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71. 发明授权

US07922815B2 System and method for epitaxial deposition of a crystal using a liquid-solvent fluidized-bed mechanism 有权
标题翻译：使用液体溶剂流化床机理外延沉积晶体的系统和方法
公开(公告)号：US07922815B2
公开(公告)日：2011-04-12
申请号：US12485016
申请日：2009-06-15
申请人： Zalman M. Shapiro
发明人： Zalman M. Shapiro
IPC分类号： C30B29/04
CPC分类号： C30B9/10 , C30B29/04 , C30B35/00 , C30B35/005 , Y10T117/10 , Y10T117/1024
摘要： A system and method for growing diamond crystals from diamond crystal seeds by epitaxial deposition at low temperatures and atmospheric and comparatively low pressures. A solvent is circulated (by thermal convection and/or pumping), wherein carbon is added in a hot leg, transfers to a cold leg having, in some embodiments, a range of progressively lowered temperatures and concentrations of carbon via the circulating solvent, and deposits layer-by-layer on diamond seeds located at the progressively lower temperatures since as diamond deposits the carbon concentration lowers and the temperature is lowered to keep the solvent supersaturated. The solvent includes metal(s) or compound(s) that have low melting temperatures and transfer carbon at comparatively low temperatures. A controller receives parameter signals from a variety of sensors located in the system, processes these signals, and optimizes diamond deposition by outputting the necessary control signals to a plurality of control devices (e.g., valves, heaters, coolers, pumps).
摘要翻译：一种用于在低温和大气压和较低压力下通过外延沉积从金刚石晶种生长金刚石晶体的系统和方法。溶剂循环（通过热对流和/或泵送），其中碳被加入到热腿中，转移到冷腿，在一些实施方案中，通过循环溶剂逐渐降低温度和碳浓度的范围，以及沉积在逐渐降低的温度下的金刚石晶种上，因为当金刚石沉积时，碳浓度降低并且降低温度以保持溶剂变得过饱和。溶剂包括在较低温度下具有低熔点和转移碳的金属或化合物。控制器从位于系统中的各种传感器接收参数信号，处理这些信号，并通过向多个控制装置（例如，阀，加热器，冷却器，泵）输出必要的控制信号来优化金刚石沉积。

72. 发明授权

US07922812B2 Method for growing single crystals of metals 有权
标题翻译：生长金属单晶的方法
公开(公告)号：US07922812B2
公开(公告)日：2011-04-12
申请号：US11936954
申请日：2007-11-08
申请人： James R. Ciulik , Eric M. Taleff
发明人： James R. Ciulik , Eric M. Taleff
IPC分类号： C30B1/06
CPC分类号： C30B1/04 , C30B1/02 , C30B29/02 , Y10T117/10
摘要： A method for growing large single crystals of metals is disclosed. A polycrystalline form of a metal specimen is initially heated in a non-oxidizing environment. A minimum plastic strain is then applied to the heated metal specimen to initiate the growth of a selected grain within the heated metal specimen. Additional plastic strain is subsequently applied to the heated metal specimen to propagate the growth of the selected grain to become a large single crystal.
摘要翻译：公开了生长大单晶金属的方法。金属样品的多晶形式最初在非氧化环境中被加热。然后将最小的塑性应变施加到加热的金属样品上以引起加热的金属样品内选定的晶粒的生长。随后将附加的塑性应变施加到加热的金属试样上，以使所选择的晶粒的生长传播成为大的单晶。

73. 发明申请

US20110073034A1 APPARATUS AND PROCESS FOR CRYSTAL GROWTH 审中-公开
标题翻译：晶体生长的装置和工艺
公开(公告)号：US20110073034A1
公开(公告)日：2011-03-31
申请号：US12904434
申请日：2010-10-14
申请人： Arnab Basu , Max Robinson , Ben Cantwell , Andy Brinkman
发明人： Arnab Basu , Max Robinson , Ben Cantwell , Andy Brinkman
IPC分类号： C30B35/00 , C30B23/00
CPC分类号： C30B23/005 , C30B23/02 , C30B23/025 , C30B29/48 , C30B29/66 , Y10T117/10 , Y10T117/1004
摘要： The present invention relates to an apparatus for vapour phase crystal growth to produce multiple single crystals in one growth cycle comprising one central source chamber, a plurality of growth chambers, a plurality of passage means adapted for transport of vapour from the source chamber to the growth chambers, wherein the source chamber is thermally decoupled from the growth chambers.
摘要翻译：本发明涉及用于在一个生长循环中产生多个单晶的气相晶体生长的装置，包括一个中心源室，多个生长室，适于将蒸气从源室输送到生长的多个通道装置室，其中源室与生长室热分离。

74. 发明授权

US07862657B2 Crystal growth method and apparatus 失效
标题翻译：晶体生长方法和装置
公开(公告)号：US07862657B2
公开(公告)日：2011-01-04
申请号：US11782052
申请日：2007-07-24
申请人： Masaaki Onomura , Yoshiyuki Harada
发明人： Masaaki Onomura , Yoshiyuki Harada
IPC分类号： C30B35/00 , C23C16/54
CPC分类号： C30B29/40 , C23C16/45572 , C23C16/45576 , C23C16/4584 , C30B25/165 , C30B29/403 , H01L21/0254 , H01L21/02579 , H01L21/0262 , Y10T117/10 , Y10T117/1016
摘要： A crystal growth method for forming a semiconductor film, the method includes: while revolving one or more substrates about a rotation axis, passing raw material gas and carrier gas from the rotation axis side in a direction substantially parallel to a major surface of the substrate. The center of the substrate is located on a side nearer to the rotation axis than a position at which growth rate of the semiconductor film formed by thermal decomposition of the raw material gas is maximized.
摘要翻译：一种用于形成半导体膜的晶体生长方法，所述方法包括：在围绕旋转轴线旋转一个或多个基板的同时，使基板平行于基板的旋转轴侧的原料气体和载气从基板平行。与通过原料气体的热分解形成的半导体膜的生长速度最大的位置相比，基板的中心位于比旋转轴更靠近的一侧。

75. 发明申请

US20100319611A1 Method and apparatus for controlling the growth process of a monocrystalline silicon ingot 有权
标题翻译：用于控制单晶硅锭生长过程的方法和装置
公开(公告)号：US20100319611A1
公开(公告)日：2010-12-23
申请号：US12456552
申请日：2009-06-18
申请人： Benno Orschel , Keiichi Takanashi
发明人： Benno Orschel , Keiichi Takanashi
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/26 , G01B11/08 , G06T7/12 , G06T2207/30148 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： The present invention provides a method and apparatus for controlling the growth of a silicon ingot in which the diameter of the growing silicon ingot can be accurately measured. A camera captures an image of the interface ring between the growing silicon ingot and the silicon melt. An image processor extracts local intensity maxima from the captured image, which are then digitized into an image data which comprises attributes of the pixels forming the local intensity maxima. An analyzer statistically analyzes the image data to derive parameters of an equation statistically simulating the interface ring. A probabilistic filter conducts the statistical analysis on the equation in which the respective pixels are weighted by their weight factors. The weight factor functions to attenuate the effect of noises caused by pixels which do not represent the interface ring. The statistical analysis may be repeated, using the renewed parameters, to progressively attenuate the effect of the noises to thereby obtain a satisfactorily accurate diameter of the silicon ingot.
摘要翻译：本发明提供了一种用于控制硅锭生长的方法和装置，其中可以精确地测量生长的硅锭的直径。相机捕获生长的硅锭和硅熔体之间的界面环的图像。图像处理器从捕获的图像中提取局部强度最大值，然后数字化为包括形成局部强度最大值的像素的属性的图像数据。分析仪统计分析图像数据，得出统计模拟界面环的方程式的参数。概率滤波器对各个像素的权重因子加权的方程进行统计分析。权重因子用于衰减由不表示接口环的像素引起的噪声的影响。可以使用更新的参数重复统计分析来逐渐衰减噪声的影响，从而获得令人满意的硅锭的精确直径。

76. 发明授权

US07815736B2 Supporting apparatus for supporting a growing single crystal of semiconductor material, and process for producing a single crystal 失效
标题翻译：用于支撑日益增长的半导体材料单晶的支撑装置，以及用于制造单晶的工艺
公开(公告)号：US07815736B2
公开(公告)日：2010-10-19
申请号：US11509408
申请日：2006-08-24
申请人： Dieter Knerer
发明人： Dieter Knerer
IPC分类号： C30B35/00 , C30B15/00
CPC分类号： C30B15/30 , C30B29/06 , Y10S117/902 , Y10S117/911 , Y10T117/10 , Y10T117/1024 , Y10T117/1032 , Y10T117/1072
摘要： An apparatus for supporting a single crystal during Czochralski crystal pulling below a thickened crystal neck has lower bearing surface(s) with a central opening inscribable with a horizontal circle of diameter D1, centered on a vertical axis, the bearing surface(s) connected by connecting element(s) to minimally one securing element for securing to a crystal pulling lifting device, the connecting elements arranged to provide a clear-space in the region above the bearing surface(s) in which a circle of diameter D2 centered on the vertical axis (D2>D1) is inscribable over a length of the vertical axis. The unitary apparatus is useful for crystal ingot growth by immersion into the semiconductor melt prior to growth of a Dash neck and a thickening of the Dash neck. The apparatus is then raised to support the crystal by bearing against the bottom of the thickening.
摘要翻译：一种用于在Czochralski水晶拉伸加厚的水晶颈部之下支撑单晶的装置具有较低的支承表面，其中心开口具有可垂直于中心的直径为D1的水平圆形的中心开口，所述支承表面通过连接元件到最小限度的一个固定元件，用于固定到提拉提升装置，连接元件布置成在支承表面上方的区域中提供透明空间，其中以直径为中心的直径为D2的圆轴（D2> D1）可以在垂直轴的长度上刻录。该单一设备可用于通过浸入半导体熔体中的晶锭生长，并在破裂颈部生长之前和Dash颈部增厚。然后将装置升起以通过支承增厚件的底部来支撑晶体。

77. 发明申请

US20100229796A1 Manufacturing apparatus of polycrystalline silicon 有权
标题翻译：多晶硅制造装置
公开(公告)号：US20100229796A1
公开(公告)日：2010-09-16
申请号：US12659359
申请日：2010-03-05
申请人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
发明人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
IPC分类号： C23C16/24
CPC分类号： C23C16/24 , C01B33/035 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016
摘要： An apparatus for manufacturing polycrystalline silicon whereby raw-material gas is supplied to one or more heated silicon seed rods provided vertically in a reactor so as to deposit the polycrystalline silicon on a surface of the silicon seed rod, having a seed rod holding member, made of conductive material, having a holding hole in which a lower end of the silicon seed rod is inserted, the holding hole having a horizontal cross-sectional shape with at least two corners, and the holding member having a screw hole extending from the outer surface of the seed rod holding member to at least the holding hole and formed at the location of at least two corners of the holding hole; and a fixing screw which fixes the silicon seed rod and is threaded through at least one of the screw holes.
摘要翻译：一种用于制造多晶硅的装置，其中将原料气体供应到在反应器中垂直设置的一个或多个加热的硅种子棒，以便将多晶硅沉积在具有种子棒保持构件的硅种子棒的表面上，的导电材料，其具有插入硅棒的下端的保持孔，所述保持孔具有至少两个角的水平横截面形状，并且所述保持构件具有从所述外表面延伸的螺纹孔将所述种子棒保持构件的至少所述保持孔保持在所述保持孔的至少两个角部的位置，以及固定螺钉，其固定硅籽晶杆并穿过至少一个螺钉孔。

78. 发明申请

US20100212582A1 MODIFICATION PROCESS OF SYNTHETIC SILICA POWDER AND ITS QUARTZ GLASS PRODUCT 有权
标题翻译：合成二氧化硅粉及其QUARTZ玻璃产品的改性方法
公开(公告)号：US20100212582A1
公开(公告)日：2010-08-26
申请号：US12768904
申请日：2010-04-28
申请人： Masanori FUKUI , Takahiro SATOH
发明人： Masanori FUKUI , Takahiro SATOH
IPC分类号： C30B35/00
CPC分类号： C30B35/002 , C03B19/1065 , C03B2201/04 , C03B2201/20 , C03C1/026 , C30B15/10 , Y10T117/10 , Y10T428/13 , Y10T428/131 , Y10T428/1317
摘要： A modification process of the synthetic quartz powder, which can make a quartz glass product hardly having bubbles at the time of fusing, is provided, along with a modification process of the synthetic quartz powder and a glass product using said modified quartz powder are provided, wherein the synthetic quartz powder is kept in helium atmosphere at least in the temperature falling process, when the amorphous synthetic quartz powder produced by the sol-gel method is carried out by heat treatment in a vacuum furnace at more than the degas temperature and less than the baking temperature, wherein the highest temperature in the helium atmosphere is preferably set to from more than 700° C. to less than 1400° C., and the helium atmosphere is kept to less than 400° C.
摘要翻译：本发明提供可以使石英玻璃制品在熔融时几乎不具有气泡的合成石英粉末的改性方法，以及使用所述改性石英粉末的合成石英粉末和玻璃制品的改性方法，至少在降温过程中，将合成石英粉保存在氦气氛中，当通过溶胶 - 凝胶法制造的无定形合成石英粉末在真空炉中通过在脱气温度下进行热处理并且小于烘烤温度，其中氦气氛中的最高温度优选设定为大于700℃至小于1400℃，氦气保持在小于400℃。

79. 发明授权

US07779890B2 Method and apparatus for production of a cast component 有权
标题翻译：用于生产铸件的方法和装置
公开(公告)号：US07779890B2
公开(公告)日：2010-08-24
申请号：US11894221
申请日：2007-08-20
申请人： Donald J. Frasier , M. Eric Schlienger , Patrick A. Vessely
发明人： Donald J. Frasier , M. Eric Schlienger , Patrick A. Vessely
IPC分类号： B22D41/00
CPC分类号： C30B11/00 , B22D47/00 , B29C64/165 , B29C64/40 , B33Y80/00 , C30B11/002 , C30B11/14 , C30B29/52 , G03F7/0037 , G03F7/0047 , Y10S117/90 , Y10T117/10 , Y10T117/1016
摘要： A system for producing cast components from molten metal. One form of the present invention includes a system for the precision pouring of molten metal within a casting mold. The precision pouring system is driven by a pressure differential.
摘要翻译：一种用于从熔融金属生产铸件的系统。本发明的一种形式包括用于在铸模内精确浇注熔融金属的系统。精密浇注系统由压差驱动。

80. 发明申请

US20100180815A1 CRUCIBLE AND METHOD FOR PULLING A SINGLE CRYSTAL 有权
标题翻译：用于拉伸单晶的可塑性和方法
公开(公告)号：US20100180815A1
公开(公告)日：2010-07-22
申请号：US12692456
申请日：2010-01-22
申请人： Masaru Sato , Masaki Morikawa
发明人： Masaru Sato , Masaki Morikawa
IPC分类号： C30B15/12 , C30B15/10
CPC分类号： C30B15/10 , Y10S117/90 , Y10T117/10 , Y10T117/1032 , Y10T117/1052
摘要： A crucible for pulling a silicon single crystal has a double structure comprising a silica crucible and a graphite crucible covering an outside of the silica crucible, wherein the silica crucible is provided at its opening end portion with an inward falling prevention means for imparting a radially outward force to a body portion of the silica crucible.
摘要翻译：用于拉硅单晶的坩埚具有包括二氧化硅坩埚和覆盖在二氧化硅坩埚外部的石墨坩埚的双重结构，其中，二氧化硅坩埚在其开口端部设置有向内防止装置，用于使径向向外对二氧化硅坩埚的主体部分的力。

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