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71. 发明授权

US3512143A Ferromagnetic multifilm memory elements 失效
标题翻译： FERROMAGNETIC MULTIFILM记忆元素
公开(公告)号：US3512143A
公开(公告)日：1970-05-12
申请号：US3512143D
申请日：1968-02-14
申请人： IND BULL GENERAL ELECTRIC SA S
发明人： FEISSEL HENRI GERARD , GALLET FRANCOIS CHARLES
IPC分类号： G11C5/02 , G11C11/14 , G11C7/02 , H01F10/06
CPC分类号： G11C5/02 , G11C11/14 , Y10T29/49069

72. 发明授权

US3508887A Coupled ferromagnetic foils or layers 失效
标题翻译：耦合的FERROMAGNETIC FOILS或LAYERS
公开(公告)号：US3508887A
公开(公告)日：1970-04-28
申请号：US3508887D
申请日：1966-03-24
申请人： IND BULL GENERAL ELECTRIC SA S
发明人： CHEZEL PIERRE GEORGES HENRI , GIRARD RENE FERNAND VICTOR , GRUNBERG GEORGES , NEEL LOUIS
IPC分类号： C25D3/56 , H01F10/00 , H01F10/06 , H01F10/32 , B32B15/00
CPC分类号： B82Y25/00 , C25D3/562 , H01F10/00 , H01F10/06 , H01F10/3281 , Y10S428/926 , Y10S428/928 , Y10T428/12438 , Y10T428/12458 , Y10T428/1275 , Y10T428/12778 , Y10T428/12944

73. 发明授权

US3479156A Multilayer magnetic coating 失效
标题翻译：多层磁性涂料
公开(公告)号：US3479156A
公开(公告)日：1969-11-18
申请号：US3479156D
申请日：1966-10-20
申请人： BURTON SILVERPLATING CO
发明人： GINDER PAUL
IPC分类号： H01F10/06 , H01F10/32 , C23C17/00 , C23B5/50
CPC分类号： B82Y25/00 , H01F10/06 , H01F10/325 , Y10S428/926 , Y10S428/928 , Y10T428/12632 , Y10T428/12861 , Y10T428/12875

74. 发明授权

US3460106A Magnetic thin film adaptive element 失效
标题翻译：磁薄膜自适应元件
公开(公告)号：US3460106A
公开(公告)日：1969-08-05
申请号：US3460106D
申请日：1964-12-31
申请人： TEXAS INSTRUMENTS INC
发明人： ABRAHAM RICHARD P , SEVIN LEONCE J
IPC分类号： G06F15/18 , G11B5/66 , H01F10/04 , H01F10/06
CPC分类号： G06N99/005

75. 发明授权

US11963457B2 MTJ device performance by controlling device shape 有权
公开(公告)号：US11963457B2
公开(公告)日：2024-04-16
申请号：US18064808
申请日：2022-12-12
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Jesmin Haq , Tom Zhong , Zhongjian Teng , Vinh Lam , Yi Yang
IPC分类号： H10N50/01 , H01F10/06 , H01F10/16 , H10N50/10 , H10N50/80 , H10N50/85
CPC分类号： H10N50/01 , H01F10/06 , H01F10/16 , H10N50/10 , H10N50/80 , H10N50/85
摘要： A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.

76. 发明授权

US11527711B2 MTJ device performance by controlling device shape 有权
公开(公告)号：US11527711B2
公开(公告)日：2022-12-13
申请号：US17195317
申请日：2021-03-08
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Jesmin Haq , Tom Zhong , Zhongjian Teng , Vinh Lam , Yi Yang
IPC分类号： H01L43/12 , H01F10/06 , H01F10/16 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.

77. 发明申请

US20210193915A1 MTJ Device Performance by Controlling Device Shape 有权
公开(公告)号：US20210193915A1
公开(公告)日：2021-06-24
申请号：US17195317
申请日：2021-03-08
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Jesmin Haq , Tom Zhong , Zhongjian Teng , Vinh Lam , Yi Yang
IPC分类号： H01L43/12 , H01F10/06 , H01F10/16 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.

78. 发明授权

US10998115B2 Inductor 有权
公开(公告)号：US10998115B2
公开(公告)日：2021-05-04
申请号：US16822174
申请日：2020-03-18
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Woon Chul Choi
IPC分类号： H01F5/00 , H01F10/06 , H01F5/04 , H01F17/00 , H01F17/04 , H01F27/32
摘要： An inductor includes a support member, a plurality of conductor patterns disposed on at least one surface of the support member and supported by the support member, and an insulating structure interposed between conductor patterns adjacent each other among the plurality of conductor patterns, the insulating structure including a first insulating layer and a second insulating layer disposed on the first insulating layer, the second insulating layer covering side and upper surfaces of the conductor patterns, the second insulating layer being continuously formed along the side and upper surfaces of the conductor pattern, depending on external shapes of the side and upper surfaces of the conductor pattern disposed below the second insulating layer.

79. 发明申请

US20050068834A1 Magnetic random access memory (MRAM) having a magnetic tunneling junction (MTJ) layer including a tunneling film of uniform thickness and method of manufacturing the same 有权
标题翻译：具有磁隧道结（MTJ）层的磁性随机存取存储器（MRAM）包括均匀厚度的隧穿膜及其制造方法
公开(公告)号：US20050068834A1
公开(公告)日：2005-03-31
申请号：US10948633
申请日：2004-09-24
申请人： Tae-wan Kim , Sang-jin Park
发明人： Tae-wan Kim , Sang-jin Park
IPC分类号： G11C11/15 , G11C11/16 , H01F10/06 , H01F10/32 , H01F41/30 , H01L21/8246 , H01L27/105 , H01L27/115 , H01L43/08 , H01L43/12
CPC分类号： G11C11/16 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/06 , H01F10/3254 , H01F41/308 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a cell including a transistor and a magnetic tunneling junction (MTJ) layer connected to the transistor, wherein the MTJ layer includes a lower electrode, a lower magnetic film, a tunneling film having a uniform thickness and a substantially flat upper surface, and an upper magnetic film, wherein the lower electrode includes a first lower electrode and an amorphous second lower electrode. An amorphous flattening film may be further formed between the lower electrode and the lower magnetic film.
摘要翻译：磁性随机存取存储器（MRAM）及其制造方法包括：晶体管和连接到晶体管的磁隧道结（MTJ）层的单元，其中，所述MTJ层包括下电极，下磁膜，具有均匀厚度和基本平坦的上表面的隧道膜，以及上磁膜，其中所述下电极包括第一下电极和非晶二次下电极。可以在下电极和下磁膜之间进一步形成非晶平坦化膜。

80. 发明授权

US06870715B2 Spin valve magnetoresistive head having a free layer contacted at each end by a ferromagnetic layer of a bias layer 有权
标题翻译：自旋阀磁阻头具有通过偏置层的铁磁层在每一端接触的自由层
公开(公告)号：US06870715B2
公开(公告)日：2005-03-22
申请号：US09960679
申请日：2001-09-21
申请人： Eiji Umetsu
发明人： Eiji Umetsu
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/06 , H01F10/12 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268
摘要： A magnetoresistive element exhibiting good external magnetic field detection characteristics is provided. The magnetoresistive element includes a laminate comprising a nonmagnetic conductive layer, first and second ferromagnetic layer sandwiching the nonmagnetic conductive layer, and a first antiferromagnetic layer for pinning the magnetization direction of the first ferromagnetic layer, deposited on the face of the first ferromagnetic layer opposite the face in contact with the nonmagnetic conductive layer. Bias layers for applying a bias magnetic field to the second ferromagnetic layer are provided respectively on two ends of the laminate. Each bias layer comprises second and third antiferromagnetic layers and a third ferromagnetic layer sandwiched by the second and third antiferromagnetic layers so as to magnetically couple with the second and third antiferromagnetic layer. Two end faces of the second ferromagnetic layer come into contact with the third ferromagnetic layers.
摘要翻译：提供具有良好外部磁场检测特性的磁阻元件。磁阻元件包括层压体，其包括非磁性导电层，夹着非磁性导电层的第一和第二铁磁层和用于固定第一铁磁层的磁化方向的第一反铁磁层，第一铁磁层沉积在与第一铁磁层相对的第一铁磁层的表面上面对与非磁性导电层接触。分别在层叠体的两端设置用于向第二铁磁层施加偏置磁场的偏压层。每个偏置层包括第二和第三反铁磁层和夹在第二和第三反铁磁层之间的第三铁磁层，以便与第二和第三反铁磁层磁耦合。第二铁磁层的两个端面与第三铁磁层接触。

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