专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20080017850A1 METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS 有权
公开(公告)号：US20080017850A1
公开(公告)日：2008-01-24
申请号：US11744611
申请日：2007-05-04
申请人： Martin Koenemann , Peter Erk , Zhenan Bao , Mang-Mang Ling
发明人： Martin Koenemann , Peter Erk , Zhenan Bao , Mang-Mang Ling
IPC分类号： H01L51/30 , C07D471/08 , H01L51/40 , C07D471/22
CPC分类号： H01L51/0053 , C07D471/06 , C07D471/16 , C07D493/06 , H01L27/283 , H01L51/0545 , H01L51/0558
摘要： A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.

72. 发明申请

US20070069243A1 FORMING CLOSELY SPACED ELECTRODES 有权
标题翻译：形成密闭电极
公开(公告)号：US20070069243A1
公开(公告)日：2007-03-29
申请号：US11424655
申请日：2006-06-16
申请人： Zhenan Bao , Jie Zheng , James Sturm , Troy Graves-Abe
发明人： Zhenan Bao , Jie Zheng , James Sturm , Troy Graves-Abe
IPC分类号： H01L29/76 , B32B1/00
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , H01L51/0021 , H01L51/0595 , Y10S977/858 , Y10S977/891 , Y10T428/26
摘要： The present invention provides an apparatus and a method of fabricating the apparatus. The apparatus comprises a substrate having a planar surface and first and second electrodes located on the planar surface. The first electrode has a top surface and a lateral surface, and the lateral surface has an edge near or in contact with the substrate. An electrode insulating layer is located on the top surface and a self-assembled layer located on the lateral surface. The second electrode is in contact with both the self-assembled layer and the electrode insulating layer.
摘要翻译：本发明提供一种制造该装置的装置和方法。该装置包括具有平坦表面的基底和位于平坦表面上的第一和第二电极。第一电极具有顶表面和侧表面，并且侧表面具有与基底接近或接触的边缘。电极绝缘层位于顶表面上，并且位于侧表面上的自组装层。第二电极与自组装层和电极绝缘层接触。

73. 发明授权

US07189663B2 Organic semiconductor device having an active dielectric layer comprising silsesquioxanes 有权
标题翻译：具有包含倍半硅氧烷的活性介电层的有机半导体器件
公开(公告)号：US07189663B2
公开(公告)日：2007-03-13
申请号：US11042240
申请日：2005-01-25
申请人： Zhenan Bao , Valerie Jeanne Kuck , Mark Anthony Paczkowski
发明人： Zhenan Bao , Valerie Jeanne Kuck , Mark Anthony Paczkowski
IPC分类号： H01L21/31 , H01L29/76
CPC分类号： H01L51/0516 , H01L21/02137 , H01L21/02216 , H01L21/02282 , H01L21/02315 , H01L21/3124 , H01L51/0036 , H01L51/0052 , H01L51/0078 , H01L51/0545
摘要： An organic field effect transistor (FET) is described with an active dielectric layer comprising a low-temperature cured dielectric film of a liquid-deposited silsesquioxane precursor. The dielectric film comprises a silsesquioxane having a dielectric constant of greater than 2. The silsesquioxane dielectric film is advantageously prepared by curing oligomers having alkyl(methyl) and/or alkyl(methyl) pendant groups. The invention also embraces a process for making an organic FET comprising providing a substrate suitable for an organic FET; applying a liquid-phase solution of silsesquioxane precursors over the surface of the substrate; and curing the solution to form a silsesquioxane active dielectric layer. The organic FET thus produced has a high-dielectric, silsesquioxane film with a dielectric constant of greater than about 2, and advantageously, the substrate comprises an indium-tin oxide coated plastic substrate.
摘要翻译：有机场效应晶体管（FET）用具有液晶沉积倍半硅氧烷前体的低温固化电介质膜的有源电介质层进行描述。电介质膜包括介电常数大于2的倍半硅氧烷。有效地通过固化具有（甲基）和/或烷基（甲基）侧基的低聚物来制备倍半硅氧烷介电膜。本发明还包括制造有机FET的方法，其包括提供适合于有机FET的衬底; 在所述基材的表面上施加倍半硅氧烷前体的液相溶液; 并固化该溶液以形成倍半硅氧烷活性介电层。由此产生的有机FET具有介电常数大于约2的高电介质的倍半硅氧烷膜，并且有利的是，衬底包括氧化铟锡涂覆的塑料衬底。

74. 发明授权

US07119356B2 Forming closely spaced electrodes 有权
公开(公告)号：US07119356B2
公开(公告)日：2006-10-10
申请号：US10803244
申请日：2004-03-18
申请人： Zhenan Bao , Jie Zheng , James C. Sturm , Troy Graves-Abe
发明人： Zhenan Bao , Jie Zheng , James C. Sturm , Troy Graves-Abe
IPC分类号： H01L29/06
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , H01L51/0021 , H01L51/0595 , Y10S977/858 , Y10S977/891 , Y10T428/26
摘要： The present invention provides an apparatus and a method of fabricating the apparatus. The apparatus comprises a substrate having a planar surface and first and second electrodes located on the planar surface. The first electrode has a top surface and a lateral surface, and the lateral surface has an edge near or in contact with the substrate. An electrode insulating layer is located on the top surface and a self-assembled layer located on the lateral surface. The second electrode is in contact with both the self-assembled layer and the electrode insulating layer.

75. 发明授权

US07115900B2 Devices having patterned regions of polycrystalline organic semiconductors, and methods of making the same 有权
标题翻译：具有多晶有机半导体图案化区域的器件及其制造方法
公开(公告)号：US07115900B2
公开(公告)日：2006-10-03
申请号：US10722613
申请日：2003-11-26
申请人： Joanna Aizenberg , Zhenan Bao , Alejandro L. Briseno , Yong-Jin Han , Hyunsik Moon
发明人： Joanna Aizenberg , Zhenan Bao , Alejandro L. Briseno , Yong-Jin Han , Hyunsik Moon
IPC分类号： H01L35/24
CPC分类号： H01L27/28 , B82Y10/00 , B82Y30/00 , H01L51/0004 , H01L51/0052 , H01L51/0545 , Y10T428/31511 , Y10T428/31663
摘要： Semiconductor apparatus comprising a substrate having a substrate surface; a first dielectric layer comprising molecules of a first compound, the molecules of the first compound having first ends and second ends, the first ends being covalently bonded to a first region of the substrate surface, the second ends having aromatic regions; and a polycrystalline semiconductor layer comprising organic semiconductor molecules with aromatic portions, the polycrystalline semiconductor layer being on the first region of the substrate. Integrated circuits comprising apparatus, and methods for making apparatus and integrated circuits.
摘要翻译：半导体装置，包括具有基板表面的基板; 第一介电层，其包含第一化合物的分子，所述第一化合物的分子具有第一末端和第二末端，所述第一末端共价键合到所述基材表面的第一区域，所述第二末端具有芳香区域; 以及包含具有芳香族部分的有机半导体分子的多晶半导体层，所述多晶半导体层位于所述基板的第一区域上。包括装置的集成电路以及用于制造装置和集成电路的方法。

76. 发明授权

US06969634B2 Semiconductor layers with roughness patterning 有权
标题翻译：具有粗糙图案化的半导体层
公开(公告)号：US06969634B2
公开(公告)日：2005-11-29
申请号：US10669780
申请日：2003-09-24
申请人： Zhenan Bao
发明人： Zhenan Bao
IPC分类号： H01L21/762 , H01L21/336 , H01L27/28 , H01L29/786 , H01L51/05 , H01L51/40 , H01L51/00
CPC分类号： H01L51/0541 , H01L27/28 , H01L51/0545
摘要： A method for making an IC on a surface of a planar substrate includes forming a continuous first layer on the surface of the substrate and pressing a surface of a stamp into the first layer to produce a pattern of non-intersecting smooth regions on the surface. A rough region of the surface of the first layer laterally borders and laterally surrounds each smooth region of the surface of the first layer. The pattern of smooth and rough regions on the surface of the first layer copies a pattern of smooth and rough areas on the surface of the stamp. The method also includes forming a continuous second layer on the patterned first layer. The first layer is one of a dielectric layer and an organic semiconductor layer, and the second layer is the other of a dielectric layer and an organic semiconductor layer.
摘要翻译：在平面基板的表面上制造IC的方法包括在基板的表面上形成连续的第一层，并将印模的表面按压到第一层中，以在表面上产生不相交的平滑区域的图案。第一层的表面的粗糙区横向地邻接并横向围绕第一层的表面的每个平滑区域。在第一层表面上的平滑和粗糙区域的图案在印模的表面上复制了平滑和粗糙区域的图案。该方法还包括在图案化的第一层上形成连续的第二层。第一层是电介质层和有机半导体层之一，第二层是电介质层和有机半导体层中的另一层。

77. 发明申请

US20050110006A1 Devices having patterned regions of polycrystalline organic semiconductors, and methods of making the same 有权
标题翻译：具有多晶有机半导体图案化区域的器件及其制造方法
公开(公告)号：US20050110006A1
公开(公告)日：2005-05-26
申请号：US10722613
申请日：2003-11-26
申请人： Joanna Aizenberg , Zhenan Bao , Alejandro Briseno , Yong-Jin Han , Hyunsik Moon
发明人： Joanna Aizenberg , Zhenan Bao , Alejandro Briseno , Yong-Jin Han , Hyunsik Moon
IPC分类号： H01L51/05 , H01L21/336 , H01L27/28 , H01L29/786 , H01L51/30 , H01L51/40 , H01L35/24 , H01L21/00
CPC分类号： H01L27/28 , B82Y10/00 , B82Y30/00 , H01L51/0004 , H01L51/0052 , H01L51/0545 , Y10T428/31511 , Y10T428/31663
摘要： Semiconductor apparatus comprising a substrate having a substrate surface; a first dielectric layer comprising molecules of a first compound, the molecules of the first compound having first ends and second ends, the first ends being covalently bonded to a first region of the substrate surface, the second ends having aromatic regions; and a polycrystalline semiconductor layer comprising organic semiconductor molecules with aromatic portions, the polycrystalline semiconductor layer being on the first region of the substrate. Integrated circuits comprising apparatus, and methods for making apparatus and integrated circuits.
摘要翻译：半导体装置，包括具有基板表面的基板; 第一介电层，其包含第一化合物的分子，所述第一化合物的分子具有第一末端和第二末端，所述第一末端共价键合到所述基材表面的第一区域，所述第二末端具有芳香区域; 以及包含具有芳香族部分的有机半导体分子的多晶半导体层，所述多晶半导体层位于所述基板的第一区域上。包括装置的集成电路以及用于制造装置和集成电路的方法。

78. 发明授权

US06891237B1 Organic semiconductor device having an active dielectric layer comprising silsesquioxanes 有权
公开(公告)号：US06891237B1
公开(公告)日：2005-05-10
申请号：US09603941
申请日：2000-06-27
申请人： Zhenan Bao , Valerie Jeanne Kuck , Mark Anthony Paczkowski
发明人： Zhenan Bao , Valerie Jeanne Kuck , Mark Anthony Paczkowski
IPC分类号： H01L21/312 , H01L29/76 , H01L51/00 , H01L51/05 , H01L51/30
CPC分类号： H01L51/0516 , H01L21/02137 , H01L21/02216 , H01L21/02282 , H01L21/02315 , H01L21/3124 , H01L51/0036 , H01L51/0052 , H01L51/0078 , H01L51/0545
摘要： An organic field effect transistor (FET) is described with an active dielectric layer comprising a low-temperature cured dielectric film of a liquid-deposited silsesquioxane precursor. The dielectric film comprises a silsesquioxane having a dielectric constant of greater than 2. The silsesquioxane dielectric film is advantageously prepared by curing oligomers having alkyl(methyl) and/or alkyl(methyl) pendant groups. The invention also embraces a process for making an organic FET comprising providing a substrate suitable for an organic FET; applying a liquid-phase solution of silsesquioxane precursors over the surface of the substrate; and curing the solution to form a silsesquioxane active dielectric layer. The organic FET thus produced has a high-dielectric, silsesquioxane film with a dielectric constant of greater than about 2, and advantageously, the substrate comprises an indium-tin oxide coated plastic substrate.

79. 发明申请

US20050093107A1 Thin dielectric layers on substrates, and methods of making the same 有权
标题翻译：基片上的薄介电层及其制造方法
公开(公告)号：US20050093107A1
公开(公告)日：2005-05-05
申请号：US10701185
申请日：2003-11-04
申请人： Zhenan Bao , Howard Katz
发明人： Zhenan Bao , Howard Katz
IPC分类号： H01L27/04 , H01L21/312 , H01L21/336 , H01L21/822 , H01L23/58 , H01L29/49 , H01L29/786
CPC分类号： H01L21/02203 , H01L21/02118 , H01L21/02126 , H01L21/02189 , H01L21/02211 , H01L21/3121 , H01L29/4908 , H01L29/78603 , H01L2924/0002 , H01L2924/00
摘要： Apparatus comprising: a first substrate; a dielectric layer comprising a first dielectric material on the first substrate, the dielectric layer having a dielectric layer thickness and being traversed by through holes passing from an interface with the first substrate, to an opposite side of the dielectric layer; and a second dielectric material at least partially blocking the through holes. Methods for making such apparatus.
摘要翻译：一种装置，包括：第一基板; 电介质层，其包括在所述第一基板上的第一电介质材料，所述电介质层具有电介质层厚度，并且穿过通过所述第一基板的界面的通孔到所述电介质层的相对侧; 以及至少部分地阻挡通孔的第二电介质材料。制造这种装置的方法。

80. 发明授权

US06582755B2 Polarizable photoactive and electroactive polymers and light emitting devices 失效
公开(公告)号：US06582755B2
公开(公告)日：2003-06-24
申请号：US10138319
申请日：2002-05-06
申请人： Zhenan Bao , Karl R. Amundson , Xiaochen Linda Chen
发明人： Zhenan Bao , Karl R. Amundson , Xiaochen Linda Chen
IPC分类号： B05D512
CPC分类号： C09K19/38 , H01L51/0038 , H01L51/5012 , Y10S428/917 , Y10S977/754 , Y10S977/788 , Y10S977/932
摘要： The invention relates to poly(phenylene vinylene) polymers substituted with dendritic sidechains to enhance main-chain separation in the solid state. The polymers are synthesized by the Heck polymerization and have a weight-average molecular weight of 20,000 to 60,000 Daltons. The polymers are self-ordering in the solid state and have thermotropic liquid crystalline phases. The polymers show enhanced photoconductivity, better charge transport capability and improved polarized light emission.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式