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71. 发明授权

US06855202B2 Shaped nanocrystal particles and methods for making the same 有权
标题翻译：成型纳米晶粒及其制造方法
公开(公告)号：US06855202B2
公开(公告)日：2005-02-15
申请号：US10301510
申请日：2002-11-20
申请人： A. Paul Alivisatos , Erik C. Scher , Liberato Manna
发明人： A. Paul Alivisatos , Erik C. Scher , Liberato Manna
IPC分类号： B82B1/00 , B82B3/00 , C01B19/04 , C30B7/00 , C30B29/48 , C30B29/60 , C30B33/00 , H01L31/036 , H01L31/04 , C30B7/14
CPC分类号： H01L29/2203 , B82Y30/00 , C30B7/00 , C30B29/48 , C30B29/60 , C30B29/605 , C30B33/00 , H01L31/036 , H01L31/04 , Y10S977/773
摘要： Shaped nanocrystal particles and methods for making shaped nanocrystal particles are disclosed. One embodiment includes a method for forming a branched, nanocrystal particle. It includes (a) forming a core having a first crystal structure in a solution, (b) forming a first arm extending from the core having a second crystal structure in the solution, and (c) forming a second arm extending from the core having the second crystal structure in the solution.
摘要翻译：公开了形成纳米晶体颗粒和制造成形纳米晶体颗粒的方法。一个实施方案包括形成支化纳米晶体颗粒的方法。其包括（a）在溶液中形成具有第一晶体结构的芯，（b）形成从溶液中具有第二晶体结构的芯延伸的第一臂，和（c）形成从芯延伸的第二臂，溶液中的第二个晶体结构。

72. 发明申请

US20040250745A1 Polyethylene glycol-modified semiconductor nanoparticles, method for producing the same, and material for biological diagnosis 有权
标题翻译：聚乙二醇改性半导体纳米粒子，其制造方法以及生物诊断用材料
公开(公告)号：US20040250745A1
公开(公告)日：2004-12-16
申请号：US10810305
申请日：2004-03-26
申请人： NOF Corporation
发明人： Atsuhiko Ogura , Eui-chul Kang , Kazunori Kataoka , Yukio Nagasaki
IPC分类号： C30B033/06 , C30B001/00
CPC分类号： C30B7/14 , C30B7/00 , C30B29/48 , C30B29/605 , Y10T428/2991 , Y10T428/2998
摘要： This invention provides PEG-modified semiconductor nanoparticles of which fluorescence intensity is effectively inhibited from lowering, which are capable of forming a stable dispersion in water, and which are capable of bonding easily with biomolecules having specific recognition, as well as methods for conveniently preparing such nanoparticles, and a material for biological diagnosis. The water-soluble PEG-modified semiconductor nanoparticles of the present invention includes a structure having PEG of a number average molecular weight of 300 to 20000 having a thiol group at one end, bonded via cadmium to II-VI semiconductor nanocrystals of a core-shell structure having a ZnX (wherein X stands for O, S, Se, or Te) shell.
摘要翻译：本发明提供了PEG修饰的半导体纳米粒子，其荧光强度被有效地抑制，能够在水中形成稳定的分散体，并且能够容易地与具有特定识别性的生物分子结合，以及方便地制备纳米颗粒和用于生物诊断的材料。本发明的水溶性PEG改性的半导体纳米粒子包括数均分子量为300〜20000的具有一端具有硫醇基的PEG的结构，其通过镉键合到芯壳的II-VI半导体纳米晶体具有ZnX（其中X代表O，S，Se或Te）壳的结构。

73. 发明申请

US20040232427A1 P-type group II-VI semiconductor compounds 有权
标题翻译： P型II-VI族半导体化合物
公开(公告)号：US20040232427A1
公开(公告)日：2004-11-25
申请号：US10849345
申请日：2004-05-19
发明人： Robert H. Burgener II , Roger L. Felix , Gary M. Renlund
IPC分类号： H01L029/22
CPC分类号： H01L33/285 , C30B23/02 , C30B25/02 , C30B29/48 , H01L21/0237 , H01L21/02554 , H01L21/02557 , H01L21/02579 , H01L21/02628 , H01L21/02631 , H01L29/22 , H01L29/225 , H01L29/227
摘要： A persistent p-type group II-VI semiconductor material is disclosed. The group II-VI semiconductor includes atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is sufficient to render the group II-VI semiconductor material in a single crystal form. The semiconductor resistivity is less than about 0.5 ohmnullcm, and the carrier mobility is greater than about 0.1 cm2/Vnulls. Group II elements include zinc, cadmium, the alkaline earth metals such as beryllium, magnesium calcium, strontium, and barium, and mixtures thereof. Group VI elements include oxygen, sulfur, selenium, tellurium, and mixtures thereof. P-type dopants include, but are not limited to, nitrogen, phosphorus, arsenic, antimony, bismuth, copper, chalcogenides of the foregoing, and mixtures thereof.
摘要翻译：公开了一种持续性p型II-VI族半导体材料。 II-VI族半导体包括II族元素的原子，VI族元素的原子和一种或多种p型掺杂剂。 p型掺杂剂浓度足以使II-VI族半导体材料成为单晶形式。半导体电阻率小于约0.5欧姆·厘米，载流子迁移率大于约0.1厘米2 / V·s。 II族元素包括锌，镉，碱土金属如铍，镁钙，锶和钡，及其混合物。 VI族元素包括氧，硫，硒，碲及其混合物。 P型掺杂剂包括但不限于上述的氮，磷，砷，锑，铋，铜，硫族化物，及其混合物。

74. 发明申请

US20040035356A1 Method and apparatus for preparation of binary and higher order compounds and devices fabricated using same 失效
标题翻译：制备二元和更高级化合物的方法和装置以及使用其制造的器件
公开(公告)号：US20040035356A1
公开(公告)日：2004-02-26
申请号：US10296909
申请日：2003-05-20
发明人： Andrea Zappettini , Lucio Zanotti , Mingzheng Zha , Francesco Bissoli
IPC分类号： C30B023/00 , C30B025/00 , C30B028/12 , C30B028/14
CPC分类号： C30B11/00 , C30B23/00 , C30B23/002 , C30B29/48
摘要： A heat treatment chamber (30) is provided comprising a treatment region containing a charge (5) of compound material comprising a plurality of n atomic species, each atomic species being associated with at least one gas species. The chamber (30) is placed in a furnace (7). The chamber has a gas permeable barrier, constituted by a plug (4) and wadding (6), which partially encloses the treatment region. The barrier serves as an effusive hole to inhibit, but not prevent, gas vapour release, thereby to elevate the gas vapour pressure in the treatment region. Application of inert gas through a valve (8) is also used to increase background pressure in the treatment region during heat treatment. The elevated gas pressures present in the treatment region during treatment are measurable in an absorption cell (3) adjacent to the treatment region. It is thus possible to monitor the gas pressures during heat treatment and thereby stop the heat treatment once a desired charge stoichiometry is achieved. This improves over prior art heat treatment which is carried out in vacuum and thus precludes optical absorption measurement of the gas pressures during heat treatment.
摘要翻译：提供了一种热处理室（30），其包括含有包含多个n原子物质的复合材料的电荷（5）的处理区域，每个原子物质与至少一种气体物质相关联。室（30）放置在炉（7）中。腔室具有气体渗透屏障，由塞子（4）和填塞物（6）构成，其部分地包围处理区域。阻挡层用作抑制气体蒸气释放而不是防止气体蒸发的渗出孔，从而提高处理区域中的气体蒸汽压力。惰性气体通过阀门（8）的应用也用于在热处理过程中提高处理区域的背景压力。处理期间处理区域中存在的升高的气体压力可在与处理区域相邻的吸收池（3）中测量。因此，可以在热处理期间监测气体压力，从而一旦达到所需的电荷化学计量即可停止热处理。这比在真空中进行的现有技术的热处理改进，因此排除热处理期间气体压力的光吸收测量。

75. 发明申请

US20030209105A1 Preparation of nanocrystallites 有权
公开(公告)号：US20030209105A1
公开(公告)日：2003-11-13
申请号：US10455629
申请日：2003-06-06
申请人： Massachusetts Institute of Technology, a Massachusetts corporation
发明人： Moungi Bawendi , Nathan E. Stott
IPC分类号： C09K003/00
CPC分类号： C01B17/20 , B82Y30/00 , C01B19/007 , C01P2004/64 , C30B7/00 , C30B7/14 , C30B29/40 , C30B29/48 , C30B29/605 , H01L33/005 , H01L33/0083 , Y10S516/922 , Y10S977/813 , Y10S977/815 , Y10S977/818 , Y10S977/819 , Y10S977/82 , Y10S977/822 , Y10S977/823 , Y10S977/824 , Y10S977/916 , Y10T428/2991
摘要： A method of manufacturing a nanocrystallite from a M-containing salt forms a nanocrystallite. The nanocrystallite can be a member of a population of nanocrystallites having a narrow size distribution and can include one or more semiconductor materials. Semiconducting nanocrystallites can photoluminesce and can have high emission quantum efficiencies.

76. 发明申请

US20030172870A1 Apparatus for growing monocrystalline group II-VI and III-V compounds 审中-公开
标题翻译：用于生长单晶II-VI族和III-V族化合物的装置
公开(公告)号：US20030172870A1
公开(公告)日：2003-09-18
申请号：US10097844
申请日：2002-03-14
申请人： AXT, Inc.
发明人： Xiao Gordon Liu , Weiguo Liu
IPC分类号： C30B035/00 , C30B001/00
CPC分类号： C30B11/003 , C30B29/40 , C30B29/48 , Y10T117/10
摘要： An apparatus for producing large diameter monocrystalline Group III-V, II-VI compounds that have reduced crystal defect density, improved crystal growth yield, and improved bulk material characteristics. The apparatus comprises a crucible or boat, an ampoule that contains the crucible or boat, a heating unit disposed about the ampoule, and a liner disposed between the heating unit and the ampoule. The liner is preferably composed of a quartz material. When the liner and the ampoule are made of the same material, such as quartz, the thermal expansion coefficients of the liner and ampoule are the same, which significantly increases the lifetime of the liner and the single-crystal yield.
摘要翻译：一种用于生产具有降低的晶体缺陷密度，改善的晶体生长产率和改善的散装材料特性的大直径单晶III-V族，II-VI族化合物的装置。该装置包括坩埚或舟皿，容纳坩埚或舟皿的安瓿，围绕安瓿设置的加热单元以及设置在加热单元和安瓿之间的衬垫。衬垫优选由石英材料构成。当衬垫和安瓿由相同的材料（如石英）制成时，衬里和安瓿的热膨胀系数相同，这显着增加了衬套的寿命和单晶产量。

77. 发明申请

US20030145779A1 Shaped nanocrystal particles and methods for making the same 有权
标题翻译：成型纳米晶粒及其制造方法
公开(公告)号：US20030145779A1
公开(公告)日：2003-08-07
申请号：US10301510
申请日：2002-11-20
申请人： Regents of the University of California
发明人： A. Paul Alivisatos , Erik C. Scher , Liberato Manna
IPC分类号： C30B001/00
CPC分类号： H01L29/2203 , B82Y30/00 , C30B7/00 , C30B29/48 , C30B29/60 , C30B29/605 , C30B33/00 , H01L31/036 , H01L31/04 , Y10S977/773
摘要： Shaped nanocrystal particles and methods for making shaped nanocrystal particles are disclosed. One embodiment includes a method for forming a branched, nanocrystal particle. It includes (a) forming a core having a first crystal structure in a solution, (b) forming a first arm extending from the core having a second crystal structure in the solution, and (c) forming a second arm extending from the core having the second crystal structure in the solution.
摘要翻译：公开了形成纳米晶体颗粒和制造成形纳米晶体颗粒的方法。一个实施方案包括形成支化纳米晶体颗粒的方法。其包括（a）在溶液中形成具有第一晶体结构的芯，（b）形成从溶液中具有第二晶体结构的芯延伸的第一臂，和（c）形成从芯延伸的第二臂，溶液中的第二个晶体结构。

78. 发明授权

US06576291B2 Preparation of nanocrystallites 有权
公开(公告)号：US06576291B2
公开(公告)日：2003-06-10
申请号：US09732013
申请日：2000-12-08
申请人： Moungi Bawendi , Nathan E. Stott
发明人： Moungi Bawendi , Nathan E. Stott
IPC分类号： B22F102
CPC分类号： C01B17/20 , B82Y30/00 , C01B19/007 , C01P2004/64 , C30B7/00 , C30B7/14 , C30B29/40 , C30B29/48 , C30B29/605 , H01L33/005 , H01L33/0083 , Y10S516/922 , Y10S977/813 , Y10S977/815 , Y10S977/818 , Y10S977/819 , Y10S977/82 , Y10S977/822 , Y10S977/823 , Y10S977/824 , Y10S977/916 , Y10T428/2991
摘要： A method of manufacturing a nanocrystallite from a M-containing salt forms a nanocrystallite. The nanocrystallite can be a member of a population of nanocrystallites having a narrow size distribution and can include one or more semiconductor materials. Semiconducting nanocrystallites can photoluminesce and can have high emission quantum efficiencies.

79. 发明申请

US20030073259A1 Process of and apparatus for heat-treating II-VI compound semiconductors and semiconductor heat-treated by the process 失效
标题翻译：用于热处理II-VI化合物半导体的工艺和设备，以及通过该工艺热处理的半导体
公开(公告)号：US20030073259A1
公开(公告)日：2003-04-17
申请号：US10243198
申请日：2002-09-13
发明人： Yasuo Namikawa
IPC分类号： H01L021/00
CPC分类号： H01L21/385 , C30B29/48 , C30B33/00 , H01L33/0095 , H01L33/28
摘要： A process of heat-treating II-VI compound semiconductors reduces the electrical resistivity without the decrease in crystallinity resulting from the increase in dislocation density. The process comprises the following steps:(a) placing at least one II-VI compound semiconductor in contact with aluminum in a heat-treating chamber having the inside surface formed by at least one material selected from the group consisting of pyrolytic born nitride, hexagonal-system boron nitride, sapphire, alumina, aluminum nitride, and polycrystalline diamond; and (b) heat-treating the II-VI compound semiconductor or semiconductors in a gaseous atmosphere containing the group II element constituting part of the II-VI compound semiconductor or semiconductors. A II-VI compound semiconductor is heat-treated by the foregoing process. An apparatus for heat-treating II-VI compound semiconductors comprises components for performing the foregoing process.
摘要翻译：一种热处理II-VI化合物半导体的方法降低了电阻率，而不会由于位错密度的增加而导致结晶度的降低。该方法包括以下步骤：（a）将至少一种与铝接触的II-VI化合物半导体放置在热处理室中，所述热处理室具有由至少一种选自热解出的氮化物，六方晶系的材料形成的内表面系统氮化硼，蓝宝石，氧化铝，氮化铝和多晶金刚石; 和（b）在构成II-VI族化合物半导体或半导体的一部分的II族元素的气氛气氛中热处理II-VI族化合物半导体或半导体。通过上述方法对II-VI化合物半导体进行热处理。用于热处理II-VI化合物半导体的装置包括用于执行上述方法的组分。

80. 发明申请

US20020139296A1 Method for growing single crystal of compound semiconductor and substrate cut out therefrom 失效
标题翻译：用于生长化合物半导体的单晶的方法和从其切出的基底
公开(公告)号：US20020139296A1
公开(公告)日：2002-10-03
申请号：US10112700
申请日：2002-04-02
申请人： HITACHI CABLE LIMITED
发明人： Masaya Ohnishi , Kenya Itani , Seiji Mizuniwa , Hiroshi Sasabe , Inao Fujisaki
IPC分类号： C30B009/00 , C30B011/00 , C30B017/00 , C30B021/02 , C30B028/06
CPC分类号： C30B29/40 , C30B11/14 , C30B29/42 , C30B29/48
摘要： A method for growing a compound semiconductor single crystal comprising cooling a starting material melt of a compound semiconductor with an upward increasing temperature gradient in a crystal-growing container having a seed crystal placed at a lower end, thereby growing a single crystal upward from the seed crystal, the crystal orientation of the seed crystal in a crystal growth axis direction being an offset orientation of nullnull, wherein the offset angle null is 2nullnullnullnull55null.
摘要翻译：一种用于生长化合物半导体单晶的方法，包括在具有位于下端的晶种的晶体生长容器中以向上升高的温度梯度冷却化合物半导体的原料熔体，从而从晶种向上生长单晶晶体，晶体生长轴方向上的晶种的晶体取向为<100 +θ的偏移取向，其中偏移角θ为2°θ= 55°。

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