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71. 发明申请

US20190253038A1 5G n79 WI-FI ACOUSTIC TRIPLEXER CIRCUIT 审中-公开
公开(公告)号：US20190253038A1
公开(公告)日：2019-08-15
申请号：US16391191
申请日：2019-04-22
申请人： Akoustis, Inc.
发明人： Rohan W. HOULDEN , David M. AICHELE , Jeffrey B. SHEALY
IPC分类号： H03H9/70 , H03H9/02 , H03H9/205 , H03H9/58 , H03H9/60 , H03H9/00 , H03H9/54 , H03H3/02
CPC分类号： H03H9/703 , H03H3/02 , H03H9/0095 , H03H9/02031 , H03H9/02118 , H03H9/0523 , H03H9/0533 , H03H9/1014 , H03H9/205 , H03H9/542 , H03H9/581 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , H03H2003/027
摘要： An RF triplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

72. 发明申请

US20190007021A1 PIEZOELECTRIC THIN FILM RESONATOR AND FABRICATION METHOD OF THE SAME, FILTER, AND MULTIPLEXER 审中-公开
公开(公告)号：US20190007021A1
公开(公告)日：2019-01-03
申请号：US16008845
申请日：2018-06-14
申请人： TAIYO YUDEN CO., LTD.
发明人： Shinji TANIGUCHI , Hiroomi KANEKO , Hiroshi KAWAKAMI , Tokihiro NISHIHARA
IPC分类号： H03H9/02 , H03H3/02 , H03H9/13 , H03H9/17 , H03H9/56 , H03H9/70
CPC分类号： H03H9/02102 , H03H3/02 , H03H9/02015 , H03H9/02031 , H03H9/02118 , H03H9/131 , H03H9/173 , H03H9/175 , H03H9/178 , H03H9/562 , H03H9/564 , H03H9/568 , H03H9/706 , H03H2003/021 , H03H2003/025
摘要： A piezoelectric thin film resonator includes: a substrate; lower and upper electrodes located on the substrate; a piezoelectric film that has a lower piezoelectric film mainly composed of aluminum nitride and an upper piezoelectric film mainly composed of aluminum nitride, the lower piezoelectric film and the upper piezoelectric film being in contact with each other in at least a part of a resonance region where the lower electrode and the upper electrode face each other across at least a part of the piezoelectric film, and a fluorine concentration at a boundary face with which the lower piezoelectric film and the upper piezoelectric film are in contact being 0.03 atomic % or less; and an insulating film that is located between the lower piezoelectric film and the upper piezoelectric film in a region other than the at least a part of the resonance region and contains silicon oxide.

73. 发明申请

US20180309425A1 5.6 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT 审中-公开
公开(公告)号：US20180309425A1
公开(公告)日：2018-10-25
申请号：US16020635
申请日：2018-06-27
申请人： Akoustis, Inc.
发明人： Jeffrey B. SHEALY , Rohan W. HOULDEN , Shawn R. GIBB , Mary WINTERS , Ramakrishna VETURY
IPC分类号： H03H9/02 , H03H9/54
CPC分类号： H03H3/02 , H03H9/02015 , H03H9/02118 , H03H9/0523 , H03H9/105 , H03H9/173 , H03H9/175 , H03H9/54 , H03H2003/021 , H03H2003/025
摘要： An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

74. 发明授权

US09608589B2 Method of forming acoustic resonator using intervening seed layer 有权
公开(公告)号：US09608589B2
公开(公告)日：2017-03-28
申请号：US12911986
申请日：2010-10-26
申请人： Kevin J. Grannen , Chris Feng , Phil Nikkel , John Choy
发明人： Kevin J. Grannen , Chris Feng , Phil Nikkel , John Choy
IPC分类号： H03H3/02 , H01L41/314 , H01L41/317 , H03H9/17
CPC分类号： H03H3/02 , H01L41/314 , H01L41/317 , H01L41/319 , H03H9/173 , H03H9/175 , H03H2003/021 , H03H2003/025 , Y10T29/42
摘要： A method of forming an acoustic resonator includes forming a seed layer on a first electrode layer, forming a piezoelectric layer directly on a surface of the seed layer, and forming a second electrode layer on the piezoelectric layer. The piezoelectric layer includes multiple crystals of piezoelectric material, and the seed layer causes crystal axis orientations of the crystals to be substantially perpendicular to the surface of the seed layer.

75. 发明申请

US20170063325A1 DEVICES WITH SPECIFIC TERMINATION ANGLES IN TITANIUM TUNGSTEN LAYERS AND METHODS FOR FABRICATING THE SAME 审中-公开
标题翻译：在钛金属层中具有特定终止角的装置及其制造方法
公开(公告)号：US20170063325A1
公开(公告)日：2017-03-02
申请号：US15349207
申请日：2016-11-11
申请人： Texas Instruments Incorporated
发明人： Neng Jiang , Maciej Blasiak , Nicholas S. Dellas , Brian E. Goodlin
IPC分类号： H03H9/02 , H03H9/17
CPC分类号： H03H9/02015 , H01L21/32056 , H01L21/32136 , H01L21/32139 , H01L29/0657 , H01L29/41725 , H03H3/02 , H03H9/02102 , H03H9/02133 , H03H9/175 , H03H9/178 , H03H2003/025
摘要： Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.
摘要翻译：在钛钨层中形成终止角的方法包括提供钛钨层并将抗蚀剂材料施加到钛钨层上。光抗蚀剂材料在散焦条件下曝光以产生抗蚀剂掩模，其中曝光的光刻胶材料的边缘对应于倾斜端接。用蚀刻材料蚀刻钛钨层，其中蚀刻材料至少部分地蚀刻在散焦状态下暴露的光致抗蚀剂材料，并且其中蚀刻导致钛钨层中的倾斜终止。

76. 发明申请

US20160300693A1 SLOPED TERMINATION IN MOLYBDENUM LAYERS AND METHOD OF FABRICATING 有权
标题翻译：多晶硅层中的拉伸终止及其制备方法
公开(公告)号：US20160300693A1
公开(公告)日：2016-10-13
申请号：US14682651
申请日：2015-04-09
申请人： Texas Instruments Incorporated
发明人： Neng Jiang , Elizabeth Costner Stewart , Nicholas S. Dellas
IPC分类号： H01J37/32 , H03H3/02
CPC分类号： H03H3/02 , H03H2003/025
摘要： A method of fabricating a sloped termination of a molybdenum layer includes providing the molybdenum layer and applying a photo resist material to the molybdenum layer. The photo resist material is exposed under a defocus condition to generate a resist mask having an edge portion. The molybdenum layer is etched at least at the edge portion of the resist mask to result in a sloped termination of the molybdenum layer.
摘要翻译：制造钼层的倾斜终端的方法包括提供钼层并将光抗蚀剂材料施加到钼层。光抗蚀剂材料在散焦条件下曝光以产生具有边缘部分的抗蚀剂掩模。至少在抗蚀剂掩模的边缘部分处蚀刻钼层，导致钼层的倾斜终止。

77. 发明授权

US09386388B2 Method of manufacturing stacked thin film piezoelectric filter 有权
标题翻译：堆叠薄膜压电滤波器的制造方法
公开(公告)号：US09386388B2
公开(公告)日：2016-07-05
申请号：US14492210
申请日：2014-09-22
申请人： Murata Manufacturing Co., Ltd.
发明人： Takashi Miyake
IPC分类号： H01R31/00 , H03H3/02 , H04R31/00 , H01L41/27 , H01L41/083 , H03H9/58 , H03H3/04
CPC分类号： H04R31/00 , H01L41/083 , H01L41/27 , H03H3/02 , H03H3/04 , H03H9/584 , H03H9/588 , H03H9/589 , H03H2003/023 , H03H2003/025 , H03H2003/0421 , H03H2003/0428 , H03H2003/0435 , H03H2003/0442 , H04R2231/00 , Y10T29/42 , Y10T29/49004 , Y10T29/49005 , Y10T29/49147 , Y10T29/49155
摘要： A method of manufacturing a stacked thin film piezoelectric filter includes the steps of forming a lower thin film piezoelectric resonator on a substrate, measuring and adjusting a frequency of the lower thin film piezoelectric resonator, forming an acoustic coupling layer on the lower thin film piezoelectric resonator where the frequency of the lower thin film piezoelectric resonator has been adjusted, forming an upper thin film piezoelectric resonator on the acoustic coupling layer, and measuring and adjusting a frequency of the stacked thin film piezoelectric filter.
摘要翻译：层叠薄膜压电滤波器的制造方法包括以下步骤：在基板上形成下薄膜压电谐振器，测量和调节下薄膜压电谐振器的频率，在下薄膜压电谐振器上形成声耦合层其中已经调整了下薄膜压电谐振器的频率，在声耦合层上形成上薄膜压电谐振器，并且测量和调节叠层薄膜压电滤波器的频率。

78. 发明授权

US09337799B2 Selective tuning of acoustic devices 有权
标题翻译：声学设备的选择性调谐
公开(公告)号：US09337799B2
公开(公告)日：2016-05-10
申请号：US13667918
申请日：2012-11-02
申请人： QUALCOMM MEMS Technologies, Inc.
发明人： Philip Jason Stephanou , Chengjie Zuo , Changhan Hobie Yun , Sang-June Park , Charles Chengyea Leu , Jonghae Kim , Ravindra V. Shenoy
IPC分类号： H03H9/02 , H03H3/02
CPC分类号： H03H9/02149 , H03H3/02 , H03H2003/021 , H03H2003/025 , H03H2003/028 , Y10T29/42
摘要： This disclosure provides implementations of methods, apparatus and systems for producing acoustic wave devices and for selectively modifying one or more acoustic or electromechanical characteristics of such devices. In one aspect, a method includes depositing a structural layer over a substrate. The structural layer includes a plurality of structural portions, each being positioned over a corresponding device region. The method also includes arranging a mask layer over the structural layer. The mask layer includes a plurality of mask portions, each including a number of mask openings that expose a corresponding region of the structural portion. The method also includes accelerating dopant particles toward the mask layer. The accelerated dopant particles that proceed through the mask openings are impacted into the corresponding structural portion. The impacted dopant particles modify material properties in the structural portion, which then effect a change in the acoustic or electromechanical characteristics of the acoustic wave device.
摘要翻译：本公开提供了用于产生声波装置并用于选择性地修改这种装置的一个或多个声学或机电特性的方法，装置和系统的实现。一方面，一种方法包括在衬底上沉积结构层。结构层包括多个结构部分，每个结构部分位于相应的装置区域上。该方法还包括在结构层上布置掩模层。掩模层包括多个掩模部分，每个掩模部分包括暴露结构部分的对应区域的多个掩模开口。该方法还包括向掩模层加速掺杂剂颗粒。进入掩模开口的加速掺杂剂颗粒被冲击到相应的结构部分。受影响的掺杂剂颗粒改变结构部分中的材料性质，其然后影响声波装置的声学或机电特性的变化。

79. 发明授权

US09219517B2 Temperature compensated bulk acoustic wave devices using over-moded acoustic reflector layers 有权
标题翻译：温度补偿的体声波器件使用过调式反射层
公开(公告)号：US09219517B2
公开(公告)日：2015-12-22
申请号：US14044782
申请日：2013-10-02
申请人： TriQuint Semiconductor, Inc.
发明人： Robert Aigner , Alireza Tajic
IPC分类号： H03H9/17 , H01L41/22 , H04B1/40 , H03H3/02 , H03H9/02
CPC分类号： H04B1/40 , H03H3/02 , H03H9/02102 , H03H9/175 , H03H2003/025 , Y10T29/42
摘要： Embodiments of apparatuses, systems and methods relating to temperature compensated bulk acoustic wave devices. In some embodiments, temperature compensated bulk acoustic wave devices are described with an over-moded reflector layer.
摘要翻译：与温度补偿体声波装置相关的装置，系统和方法的实施例。在一些实施例中，使用过调制的反射器层来描述温度补偿的体声波器件。

80. 发明申请

US20150094000A1 Temperature Compensated Bulk Acoustic Wave Devices Using Over-Moded Acoustic Reflector Layers 有权
标题翻译：温度补偿体声波器件使用过度调制的声反射层
公开(公告)号：US20150094000A1
公开(公告)日：2015-04-02
申请号：US14044782
申请日：2013-10-02
申请人： TriQuint Semiconductor, Inc.
发明人： Robert Aigner , Alireza Tajic
IPC分类号： H03H9/54 , H03H3/02 , H04B1/40
CPC分类号： H04B1/40 , H03H3/02 , H03H9/02102 , H03H9/175 , H03H2003/025 , Y10T29/42
摘要： Embodiments of apparatuses, systems and methods relating to temperature compensated bulk acoustic wave devices. In some embodiments, temperature compensated bulk acoustic wave devices are described with an over-moded reflector layer.
摘要翻译：与温度补偿体声波装置相关的装置，系统和方法的实施例。在一些实施例中，使用过调制的反射器层来描述温度补偿的体声波器件。

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