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    • 78. 发明申请
    • COMPOSITIONS AND METHODS FOR SELECTIVE POLISHING OF SILICON NITRIDE MATERIALS
    • 氮化硅材料的选择性抛光的组合物和方法
    • US20140017892A1
    • 2014-01-16
    • US13546552
    • 2012-07-11
    • William WARD
    • William WARD
    • H01L21/306C09K13/00
    • H01L21/31053C09G1/02C09K3/1409C09K3/1463H01L21/31116H01L21/32139
    • The present invention provides an acidic aqueous polishing composition suitable for polishing a silicon nitride-containing substrate in a chemical-mechanical polishing (CMP) process. The composition, at point of use, preferably comprises about 0.01 to about 2 percent by weight of at least one particulate ceria abrasive, about 10 to about 1000 ppm of at least one non-polymeric unsaturated nitrogen heterocycle compound, 0 to about 1000 ppm of at least one cationic polymer, optionally, 0 to about 2000 ppm of at least one polyoxyalkylene polymer, and an aqueous carrier therefor. The cationic polymer preferably is selected from a poly(vinylpyridine) polymer, a quaternary ammonium-substituted acrylate polymer, a quaternary ammonium-substituted methacrylate polymer, or a combination thereof. Methods of polishing substrates and of selectively removing silicon nitride from a substrate in preference to removal of polysilicon using the compositions are also provided.
    • 本发明提供了一种适用于在化学机械抛光(CMP)工艺中抛光含氮化硅的衬底的酸性水性抛光组合物。 组合物在使用时优选包含约0.01至约2重量%的至少一种颗粒二氧化铈磨料,约10至约1000ppm的至少一种非聚合不饱和氮杂环化合物,0至约1000ppm的 至少一种阳离子聚合物,任选的0至约2000ppm的至少一种聚氧化烯聚合物及其水性载体。 阳离子聚合物优选选自聚(乙烯基吡啶)聚合物,季铵取代的丙烯酸酯聚合物,季铵取代的甲基丙烯酸酯聚合物或其组合。 还提供了抛光衬底和从衬底中选择性去除氮化硅的方法,优选使用组合物去除多晶硅。