer, applying a first potential to a first electrode operably connected to the first piezoelectric slab, applying a second potential to a second electrode operably connected to the first piezoelectric slab, and deforming the base layer with the first piezoelectric slab using the applied first potential and the applied second potential based upon the determined desired deformation.
摘要翻译：在一个实施例中，使MEMS结构变形的方法包括提供基底层，提供可操作地连接到基底层的表面的第一压电片，确定基底层的期望变形，将第一电位可操作地施加到第一电极连接到所述第一压电板，将第二电位施加到可操作地连接到所述第一压电板的第二电极，以及基于所确定的期望变形，使用所施加的第一电位和所施加的第二电位，使所述基层与所述第一压电板发生变形。

74. 发明申请

US20130109332A1 TEMPERATURE COMPENSATION OF ACOUSTIC RESONATORS IN THE ELECTRICAL DOMAIN 有权
标题翻译：电气谐振器在电气领域的温度补偿
公开(公告)号：US20130109332A1
公开(公告)日：2013-05-02
申请号：US13287859
申请日：2011-11-02
申请人： Robert Aigner
发明人： Robert Aigner
IPC分类号： H01L41/02 , H04B1/38 , H03H9/54
CPC分类号： H03H9/02102 , H03H9/02834 , H03H9/542 , H03H9/568 , H03H9/605 , H03H9/6483 , H04B1/38
摘要： Embodiments of apparatuses, systems and methods relating to temperature compensation of acoustic resonators in the electrical domain are disclosed. Other embodiments may be described and claimed.
摘要翻译：公开了与电场中的声谐振器的温度补偿相关的装置，系统和方法的实施例。可以描述和要求保护其他实施例。

75. 发明申请

US20120319534A1 BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER AND BRIDGE 有权
标题翻译：包含非压电层和桥的大容量谐振谐振器
公开(公告)号：US20120319534A1
公开(公告)日：2012-12-20
申请号：US13168101
申请日：2011-06-24
申请人： Alexandre SHIRAKAWA , Dariusz BURAK , Phil NIKKEL
发明人： Alexandre SHIRAKAWA , Dariusz BURAK , Phil NIKKEL
IPC分类号： H01L41/02
CPC分类号： H03H3/02 , H03H9/02118 , H03H9/173 , H03H2003/021
摘要： A bulk acoustic wave (BAW) resonator, comprises: a first electrode formed on a substrate; a piezoelectric layer formed on the first electrode; a second electrode formed on the first piezoelectric layer; a non-piezoelectric layer formed on the first electrode and adjacent to the piezoelectric layer; and a bridge formed between the non-piezoelectric layer and the first or second electrode.
摘要翻译：体声波（BAW）谐振器包括：形成在基板上的第一电极; 形成在所述第一电极上的压电层; 形成在第一压电层上的第二电极; 形成在所述第一电极上且与所述压电层相邻的非压电层; 以及形成在非压电层和第一或第二电极之间的桥。

76. 发明授权

US08289092B2 Microelectromechanical resonant structure having improved electrical characteristics 有权
标题翻译：具有改善的电特性的微机电谐振结构
公开(公告)号：US08289092B2
公开(公告)日：2012-10-16
申请号：US12953930
申请日：2010-11-24
申请人： Anna Pomarico , Pasquale Flora , Annarita Morea , Giuditta Roselli
发明人： Anna Pomarico , Pasquale Flora , Annarita Morea , Giuditta Roselli
IPC分类号： H03B5/30 , H01L41/02
CPC分类号： H03H9/02338 , H03H9/02259 , H03H9/02409 , H03H9/02433 , H03H9/2436 , H03H2009/02511 , H03H2009/2442
摘要： The present disclosure is directed to a MEMS resonant structure, provided with a substrate of semiconductor material; a mobile mass suspended above the substrate and anchored to the substrate by constraint elements to be free to oscillate at a resonance frequency; and a fixed-electrode structure capacitively coupled to the mobile mass to form a capacitor with a capacitance that varies as a function of the oscillation of the mobile mass; the fixed-electrode structure arranged on a top surface of the substrate, and the constraint elements being configured in such a way that the mobile mass oscillates, in use, in a vertical direction, transverse to the top surface of the substrate, keeping substantially parallel to the top surface.
摘要翻译：本公开涉及一种设置有半导体材料的衬底的MEMS谐振结构; 悬浮在衬底上方并通过约束元件锚固到衬底以便以共振频率自由振荡的移动质量; 以及电容耦合到所述移动质量块的固定电极结构，以形成电容器，所述电容器随着所述移动质量块的振荡而变化; 所述固定电极结构布置在所述衬底的顶表面上，并且所述约束元件被配置成使得所述移动质量块在使用中在垂直方向上垂直于所述衬底的顶表面振荡，保持基本平行到顶面。

77. 发明申请

US20120212108A1 PIEZOELECTRIC ACTUATOR INCLUDING X-GRADED TiOX ADHESIVE LAYER AND ITS MANUFACTURING METHOD 有权
标题翻译：包括X级粉末TiOX粘合层的压电致动器及其制造方法
公开(公告)号：US20120212108A1
公开(公告)日：2012-08-23
申请号：US13399138
申请日：2012-02-17
申请人： Susumu NAKAMURA
发明人： Susumu NAKAMURA
IPC分类号： H01L41/02 , B05D5/12
CPC分类号： H01L41/319 , B81B3/00 , H01L41/0815 , Y10T29/42
摘要： In a piezoelectric actuator including a substrate, an insulating layer formed on the substrate, an adhesive layer formed on the insulating layer, a Pt lower electrode layer formed on the adhesive layer, and a PZT piezoelectric layer formed on the Pt lower electrode layer, the adhesive layer is made of TiOx having a composition x which is graded so that the composition x on the side of thio insulating layer is larger than the composition x on the side of the Pt lower electrode layer.
摘要翻译：在包括基板的压电致动器中，形成在基板上的绝缘层，形成在绝缘层上的粘合层，形成在粘合剂层上的Pt下电极层和形成在Pt下电极层上的PZT压电层，粘合剂层由具有分级x的成分x的TiO x制成，使得硫绝缘层侧的组成x大于Pt下电极层一侧的组成x。

78. 发明申请

US20120161949A1 ACUATOR SYSTEMS AND METHODS USING AN ELECTRICALLY DEFORMABLE MATERIAL 审中-公开
标题翻译： ACUATOR系统和使用电动变形材料的方法
公开(公告)号：US20120161949A1
公开(公告)日：2012-06-28
申请号：US12980242
申请日：2010-12-28
申请人： Hin Sing FONG
发明人： Hin Sing FONG
IPC分类号： G08B6/00 , H01L41/02
CPC分类号： H02N2/06
摘要： Actuation systems and devices using an electrically deformable material are disclosed. In the embodiments, a bidirectional actuator assembly includes a first unit including an electrically deformable material coupleable to an activation voltage and configured to provide a displacement in a first direction when the activation voltage is applied to the first unit. A second unit is serially electrically coupled to the first unit and includes an electrically deformable material coupleable to the activation voltage and configured to provide a displacement in a second direction that is different from the first direction when the activation voltage is applied to the second unit. A unidirectional actuator assembly includes at least one unit including an electrically deformable material coupleable to an activation voltage, wherein the electrically deformable material provides a displacement in a selected direction when the activation voltage is applied to the at least one unit.
摘要翻译：公开了使用电可变形材料的致动系统和装置。在实施例中，双向致动器组件包括第一单元，该第一单元包括可激活电压的电可变形材料，并且被配置为当激活电压施加于第一单元时沿第一方向提供位移。第二单元串联地电耦合到第一单元，并且包括可与可激活电压耦合的电可变形材料，并且被配置为当激活电压施加到第二单元时，沿与第一方向不同的第二方向提供位移。单向致动器组件包括至少一个单元，该单元包括可与激活电压耦合的电可变形材料，其中当激活电压施加到所述至少一个单元时，所述电可变形材料提供所选方向上的位移。

79. 发明申请

US20120062068A1 MULTI-MODE BULK-ACOUSTIC-WAVE RESONATORS 有权
标题翻译：多模式大声波谐振器
公开(公告)号：US20120062068A1
公开(公告)日：2012-03-15
申请号：US13228593
申请日：2011-09-09
申请人： ADAM WATHEN , Farasat Munir , Anthony J. Dickherber , Christopher D. Corso , William Hunt
发明人： ADAM WATHEN , Farasat Munir , Anthony J. Dickherber , Christopher D. Corso , William Hunt
IPC分类号： H01L41/02
CPC分类号： H03H9/175 , H03H9/02062 , H03H9/13
摘要： The various embodiments of the present disclosure relate generally bulk-acoustic-wave resonators. An exemplary embodiment of the present invention provides a bulk-acoustic-wave resonator comprising an acoustic reflector, a substantially c-axis oriented hexagonal crystal structure, and a plurality of electrodes. The crystal structure is solidly-mounted to the acoustic reflector. The bulk-wave resonator resonates in at least two non-harmonically-related operational modes.
摘要翻译：本公开的各种实施例一般涉及体声波谐振器。本发明的一个示例性实施例提供一种包括声反射器，基本上c轴取向的六方晶体结构和多个电极的体声波谐振器。晶体结构牢固地安装在声反射体上。体波谐振器以至少两个非谐波相关的工作模式谐振。

80. 发明申请

US20120049690A1 ACOUSTIC WAVE DEVICE 有权
标题翻译：声波设备
公开(公告)号：US20120049690A1
公开(公告)日：2012-03-01
申请号：US13206660
申请日：2011-08-10
申请人： Shoji Okamoto , Takashi Inoue , Takahiro Sato , Rei Goto , Hidehito Shimizu , Toru Jibu
发明人： Shoji Okamoto , Takashi Inoue , Takahiro Sato , Rei Goto , Hidehito Shimizu , Toru Jibu
IPC分类号： H01L41/02
CPC分类号： H03H9/02637 , H03H9/02921 , H03H9/14538
摘要： An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode, a reflector electrode, and a dummy electrode. The IDT electrode includes electrode fingers extending in a predetermined direction. The reflector electrode faces the IDT electrode across a gap. The dummy electrode is situated on a straight line extending in the predetermined direction through the gap. At least one of the distance between the dummy electrode and the IDT electrode and the distance between the dummy electrode and the reflector electrode is larger than the distance between the IDT electrode and the reflector electrode. This acoustic wave device prevents a short circuit between the IDT electrode and the reflector electrode, thereby avoiding a decrease in its yield.
摘要翻译：声波装置包括压电基板，叉指式换能器（IDT）电极，反射器电极和虚拟电极。 IDT电极包括沿预定方向延伸的电极指。反射器电极跨越间隙面对IDT电极。虚拟电极位于沿预定方向延伸穿过间隙的直线上。虚拟电极和IDT电极之间的距离和虚拟电极与反射器电极之间的距离中的至少一个大于IDT电极和反射器电极之间的距离。该声波器件防止IDT电极和反射器电极之间的短路，从而避免其产量的降低。

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