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71. 发明授权

US07732241B2 Microstructure and manufacturing method thereof and microelectromechanical system 失效
标题翻译：微结构及其制造方法及微机电系统
公开(公告)号：US07732241B2
公开(公告)日：2010-06-08
申请号：US11562711
申请日：2006-11-22
申请人： Mayumi Yamaguchi , Konami Izumi , Kojiro Shiraishi
发明人： Mayumi Yamaguchi , Konami Izumi , Kojiro Shiraishi
IPC分类号： H01L21/20
CPC分类号： B81C1/00682 , B81B2203/0118
摘要： An object is to provide a microstructure in which shear stress of a structural layer is increased, a manufacturing method thereof, and a microelectromechanical system. A sacrificial layer is formed over a substrate. A metal film is formed over the sacrificial layer. The metal film is irradiated with a laser beam. Needle-like crystals of the metal film are reduced or eliminated. The metal film is etched and processed into a predetermined shape to form a metal layer. Then, the sacrificial layer is removed. Accordingly, a microelectromechanical system which is excellent in reliability and in which a resistance property to breakage of a movable portion of the microstructure is improved can be provided.
摘要翻译：本发明的目的是提供一种结构层的剪切应力增加的微结构，其制造方法和微机电系统。在衬底上形成牺牲层。在牺牲层上形成金属膜。金属膜用激光束照射。金属膜的针状晶体减少或消除。金属膜被蚀刻并加工成预定的形状以形成金属层。然后，除去牺牲层。因此，可以提供可靠性优异且微结构的可动部的断裂的电阻特性提高的微机电系统。

72. 发明申请

US20090225384A1 VIBRATION ELEMENTS 有权
标题翻译：振动元件
公开(公告)号：US20090225384A1
公开(公告)日：2009-09-10
申请号：US12400911
申请日：2009-03-10
申请人： Mochizuki Eiji , Tetsurou Saitoh , Yukito Sato
发明人： Mochizuki Eiji , Tetsurou Saitoh , Yukito Sato
IPC分类号： G02B26/08 , H03H9/15
CPC分类号： G02B26/0841 , B81B2201/047 , B81C1/00682
摘要： A vibration unit including a frame, a vibration element including a substrate configured to vibrate, and a beam configured to connect the vibration element to the frame. The vibration unit is produced by applying an etching process to at least two surfaces of a substrate. A meeting position of the two surfaces of the substrate located where a first etching process, which takes place on a first surface of the substrate and a second etching process, which takes place on a second surface of the substrate meet, and is located at a position other than a center position in a width direction of the beam.
摘要翻译：包括框架的振动单元，包括被配置为振动的基板的振动元件以及被配置为将振动元件连接到框架的梁。振动单元通过对基板的至少两个表面施加蚀刻工艺来制造。位于基板的第一表面上发生的第一蚀刻工艺和在基板的第二表面上发生的第二蚀刻工艺的基板的两个表面的会合位置相交并位于除了梁的宽度方向上的中心位置以外的位置。

73. 发明申请

US20090170231A1 METHOD OF PRODUCING MECHANICAL COMPONENTS OF MEMS OR NEMS STRUCTURES MADE OF MONOCRYSTALLINE SILICON 有权
标题翻译：生产MEMS或NEMS的机械组件的方法单晶硅的结构
公开(公告)号：US20090170231A1
公开(公告)日：2009-07-02
申请号：US12336930
申请日：2008-12-17
申请人： Philippe Robert , Valerie Nguyen
发明人： Philippe Robert , Valerie Nguyen
IPC分类号： H01L21/00 , H01L21/71 , H01L21/31 , B82B1/00
CPC分类号： B81C1/00484 , B81C1/00682 , B81C2201/053
摘要： The invention concerns a method of producing at least one mechanical component of a MEMS or NEMS structure from a monocrystalline silicon substrate, comprising the steps of: forming anchoring zones in one face of the substrate to delimit the mechanical component, forming, on the face of the substrate, a lower protective layer made of material other than silicon and obtained by epitaxy from the face of the substrate, forming, on the lower protective layer, a silicon layer obtained by epitaxy from the lower protective layer, forming an upper protective layer on the silicon layer, etching the upper protective layer, the silicon layer and the lower protective layer, according to a pattern defining the mechanical component, until the substrate is reached and to provide access routes to the substrate, forming a protective layer on the walls formed by the etching of the pattern of the mechanical component in the epitaxied silicon layer, releasing the mechanical component by isotropic etching of the substrate from the access routes to the substrate, wherein said isotropic etching does not attack the lower and upper protective layers and the protective layer of the walls.
摘要翻译：本发明涉及一种从单晶硅衬底生产MEMS或NEMS结构的至少一个机械部件的方法，包括以下步骤：在衬底的一个面中形成锚定区，以界定机械部件，在基板，由硅以外的材料制成的下保护层，通过从基板的表面外延得到的下保护层，在下保护层上形成从下保护层外延生成的硅层，在上保护层上形成上保护层硅层，根据限定机械部件的图案蚀刻上保护层，硅层和下保护层，直到到达基板并提供到基板的通路，在形成的壁上形成保护层通过蚀刻表面硅层中的机械部件的图案，通过各向同性蚀刻来释放机械部件从所述通路到所述基板的所述基板，其中所述各向同性蚀刻不会侵蚀所述下壁和上保护层以及所述壁的保护层。

74. 发明申请

US20060109534A1 Ultra-flat reflective MEMS optical elements 审中-公开
标题翻译：超平面反光MEMS光学元件
公开(公告)号：US20060109534A1
公开(公告)日：2006-05-25
申请号：US11264361
申请日：2005-11-01
申请人： Thomas Grebinski
发明人： Thomas Grebinski
IPC分类号： G02B5/32
CPC分类号： B81C1/00682 , B81B2201/042 , B81B2203/0109 , B81C2201/0104 , B81C2201/018 , G02B26/0833 , G02B26/0841
摘要： The present invention relates to producing ultra flat micro surfaces suitable, for instance, for micro-mirrors. In particular, it relates to low pressure chemical mechanical planarization (CMP) of a partially cured sacrificial layer.
摘要翻译：本发明涉及生产适合于例如微镜的超平面微表面。特别地，其涉及部分固化的牺牲层的低压化学机械平面化（CMP）。

75. 发明申请

US20040166664A1 Thin film-structure and a method for producing the same 失效
标题翻译：薄膜结构及其制造方法
公开(公告)号：US20040166664A1
公开(公告)日：2004-08-26
申请号：US10788337
申请日：2004-03-01
申请人： Tokyo Institute of Technology
发明人： Akira Shimokohbe , Seiichi Hata
IPC分类号： H01L021/00 , H01L021/84 , H01L021/469
CPC分类号： B81C1/00682 , B81B2203/0109 , B81B2203/0118 , B81C2201/0167
摘要： A thin film made of an amorphous material having a supercooled liquid phase region is formed on a substrate. Then, the thin film is heated to a temperature within the supercooled liquid phase region and is deformed by its weight, mechanical external force, electrostatic external force or the like, thereby to form a thin film-structure. Thereafter, the thin film-structure is cooled down to room temperature, which results in the prevention of the thin film's deformation.
摘要翻译：在基板上形成由具有过冷液相区域的非晶材料制成的薄膜。然后，将薄膜加热至过冷液相区域内的温度，并通过其重量，机械外力，静电外力等变形，从而形成薄膜结构。此后，将薄膜结构冷却至室温，从而防止薄膜的变形。

76. 发明申请

US20020072203A1 THIN FILM-STRUCTURE AND A METHOD FOR PRODUCING THE SAME 失效
标题翻译：薄膜结构及其制造方法
公开(公告)号：US20020072203A1
公开(公告)日：2002-06-13
申请号：US09556795
申请日：2000-04-25
发明人： AKIRA SHIMOKOHBE , SEIICHI HATA
IPC分类号： H01L021/36
CPC分类号： B81C1/00682 , B81B2203/0109 , B81B2203/0118 , B81C2201/0167
摘要： A thin film made of an amorphous material having an supercooled liquid phase region is formed on a substrate. Then, the thin film is heated to a temperature within the supercooled liquid phase region and is deformed by its weight, mechanical external force, electrostatic external force or the like, thereby to form a thin film-structure. Thereafter, the thin film-structure is cooled down to room temperature, which results in the prevention of the thin film's deformation.
摘要翻译：在基板上形成由具有过冷液相区域的无定形材料制成的薄膜。然后，将薄膜加热至过冷液相区域内的温度，并通过其重量，机械外力，静电外力等变形，从而形成薄膜结构。此后，将薄膜结构冷却至室温，从而防止薄膜的变形。

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