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71. 发明申请

US20080011714A1 Photoresist stripping solution and a method of stripping photoresists using the same 有权
标题翻译：光阻剥离溶液和使用其剥离光致抗蚀剂的方法
公开(公告)号：US20080011714A1
公开(公告)日：2008-01-17
申请号：US11898174
申请日：2007-09-10
申请人： Shigeru Yokoi , Kazumasa Wakiya
发明人： Shigeru Yokoi , Kazumasa Wakiya
IPC分类号： B44C1/22 , C09K13/06
CPC分类号： G03F7/425 , G03F7/423 , G03F7/426 , H01L21/02071 , H01L21/31116
摘要： A photoresist stripping solution which comprises (a) a salt of hydrofluoric acid with a base free from metal ions, (b) a water-soluble organic solvent, (c) a mercapto group containing corrosion inhibitor, and (d) water, and a method of stripping photoresists with the use of the same are disclosed. In case of using ammonium fluoride as component (a), the photoresist stripping solution may further contain (e) a salt of hydrofluoric acid with a quaternary ammonium hydroxide, such as tetramethylammonium hydroxide, tetrapropylammonium hydroxide, etc., and/or an alkanolamine. The photoresist stripping solution of the present invention has an excellent effect of protecting both Al— and Cu-based metal wiring conductors from corrosion, of efficiently stripping photoresist films and post-ashing residues, and is free from the precipitation of the corrosion inhibitor.
摘要翻译：一种光致抗蚀剂剥离溶液，其包含（a）不含金属离子的碱的氢氟酸盐，（b）水溶性有机溶剂，（c）含巯基的缓蚀剂，和（d）水，和公开了使用其剥离光致抗蚀剂的方法。在使用氟化铵作为组分（a）的情况下，光致抗蚀剂剥离溶液还可以含有（e）氢氟酸盐与季铵氢氧化物如四甲基氢氧化铵，四丙基氢氧化铵等和/或链烷醇胺。本发明的光致抗蚀剂剥离溶液具有优异的保护Al和Cu基金属布线导体免受腐蚀，有效地剥离光致抗蚀剂膜和后灰化残留物的作用，并且没有腐蚀抑制剂的沉淀。

72. 发明申请

US20070243494A1 Photoresist stripping solution and a method of stripping photoresists using the same 审中-公开
标题翻译：光阻剥离溶液和使用其剥离光致抗蚀剂的方法
公开(公告)号：US20070243494A1
公开(公告)日：2007-10-18
申请号：US11812160
申请日：2007-06-15
申请人： Shigeru Yokoi , Kazumasa Wakiya
发明人： Shigeru Yokoi , Kazumasa Wakiya
IPC分类号： G03F7/32
CPC分类号： G03F7/422 , C11D7/265 , C11D7/3218 , C11D7/34 , C11D11/0047 , G03F7/425
摘要： A photoresist stripping solution comprising (a) a carboxyl group-containing acidic compound, (b) at least one basic compound (for example, monoethanolamine, tetraalkylammonium) selected from among alkanolamines and specific quaternary ammonium hydroxides, (c) a sulfur-containing corrosion inhibitor and (d) water, and having a pH value of 3.5-5.5; and a method of stripping photoresists using the same are disclosed. The present invention provides a photoresist stripping solution which is excellent in the effect of protecting metal wirings (in particular, Cu wirings) from corrosion, never damages interlevel films, such as low dielectric layers or organic SOG layers, and shows excellent strippability of photoresist films and post-ashing residues.
摘要翻译：一种光致抗蚀剂剥离溶液，其包含（a）含羧基的酸性化合物，（b）至少一种选自烷醇胺和特定季铵氢氧化物的碱性化合物（例如单乙醇胺，四烷基铵），（c）含硫腐蚀抑制剂和（d）水，pH值为3.5-5.5; 并公开了使用其剥离光致抗蚀剂的方法。本发明提供一种光刻胶剥离溶液，其保护金属布线（特别是铜布线）不受腐蚀的影响，不会损害诸如低电介质层或有机SOG层的层间膜，并且显示出优异的光致抗蚀剂剥离性和后灰化残留物。

73. 发明申请

US20050187118A1 Cleaning solution, method for cleaning semiconductor substrate using the same, and method for forming metal wiring 审中-公开
标题翻译：清洗液，使用其的半导体基板的清洗方法以及金属配线的形成方法
公开(公告)号：US20050187118A1
公开(公告)日：2005-08-25
申请号：US11034864
申请日：2005-01-14
申请人： Takayuki Haraguchi , Shigeru Yokoi , Kazumasa Wakiya
发明人： Takayuki Haraguchi , Shigeru Yokoi , Kazumasa Wakiya
IPC分类号： H01L21/3213 , C11D7/10 , C11D7/26 , C11D7/50 , C11D11/00 , C23G1/12 , C23G1/22 , G03F7/42 , H01L21/304 , C23G1/00 , C11D1/00
CPC分类号： C11D7/10 , C11D7/264 , C11D7/5004 , C11D11/0047 , C23G1/125 , C23G1/22 , G03F7/423 , G03F7/426
摘要： The stripping-cleaning solution can advantageously strip a deposit generated on the top surface of a wiring without excessively etching the metal layer which constitutes the sidewall of the metal wiring pattern and the top surface of the wiring. The stripping-cleaning solution comprises at least a fluorine compound, a water-soluble organic solvent, water, and a bidentate ligand in an amount of 0.1 to 20% by mass based on the total mass of the tripping-cleaning solution. Alternatively, the stripping-cleaning solution comprises at least a basic aqueous solution, at least one selected from an organic compound having a carboxyl group and an anhydride thereof, water, and a bidentate ligand in an amount of 0.5 to 10% by mass based on the total mass of the stripping-cleaning solution.
摘要翻译：剥离清洗液可以有利地剥离在配线的顶面上产生的沉积物，而不会过度地蚀刻构成金属布线图案的侧壁的金属层和布线的顶面。剥离清洗液至少含有相对于脱扣清洗液的总质量为0.1〜20质量％的氟化合物，水溶性有机溶剂，水和二齿配位体。或者，汽提清洗液至少含有碱性水溶液，选自有羧基羧酸的有机化合物及其酸酐中的至少一种，水和二齿配位体，其含量为0.5〜10质量％汽提清洁溶液的总质量。

74. 发明申请

US20050176259A1 Method for removing photoresist 审中-公开
标题翻译：去除光刻胶的方法
公开(公告)号：US20050176259A1
公开(公告)日：2005-08-11
申请号：US10512586
申请日：2003-04-25
申请人： Shigeru Yokoi , Kazumasa Wakiya , Takayuki Haraguchi
发明人： Shigeru Yokoi , Kazumasa Wakiya , Takayuki Haraguchi
IPC分类号： G03F7/42 , H01L21/027 , H01L21/304 , C23F1/00 , B44C1/22 , C03C15/00 , C03C25/68
CPC分类号： G03F7/425
摘要： Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O2 plasma ashing treatment in micropatterning of a substrate having at least Cu wiring and a low-dielectric layer thereon, as in a dual damascene forming process, and, in addition, the method of the invention does not have any negative influence on the dielectric constant of the low-dielectric layer, and ensures an excellent anti-corrosivity.
摘要翻译：公开了一种剥离光致抗蚀剂的方法，包括：（I）在衬底上提供光致抗蚀剂图案，其中衬底至少具有铜（Cu）布线和其上的低电介质层，并且通过使用选择性地蚀刻低电介质层光刻胶图案作为掩模; （II）在步骤（I）之后与臭氧水和/或过氧化氢水溶液接触; 和（III）在步骤（II）之后使基底与至少含有氢氧化季铵的光致抗蚀剂剥离溶液接触。本发明提供了一种剥离光致抗蚀剂的方法，其即使在不包括O 2等离子体灰浆化处理的工艺中，也能够有效地剥离光致抗蚀剂膜和蚀刻残留物，在至少具有至少 Cu布线和其中的低介电层，如在双镶嵌形成工艺中，此外，本发明的方法对低电介质层的介电常数没有任何负面影响，并且确保了优异的抗 - 腐蚀性

75. 发明授权

US06689535B2 Anti-reflective coating composition, multilayer photoresist material using the same, and method for forming pattern 有权
标题翻译：抗反射涂料组合物，使用其的多层光刻胶材料，以及形成图案的方法
公开(公告)号：US06689535B2
公开(公告)日：2004-02-10
申请号：US09986673
申请日：2001-11-09
申请人： Etsuko Iguchi , Takeshi Tanaka , Kazumasa Wakiya
发明人： Etsuko Iguchi , Takeshi Tanaka , Kazumasa Wakiya
IPC分类号： G03F7003
CPC分类号： G03F7/091
摘要： Disclosed is an anti-reflective coating composition for forming an anti-reflective coating as an undercoating layer is provided, comprising a crosslinking agent, which is at least one compound selected from nitrogen-containing compounds having an amino group(s) and/or an imino group(s) at least two hydrogen atoms of which are substituted by a hydroxyalkyl group(s) and/or an alkoxyalkyl group(s), and an acidic compound, wherein the crosslinking agent is such that the proportion of its low-molecular-weight component not larger than a trimer is adjusted to be 15 wt % or less; a multilayer photoresist material using the composition; and a method for forming a pattern. According to the present invention, even in the formation of a hyperfine pattern, it is possible to provide a photoresist pattern having a rectangular cross-sectional profile in relation to the substrate without causing any undesirable phenomena, such as footing, undercutting, etc. at is bottom.
摘要翻译：公开了一种抗反射涂层组合物，其用于形成作为底涂层的抗反射涂层，其包含交联剂，其为至少一种选自具有氨基的含氮化合物和/或其中至少两个氢原子被羟基烷基和/或烷氧基烷基取代的亚氨基，和酸性化合物，其中交联剂使得其低分子量不大于三聚体的重量成分调整为15重量％以下; 使用该组合物的多层光致抗蚀剂材料; 以及形成图案的方法。根据本发明，即使形成超精细图案，也可以提供相对于基板具有矩形截面轮廓的光致抗蚀剂图案，而不会引起任何不期望的现象，例如基底，底切等是底部

76. 发明授权

US06599682B2 Method for forming a finely patterned photoresist layer 失效
标题翻译：形成精细图案化光刻胶层的方法
公开(公告)号：US06599682B2
公开(公告)日：2003-07-29
申请号：US09839200
申请日：2001-04-23
申请人： Etsuko Iguchi , Kazumasa Wakiya
发明人： Etsuko Iguchi , Kazumasa Wakiya
IPC分类号： G03F700
CPC分类号： G03F7/091 , Y10S430/151
摘要： The invention discloses an improvement in the photolithographic patterning method of a photoresist layer formed on a substrate surface with intervention of an anti-reflection coating film, in which the refractive index and the light-absorption coefficient of the anti-reflection coating film are controlled in such a way that, in a graph prepared by plotting the thickness of the anti-reflection coating film taken as the abscissa values and the reflectivity of the light for patterning exposure at the interface between the anti-reflection coating film and the photoresist layer thereon taken as the ordinate values, the range of the variation in the film thickness corresponding to an increment of 0.01 in the reflectivity in the vicinity of the minimum point on the thickness vs. reflectivity curve does not exceed ±0.01 &mgr;m.
摘要翻译：本发明公开了在防反射涂膜的介入下形成在基板表面上的光致抗蚀剂层的光刻图案化方法的改进，其中防反射涂膜的折射率和光吸收系数被控制在这样一种方式，在通过绘制作为横坐标值的抗反射涂膜的厚度和用于图案曝光的光的反射率制成的图中，其中所述抗反射涂膜和其上的光致抗蚀剂层之间的界面被取下作为纵坐标值，厚度与反射率曲线之间的最小点附近的反射率中对应于0.01的增量的膜厚度的变化范围不超过±0.01μm。

77. 发明授权

US06416930B2 Composition for lithographic anti-reflection coating, and resist laminate using the same 失效
标题翻译：用于光刻抗反射涂层的组合物和使用其的抗蚀层压体
公开(公告)号：US06416930B2
公开(公告)日：2002-07-09
申请号：US09799554
申请日：2001-03-07
申请人： Kazumasa Wakiya , Naotaka Kubota , Shigeru Yokoi , Masakazu Kobayashi
发明人： Kazumasa Wakiya , Naotaka Kubota , Shigeru Yokoi , Masakazu Kobayashi
IPC分类号： G03F711
CPC分类号： G03F7/091
摘要： A composition includes a copolymer of vinylimidazole with a water-soluble film-forming monomer other than vinylimidazole, and a fluorine-containing surfactant. A resist laminate is obtained by forming an anti-reflection coating on the surface of a photoresist film, which anti-refection coating is composed of a coating solution obtained by dissolving the composition in water. The composition for lithographic anti-reflection coating has balanced compatibility with conventional photoresist compositions. By using the composition, a semiconductor device can be efficiently produced without the clogging of waste fluids in a waste fluid pipe, even when the application of the photoresist composition and the formation of the anti-reflection coating are sequentially performed using one coater. This composition is also advantageous for saving space in a clean room.
摘要翻译：组合物包括乙烯基咪唑与乙烯基咪唑以外的水溶性成膜单体的共聚物和含氟表面活性剂。通过在光致抗蚀剂膜的表面上形成抗反射涂层来获得抗蚀层叠体，该抗反射涂层由通过将该组合物溶解在水中得到的涂布溶液组成。用于光刻抗反射涂层的组合物与常规光致抗蚀剂组合物具有平衡的相容性。通过使用该组合物，即使当使用一个涂布机顺序地进行光致抗蚀剂组合物的施加和防反射涂层的形成时，也可以有效地制造半导体装置而不会在废流体管道中堵塞废流体。这种组合物也有利于节省洁净室中的空间。

78. 发明授权

US06225034B1 Photoresist stripping liquid compositions and a method of stripping photoresists using the same 有权
公开(公告)号：US06225034B1
公开(公告)日：2001-05-01
申请号：US09173005
申请日：1998-10-15
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
IPC分类号： G03F742
CPC分类号： G03F7/425
摘要： The present invention relates to photoresist stripping liquid compositions comprising (a) 2-30 wt % of a hydroxylamine, (b) 2-35 wt % of water, (c) 25-40 wt % of at least one member selected from monoethanolamine and diethanolamine, (d) 20-32 wt % of dimethyl sulfoxide and (e) 2-20 wt % of an aromatic hydroxy compound and a method of stripping photoresists with the use of the same. The present invention provides photoresist stripping liquid compositions which are, even at higher treating temperatures, excellent in the capabilities of both stripping photoresist films and modified films and effective in prevention of the corrosion that would otherwise occur in substrates overlaid with Al or Al alloy layers or Ti layers, and a method for stripping photoresists by using the same.

79. 发明授权

US06218087B1 Photoresist stripping liquid composition and a method of stripping photoresists using the same 有权
标题翻译：光刻胶剥离液组合物和使用其剥离光致抗蚀剂的方法
公开(公告)号：US06218087B1
公开(公告)日：2001-04-17
申请号：US09588557
申请日：2000-06-07
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi
IPC分类号： G03F732
CPC分类号： G03F7/422 , G03F7/425 , G03F7/426
摘要： There is disclosed a photoresist stripping liquid composition of which the CIE 1976 L*a*b* color difference (&Dgr;E*ab) specified in JIS (=Japanese Industrial Standard) Z 8730 is 30-180 (as referenced to pure water). The composition is excellent not only in stripping photoresist layers and the deposition (residue) that occurs after the etching or ashing step but also in protecting substrates from corrosion even if they have metallic, inorganic or like films formed on them. An improved method of stripping photoresists using the composition is also disclosed.
摘要翻译：公开了JIS（日本工业标准）Z 8730中规定的CIE 1976 L * a * b *色差（DELTAE * ab）为30-180（参照纯水）的光致抗蚀剂剥离液组合物。该组合物不仅在剥离光致抗蚀剂层以及在蚀刻或灰化步骤之后发生的沉积（残余物）而且在保护基底免受腐蚀的同时也是优异的，即使它们具有形成在其上的金属，无机或类似的膜。还公开了使用该组合物剥离光致抗蚀剂的改进方法。

80. 发明授权

US6068000A Substrate treatment method 失效
标题翻译：底物处理方法
公开(公告)号：US6068000A
公开(公告)日：2000-05-30
申请号：US891137
申请日：1997-07-10
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
IPC分类号： G03F7/32 , G03F7/42 , H01L21/02 , H01L21/027 , H01L21/304 , H01L21/3213 , B08B6/00 , H01L21/302
CPC分类号： H01L21/02071 , G03F7/42 , G03F7/423 , G03F7/425
摘要： The present invention provides a substrate treatment method to be performed after the steps of forming a desired resist pattern on a substrate and etching thereof, wherein said method comprises steps of: (I) removing the resist pattern on the substrate using a remover solution principally containing a salt derived from hydrofluoric acid and a metal-free base; (II) rinsing said substrate with a lithographic rinsing solution containing a water-soluble organic solvent and water; and (III) washing said substrate with water. According to the present invention, metallic films on the substrate are not corroded in the substrate treatment method, and the method can be performed at a low cost and with a reduced volume of labor for disposal of waste solution used for washing the substrate.
摘要翻译：本发明提供了一种在基板上形成期望的抗蚀剂图案和蚀刻步骤之后执行的基板处理方法，其中所述方法包括以下步骤：（I）使用主要包含衍生自氢氟酸和无金属碱的盐; （II）用含有水溶性有机溶剂和水的平版印刷冲洗溶液冲洗所述基材; 和（III）用水洗涤所述基材。根据本发明，在基板处理方法中，基板上的金属膜不会被腐蚀，并且可以以低成本执行该方法，并且减少了用于清洗基板的废溶液处理的劳动量。

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