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    • 75. 发明授权
    • Video server
    • 视频服务器
    • US08478113B2
    • 2013-07-02
    • US13016516
    • 2011-01-28
    • Toshiki MoriShuichi YamaguchiToshio Suzuki
    • Toshiki MoriShuichi YamaguchiToshio Suzuki
    • H04N7/56H04N9/80G06F15/16G06F15/173
    • H04N21/2181H04N21/23103H04N21/2393
    • According to one embodiment, a video server includes a plurality of processors and a log data integration unit. Each of the plurality of processors includes a generation module, a storage module, and a transmission module. The generation module generates the log data including at least an event occurrence time. The storage module stores the log data. The transmission module transmits the log data stored in the storage module to the log data integration unit via the common bus. The log data integration unit includes a reception module and an integration module. The reception module receives the log data from the plurality of processors via the common bus. The integration module integrates the received log data in an occurrence time order.
    • 根据一个实施例,视频服务器包括多个处理器和日志数据集成单元。 多个处理器中的每一个包括生成模块,存储模块和传输模块。 生成模块生成至少包括事件发生时间的日志数据。 存储模块存储日志数据。 传输模块通过公共总线将存储在存储模块中的日志数据发送到日志数据集成单元。 日志数据集成单元包括接收模块和集成模块。 接收模块经由公共总线从多个处理器接收日志数据。 集成模块将接收到的日志数据以发生时间顺序进行集成。
    • 76. 发明授权
    • Level shift circuit
    • 电平移位电路
    • US07449918B2
    • 2008-11-11
    • US11642965
    • 2006-12-21
    • Seiji YamahiraToshiki Mori
    • Seiji YamahiraToshiki Mori
    • H03K19/0175
    • H03K19/018528
    • To provide a single-ended-output-type level shift circuit capable of improving an increase in a delay time according to a voltage level shift operation at low voltage and suppressing an increase in an area occupied by the circuit, first and second inverters 300 and 200 of a CMOS type in which a gate of each MOS transistor is individually driven are provided and the first inverter 300 is used as a level converting unit. A voltage level of a first control signal CS1 output from an output node no1 of the first inverter 300 is forcibly dropped down by a voltage dropping circuit CONT1 so as to accelerate the operation of the second inverter 200. As a result, the inversion of the level of an output signal of the first inverter 300 is accelerated. Further, the balance between current capabilities of the individual transistors is optimized and, in particular, the sizes of the transistors constituting the second inverter 200 are reduced so as to suppress an increase in a circuit area.
    • 为了提供一种单端输出型电平移位电路,能够根据低电压电平移位操作改善延迟时间的增加,并抑制电路占用面积的增加,第一和第二逆变器300和 设置分别驱动每个MOS晶体管的栅极的CMOS型的200,并且将第一反相器300用作电平转换单元。 从第一反相器300的输出节点No1输出的第一控制信号CS1的电压电平被降压电路CONT 1强制降低,以加速第二反相器200的运行。 结果,第一逆变器300的输出信号的电平的反转加速。 此外,各个晶体管的电流能力之间的平衡被优化,特别地,构成第二反相器200的晶体管的尺寸减小,以抑制电路面积的增加。
    • 79. 发明授权
    • Modified olefin copolymer
    • 改性烯烃共聚物
    • US07160950B2
    • 2007-01-09
    • US10485992
    • 2002-08-06
    • Toshiki MoriNobuo Oi
    • Toshiki MoriNobuo Oi
    • C08F132/08C08F112/04C08F255/08
    • B32B15/08B32B7/12B32B27/32C08F255/00C08F255/02C09J151/06
    • A modified olefin-based copolymer produced by graft-polymerizing an alkenyl aromatic hydrocarbon and/or an unsaturated carboxylic acid or derivative thereof to an olefin-based copolymer containing repeating units derived from a linear α-olefin and/or ethylene copolymer of ethylene and repeating units derived from a vinyl compound (I) or (II) described below, and an adhesive containing the product as an effective ingredient, in which an adhesiveness to an adherend such as olefin resins (e.g. polyethylene, polypropylene) is further improved, are provided.Vinyl compound (I): a vinyl compound represented by the general formula CH2═CH—R, wherein steric parameters Es and B1 of the substituent R are respectively −1.64 or less and 1.53 or more.Vinyl compound (II): a vinyl compound represented by the general formula CH2═CH—R′, wherein a substituent R′ is a secondary or tertiary alkyl group.
    • 通过将烯基芳族烃和/或不饱和羧酸或其衍生物接枝聚合到烯烃类共聚物上而制备的改性烯烃基共聚物,所述共聚物含有衍生自乙烯的直链α-烯烃和/或乙烯共聚物的重复单元和重复 提供衍生自下述乙烯基化合物(I)或(II)的单元和含有作为有效成分的产品的粘合剂,其中进一步改善与诸如烯烃树脂(例如聚乙烯,聚丙烯)的被粘物的粘附性 。 乙烯基化合物(I):由通式CH 2 -CH-R表示的乙烯基化合物,其中取代基R的空间参数Es和B1分别为-1.64以下且1.53以上。 乙烯基化合物(II):由通式CH 2 -CH-R'表示的乙烯基化合物,其中取代基R'为仲或叔烷基。