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71. 发明授权

US06924717B2 Tapered electrode in an acoustic resonator 有权
标题翻译：锥形电极在声谐振器中
公开(公告)号：US06924717B2
公开(公告)日：2005-08-02
申请号：US10607764
申请日：2003-06-30
申请人： Eyal Ginsburg , Li-Peng Wang , Alexander Talalyevsky , Eyal Bar-Sadeh , Doron Rubin
发明人： Eyal Ginsburg , Li-Peng Wang , Alexander Talalyevsky , Eyal Bar-Sadeh , Doron Rubin
IPC分类号： H03H9/13 , H03H9/15 , H03H9/54
CPC分类号： H03H9/02133 , H03H9/132
摘要： An apparatus and method to provide a tapered electrode in an acoustic resonator. A piezoelectric (PZ) layer, such as Aluminum Nitride (AIN), is formed over a bottom electrode having a tapered end. A top electrode is positioned on the PZ layer. The tapered end of the bottom electrode creates a mild topography to the under layer of the PZ material to prevent cracking in the PZ layer. The tapered end also decreases acoustic losses in the acoustic resonator because the PZ grains are highly oriented. In one embodiment, the acoustic resonator is a film bulk acoustic resonator (FBAR).
摘要翻译：一种在声谐振器中提供锥形电极的装置和方法。在具有锥形端的底部电极上形成诸如氮化铝（AlN）的压电（PZ）层。顶部电极位于PZ层上。底部电极的锥形端在PZ材料的下层形成温和的形貌以防止PZ层中的开裂。由于PZ晶粒是高度取向的，锥形端部也降低了声谐振器中的声学损耗。在一个实施例中，声谐振器是膜体声波谐振器（FBAR）。

72. 发明申请

US20050151450A1 Crystal unit 有权
标题翻译：水晶单位
公开(公告)号：US20050151450A1
公开(公告)日：2005-07-14
申请号：US11035313
申请日：2005-01-13
申请人： Mitoshi Umeki , Kenichi Kikuchi , Keisuke Hirano
发明人： Mitoshi Umeki , Kenichi Kikuchi , Keisuke Hirano
IPC分类号： H01L41/04 , H02N2/00 , H03H3/04 , H03H9/13 , H03H9/17 , H03H9/19 , H03H9/215
CPC分类号： H03H9/171 , H03H3/04 , H03H9/131 , H03H9/132 , H03H2003/0407
摘要： A crystal unit comprises an AT-cut crystal blank, and an excitation electrode formed on each of opposing main surfaces of the crystal blank in an oscillation region of the crystal blank. The ratio b/a is 0.014 or less, and preferably 0.012 or less where a represents the thickness of the crystal blank in the oscillation region and b represents the thickness of the excitation electrode. The thickness a is typically 5 μm or less.
摘要翻译：晶体单元包括AT切割晶体坯和在晶体坯的振荡区域中在晶体坯的相对的主表面上形成的激励电极。比率b / a为0.014以下，优选为0.012以下，其中a表示振荡区域中的结晶坯的厚度，b表示激发电极的厚度。厚度a通常为5um或更小。

73. 发明申请

US20050093658A1 Pass bandwidth control in decoupled stacked bulk acoustic resonator devices 有权
标题翻译：在解耦堆叠体声波谐振器装置中通过带宽控制
公开(公告)号：US20050093658A1
公开(公告)日：2005-05-05
申请号：US10965449
申请日：2004-10-13
申请人： John Larson , Stephen Ellis
发明人： John Larson , Stephen Ellis
IPC分类号： H03H9/02 , H03H9/13 , H03H9/58 , H03H9/60 , H03H9/56
CPC分类号： H03H9/605 , H03H9/02102 , H03H9/132 , H03H9/175 , H03H9/584 , H03H9/587 , H03H9/589
摘要： The decoupled stacked bulk acoustic resonator (DSBAR) device has a lower film bulk acoustic resonator (FBAR), an upper FBAR stacked on the lower FBAR, and an acoustic decoupler between the FBARs. Each of the FBARs has opposed planar electrodes and a layer of piezoelectric material between the electrodes. The acoustic decoupler has acoustic decoupling layers of acoustic decoupling materials having different acoustic impedances. The acoustic impedances and thicknesses of the acoustic decoupling layers determine the acoustic impedance of the acoustic decoupler, and, hence, the pass bandwidth of the DSBAR device. Process-compatible acoustic decoupling materials can then be used to make acoustic decouplers with acoustic impedances (and pass bandwidths) that are not otherwise obtainable due to the lack of process-compatible acoustic decoupling materials with such acoustic impedances.
摘要翻译：解耦堆叠体声波谐振器（DSBAR）器件具有较低的膜体声波谐振器（FBAR），堆叠在下FBAR上的上FBAR和FBAR之间的声耦合器。每个FBAR具有相对的平面电极和电极之间的压电材料层。声解耦器具有具有不同声阻抗的声去耦材料的声去耦层。声学解耦层的声阻抗和厚度决定了声耦合器的声阻抗，并因此决定了DSBAR器件的通带宽度。然后，由于缺乏具有这种声阻抗的工艺兼容的声学解耦材料，因此可以使用与工艺兼容的声学解耦材料来制造具有声阻抗（和通过带宽）的声学去耦器。

74. 发明申请

US20050093657A1 Film acoustically-coupled transformer with reverse C-axis piezoelectric material 有权
标题翻译：具有反向C轴压电材料的薄膜声耦合变压器
公开(公告)号：US20050093657A1
公开(公告)日：2005-05-05
申请号：US10836653
申请日：2004-04-29
申请人： John Larson , Yury Oshmyansky
发明人： John Larson , Yury Oshmyansky
IPC分类号： H03H9/17 , H03H9/13 , H03H9/60 , H03H9/58
CPC分类号： H03H9/605 , H01L2224/48091 , H01L2224/49175 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , H01L2924/00014
摘要： An embodiment of the acoustically-coupled transformer has first and second stacked bulk acoustic resonators (SBARs) each having a stacked pair of film bulk acoustic resonators (FBARs) with an acoustic decoupler between the FBARs. Each FBAR has opposed planar electrodes with piezoelectric material between the electrodes. A first electrical circuit connects one FBARs of the first SBAR to one FBAR of the second SBAR, and a second electrical circuit connects the other FBAR of the first SBAR to the other FBAR of the second SBAR. The c-axis of the piezoelectric material of one of the FBARs is opposite in direction to the c-axes of the piezoelectric materials of the other three FBARs. This arrangement substantially reduces the amplitude of signal-frequency voltages across the acoustic decouplers and significantly improves the common mode rejection of the transformer. This arrangement also allows conductive acoustic decouplers to be used, increasing the available choice of acoustic decoupler materials.
摘要翻译：声耦合变压器的一个实施例具有第一和第二堆叠的体声波谐振器（SBAR），每个具有堆叠的一对薄膜体声波谐振器（FBAR），在FBAR之间具有声耦合器。每个FBAR在电极之间具有与压电材料相对的平面电极。第一电路将第一SBAR的一个FBAR连接到第二SBAR的一个FBAR，并且第二电路将第一SBAR的另一FBAR连接到第二SBAR的另一FBAR。 FBAR中的一个的压电材料的c轴与其他三个FBAR的压电材料的c轴方向相反。这种布置大大降低了声耦合器上的信号频率电压的振幅，并显着地改善了变压器的共模抑制。这种布置还允许使用导电声分离器，从而增加声分离器材料的可用选择。

75. 发明授权

US06788170B1 Resonator structure having a dampening material and a filter having such a resonator structure 有权
标题翻译：具有阻尼材料的谐振器结构和具有这种谐振器结构的滤波器
公开(公告)号：US06788170B1
公开(公告)日：2004-09-07
申请号：US10031533
申请日：2002-04-16
申请人： Jyrki A. Kaitila , Markku Ylilammi , Juha Ellä
发明人： Jyrki A. Kaitila , Markku Ylilammi , Juha Ellä
IPC分类号： H03H954
CPC分类号： H03H9/173 , H03H9/132
摘要： Resonator structure (600, 800, 810, 820) comprises two conductor layers (110, 120) and a piezoelectric layer (100) in between the conductor layers, and said conductor layers and piezoelectric layer extend over a first area of the resonator structure, which first area is a piezoelectrically excitable area of the resonator structure. The resonator structure is characterized in that it is arranged to have a zone (603, 801, 803, 804), which confines a center area (604, 802) within the first area of the resonator, and the layer structure in the zone is arranged to be such that piezoelectrically excited vibrations are dampened more effectively in the zone than in the center area.
摘要翻译：谐振器结构（600,800,810,820）在导体层之间包括两个导体层（110,120）和压电层（100），并且所述导体层和压电层在谐振器结构的第一区域上延伸，该第一区域是谐振器结构的压电可兴奋区域。谐振器结构的特征在于，其布置成具有将中心区域（604,802）限定在谐振器的第一区域内的区域（603,801,803,804），并且该区域中的层结构是布置成使得在区域中比在中心区域更有效地抑制压电激发的振动。

76. 发明申请

US20040155716A1 Piezoelectric vibration element and piezoelectric filter 失效
标题翻译：压电振动元件和压电滤波器
公开(公告)号：US20040155716A1
公开(公告)日：2004-08-12
申请号：US10473761
申请日：2004-02-19
发明人： Yukinori Sasaki
IPC分类号： H03B005/32
CPC分类号： H03H9/177 , H03H9/132 , H03H9/562 , H03H9/581
摘要： A piezoelectric oscillator using zinc oxide as a piezoelectric plate which eliminates unwanted resonance called inharmonic overtone by optimizing ratio Le/H of driving electrode length Le to oscillator thickness H. Ratio Le/H is set between 4 and 100 in the piezoelectric oscillator polarized in a thickness direction of a piezoelectric plate and using thickness extension vibration as main vibration or the piezoelectric oscillator polarized in a length direction of the piezoelectric plate and using thickness shear vibration as main vibration. This achieves stable characteristic because no unwanted resonance exists between the resonance frequency and anti-resonance frequency of the main vibration.
摘要翻译：使用氧化锌作为压电板的压电振荡器，其通过优化驱动电极长度Le与振荡器厚度H的比率Le / H来消除不需要的共振称为非调谐泛音。在压电振荡器中将比率Le / H设置在4和100之间，压电板的厚度方向，使用厚度延伸振动作为主振动，或压电振荡器在压电板的长度方向上极化并使用厚度剪切振动作为主振动。这实现了稳定的特性，因为在主振动的谐振频率和反共振频率之间不存在不需要的共振。

77. 发明授权

US06700303B2 Piezoelectric element 有权
标题翻译：压电元件
公开(公告)号：US06700303B2
公开(公告)日：2004-03-02
申请号：US10322936
申请日：2002-12-18
申请人： Akira Ando , Masahiko Kimura , Takuya Sawada
发明人： Akira Ando , Masahiko Kimura , Takuya Sawada
IPC分类号： H01L4108
CPC分类号： H03H9/178 , B06B1/0611 , H03H9/02031 , H03H9/02086 , H03H9/132
摘要： A piezoelectric element includes a plurality of piezoelectric layers composed of a piezoelectric material containing Sr, Bi, Ti, and O, at least three vibration electrodes opposing each other, each disposed among the piezoelectric layers, and an energy-confining region formed in a region in which the vibration electrodes overlap, the energy-confining region being parallel to the planes of the vibration electrodes and exciting an n-th order longitudinal thickness vibration. The maximum length L of a secant between two intersections on the periphery of the energy-confining region and the distance t between the topmost vibration electrode and the bottommost vibration electrode satisfy the relationship nL/t of less than 10. The piezoelectric element is thermally stable and has a narrow allowable error.
摘要翻译：压电元件包括由压电材料构成的多个压电层，所述压电材料包含Sr，Bi，Ti和O，至少三个彼此相对的振动电极，各自设置在压电层中，并且形成在区域中的能量限制区域其中振动电极重叠，能量限制区域平行于振动电极的平面并激发n阶纵向厚度的振动。能量约束区域周边的两个交叉点之间的割线的最大长度L和最上面的振动电极与最底部振动电极之间的距离t满足小于10的关系nL / t。压电元件是热稳定的并且具有窄的允许误差。

78. 发明申请

US20030132811A1 Piezoelectric device and acousto-electric transducer and method for manufacturing the same 有权
标题翻译：压电器件和声电换能器及其制造方法
公开(公告)号：US20030132811A1
公开(公告)日：2003-07-17
申请号：US10333130
申请日：2003-01-16
发明人： Yoshiaki Nagaura
IPC分类号： H03B005/32
CPC分类号： H03H9/02157 , H01L41/337 , H03H3/02 , H03H9/132 , H03H9/19 , Y10T29/49005 , Y10T29/4908
摘要： A lens shape piezoelectric device thinner than the manufacture limit thickness, which is conventionally difficult to manufacture, and a method for manufacturing the same. The piezoelectric device has a oscillation part of at least two steps where one side thereof is planar and opposite side is thickest at the peripheral holding portion and thinner toward the central portion. A piezoelectric element of another mode has a oscillation part of at least two steps where the peripheral holding portion is thickest on both sides and the thickness decreases toward the central portion. In these piezoelectric devices, at least one side of the thinnest central portion of the oscillation part has a convex lens shape. A pair of electrodes are vacuum deposited in the center these oscillation parts on both sides, and a gold wire is led as a lead wire from each electrode.
摘要翻译：比通常难以制造的制造极限厚度薄的透镜形状的压电元件及其制造方法。压电装置具有至少两个台阶的振荡部分，其一侧是平面的，相对侧在周边保持部分处最厚，并且朝向中心部分较薄。另一模式的压电元件具有至少两个台阶的振荡部分，其中外围保持部分在两侧最厚，并且厚度朝向中心部分减小。在这些压电装置中，振动部的最薄中央部的至少一侧具有凸透镜形状。一对电极在两侧的这些振动部分的中心真空沉积，并且金线作为引线从每个电极引导。

79. 发明授权

US06381820B1 Semiconductor bulk acoustic resonator with suppressed lateral modes 有权
标题翻译：具有抑制横向模式的半导体体声波谐振器
公开(公告)号：US06381820B1
公开(公告)日：2002-05-07
申请号：US09407199
申请日：1999-09-28
申请人： Drew Cushman , Jay D. Crawford
发明人： Drew Cushman , Jay D. Crawford
IPC分类号： H01L4100
CPC分类号： H03H9/02118 , H03H9/132 , Y10T29/42
摘要： A semiconductor bulk acoustic resonator (SBAR) with improved passband insertion loss and phase performance characteristics making it suitable for use in a wider variety of narrowband filtering applications. The SBAR is configured to suppress lateral propagating acoustical wave mode. The lateral acoustical wave modes are controlled by varying the lateral dimension of the resonator electrodes and or utilizing a viscous acoustic damping material, such as a viscoelastic material, such as polyimide, along at least~a portion of the perimeter of the electrodes to attenuate reflections of the lateral acoustic modes at the electrode edges back into the electrode region.
摘要翻译：具有改进的通带插入损耗和相位性能特性的半导体体声波谐振器（SBAR），使其适用于更广泛种类的窄带滤波应用。 SBAR被配置为抑制横向传播声波模式。横向声波模式通过改变谐振器电极的横向尺寸和/或利用粘性阻尼材料（例如粘弹性材料，例如聚酰亚胺）沿着电极周边的至少一部分来衰减反射来控制的电极边缘处的横向声学模式返回到电极区域中。

80. 发明申请

US20020030424A1 High frequency piezoelectric resonator 失效
标题翻译：高频压电谐振器
公开(公告)号：US20020030424A1
公开(公告)日：2002-03-14
申请号：US09746600
申请日：2000-12-21
申请人： TOYO COMMUNICATION EQUIPMENT CO., LTD.
发明人： Hirokazu Iwata
IPC分类号： H01L041/04
CPC分类号： H03H9/174 , H03H9/132 , H03H9/177 , H03H9/564
摘要： Disclosed is a piezoelectric resonator that has a piezoelectric plate that has formed thereon a pair of main electrodes and has formed thereon a second electrode surrounding the peripheral edge of the main electrode with a gap being provided between the second electrode and a peripheral edge of the main electrode. The material of the main electrode and the material of the second electrode are differentiated from each other. As the material of the second electrode there is used a material the density of that is lower than the material of the main electrode. With this construction, there is obtained means for suppressing the occurrence of spurious due to an inharmonic mode generating in the high frequency piezoelectric resonator.
摘要翻译：公开了一种压电谐振器，其具有在其上形成有一对主电极并且在其上形成有围绕主电极的周缘的第二电极的压电板，在第二电极和主体的周边之间设置有间隙电极。主电极的材料和第二电极的材料彼此不同。作为第二电极的材料，使用其密度低于主电极的材料的材料。利用这种结构，获得了用于抑制由于在高频压电谐振器中产生不协调模式而引起的寄生的发生的装置。

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