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    • 71. 发明授权
    • Transmitting and receiving circuit and semiconductor device including the same
    • 发射和接收电路和包括其的半导体器件
    • US08036604B2
    • 2011-10-11
    • US12003112
    • 2007-12-20
    • Masashi FujitaYutaka Shionoiri
    • Masashi FujitaYutaka Shionoiri
    • H04B1/38
    • H03F1/56H03F1/0205H03F3/245H03F2200/327
    • An object is to provide a circuit configuration with which the number of transistors can be reduced and power conversion efficiency can be prevented from being reduced, in a transmitting and receiving circuit. The transmitting and receiving circuit includes a voltage doubler rectifier circuit having N stages, each of which includes a capacitor, where N is a positive integer. The voltage doubler rectifier circuit having N stages is connected to a circuit having a modulation function. In the capacitor in any one of the N stages, one electrode of the one capacitor is connected to an input terminal of the transmitting and receiving circuit, and a node to which the other electrode of the one capacitor is connected is connected to a circuit having a demodulation function. Since the transmitting and receiving circuit can be formed of fewer transistors, it can be reduced in size. Since a reduction in power conversion efficiency can be prevented, a power supply potential can be efficiently generated.
    • 目的在于提供一种在发送和接收电路中可以减少晶体管数量并且可以防止功率转换效率降低的电路配置。 发送和接收电路包括具有N级的倍压整流电路,每个级包括电容器,其中N是正整数。 具有N级的倍压整流电路连接到具有调制功能的电路。 在N级中的任何一级的电容器中,一个电容器的一个电极连接到发送和接收电路的输入端子,并且连接一个电容器的另一个电极的节点连接到具有 解调功能。 由于发送和接收电路可以由更少的晶体管形成,所以可以减小其尺寸。 由于可以防止功率转换效率的降低,所以可以有效地产生电源电位。
    • 74. 发明授权
    • Semiconductor device and manufacturing method thereof
    • 半导体装置及其制造方法
    • US07750403B2
    • 2010-07-06
    • US11812534
    • 2007-06-19
    • Yutaka ShionoiriTakuro Ohmaru
    • Yutaka ShionoiriTakuro Ohmaru
    • H01L29/786
    • H01L27/11293H01L21/76816H01L27/105H01L27/112H01L27/11226H01L27/124H01L27/1255H01L29/41733
    • An individual identifier is easily provided in a semiconductor device capable of wireless communication. The semiconductor device includes a thin film transistor including a channel forming region, an island-like semiconductor film including a source region and a drain region, a gate insulating film, and a gate electrode; an interlayer insulating film; a plurality of contact holes formed in the interlayer insulating film which reach one of the source region and the drain region; and a single contact hole which reaches the other of the source region and the drain region, wherein a diameter of the single contact hole is larger than a diameter of each of the plurality of contact holes, and a sum of areas of bases of the plurality of contact holes is equal to an area of a base of the single contact hole.
    • 在能够进行无线通信的半导体装置中容易提供个体识别符。 半导体器件包括:包括沟道形成区域的薄膜晶体管,包括源极区域和漏极区域的岛状半导体膜,栅极绝缘膜和栅电极; 层间绝缘膜; 形成在所述层间绝缘膜中的多个接触孔,其到达所述源极区域和所述漏极区域中的一个; 以及到达源极区域和漏极区域中的另一个的单个接触孔,其中单个接触孔的直径大于多个接触孔中的每一个的直径,并且多个接地孔的基底的面积之和 接触孔的面积等于单个接触孔的基部的面积。