专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20140361356A1 ACTIVE PIXEL SENSOR WITH NANOWIRE STRUCTURED PHOTODETECTORS 有权
标题翻译：主动像素传感器与纳米结构的光电转换器
公开(公告)号：US20140361356A1
公开(公告)日：2014-12-11
申请号：US14293164
申请日：2014-06-02
申请人： ZENA TECHNOLOGIES, INC.
发明人： Young-June Yu , Munib Wober
IPC分类号： H01L27/146 , H01L31/112 , H01L31/0232 , H01L31/0352
CPC分类号： H01L27/14612 , H01L27/1461 , H01L27/14625 , H01L27/14643 , H01L27/14645 , H01L31/0232 , H01L31/02327 , H01L31/0352 , H01L31/035227 , H01L31/03529 , H01L31/101 , H01L31/102 , H01L31/1126 , Y02E10/50
摘要： An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device.
摘要翻译：一种形成为组合CMOS制造工艺和纳米线制造工艺的有源像素阵列的成像器件。阵列中的像素可以包括围绕纳米线的单个或多个摄像机。摄影门控制纳米线中的电位分布，允许在纳米线中积累光生电荷并传输电荷用于信号读出。每个像素可以包括读出电路，其可以包括复位晶体管，电荷转移开关晶体管，源极跟随放大器和像素选择晶体管。纳米线通常构造为在体半导体衬底上的垂直杆，以接收入射到纳米线尖端的光能。纳米线可以被配置为用作被配置为将光引导到衬底的光电检测器或波导。可以使用成像装置检测不同波长的光。

72. 发明授权

US08890271B2 Silicon nitride light pipes for image sensors 有权
标题翻译：用于图像传感器的氮化硅光管
公开(公告)号：US08890271B2
公开(公告)日：2014-11-18
申请号：US12966535
申请日：2010-12-13
申请人： Turgut Tut , Peter Duane , Young-June Yu , Winnie N. Ye , Munib Wober , Kenneth B. Crozier
发明人： Turgut Tut , Peter Duane , Young-June Yu , Winnie N. Ye , Munib Wober , Kenneth B. Crozier
IPC分类号： H01L27/14 , H01L31/0216 , H01L21/311 , H01L31/105
CPC分类号： H01L21/31116 , H01L31/02164 , H01L31/02165 , H01L31/105
摘要： Various embodiments for etching of silicon nitride (SixNy) lightpipes, waveguides and pillars, fabricating photodiode elements, and integration of the silicon nitride elements with photodiode elements are described. The results show that the quantum efficiency of the photodetectors (PDs) can be increased using vertical silicon nitride vertical waveguides.
摘要翻译：描述了用于蚀刻氮化硅（SixNy）光管，波导和柱，制造光电二极管元件以及氮化硅元件与光电二极管元件的集成的各种实施例。结果表明，使用垂直氮化硅垂直波导可以提高光电探测器（PD）的量子效率。

73. 发明授权

US08866065B2 Nanowire arrays comprising fluorescent nanowires 有权
标题翻译：包含荧光纳米线的纳米线阵列
公开(公告)号：US08866065B2
公开(公告)日：2014-10-21
申请号：US12966573
申请日：2010-12-13
申请人： Munib Wober
发明人： Munib Wober
IPC分类号： G01J1/04 , G01J1/42 , G01J5/08 , B82Y20/00 , C01B31/02 , C01B3/00 , H01L29/06
CPC分类号： G01J1/04 , B82Y20/00 , C01B3/00 , C01B3/0021 , C01B32/158 , C01B2202/06 , G01J1/42 , G01J5/08 , H01L29/0669 , Y10S977/95
摘要： Described herein is a nanowire array, comprising a substrate, a plurality of fluorescent nanowires extending essentially perpendicularly from the substrate and a reflective layer disposed on the substrate in areas between the fluorescent nanowires; wherein the fluorescent nanowires are operable to fluoresce at a wavelength of a collective mode of the nanowire array.
摘要翻译：本文描述的是纳米线阵列，其包括衬底，从衬底基本上垂直延伸的多个荧光纳米线和在荧光纳米线之间的区域中设置在衬底上的反射层; 其中所述荧光纳米线可操作以在所述纳米线阵列的集体模式的波长处发荧光。

74. 发明授权

US08835905B2 Solar blind ultra violet (UV) detector and fabrication methods of the same 有权
标题翻译：太阳能防紫外线（UV）探测器及其制作方法相同
公开(公告)号：US08835905B2
公开(公告)日：2014-09-16
申请号：US13048635
申请日：2011-03-15
申请人： Munib Wober , Young-June Yu
发明人： Munib Wober , Young-June Yu
IPC分类号： H01L29/06
CPC分类号： H01L27/14643 , G01J1/429 , G01J4/04 , H01L27/1443 , H01L27/14605 , H01L27/14629 , H01L27/14683 , H01L31/022408 , H01L31/028 , H01L31/035227 , H01L31/035281 , H01L31/105 , H01L31/107 , Y02E10/50
摘要： Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the plurality of pixel, wherein the plurality of nanowires extend essentially perpendicularly from the substrate.
摘要翻译：本文描述的是被配置为是包括基板的太阳能紫外线检测器的装置; 多个像素; 在所述多个像素中的每一个中的多个纳米线，其中所述多个纳米线基本上垂直于所述衬底延伸。

75. 发明授权

US08835831B2 Polarized light detecting device and fabrication methods of the same 有权
标题翻译：偏振光检测装置及其制造方法
公开(公告)号：US08835831B2
公开(公告)日：2014-09-16
申请号：US13047392
申请日：2011-03-14
申请人： Young-June Yu , Munib Wober
发明人： Young-June Yu , Munib Wober
IPC分类号： G02F1/01 , H01L27/144 , H01L31/105 , H01L31/0352
CPC分类号： H01L27/14643 , G01J1/429 , G01J4/04 , H01L27/1443 , H01L27/14605 , H01L27/14629 , H01L27/14683 , H01L31/022408 , H01L31/028 , H01L31/035227 , H01L31/035281 , H01L31/105 , H01L31/107 , Y02E10/50
摘要： Described herein is a device operable to detect polarized light comprising: a substrate; a first subpixel; a second subpixel adjacent to the first subpixel; a first plurality of features in the first subpixel and a second plurality of features in the second subpixel, wherein the first plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a first direction parallel to the substrate and the second plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a second direction parallel to the substrate; wherein the first direction and the second direction are different; the first plurality of features and the second plurality of features react differently to the polarized light.
摘要翻译：这里描述的是可操作以检测偏振光的装置，包括：基板; 第一子像素与所述第一子像素相邻的第二子像素; 所述第一子像素中的第一多个特征和所述第二子像素中的第二多个特征，其中所述第一多个特征基本上垂直于所述基底延伸并且在平行于所述基底的第一方向上基本上平行延伸，并且所述第二多个特征基本上垂直于基底延伸并且在平行于基底的第二方向基本上平行延伸; 其中所述第一方向和所述第二方向不同; 第一多个特征和第二多个特征对偏振光的反应不同。

76. 发明申请

US20140252314A1 NANOWIRE PHOTO-DETECTOR GROWN ON A BACK-SIDE ILLUMINATED IMAGE SENSOR 有权
公开(公告)号：US20140252314A1
公开(公告)日：2014-09-11
申请号：US14281108
申请日：2014-05-19
申请人： ZENA TECHNOLOGIES, INC.
发明人： Young-June Yu , Munib Wober
IPC分类号： H01L27/146 , H01L31/0352
CPC分类号： H01L27/14625 , B82Y15/00 , B82Y20/00 , G02B6/107 , H01L27/14603 , H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14645 , H01L27/14649 , H01L31/02327 , H01L31/0352 , H01L31/035227
摘要： An embodiment relates to a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.

77. 发明申请

US20140246684A1 NANO STRUCTURED LEDS 审中-公开
标题翻译：纳米结构LED
公开(公告)号：US20140246684A1
公开(公告)日：2014-09-04
申请号：US14274448
申请日：2014-05-09
申请人： ZENA TECHNOLOGIES, INC.
发明人： Munib Wober
IPC分类号： H01L31/153
CPC分类号： H01L31/153 , B82Y20/00 , H01L27/14 , H01L27/1446 , H01L27/15 , H01L27/156 , H01L33/0012 , H01L33/06 , H01L33/16 , H01L33/56 , Y10S977/762 , Y10S977/95
摘要： An embodiment relates to a nanowire-containing LED device with optical feedback comprising a substrate, a nanowire protruding from a first side the substrate, an active region to produce light, a optical sensor and a electronic circuit, wherein the optical sensor is configured to detect at least a first portion of the light produced in the active region, and the electronic circuit is configured to control an electrical parameter that controls a light output of the active region. Yet, another embodiment relates to an image display having the nanowire-containing LED device with optical feedback.
摘要翻译：实施例涉及一种具有光学反馈的含纳米线的LED器件，包括衬底，从衬底的第一侧突出的纳米线，产生光的有源区，光学传感器和电子电路，其中光学传感器被配置为检测至少在有源区域中产生的光的第一部分，并且电子电路被配置为控制控制有源区域的光输出的电参数。然而，另一个实施例涉及具有含纳米线的LED装置的具有光学反馈的图像显示器。

78. 发明申请

US20130009040A1 ACTIVE PIXEL SENSOR WITH NANOWIRE STRUCTURED PHOTODETECTORS 失效
标题翻译：主动像素传感器与纳米结构的光电转换器
公开(公告)号：US20130009040A1
公开(公告)日：2013-01-10
申请号：US13543556
申请日：2012-07-06
申请人： Young-June YU , Munib Wober
发明人： Young-June YU , Munib Wober
IPC分类号： H01L27/00
CPC分类号： H01L27/14612 , H01L27/1461 , H01L27/14625 , H01L27/14643 , H01L27/14645 , H01L31/0232 , H01L31/02327 , H01L31/0352 , H01L31/035227 , H01L31/03529 , H01L31/101 , H01L31/102 , H01L31/1126 , Y02E10/50
摘要： “An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device.”
摘要翻译：一种形成为组合CMOS制造工艺和纳米线制造工艺的有源像素阵列的成像器件。阵列中的像素可以包括围绕纳米线的单个或多个摄像机。摄影门控制纳米线中的电位分布，允许在纳米线中积累光生电荷并传输电荷用于信号读出。每个像素可以包括读出电路，其可以包括复位晶体管，电荷转移开关晶体管，源极跟随放大器和像素选择晶体管。纳米线通常构造为在体半导体衬底上的垂直杆，以接收入射到纳米线尖端的光能。纳米线可以被配置为用作被配置为将光引导到衬底的光电检测器或波导。可以使用成像装置检测不同波长的光。

79. 发明授权

US08269985B2 Determination of optimal diameters for nanowires 有权
标题翻译：确定纳米线的最佳直径
公开(公告)号：US08269985B2
公开(公告)日：2012-09-18
申请号：US12472264
申请日：2009-05-26
申请人： Munib Wober
发明人： Munib Wober
IPC分类号： G01B11/14
CPC分类号： H01L22/20 , G01B11/08 , G01J3/28 , G01J3/465 , G01J3/513 , G01J2003/1213 , H01L27/14607 , H01L27/14645 , H01L27/14683
摘要： Methods of optimizing the diameters of nanowire photodiode light sensors. The method includes comparing the response of nanowire photodiode pixels having predetermined diameters with standard spectral response curves and determining the difference between the spectral response of the photodiode pixels and the standard spectral response curves. Also included are nanowire photodiode light sensors with optimized nanowire diameters and methods of scene reconstruction.
摘要翻译：优化纳米线光电二极管光传感器直径的方法。该方法包括比较具有预定直径的纳米线光电二极管像素与标准光谱响应曲线的响应，并确定光电二极管像素的光谱响应与标准光谱响应曲线之间的差异。还包括具有优化的纳米线直径和场景重建方法的纳米线光电二极管光传感器。

80. 发明申请

US20110133061A1 NANOWIRE PHOTO-DETECTOR GROWN ON A BACK-SIDE ILLUMINATED IMAGE SENSOR 有权
标题翻译： NANOWIRE光电探测器在背面照明的图像传感器上
公开(公告)号：US20110133061A1
公开(公告)日：2011-06-09
申请号：US12633323
申请日：2009-12-08
申请人： Young-June YU , Munib Wober
发明人： Young-June YU , Munib Wober
IPC分类号： H01L31/0232 , H01L31/09 , H01L27/146 , G02B6/02
CPC分类号： H01L27/14625 , B82Y15/00 , B82Y20/00 , G02B6/107 , H01L27/14603 , H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14645 , H01L27/14649 , H01L31/02327 , H01L31/0352 , H01L31/035227
摘要： An embodiment relates to a device comprising a substrate having a front side and a back-side that is exposed to incoming radiation, a nanowire disposed on the substrate and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.
摘要翻译：一个实施方案涉及一种装置，其包括具有暴露于入射辐射的正面和背面的衬底，设置在衬底上的纳米线和设置在正面上的图像感测电路，其中纳米线被配置为两者用于传输高达选择波长的波长的信道和有源元件，以检测通过纳米线传输的选择波长的波长。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式