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71. 发明申请

US20020131217A1 Multichannel magnetic head using magnetoresistive effect 失效
标题翻译：多通道磁头采用磁阻效应
公开(公告)号：US20020131217A1
公开(公告)日：2002-09-19
申请号：US10092911
申请日：2002-03-07
申请人： Sony Corporation
发明人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara
IPC分类号： G11B005/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3103 , G11B5/3909 , G11B5/3948 , G11B5/3967
摘要： A multichannel magnetic head using magnetoresistive effect comprises a first magnetic shield and electrode (11), a second magnetic shield and electrode (12), the first and second magnetic shield and electrodes (11), (12) being opposed to each other, and a plurality of magnetoresistive effect type reproducing magnetic head elements arrayed between the first and second magnetic shield and electrodes (11) and (12), wherein the reproducing magnetic head elements formed of ferromagnetic tunnel type magnetoresistive effect elements are arrayed in parallel on at least the first magnetic shield and electrode (11). Electrodes on one side for applying a sense current to these ferromagnetic tunnel type magnetoresistive effect element in the direction crossing a tunnel barrier layer are constructed commonly by the first magnetic shield and led out as a common one terminal and thereby the number of terminals can be decreased. Therefore, the number of the terminals in the multichannel magnetic head using magnetoresistive effect can be decreased, the whole of the multichannel magnetic head can be miniaturized, the occurrence of a short-circuit, a poor insulation between the terminals or between the leads can be removed, the occurrence of fluctuations of element characteristics can be removed, the multichannel magnetic head using magnetoresistive effect can become highly reliable and a yield of the multichannel magnetic head using magnetoresistive effect can be improved.
摘要翻译：使用磁阻效应的多通道磁头包括第一磁屏蔽和电极（11），第二磁屏蔽和电极（12），第一和第二磁屏蔽和电极（11），（12）彼此相对，以及排列在第一和第二磁屏蔽和电极（11）和（12）之间的多个磁阻效应型再现磁头元件，其中由铁磁隧道型磁阻效应元件形成的再现磁头元件至少平行排列第一磁屏蔽和电极（11）。在与隧道势垒层交叉的方向上向这些铁磁隧道型磁阻效应元件施加感应电流的一侧的电极由第一磁屏蔽共同构成，并作为公共的一个端子引出，从而可以减少端子的数量。因此，可以减少使用磁阻效应的多通道磁头中的端子数量，可以使整个多通道磁头小型化，发生短路，端子之间或引线之间的绝缘差可以消除元件特性的波动的发生，使用磁阻效应的多通道磁头可以变得高度可靠，并且可以提高使用磁阻效应的多通道磁头的产量。

72. 发明授权

US06404191B2 Read heads in planar monolithic integrated circuit chips 失效
标题翻译：在平面单片集成电路芯片中读头
公开(公告)号：US06404191B2
公开(公告)日：2002-06-11
申请号：US09814637
申请日：2001-03-22
申请人： James M. Daughton , Arthur V. Pohm
发明人： James M. Daughton , Arthur V. Pohm
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3948 , G11B5/3954 , G11B5/3967 , G11B5/488 , G11B5/59683 , G11B2005/3996
摘要： A plurality of magnetic field sensing structures in a monolithic integrated circuit chip structure to provide output signals at outputs thereof of magnetic field changes provided therein from corresponding sources having poled pair structures with a gap space between them with adjacent ones of the magnetic field sensing structures that are interconnected with a circuit formed in the monolithic integrated circuit chip such as an amplifier. The paired pole structures may intersect a surface of the chip perpendicular to the major surfaces thereof or in one of, or a surface parallel to, the major surfaces thereof. A magnetic field generating structure may also be included in the chip.
摘要翻译：单片集成电路芯片结构中的多个磁场感测结构，用于在其输出端提供输出信号，该输出信号由具有极化对结构的相应源提供，其中它们与相邻的磁场感测结构之间具有间隙，与形成在诸如放大器的单片集成电路芯片中的电路互连。成对的极结构可以垂直于芯片的主表面或与其主表面平行的一个或表面相交。磁场产生结构也可以包括在芯片中。

73. 发明授权

US06373648B2 Disk head assembly with multiple read and/or write transducers for improved performance 失效
标题翻译：具有多个读取和/或读取传感器的磁头组件，以提高性能
公开(公告)号：US06373648B2
公开(公告)日：2002-04-16
申请号：US09740073
申请日：2000-12-18
申请人： Dennis M. O'Connor
发明人： Dennis M. O'Connor
IPC分类号： G11B2736
CPC分类号： G11B5/012 , G11B5/3948 , G11B5/4886 , G11B21/083
摘要： A recording disk apparatus is provided. The recording disk apparatus includes a recording disk having at least one recording surface with a plurality of spaced recording tracks. The recording disk also includes a positioning arm with a head assembly. The head assembly has a plurality of read transducers. Each consecutive transducer is positioned relative to one another at a distance substantially smaller than a spacing between two consecutive tracks.
摘要翻译：提供了一种记录盘装置。记录盘装置包括具有至少一个具有多个间隔记录磁道的记录表面的记录盘。记录盘还包括具有头组件的定位臂。头组件具有多个读换能器。每个连续的传感器相对于彼此定位，距离远小于两条连续轨迹之间的距离。

74. 发明申请

US20010009063A1 Spin valve thin-film magnetic device having free magnetic layer in ferrimagnetic state and manufacturing method therefor 失效
标题翻译：具有亚铁磁性状态的自由磁性层的旋转阀薄膜磁性装置及其制造方法
公开(公告)号：US20010009063A1
公开(公告)日：2001-07-26
申请号：US09764003
申请日：2001-01-17
申请人： Alps Electric Co., Ltd.
发明人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Fumihito Koike , Naoya Hasegawa
IPC分类号： G11B005/39
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3948 , G11B5/3967 , G11B2005/3996 , H01F10/3218 , H01F10/3263 , H01F10/3268 , H01F41/302 , Y10T29/49034 , Y10T29/49043
摘要： A spin valve thin-film magnetic device is provided, in which the asymmetry can be reduced. The spin valve thin-film magnetic device comprises a free magnetic layer and a first and a second fixed magnetic layer, which are provided respectively at each side of the free magnetic layer in the thickness direction thereof. In the spin valve thin-film magnetic device, the free magnetic layer is composed of a first and a second ferromagnetic free layer, in which the entire free magnetic layer is in a ferrimagnetic state, the first fixed magnetic layer is composed of a first and a second pinned ferromagnetic layer, in which the entire first fixed magnetic layer is in a ferrimagnetic state, and the second fixed magnetic layer is composed of a third and a fourth pinned ferromagnetic layer, in which the entire second fixed magnetic layer is in a ferrimagnetic state. In addition, magnetization directions of the second and the third pinned ferromagnetic layers, which are closer to the free magnetic layer, are antiparallel to each other.
摘要翻译：提供了一种自旋阀薄膜磁性器件，其中可以减小不对称性。自旋阀薄膜磁性装置包括自由磁性层和第一和第二固定磁性层，它们分别设置在自由磁性层的厚度方向的每一侧。在自旋阀薄膜磁性器件中，自由磁性层由第一和第二铁磁性自由层构成，其中整个自由磁性层处于亚铁磁状态，第一固定磁性层由第一和第二铁磁性层组成，第二固定铁磁层，其中整个第一固定磁性层处于亚铁磁状态，并且第二固定磁性层由第三和第四钉扎铁磁层构成，其中整个第二固定磁性层处于铁磁性州。此外，更靠近自由磁性层的第二和第三固定铁磁层的磁化方向彼此反平行。

75. 发明授权

US06266205B1 Parallel servo with ultra high bandwidth off-track detection 失效
标题翻译：具有超高带宽离线检测的并行伺服
公开(公告)号：US06266205B1
公开(公告)日：2001-07-24
申请号：US09073600
申请日：1998-05-06
申请人： Erhard T. Schreck , Lin Guo
发明人： Erhard T. Schreck , Lin Guo
IPC分类号： G11B5596
CPC分类号： G11B5/00813 , B82Y10/00 , B82Y25/00 , G11B5/012 , G11B5/09 , G11B5/3948 , G11B5/488 , G11B5/4886 , G11B5/4969 , G11B5/4992 , G11B5/5534 , G11B5/59622 , G11B5/59627 , G11B5/59644 , G11B5/59683 , G11B2005/0016 , G11B2005/3996
摘要： A magnetic storage system having one or more rotating disks is disclosed. In a preferred embodiment, each rotating disk has two magnetic surfaces which each contain a number of tracks. Each track has one or more data regions and one or more embedded servo sectors. First and second transducers are respectively suspended over first and second tracks corresponding to first and second magnetic surfaces. The second transducer determines an off-track position with respect to the second track by reading from the data region of the second track. Once the off-track position is determined for the second transducer, that information is used to position the first transducer with respect to the first track and position the second transducer with respect to the second track as the first transducer writes to the first track. Furthermore, the first transducer is positioned at a correction rate that exceeds the rate at which the first transducer encounters embedded servo sectors in the first track. As a result, the first transducer reduces or avoids flying-blind as it writes to the disk.
摘要翻译：公开了一种具有一个或多个旋转盘的磁存储系统。在优选实施例中，每个旋转盘具有两个磁性表面，每个磁性表面包含多个磁道。每个轨道具有一个或多个数据区域和一个或多个嵌入式伺服扇区。第一和第二换能器分别悬挂在对应于第一和第二磁性表面的第一和第二轨道上。第二传感器通过从第二磁道的数据区域读取来确定相对于第二磁道的偏离磁道位置。一旦为第二换能器确定偏离轨迹位置，则该信息用于相对于第一轨道定位第一换能器，并且当第一换能器写入第一轨道时相对于第二轨道定位第二换能器。此外，第一换能器位于超过第一换能器在第一轨道中遇到嵌入式伺服扇区的速率的校正速率。因此，第一个传感器会在写入磁盘时减少或避免飞盲。

76. 发明授权

US06204071B1 Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration 失效
标题翻译：具有反并联交换配置的带状磁阻（SMR）和双条磁阻（DSMR）头的制造方法
公开(公告)号：US06204071B1
公开(公告)日：2001-03-20
申请号：US09408491
申请日：1999-09-30
申请人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
发明人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
IPC分类号： H01L2100
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B2005/3996
摘要： A method for forming a longitudinally magnetically biased dual stripe magnetoresistive (DSMR) sensor element comprises forming a first patterned magnetoresistive (MR) layer. Contact the opposite ends of the patterned magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer, each of the stacks including a first Anti-Ferro-Magnetic (AFM) layer and a first lead layer. Then anneal the device in the presence of a longitudinal external magnetic field. Next, form a second patterned magnetoresistive (MR) layer above the previous structure. Contact the opposite ends of the second patterned magnetoresistive (MR) layer with a second pair of stacks defining a second track width of the second patterned magnetoresistive (MR) layer. Each of the second pair of stacks includes spacer layer composed of a metal, a Ferro-Magnetic (FM) layer, a second Anti-Ferro-Magnetic (AFM) layer and a second lead layer. Then anneal the device in the presence of a second longitudinal external magnetic field.
摘要翻译：用于形成纵向磁偏置双条磁阻（DSMR）传感器元件的方法包括形成第一图案化磁阻（MR）层。用限定第一磁阻（MR）层的轨道宽度的第一对叠层接触图案化磁阻（MR）层的相对端，每个堆叠包括第一抗铁磁（AFM）层和第一铅层。然后在存在纵向外部磁场的情况下退火该器件。接下来，在先前的结构之上形成第二图案化磁阻（MR）层。用限定第二图案化磁阻（MR）层的第二磁道宽度的第二对叠层接触第二图案化磁阻（MR）层的相对端。第二对堆叠中的每一个包括由金属，铁磁（FM）层，第二抗铁磁（AFM）层和第二引线层组成的间隔层。然后在存在第二纵向外部磁场的情况下退火该器件。

77. 发明授权

US06185080B2 Dual tunnel junction sensor with a single antiferromagnetic layer 失效
标题翻译：具有单反铁磁层的双隧道结传感器
公开(公告)号：US06185080B2
公开(公告)日：2001-02-06
申请号：US09280291
申请日：1999-03-29
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B530
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/098 , G11B5/3903 , G11B5/3909 , G11B5/3948
摘要： A dual tunnel junction sensor of a read head has two tunnel junction sensors that share a single antiferromagnetic layer. The dual tunnel junction sensor includes a first ferromagnetic electrically conductive free layer and a first ferromagnetic electrically conductive pinned layer with a barrier layer located therebetween; a second ferromagnetic electrically conductive pinned layer and a second ferromagnetic electrically conductive free layer with a second non-magnetic electrically conductive barrier layer located therebetween; and an antiferromagnetic pinning layer located between the first and second pinned layer. The antiferromagnetic pinning layer being exchange coupled to the first and second pinned layers so as to pin a magnetic moment in each of the pinned layers in a first direction. The first and second free layers each have a magnetic moment oriented in a second direction, preferably perpendicular to the first direction. Since the magnetization of the free and pinned layers are in-phase for both tunnel junctions, the resistance change due to tunneling is additive and therefore provides sensitivity enhancement of the dual tunnel junction head. Also disclosed is the use of an antiparallel (AP) pinned layer in place of the first and second pinned layers.
摘要翻译：读头的双通道结传感器具有共享单个反铁磁层的两个隧道结传感器。双隧道结传感器包括第一铁磁导电自由层和位于其间的阻挡层的第一铁磁导电固定层; 第二铁磁导电固定层和第二铁磁导电自由层，其间位于其间的第二非磁性导电阻挡层; 以及位于第一和第二钉扎层之间的反铁磁钉扎层。交叉耦合到第一和第二被钉扎层的反铁磁钉扎层，以便在第一方向上钉住每个钉扎层中的磁矩。第一自由层和第二自由层各自具有在第二方向上取向的磁矩，优选垂直于第一方向。由于自由和固定层的磁化对于两个隧道结都是同相的，所以由隧道引起的电阻变化是相加的，因此提供双隧道结头的灵敏度增强。还公开了使用反平行（AP）钉扎层代替第一和第二钉扎层。

78. 发明授权

US06181533B2 Simultaneous fixation of the magnetization direction in a dual GMR sensor's pinned layers 失效
标题翻译：在双GMR传感器的钉扎层中同时固定磁化方向
公开(公告)号：US06181533B2
公开(公告)日：2001-01-30
申请号：US09253806
申请日：1999-02-19
申请人： Taras G. Pokhil
发明人： Taras G. Pokhil
IPC分类号： G11B539
CPC分类号： B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B5/3948 , G11B5/3954 , G11B2005/3996 , H01F10/3263 , H01F10/3268 , H01F41/304
摘要： The present invention provides a method for forming a dual giant magnetoresistive sensor. First and second spin valves are first formed and arranged such that a dielectric layer is positioned between the first and the second spin valves. The first spin valve has a plurality of layers including a first antiferromagnetic layer and a first pinned layer. The second spin valve has a plurality of layers including a second antiferromagnetic layer and a second pinned layer. First and second currents are supplied respectively to first and second spin valves. The first current generates a first magnetic field on the first pinned layer that orients a magnetization of the first pinned layer in a first desired direction. The second current generates a second magnetic field on the second pinned layer that orients a magnetization of the second antiferromagnetic layer in a second desired direction. While continuing to supply the first and the second currents, the dual giant magnetoresistive sensor is cooled from a temperature greater than N{acute over (e)}el temperatures of both first and second antiferromagnetic layers to a temperature below the N{acute over (e)}el temperature of both first and second antiferromagnetic layers.
摘要翻译：本发明提供一种形成双重巨磁阻传感器的方法。首先形成和布置第一和第二自旋阀，使得电介质层位于第一和第二自旋阀之间。第一自旋阀具有包括第一反铁磁层和第一固定层的多个层。第二自旋阀具有包括第二反铁磁层和第二钉扎层的多个层。第一和第二电流被分别提供给第一和第二自旋阀。第一电流在第一被钉扎层上产生第一磁场，其将第一被钉扎层的磁化定向在第一所需方向上。第二电流在第二被钉扎层上产生第二磁场，其在第二期望方向上定向第二反铁磁性层的磁化。在继续提供第一和第二电流的同时，双重巨磁阻传感器从大于第一和第二反铁磁层的Néel温度的温度冷却到低于第一和第二反铁磁性层的Néel温度的温度。

79. 发明授权

US6118638A CPP magnetoresistive device and method for making same 失效
标题翻译： CPP磁阻器件及其制造方法
公开(公告)号：US6118638A
公开(公告)日：2000-09-12
申请号：US184120
申请日：1998-11-02
申请人： Kenneth E. Knapp , Ronald A. Barr
发明人： Kenneth E. Knapp , Ronald A. Barr
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3948 , G11B5/3967 , G11B2005/3996 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/4905 , Y10T29/49052
摘要： A magnetoresistive device includes a metal layer, formed over a substrate, in which a groove is formed. A magnetoresistive element is formed in the groove, forming two magnetoresistive element portions that are separated by a conductive element. A sense current applied to the metal layer flows through the two magnetoresistive element portions with a predominant current-perpendicular-to-plane component. A method includes techniques that are less complex and less expensive than submicron photolithography to form the above described magnetoresistive device with submicron geometries. A system includes a read/write head that incorporates a magnetoresistive element formed in a groove of a metal layer.
摘要翻译：磁阻器件包括形成在其上形成有沟槽的衬底上的金属层。在沟槽中形成磁阻元件，形成由导电元件分开的两个磁阻元件部分。施加到金属层的感测电流以主要的电流 - 垂直于平面的分量流过两个磁阻元件部分。一种方法包括比亚微米光刻更不复杂和更便宜的技术，以形成具有亚微米几何形状的上述磁阻器件。系统包括读/写头，其包含形成在金属层的凹槽中的磁阻元件。

80. 发明授权

US6038108A Magnetic tape head assembly having segmented heads 失效
标题翻译：具有分段磁头的磁带头组件
公开(公告)号：US6038108A
公开(公告)日：2000-03-14
申请号：US975645
申请日：1997-11-21
申请人： Richard H. Dee , James C. Cates
发明人： Richard H. Dee , James C. Cates
IPC分类号： G11B5/29 , G11B5/265 , G11B5/31 , G11B5/39 , G11B5/48 , G11B5/55 , G11B5/584
CPC分类号： G11B5/3967 , G11B5/3106 , G11B5/4893 , G11B5/584 , G11B5/3948 , G11B5/3954 , G11B5/5504
摘要： A magnetic tape head assembly is disclosed for use with a magnetic tape storage medium. The assembly includes an interior tape head module having a magnetic gap with 16 or more tape head elements, and a first exterior tape head module adjacent one side of the interior module, the first exterior module having a magnetic gap with 16 or more tape head elements. The assembly also includes a second exterior tape head module adjacent the other side of the interior module, the second exterior module having a magnetic gap with 16 or more recording elements. The distances between consecutive magnetic gaps of the interior and exterior modules are each approximately 60 microns, and the interior and exterior modules together define a semi-circular tape interface contour. In the preferred embodiment, the interior module is a write head with 16 write elements, and the exterior modules are each read heads with 16 data read elements and 6 servo read elements.
摘要翻译：公开了一种用于磁带存储介质的磁带头组件。该组件包括具有与16个或更多个带头元件的磁隙的内部带头模块，以及与该内部模块的一侧相邻的第一外部带头模块，该第一外部模块具有与16个或更多个磁头元件。组件还包括与内部模块的另一侧相邻的第二外部带头模块，第二外部模块具有与16个或更多个记录元件的磁隙。内部和外部模块的连续磁隙之间的距离大约为60微米，内部和外部模块一起限定半圆形磁带接口轮廓。在优选实施例中，内部模块是具有16个写入元件的写入头，并且外部模块每个读取头具有16个数据读取元件和6个伺服读取元件。

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