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71. 发明申请

US20020019130A1 PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE, APPARATUS USING MORE THAN ONE KIND OF INERT GAS FOR EVACUATING AIR AND METHOD FOR ENTERING WAFER INTO THE APPARATUS 失效
标题翻译：用于制造半导体器件的方法，使用多于一种惰性气体来消除空气的装置和将装置输入装置的方法
公开(公告)号：US20020019130A1
公开(公告)日：2002-02-14
申请号：US09513926
申请日：2000-02-28
发明人： Tatsuya Usami
IPC分类号： H01L021/44 , H01L021/324 , H01L021/477
CPC分类号： H01L21/28194 , H01L21/02134 , H01L21/02238 , H01L21/02255 , H01L21/02282 , H01L21/28211 , H01L21/31058 , H01L21/3124 , H01L21/31662 , H01L21/324 , Y10S438/913
摘要： Semiconductor wafers on a boat are inserted into a furnace chamber of a vertical oxidation/diffusion furnace, and helium gas and argon gas are injected into the furnace chamber during the insertion of the boat, so that the light helium gas fills the furnace chamber without residual air and the heavy argon gas pushes out the residual air from gaps between the semiconductor wafers.
摘要翻译：将船上的半导体晶片插入垂直氧化/扩散炉的炉室中，并且在船的插入期间将氦气和氩气注入炉室中，使得轻氦气填充炉室而不残留空气和重氩气从半导体晶片之间的间隙推出剩余空气。

72. 发明申请

US20010053617A1 Transportation method for a semiconductor device and transportation route selection method for a semiconductor device 有权
标题翻译：半导体装置的运送方法以及半导体装置的运送路径选择方法
公开(公告)号：US20010053617A1
公开(公告)日：2001-12-20
申请号：US09800010
申请日：2001-03-06
发明人： Hiroo Shoji
IPC分类号： H01L021/26 , H01L021/324 , H01L021/42 , H01L021/477 , B65G049/07
CPC分类号： G05B19/41865 , G05B2219/31281 , G05B2219/32015 , G05B2219/32187 , G05B2219/32188 , Y02P90/20 , Y02P90/22 , Y02P90/28 , Y10S414/135
摘要： The occurrence of defects of a semiconductor device at the time of transportation is prevented by the present invention relates to a transportation method for a semiconductor device which uses, for transportation of a semiconductor device from the departure point to the arrival point, the transportation route B1nullB2 wherein the cosmic ray concentration is the smallest among a plurality of transportation routes A and B1nullB2 from the departure point to the arrival point. In addition, the invention also relates to a transportation route selection method for a semiconductor device comprising the step of inputting a departure point and an arrival point for the transportation for a semiconductor device, the step of calculating a plurality of transportation routes A and B1nullB2 from the departure point to the arrival point, the step of calculating the cosmic ray concentration in each of the plurality of transportation routes A and B1nullB2 and the step of selecting the transportation route wherein the cosmic ray concentration is the smallest among the plurality of transportation routes A and B1nullB2.
摘要翻译：本发明涉及半导体装置的运输方法，该半导体装置用于从出发地到达点运输半导体装置的运输路线B1 + B2，其中宇宙射线浓度在从出发点到到达点的多个运输路线A和B1 + B2中最小。此外，本发明还涉及一种半导体装置的运输路线选择方法，包括输入半导体装置的运送的出发地点和到达点的步骤，计算多个运送路线A，B1 + 从出发点到到达点的B2，计算多个交通路线A和B1 + B2中的每一个中的宇宙射线浓度的步骤以及选择多个运送路线中的宇宙射线浓度最小的运送路线的步骤的交通路线A和B1 + B2。

73. 发明申请

US20010024866A1 Method of manufacturing a transistor 有权
标题翻译：制造晶体管的方法
公开(公告)号：US20010024866A1
公开(公告)日：2001-09-27
申请号：US09814390
申请日：2001-03-21
申请人： U.S. Philips Corporation
发明人： Darren T. Murley , Michael J. Trainor
IPC分类号： H01L021/20 , H01L021/36 , H01L021/26 , H01L021/324 , H01L021/42 , H01L021/477 , H01L021/84
CPC分类号： H01L29/66757 , H01L29/78603 , H01L29/78675
摘要： A method of manufacturing a TFT (10) is disclosed comprising source (8) and drain (8null) electrodes joined by a semiconductor channel (6) formed from a semiconductor layer (4), a gate insulating layer (7) and a gate electrode (8null). The method comprising the steps of applying a foil (2) comprising a crystallisation enhancing material (CEM) and depositing the semiconductor layer (4) over a supporting substrate (1); and heating the semiconductor layer (4) so as to crystallise the semiconductor layer (4) from regions exposed to the CEM of the foil (2). The method may further comprise the step of providing a patterned barrier layer (3) between the foil (2) and the semiconductor layer (4) wherein the semiconductor layer (4) is crystallised from regions exposed through vias in the barrier layer (3) to the CEM of the foil (2). Also disclosed is a TFT (10) manufactured by the same, and an active matrix device (20) comprising a row and column array of active elements (22) wherein each element (22) is associated with such a TFT (10) connected to corresponding row (24) and column (23) conductors.
摘要翻译：公开了一种制造TFT（10）的方法，其包括由半导体层（4），栅极绝缘层（7）和栅极绝缘层（7）形成的半导体沟道（6）连接的源极（8）和漏极（8“ 栅电极（8'）。该方法包括以下步骤：施加包含结晶增强材料（CEM）的箔（2）并将半导体层（4）沉积在支撑衬底（1）上; 以及加热半导体层（4）以使半导体层（4）从暴露于箔（2）的CEM的区域结晶。该方法还可以包括在箔（2）和半导体层（4）之间提供图案化阻挡层（3）的步骤，其中半导体层（4）从通过阻挡层（3）中的通孔暴露的区域结晶化，到箔（2）的CEM。还公开了由其制造的TFT（10）以及包括有源元件（22）的行和列阵列的有源矩阵器件（20），其中每个元件（22）与这样的TFT（10）相关联，相应的行（24）和列（23）导体。

74. 发明申请

US20040253839A1 Semiconductor manufacturing apparatus and heat treatment method 审中-公开
标题翻译：半导体制造装置及热处理方法
公开(公告)号：US20040253839A1
公开(公告)日：2004-12-16
申请号：US10864596
申请日：2004-06-10
申请人： TOKYO ELECTRON LIMITED
发明人： Masahiro Shimizu , Yusaku Kashiwagi , Gishi Chung , Yoshihide Tada , Genji Nakamura
IPC分类号： H01L021/26 , H01L021/42 , H01L021/477
CPC分类号： H01L21/76855 , H01L21/268 , H01L21/67115 , H01L21/67253 , H01L21/76825 , H01L21/76828 , H01L21/76832 , H01L21/76834 , H01L21/76838 , H01L21/76864
摘要： A heat treatment apparatus selectively heats an object material to be heated so as to achieve energy saving and low-temperature heating. A light source irradiates a light onto a heating material through a transparent window of a process chamber. A controller controls an output of the light source. The heating material is a material to form a layer formed in a wiring process after a semiconductor structure is formed in a semiconductor manufacturing process. The light irradiated by the light source has a specific wavelength at which an optical absorption factor of the heating material is larger than at other wavelengths. The transparent window is formed of a material that passes therethrough the light having the specific wavelength.
摘要翻译：热处理装置选择性地加热待加热的物体，以实现节能和低温加热。光源通过处理室的透明窗将光照射到加热材料上。控制器控制光源的输出。加热材料是在半导体制造工艺中形成半导体结构之后形成在布线工艺中形成的层的材料。由光源照射的光具有加热材料的光吸收系数大于其他波长的特定波长。透明窗由穿过具有特定波长的光的材料形成。

75. 发明申请

US20040248430A1 Wafer cooling chuck with direct coupled peltier unit 审中-公开
标题翻译：晶圆冷却卡盘与直接耦合的珀耳帖单元
公开(公告)号：US20040248430A1
公开(公告)日：2004-12-09
申请号：US10457893
申请日：2003-06-09
发明人： Rennie Barber , Mark Mayeda
IPC分类号： B24B049/00 , H01L021/324 , H01L021/64 , H01L021/477 , H01L021/00 , B24B051/00 , H01L021/26 , C23C016/00 , H01L021/42
CPC分类号： H01L35/00 , H01L21/324 , H01L21/67109
摘要： A device for transferring an object between manufacturing steps includes a transfer surface for receiving an object having an initial temperature from a first manufacturing step, for transporting the object from the first manufacturing step to another manufacturing step, and for transferring the object having a final temperature from the transfer surface to the other manufacturing step; and at least one Peltier unit coupled to the transfer surface for effecting a temperature change of the object from the initial temperature to the final temperature at a controlled rate.
摘要翻译：用于在制造步骤之间传送物体的装置包括：传送表面，用于接收具有来自第一制造步骤的初始温度的物体，用于将物体从第一制造步骤传送到另一制造步骤，以及用于将具有最终温度的物体从转印表面到另一个制造步骤; 以及耦合到所述转移表面的至少一个珀耳帖单元，用于以受控的速率实现所述物体从初始温度到最终温度的温度变化。

76. 发明申请

US20040248351A1 Semiconductor manufacturing method using two-stage annealing 有权
标题翻译：半导体制造方法采用两阶段退火
公开(公告)号：US20040248351A1
公开(公告)日：2004-12-09
申请号：US10867766
申请日：2004-06-16
申请人： Kabushiki Kaisha Toshiba
发明人： Takayuki Ito , Kyoichi Suguro
IPC分类号： H01L021/336 , H01L021/3205 , H01L021/477 , H01L021/4763 , H01L021/8234
CPC分类号： H01L21/324 , H01L21/2686 , H01L29/6659
摘要： A method of semiconductor device manufacture provided includes forming a gate insulating layer upon a single crystal semiconductor substrate, forming a gate electrode made from a polycrystal conductive film upon the gate insulating layer, implanting impurity in the gate electrode and in the surface layer of the semiconductor substrate adjacent to or separate from the gate electrode, performing a first heat treatment, and performing a second heat treatment. The first heat treatment performs heat treatment at a temperature that diffuses the impurity implanted mainly in the gate electrode and controls the diffusion of the impurity implanted in the surface layer of the semiconductor substrate. The second heat treatment performs heat treatment at a higher temperature and for a shorter time than the first heat treatment, and at a temperature that activates the impurity implanted in the semiconductor substrate.
摘要翻译：提供的半导体器件制造方法包括在单晶半导体衬底上形成栅极绝缘层，在栅极绝缘层上形成由多晶导电膜制成的栅电极，在栅电极和半导体表面层中注入杂质基板，与栅电极相邻或分离，进行第一热处理，进行第二热处理。第一热处理在扩散主要在栅电极中注入的杂质的温度下进行热处理，并控制注入在半导体衬底的表面层中的杂质的扩散。第二热处理在比第一热处理更高的温度和更短的时间进行热处理，并且在激活注入在半导体衬底中的杂质的温度下进行热处理。

77. 发明申请

US20040124495A1 Bismaleimide (BMI) polymer as a sacrificial material for an integrated circuit air gap dielectric 失效
标题翻译：双马来酰亚胺（BMI）聚合物作为集成电路气隙电介质的牺牲材料
公开(公告)号：US20040124495A1
公开(公告)日：2004-07-01
申请号：US10330619
申请日：2002-12-26
发明人： Tian-An Chen , Kevin P. O'Brien
IPC分类号： H01L021/441 , H01L021/477
CPC分类号： H01L21/7682 , H01L21/02118 , H01L21/02203 , H01L21/02282 , H01L21/02348 , H01L21/312
摘要： A method for implementing a bismaleimide (BMI) polymer as a sacrificial material for an integrated circuit air gap dielectric. The method of one embodiment comprises forming a first and second metal interconnect lines on a substrate, wherein at least a portion of the first and second metal interconnect lines extend parallel to one another and wherein a trough is located between the parallel portion of said first and second metal interconnect lines. A layer of bismaleimide is spin coated over the substrate. The layer of bismaleimide is polished with a chemical mechanical polish, wherein the trough remains filled with the bismaleimide. A diffusion layer is formed over the substrate. The substrate is heated to activate a pyrolysis of the bismaleimide. An air gap is formed in the trough in the space vacated by the bismaleimide.
摘要翻译：一种用于实现用于集成电路气隙电介质的双马来酰亚胺（BMI）聚合物作为牺牲材料的方法。一个实施例的方法包括在衬底上形成第一和第二金属互连线，其中第一和第二金属互连线的至少一部分彼此平行延伸，并且其中槽位于所述第一和第二金属互连线的平行部分之间，第二金属互连线。将一层双马来酰亚胺旋涂在基材上。用化学机械抛光剂抛光双马来酰亚胺层，其中槽保持充满双马来酰亚胺。在衬底上形成扩散层。加热底物以活化双马来酰亚胺的热解。在由双马来酰亚胺空出的空间中的槽中形成气隙。

78. 发明申请

US20040087186A1 USING SONIC ENERGY IN CONNECTION WITH LASER-ASSISTED DIRECT IMPRINTING 有权
标题翻译：使用SONIC能量与激光辅助直接曝光相关
公开(公告)号：US20040087186A1
公开(公告)日：2004-05-06
申请号：US10273474
申请日：2002-10-18
发明人： Justin K. Brask
IPC分类号： H01L021/477 , H01L021/324 , H01L021/26 , H01L021/44 , H01L021/42
CPC分类号： H01L21/268 , H01L21/76838
摘要： A laser-assisted direct imprint process enables direct transfer of patterns on a contact mold to molten semiconductor material. During the pattern transfer, sonic energy may be applied to improve the efficacy of the pattern transfer.
摘要翻译：激光辅助直接压印工艺能够将接触模具上的图案直接转印到熔融半导体材料上。在图案转移期间，可以应用声能以改善图案转印的功效。

79. 发明申请

US20040056350A1 Electrical connection through nonmetal 审中-公开
标题翻译：通过非金属电连接
公开(公告)号：US20040056350A1
公开(公告)日：2004-03-25
申请号：US10253555
申请日：2002-09-24
申请人： Medtronic, Inc.
发明人： David A. Ruben
IPC分类号： H01L021/44 , H01L023/52 , H01L029/40 , H01L021/477
CPC分类号： H01L21/76886 , H01L21/76898 , H01L23/481 , H01L2224/16 , H01L2924/01322
摘要： A low resistance path extends from a first region of a semiconductor substrate to a second region thereof. The low resistance path is produced by depositing a metal such as aluminum on the surface of the substrate and then directing a laser beam onto the metal causing the metal and a portion of the substrate beneath the metal to melt forming an alloy of the metal and the substrate material.
摘要翻译：低电阻路径从半导体衬底的第一区域延伸到第二区域。低电阻路径是通过在基板的表面上沉积诸如铝的金属然后将激光束引导到金属上而产生的，导致金属和金属的一部分基底熔化形成金属和基材。

80. 发明申请

US20040053450A1 Method and system for providing a single-scan, continous motion sequential lateral solidification 失效
公开(公告)号：US20040053450A1
公开(公告)日：2004-03-18
申请号：US10311485
申请日：2003-09-22
发明人： Robert S. Sposili , James S. Im
IPC分类号： H01L021/00 , H01L021/324 , H01L021/477
CPC分类号： H01L21/02686 , B23K26/066 , B23K26/08 , B23K26/082 , B23K2101/40 , C30B13/00 , C30B29/06 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L21/268
摘要： A method and system for processing a silicon thin film sample on a substrate. The substrate has a surface portion that does not seed crystal growth in the silicon thin film. The film sample has a first edge and a second edge. An irradiation beam generator is controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Each of the irradiation beam pulses is masked to define a first plurality of beamlets and a second plurality of beamlets, the first and second plurality of beamlets of each of the irradiation pulses being provided for impinging the film sample and having an intensity which is sufficient to melt irradiated portions of the film sample throughout their entire thickness. The film sample is continuously scanned, at a constant predetermined speed, so that a successive impingement of the first and second beamlets of the irradiation beam pulses occurs in a scanning direction on the film sample between the first edge and the second edge. During the continuous scanning of the film sample, a plurality of first areas of the film sample are successively irradiated using the first beamlets of the irradiation beam pulses so that the first areas are melted throughout their thickness and leaving unirradiated regions between respective adjacent ones of the first areas. Also during the continuous scanning, each one of the first areas irradiated using the first beamlets of each of the irradiation beam pulses is allowed to re-solidify and crystalize. During resolidification and crystallization of the first areas, a plurality of second areas of the film sample are successively irradiated using the second beamlets of the irradiation beam pulses so that the second areas are melted throughout their thickness. Each of the second areas partially overlaps a respective pair of the re-solidified and crystalized first areas and the respective unirradiated region therebetween.

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