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    • 71. 发明授权
    • Programming architecture for a programmable integrated circuit employing
test antifuses and test transistors
    • 采用测试反熔丝和测试晶体管的可编程集成电路的编程架构
    • US5966028A
    • 1999-10-12
    • US929654
    • 1997-09-17
    • James M. Apland
    • James M. Apland
    • H02H9/00H03K17/22H03K19/177
    • H03K19/17764H03K17/223H03K19/17736H03K19/1778H03K19/17796
    • A programmable integrated circuit (see FIG. 5) has a plurality of linearly extending wire segments with antifuses disposed between each wire segment and a plurality of linearly extending programming conductors that are perpendicular to the wire segments. A plurality of programming transistors are disposed between a corresponding respective one of the wire segments and a corresponding respective one of the programming conductors. A programming control conductor extending from a programming control driver is coupled to the gate electrode of each of the programming transistors as well as the gate electrode of a test transistor. A test antifuse is coupled in series with the test transistor. When the programming control conductor can drive the test transistor with an adequately high voltage to program the test antifuse, it is assumed that the programming control conductor can drive the programming transistor with an adequately high voltage to program the antifuses. The test transistor may be disposed on the programming control conductor at the opposite end from the programming control driver.
    • 可编程集成电路(参见图5)具有多个线性延伸的线段,其中反熔丝设置在每个线段和垂直于线段的多个线性延伸的编程导体之间。 多个编程晶体管被布置在相应的一个线段和对应的相应的一个编程导体之间。 从编程控制驱动器延伸的编程控制导体耦合到每个编程晶体管的栅电极以及测试晶体管的栅电极。 测试反熔丝与测试晶体管串联耦合。 当编程控制导体可以用足够高的电压驱动测试晶体管来对测试反熔丝进行编程时,假设编程控制导体可以用足够高的电压来驱动编程晶体管来编程反熔丝。 测试晶体管可以设置在与编程控制驱动器相对的编程控制导体上。
    • 72. 发明授权
    • Security antifuse that prevents readout of some but not other
information from a programmed field programmable gate array
    • 防止从编程的现场可编程门阵列读出一些而不是其他信息的安全反熔丝
    • US5898776A
    • 1999-04-27
    • US754461
    • 1996-11-21
    • James M. AplandDavid D. EatonAndrew K. Chan
    • James M. AplandDavid D. EatonAndrew K. Chan
    • G01R31/317G01R31/3185H04L9/00
    • G01R31/318519G01R31/31719G01R31/318555G01R31/31702G01R31/318558
    • A field programmable gate array has a security antifuse which when programmed prevents readout of data indicative of how the interconnect structure is programmed but which does not prevent readout of data indicative of which other antifuses are programmed. In some embodiments, the programming control shift registers adjacent the left and right sides are the field programmable gate array are disabled when the security antifuse is programmed but the programming control shift registers adjacent the top and bottom sides of the field programmable gate array are not disabled. A second security antifuse is also provided which when programmed disables a JTAG boundary scan register but does not disable a JTAG bypass register. Information can therefore be shifted through the JTAG test circuitry without allowing the JTAG circuitry to be used to extract information indicative of how the interconnect structure is programmed. Logic module and interface cell scan paths are provided and special test instructions are supported which allow test vectors to be loaded into the logic module and interface cell scan paths.
    • 现场可编程门阵列具有安全反熔丝,其在编程时防止读出指示互连结构如何编程的数据,但是不防止读出指示哪个其它反熔丝被编程的数据。 在一些实施例中,当安全反熔丝被编程但是与现场可编程门阵列的顶侧和底侧相邻的编程控制移位寄存器未被禁用时,与左侧和右侧相邻的编程控制移位寄存器被禁用, 。 还提供了第二个安全反熔丝,当编程时禁用JTAG边界扫描寄存器,但不禁用JTAG旁路寄存器。 因此,信息可以通过JTAG测试电路转移,而不允许JTAG电路提取指示互连结构如何编程的信息。 提供逻辑模块和接口单元扫描路径,并支持特殊测试指令,允许将测试向量加载到逻辑模块和接口单元扫描路径中。
    • 73. 发明授权
    • Clock network for field programmable gate array
    • 现场可编程门阵列的时钟网络
    • US5892370A
    • 1999-04-06
    • US781985
    • 1997-01-03
    • David D. EatonMukesh T. LullaKer-Ching Liu
    • David D. EatonMukesh T. LullaKer-Ching Liu
    • H02H9/00H03K17/22H03K19/177H03K7/38H03K19/00
    • H03K17/223H03K19/177
    • A clock network of a field programmable gate array has a first clock bus extending across the chip in a first dimension. A clock pad can be coupled to the first clock bus if the clock network is to be driven from the clock pad. An output of a selected logic cell can be coupled to the first clock bus if the clock network is to be driven from a logic cell. To increase speed of the clock network, the first clock bus is segmented (in one embodiment, collinearly extending segments can be selectively coupled together via selectively programmable antifuses) so that only a short piece of the first clock bus is used to couple either the pad or the logic cell to the clock network in high speed applications.
    • 现场可编程门阵列的时钟网络具有在第一维度上跨越芯片延伸的第一时钟总线。 如果时钟网络要从时钟焊盘驱动,则时钟焊盘可以耦合到第一个时钟总线。 如果要从逻辑单元驱动时钟网络,则所选逻辑单元的输出可以耦合到第一时钟总线。 为了增加时钟网络的速度,第一时钟总线被分段(在一个实施例中,共线延伸段可以通过有选择地可编程的反熔丝选择性地耦合在一起),使得仅使用第一时钟总线的短片来耦合焊盘 或逻辑单元到高速应用中的时钟网络。
    • 74. 发明授权
    • Reducing propagation delays in a programmable device
    • 减少可编程器件中的传播延迟
    • US5729468A
    • 1998-03-17
    • US520441
    • 1995-08-29
    • William D. Cox
    • William D. Cox
    • G06F17/50H03K19/177G06F17/10
    • G06F17/5054H03K19/17704
    • Select sets of a logic function corresponding to an output of a first logic circuit are determined. These select sets are used to obtain a second logic circuit, the logic function corresponding to the output of which is the same as the logic function corresponding to the output of the first logic circuit. A propagation delay through the second logic circuit may be smaller than a corresponding delay through the first logic circuit. Sometimes, such a smaller propagation delay through the second logic circuit results in the second logic circuit having a smaller critical path delay. The second logic circuit may therefore have a greater maximum operating speed than the first logic circuit.
    • 确定与第一逻辑电路的输出对应的逻辑功能的选择集。 这些选择组用于获得第二逻辑电路,对应于其输出的逻辑功能与对应于第一逻辑电路的输出的逻辑功能相同。 通过第二逻辑电路的传播延迟可以小于通过第一逻辑电路的对应延迟。 有时,通过第二逻辑电路的这种较小的传播延迟导致第二逻辑电路具有较小的关键路径延迟。 因此,第二逻辑电路可以具有比第一逻辑电路更大的最大工作速度。
    • 76. 发明授权
    • Integrated circuit facilitating simultaneous programming of multiple
antifuses
    • 集成电路,便于同时编程多个反熔丝
    • US5600262A
    • 1997-02-04
    • US540726
    • 1995-10-11
    • Paige A. Kolze
    • Paige A. Kolze
    • G11C17/18H03K19/177
    • G11C17/18
    • To facilitate the simultaneous programming of multiple antifuses on an integrated circuit, a first current path is established from a first programming terminal (VPP1) of a programmable logic device through a first antifuse to be programmed and a second current path is established from a second programming terminal (VPP2) of the programmable logic device through a second antifuse to be programmed. By supplying the programming current for programming the first antifuse from a different terminal than the programming current for programming the second antifuse, the two antifuses can be programmed simultaneously with an adequate amount of programming current being supplied to each antifuse. A programming current multiplexer circuit is disclosed for selectively coupling either a first programming voltage (VPP1) terminal, a second programming voltage (VPP2), or a ground terminal (GND) to a programming bus and/or to an antifuse to be programmed. The first and second current paths can be established using multiple such programming current multiplexer circuits.
    • 为了便于在集成电路上同时对多个反熔丝进行编程,从可编程逻辑器件的第一编程端(VPP1)通过待编程的第一反熔丝建立第一电流路径,并且从第二编程建立第二电流路径 可编程逻辑器件的端子(VPP2)通过要编程的第二反熔丝。 通过提供用于编程来自不同于用于编程第二反熔丝的编程电流的不同端子的第一反熔丝的编程电流,可以在向每个反熔丝提供足够数量的编程电流的同时对两个反熔丝进行编程。 公开了一种编程电流多路复用器电路,用于将第一编程电压(VPP1)端子,第二编程电压(VPP2)或接地端子(GND))选择性地耦合到编程总线和/或将要编程的反熔丝。 可以使用多个这样的编程电流多路复用器电路来建立第一和第二电流路径。
    • 77. 发明授权
    • Electrically programmable interconnect structure having a PECVD
amorphous silicon element
    • 具有PECVD非晶硅元件的电可编程互连结构
    • US5502315A
    • 1996-03-26
    • US161504
    • 1993-12-02
    • Hua-Thye ChuaAndrew K. ChanJohn M. BirknerRalph G. WhittenRichard L. BechtelMammen Thomas
    • Hua-Thye ChuaAndrew K. ChanJohn M. BirknerRalph G. WhittenRichard L. BechtelMammen Thomas
    • H01L23/525H02L27/02
    • H01L23/5252H01L2924/0002
    • In one method for forming amorphous silicon antifuses with significantly reduced leakage current, a film of amorphous silicon is formed in a antifuse via between two electrodes. The amorphous silicon film is deposited using plasma enhanced chemical vapor deposition, preferably in an silane-argon environment and at a temperature between 200 and 500 degrees C., or reactively sputtered in a variety of reactive gases. In another method, an oxide layer is placed between two amorphous silicon film layers. In yet another method, one of the amorphous silicon film layers about the oxide layer is doped. In another embodiment, a layer of conductive, highly diffusible material is formed either on or under the amorphous silicon film. The feature size and thickness of the amorphous silicon film are selected to minimize further the leakage current while providing the desired programming voltage. A method also is described for for forming a field programmable gate array with antifuses.
    • 在形成具有显着降低的漏电流的非晶硅反熔丝的一种方法中,在两个电极之间的反熔丝通孔中形成非晶硅膜。 非晶硅膜使用等离子体增强化学气相沉积,优选在硅烷 - 氩气环境中并在200-500℃的温度下沉积,或者以各种反应性气体反应溅射。 在另一种方法中,将氧化物层放置在两个非晶硅膜层之间。 在另一种方法中,围绕氧化物层的非晶硅膜之一被掺杂。 在另一个实施例中,在非晶硅膜上或下形成导电的,高度可扩散的材料层。 选择非晶硅膜的特征尺寸和厚度,以在提供期望的编程电压的同时进一步最小化漏电流。 还描述了用于形成具有反熔丝的现场可编程门阵列的方法。
    • 80. 发明授权
    • Field programmable antifuse device and programming method therefor
    • 现场可编程反熔丝装置及其编程方法
    • US5327024A
    • 1994-07-05
    • US907904
    • 1992-07-02
    • William D. Cox
    • William D. Cox
    • G11C17/16H03K19/177
    • H03K19/17748G11C17/16H03K19/17704H03K19/17736H03K19/1778H03K19/17796
    • A method for reducing the resistance of a programming path through a programmable antifuse from a programming voltage to ground. A previously programmed helper antifuse connected somewhere along a two branch programming path is connected to either the programming voltage or to ground. As a result, a three branch programming path is established from the programming voltage to the antifuse to be programmed and from the antifuse to be programmed to ground. By adding the third branch to the programming path, the resistance of the programming path is reduced, thereby allowing a higher voltage to be dropped across the antifuse to be programmed during programming and thereby allowing increased current flow through the antifuse to be programmed during programming. In another embodiment, two or more helper antifuses are used to establish a four or more branch programming path having a still lower resistance from the programming voltage to ground. In yet another embodiment, the programming of antifuses occurs in two steps. First, multiple antifuses are partially programmed separately. Second, these partially programmed antifuses are connected together in series so that a programming current can flow through all of the partially programmed antifuses at once to complete programming of the multiple antifuses.
    • 一种用于将通过可编程反熔丝的编程路径的电阻从编程电压降低到地的方法。 连接在两个分支编程路径的某处的先前编程的辅助反熔丝连接到编程电压或接地。 结果,从编程电压到要编程的反熔丝和从反熔丝编程到地的三个分支编程路径被建立。 通过将第三分支添加到编程路径中,编程路径的电阻降低,从而允许在编程期间在待编程的反熔丝之间降低更高的电压,从而允许在编程期间通过反熔丝增加的电流流动被编程。 在另一个实施例中,使用两个或更多个辅助反熔丝来建立四个或更多个分支编程路径,其具有从编程电压到地的更低的电阻。 在另一个实施例中,反熔丝的编程分两步进行。 首先,单独部分编程多个反熔丝。 第二,这些部分编程的反熔丝串联连接在一起,使得编程电流可以一次流过所有部分编程的反熔丝,以完成对多个反熔丝的编程。