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71. 发明授权

US07235841B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07235841B2
公开(公告)日：2007-06-26
申请号：US10973946
申请日：2004-10-26
申请人： Yasuhiko Onishi , Takeyoshi Nishimura , Yasushi Niimura , Hitoshi Abe
发明人： Yasuhiko Onishi , Takeyoshi Nishimura , Yasushi Niimura , Hitoshi Abe
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L29/00
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0653 , H01L29/0661 , H01L29/0696
摘要： A semiconductor device includes an active region, an alternating conductivity type layer, and an insulation region surrounding the alternating conductivity type layer provided in a periphery section as a voltage withstanding section. The insulation region is made of an insulator with the critical electric field strength higher than that of the semiconductor and reaches an n+-drain layer on the bottom surface side of the device from a surface on the side on which a surface structure section is formed. In the alternating conductivity type layer, the width of the p-type partition region adjacent to the insulation region is made narrower than the width of the p-type partition region not adjacent to the insulation region to ensure a balanced state of charges at the end of the drift section made up of the alternating conductivity type layer. A high breakdown voltage is ensured with the length of the periphery section shortened.
摘要翻译：半导体器件包括有源区，交变导电类型层和围绕设置在周边部分中的交变导电类型层的绝缘区域作为耐压部分。绝缘区域由临界电场强度高于半导体的绝缘体制成，并从设备侧面上的表面到达器件底面侧的n + 其形成表面结构部分。在交变导电型层中，与绝缘区域相邻的p型分隔区域的宽度比不与绝缘区域相邻的p型分隔区域的宽度窄，以确保最终的电荷平衡状态由交替导电型层构成的漂移部分。确保周边部分的长度缩短的高击穿电压。

72. 发明申请

US20070082414A1 Perpendicular magnetic recording medium, method for production of the same, and magnetic recording apparatus 审中-公开
标题翻译：垂直磁记录介质，其制造方法和磁记录装置
公开(公告)号：US20070082414A1
公开(公告)日：2007-04-12
申请号：US10578681
申请日：2005-03-14
申请人： Sadayuki Watanabe , Yasushi Sakai
发明人： Sadayuki Watanabe , Yasushi Sakai
IPC分类号： H01L21/00
CPC分类号： G11B5/7325 , G11B5/65 , G11B5/667 , G11B5/7379
摘要： A perpendicular magnetic recording medium having compatibility between low noises and high thermal stability is provided. In the present medium having at least an underlayer, a magnetic recording layer, a protective layer and a lubricant layer sequentially stacked on a nonmagnetic substrate, the underlayer is composed from at least one element selected from Ru, Rh, Os, Ir and Pt, the magnetic recording layer has a granular structure, and its composition is Co100-a-b-cPtaCrbBc)100-dMd (M is an oxide or a nitride of at least one element of Cr, Al, Ti, Si, Ta, Hf, Zr, Y and Ce, and a, b, c and d meet the condition of 0
摘要翻译：提供了具有低噪声和高热稳定性的兼容性的垂直磁记录介质。在至少具有下层，磁记录层，保护层和顺序层叠在非磁性基板上的润滑剂层的介质中，底层由选自Ru，Rh，Os，Ir和Pt中的至少一种元素构成，磁记录层具有颗粒状结构，其组成为100％以上的碳酸钡。（M是Cr，Al，Ti，Si，Ta，Hf，Zr，Y的至少一种元素的氧化物或氮化物）和Ce，a，b，c和d满足0

73. 发明申请

US20070048641A1 Method of producing an electrophotographic photoconductor and an electrophotographic photoconductor produced by this method 有权
标题翻译：通过该方法制造电子照相感光体和电子照相感光体的方法
公开(公告)号：US20070048641A1
公开(公告)日：2007-03-01
申请号：US11510845
申请日：2006-08-28
申请人： Hidetaka Yahagi
发明人： Hidetaka Yahagi
IPC分类号： G03G5/10
CPC分类号： G03G5/102 , G03G5/005 , G03G5/104 , G03G2215/00957
摘要： A method of producing an electrophotographic photoconductor, which prevents filler material in a coating liquid from aggregating onto etching pits formed on a surface of an aluminum raw drum. A photoconductor produced by the method of invention scarcely generates printing defects. The method includes steps of cutting a surface of an aluminum cylindrical substrate, degreasing and cleaning the surface of the aluminum cylindrical substrate with an aqueous detergent after the cutting step, and applying and forming a coating layer containing a filler material on the aluminum cylindrical substrate after the degreasing and cleaning step. Nickel concentration in the aluminum cylindrical substrate used in the method of invention is at most 50 ppm by weight.
摘要翻译：制造电子照相感光体的方法，其防止涂布液中的填充材料聚集在形成在铝原料鼓的表面上的蚀刻凹坑上。通过本发明的方法制造的感光体几乎不产生印刷缺陷。该方法包括以下步骤：切割铝圆柱形基材的表面，在切割步骤之后用含水洗涤剂对铝圆柱形基材的表面进行脱脂和清洁，并在铝圆柱形基材上涂覆并形成含有填料的涂层，之后脱脂和清洁步骤。在本发明方法中使用的铝圆柱形基材中的镍浓度至多为50重量ppm。

74. 发明授权

US07183013B2 Magnetic recording medium and manufacturing method thereof 有权
标题翻译：磁记录介质及其制造方法
公开(公告)号：US07183013B2
公开(公告)日：2007-02-27
申请号：US10764813
申请日：2004-01-26
申请人： Tadaaki Oikawa , Takahiro Shimizu , Hiroyuki Uwazumi , Naoki Takizawa
发明人： Tadaaki Oikawa , Takahiro Shimizu , Hiroyuki Uwazumi , Naoki Takizawa
IPC分类号： G11B5/66 , G11B5/70
CPC分类号： G11B5/7325 , G11B5/65 , G11B5/656 , G11B5/8404
摘要： A nonmagnetic foundation layer is made to have a body-centered cubic crystal structure with a preferred crystal orientation plane being the bcc (110) plane. A nonmagnetic intermediate layer, provided between the foundation layer and a granular magnetic layer, has a hexagonal close-packed structure with the hcp (100) plane or the hcp (200) plane being the preferred orientation plane. Furthermore, the crystal lattice misfit amount between the nonmagnetic intermediate layer 3 and the granular magnetic layer is made to be not more than 10% for each of an a-axis and a c-axis. As a result, epitaxial growth of ferromagnetic crystals in the granular magnetic layer, which has an hcp structure, is promoted, and hence the crystallinity of the magnetic layer is increased, and thus it becomes possible to simultaneously realize an increase in coercivity and a reduction in noise. Depositing the layers on an unheated substrate yields reduces manufacturing costs.
摘要翻译：将非磁性基础层制成具有体心立方晶体结构，其中优选的晶体取向平面是bcc（110）面。设置在基础层和粒状磁性层之间的非磁性中间层具有hcp（100）面或hcp（200）面为优选取向面的六方密堆积结构。此外，非磁性中间层3和粒状磁性层之间的晶格失配量对于a轴和c轴分别为10％以下。结果，促进了具有hcp结构的粒状磁性层中的铁磁晶体的外延生长，因此磁性层的结晶度增加，因此可以同时实现矫顽力的提高和还原在噪音将层沉积在未加热的基底上会降低制造成本。

75. 发明授权

US07151297B2 Insulated gate semiconductor device 有权
标题翻译：绝缘栅半导体器件
公开(公告)号：US07151297B2
公开(公告)日：2006-12-19
申请号：US10993146
申请日：2004-11-19
申请人： Hiroki Wakimoto , Seiji Momota , Masahito Otsuki
发明人： Hiroki Wakimoto , Seiji Momota , Masahito Otsuki
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/0696 , H01L29/7397
摘要： A trench IGBT is disclosed which meets the specifications for turn-on losses and radiation noise. It includes a p-type base layer divided into different p-type base regions by trenches. N-type source regions are formed in only some of the p-type base regions. There is a gate runner in the active region of the trench IGBT. Contact holes formed in the vicinities of the terminal ends of the trenches and on both sides of the gate runner electrically connect some of the p-type base regions that do not include source regions to an emitter electrode. The number N1 of p-type base regions that are connected electrically to the emitter electrode and the number N2 of p-type base regions that are insulated from the emitter electrode are related with each other by the expression 25≦{N1/(N1+N2)}×100≦75.
摘要翻译：公开了一种满足导通损耗和辐射噪声规范的沟槽IGBT。它包括通过沟槽分成不同p型基极区的p型基极层。仅在一些p型基区中形成N型源极区。在沟槽IGBT的有源区域中有一个栅极流道。形成在沟槽的末端附近并且栅极流道两侧的接触孔将不包括源极区域的一些p型基极区域电连接到发射极电极。与发射极电气电连接的p型基极区域的数量N1和与发射极电极绝缘的p型基极区域的数量N2彼此相关联，通过表达式25 <= {N1 /（N1 + N2x100 <= 75。

76. 发明授权

US07135751B2 High breakdown voltage junction terminating structure 有权
标题翻译：高击穿电压结端接结构
公开(公告)号：US07135751B2
公开(公告)日：2006-11-14
申请号：US10896323
申请日：2004-07-21
申请人： Shinichi Jimbo , Tatsuhiko Fujihira
发明人： Shinichi Jimbo , Tatsuhiko Fujihira
IPC分类号： H01L23/58
CPC分类号： H01L29/7394 , H01L27/067 , H01L27/1203 , H01L29/8611 , H01L2224/48091 , H01L2224/48137 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19041 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A high breakdown voltage junction terminating structure having a loop-like RESURF structure formed on a SOI substrate is disclosed. A lateral IGBT, a lateral FWD, an output stage element and a driving circuit are formed in the inside region of the structure. The lateral IGBT and the lateral FWD are surrounded by a trench isolation region as an insulation region. Drain electrodes of high breakdown voltage NMOSFETs are provided on the inside of the high breakdown voltage junction terminating structure. Along with this, a gate electrode and a source electrode of each of the NMOSFETs are provided on the outside of the high breakdown voltage junction terminating structure. The periphery of the high breakdown voltage junction terminating structure is surrounded by a trench isolation region as a second insulation region. A control circuit is provided on the outside of the second insulation region. With this structure, a high breakdown voltage semiconductor device is obtained at low cost, in which power elements, circuits for driving the power elements and logic elements for controlling the power elements are integrated together into the same chip.
摘要翻译：公开了一种在SOI衬底上形成的具有环状RESURF结构的高击穿电压结端接结构。在结构的内部区域中形成横向IGBT，横向FWD，输出级元件和驱动电路。横向IGBT和横向FWD被作为绝缘区域的沟槽隔离区包围。在高击穿电压结端接结构的内侧设置有高耐压NMOSFET的漏电极。与此同时，每个NMOSFET的栅电极和源电极设置在高击穿电压结端接结构的外侧。高击穿电压结端接结构的周边被作为第二绝缘区域的沟槽隔离区包围。控制电路设置在第二绝缘区域的外侧。利用这种结构，以低成本获得高耐压半导体器件，其中功率元件，用于驱动功率元件的电路和用于控制功率元件的逻辑元件集成在一起成为同一芯片。

77. 发明申请

US20060228587A1 Perpendicular magnetic recording medium 有权
公开(公告)号：US20060228587A1
公开(公告)日：2006-10-12
申请号：US11370206
申请日：2006-03-07
申请人： Yoshiyuki Kuboki
发明人： Yoshiyuki Kuboki
IPC分类号： G11B5/66
CPC分类号： G11B5/667
摘要： A perpendicular magnetic recording medium having a soft magnetic backing layer in which amount of cobalt elution is suppressed without imposing restraint on the construction of the protective layer is disclosed. The perpendicular magnetic recording medium of the invention comprises at least a soft magnetic backing layer, a magnetic recording layer, and a protective layer sequentially laminated on a nonmagnetic substrate, the soft magnetic backing layer containing iron and cobalt, and further containing at least two elements selected from Si, Ni, Ta, Nb, Zr, Ti, Cr, Mo, and B, and the surface roughness of the soft magnetic backing layer being in a range of 0.2 nm to 0.8 nm in center line average roughness. The iron concentration in the soft magnetic backing layer preferably is in the range of 40 at % to 85 at %, the cobalt concentration preferably is in a range of 10 at % to 45 at %, and the total concentration of Si, Ni, Ta, Nb, Zr, Ti, Cr, Mo, and B is in a range of 20 at % to 50 at %.

78. 发明申请

US20060227518A1 Micro electric power converter 有权
标题翻译：微电力转换器
公开(公告)号：US20060227518A1
公开(公告)日：2006-10-12
申请号：US11339550
申请日：2006-01-26
申请人： Haruhiko Nishio , Yasushi Katayama
发明人： Haruhiko Nishio , Yasushi Katayama
IPC分类号： H05K7/00
CPC分类号： H02M3/155 , H01F17/0033 , H01F27/292 , H01L23/15 , H01L23/49822 , H01L23/49838 , H01L23/66 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16235 , H01L2924/00014 , H01L2924/13091 , H01L2924/15311 , H01L2924/19015 , H01L2924/3011 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A thin film magnetic induction element includes a ferrite substrate, a coil provided across the ferrite substrate and including connection conductors and coil conductors, and terminals provided on perimeter portions of the substrate. Terminals capable of being adversely affected by an induced magnetic flux, such as a VDD terminal, a CGND terminal, an IN terminal, a PVDD terminal, a PGND terminal, an FB terminal, a CE terminal, and an AL terminal are arranged along the Y-direction of the substrate, in which the magnetic flux density is low. Terminals substantially incapable of being adversely affected by an induced magnetic flux are arranged along the X-direction of the substrate, in which the magnetic flux density is high. A micro electric power converter having the thin film magnetic induction element is less susceptible to circuit malfunctions.
摘要翻译：薄膜磁感应元件包括铁氧体衬底，设置在铁氧体衬底两侧并包括连接导体和线圈导体的线圈以及设置在衬底的周边部分上的端子。沿着该端子，可以受到诸如VDD端子，CGND端子，IN端子，PVDD端子，PGND端子，FB端子，CE端子和AL端子的感应磁通量的不利影响的端子基板的Y方向，其中磁通密度低。基本不能受到感应磁通的不良影响的端子沿着基板的X方向排列，其中磁通密度高。具有薄膜磁感应元件的微功率转换器不易受电路故障的影响。

79. 发明申请

US20060154113A1 Perpendicular magnetic recording medium and magnetic recording device 审中-公开
公开(公告)号：US20060154113A1
公开(公告)日：2006-07-13
申请号：US11297792
申请日：2005-12-08
申请人： Sadayuki Watanabe , Yasushi Sakai
发明人： Sadayuki Watanabe , Yasushi Sakai
IPC分类号： G11B5/65
CPC分类号： G11B5/65 , G11B5/656 , G11B5/667 , G11B5/7325 , G11B5/7379
摘要： A perpendicular magnetic recording medium and a magnetic recording device with the medium are disclosed. Ferromagnetic crystal grains in a granular magnetic recording layer are grown with a constant grain diameter in a columnar shape, and the nonmagnetic grain boundaries comprise at least two types of oxides or nitrides, preferably of elements selected from Cr, Si, Al, Ti, Ta, Hf, Zr, Y, Ce, and B. The maximum G1 of absolute values of standard Gibbs free energy of formation for oxidation of ferromagnetic elements composing the ferromagnetic crystal grains, the minimum G2 and the second smallest G3 of absolute values of standard Gibbs free energy of formation per 1 mol of oxygen molecules for oxidation of elements composing the nonmagnetic grain boundaries satisfy inequalities G1 (G3−G2) and G3−G2 is preferably smaller than 200 kJ/mol. The oxides can be replaced by nitrides, in which case the maximum G11 of absolute values of standard Gibbs free energy of formation per one mole of nitrogen molecules in nitridation of ferromagnetic elements composing the ferromagnetic crystal grain, and the minimum G12 and the second smallest G13 of absolute values of standard Gibbs free energy of formation per one mole of nitrogen molecules in nitridation of elements composing the nonmagnetic grain boundary satisfy the following inequalities G11 (G13−G12), and G13−G12 is preferably smaller than 200 kJ/mol.

80. 发明申请

US20060093867A1 Perpendicular magnetic recording medium and the method of manufacturing the same 有权
标题翻译：垂直磁记录介质及其制造方法
公开(公告)号：US20060093867A1
公开(公告)日：2006-05-04
申请号：US11255579
申请日：2005-10-21
申请人： Shunji Takenoiri , Yasushi Sakai
发明人： Shunji Takenoiri , Yasushi Sakai
IPC分类号： G11B5/66 , B05D5/12
CPC分类号： G11B5/7325 , G11B5/65 , G11B5/8404
摘要： A perpendicular magnetic recording medium includes a soft magnetic backing layer, an underlayer, a nonmagnetic intermediate layer, and a magnetic recording layer sequentially deposited on a nonmagnetic substrate. The underlayer can contain cobalt, nickel, and iron and have an fcc structure and exhibit soft magnetic property. The underlayer preferably contains nickel in a range of 30 to 88 at % and iron in a range of 0.1 to 22 at %. The underlayer can further contain Si, B, Nb, N, Ta, Al, Pd, Cr, or Mo. The nonmagnetic intermediate layer preferably contains at least one element selected from Ru, Re, Pd, Ir, Pt, and Rh. The magnetic recording layer preferably has a granular structure. A seed layer can be further provided between the soft magnetic backing layer and the underlayer.
摘要翻译：垂直磁记录介质包括顺序沉积在非磁性基底上的软磁背衬层，底层，非磁性中间层和磁记录层。底层可以包含钴，镍和铁，并且具有fcc结构并表现出软磁性。底层优选含有30〜88at％范围内的镍和0.1〜22at％的铁。底层可以进一步含有Si，B，Nb，N，Ta，Al，Pd，Cr或Mo。非磁性中间层优选含有选自Ru，Re，Pd，Ir，Pt和Rh中的至少一种元素。磁记录层优选具有粒状结构。可以在软磁背衬层和底层之间进一步设置种子层。

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