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    • 73. 发明授权
    • Charge-integration multilinear image sensor
    • 电荷积分多线性图像传感器
    • US08933495B2
    • 2015-01-13
    • US13359200
    • 2012-01-26
    • Frederic Mayer
    • Frederic Mayer
    • H01L27/148
    • H01L27/14856
    • The invention relates to time-delay and signal-integration linear image sensors (or TDI sensors). According to the invention, a pixel comprises a succession of several insulated gates covering a semiconducting layer, the gates of one pixel being separated from one another and separated from the gates of an adjacent pixel of another line by narrow uncovered gaps of a gate and comprising a doped region of a second type of conductivity covered by a doped superficial region of the first type; the superficial regions are kept at one and the same reference potential; the width of the narrow gaps between adjacent gates is such that the internal potential of the region of the second type is modified in the whole width of the narrow gap when a gate sustains the alternations of potential necessary for the transfer of charges from one pixel to the following one.
    • 本发明涉及时间延迟和信号积分线性图像传感器(或TDI传感器)。 根据本发明,像素包括覆盖半导体层的一系列绝缘栅极,一个像素的栅极彼此分离,并且通过栅极的窄未覆盖的间隙与另一条线的相邻像素的栅极分离,并且包括 由第一类型的掺杂表面区域覆盖的第二类型电导率的掺杂区域; 表面区域保持一个相同的参考电位; 相邻栅极之间的窄间隙的宽度使得当栅极维持电荷从一个像素传输到电位所需的电位的变化时,第二类型的区域的内部电位在窄间隙的整个宽度上被修改 以下一个。
    • 74. 发明授权
    • Multilinear image sensor with charge integration
    • 具有电荷积分的多线性图像传感器
    • US08748954B2
    • 2014-06-10
    • US13514982
    • 2010-12-02
    • Frederic Mayer
    • Frederic Mayer
    • H01L31/062
    • H01L27/14856H01L27/14812
    • The invention relates to linear time-delay and integration sensors (or TDI sensors). According to the invention, adjacent pixels of the same rank comprise, alternately, at least one photodiode and one transfer gate adjacent to the photodiode, the photodiodes comprising a common reference region of a first conductivity type, in which an individual region of opposite conductivity type is formed, itself covered by a individual surface region of the first conductivity type, characterized in that the surface regions of two photodiodes located on either side of a transfer gate are electrically separated so as to be able to be brought to different potentials in order to create potential wells and potential barriers allowing accumulation and transfer of charges as desired.
    • 本发明涉及线性时间延迟和集成传感器(或TDI传感器)。 根据本发明,相同秩的相邻像素交替地包括与光电二极管相邻的至少一个光电二极管和一个传输门,光电二极管包括第一导电类型的公共参考区域,其中具有相反导电类型的单个区域 形成,其本身由第一导电类型的单个表面区域覆盖,其特征在于,位于传输门的任一侧的两个光电二极管的表面区域被电分离,以便能够被带到不同的电位,以便 创造潜在的井和潜在的障碍,允许根据需要累积和转移收费。
    • 78. 发明授权
    • CCD sensor with diagonal heat conducting straps
    • 具有对角导热带的CCD传感器
    • US5981933A
    • 1999-11-09
    • US10680
    • 1998-01-22
    • Savvas G. ChamberlainStacy R. KamaszSimon G. Ingram
    • Savvas G. ChamberlainStacy R. KamaszSimon G. Ingram
    • H01L27/148H04N3/15
    • H01L27/14856H01L27/14806
    • A CCD structure includes a substrate in which a plurality of buried channels have been formed and a heat conductor disposed transversely to the buried channels and defining a longitudinal direction. A first channel defines a channel direction. The heat conductor includes a first segment and a second segment separated by a gap from the first segment. The heat conductor further includes a tab connected to the first segment. In the structure the tab is characterized by an extent along a direction parallel to the longitudinal direction that is equal to an extent of the gap along the longitudinal direction, an extent along a direction perpendicular to the longitudinal direction that is equal to a width of the heat conductor, and a shape that is a parallelogram, preferrably a rectangle. In the structure the gap is characterized by a gap predetermined shape, size and orientation, and the tab is characterized by a tab predetermined shape, size and orientation. The tab predetermined shape, size and orientation is equal to the gap predetermined shape, size and orientation, respectively.
    • CCD结构包括其中已经形成有多个掩埋通道的基板和横向于埋设通道设置并限定纵向方向的热导体。 第一通道定义通道方向。 热导体包括第一部分和与第一部分间隔开的第二部分。 热导体还包括连接到第一段的突片。 在该结构中,突片的特征在于沿着与纵向方向平行的方向的程度等于沿着纵向方向的间隙的程度,沿垂直于纵向方向的方向的宽度等于 热导体和平行四边形的形状,优选为矩形。 在该结构中,间隙的特征在于间隙预定的形状,尺寸和取向,并且突片的特征在于突片预定的形状,尺寸和取向。 预定形状,尺寸和取向的突片分别等于间隙预定形状,尺寸和取向。